WO2022259535A1 - Light receiving device - Google Patents
Light receiving device Download PDFInfo
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- WO2022259535A1 WO2022259535A1 PCT/JP2021/022358 JP2021022358W WO2022259535A1 WO 2022259535 A1 WO2022259535 A1 WO 2022259535A1 JP 2021022358 W JP2021022358 W JP 2021022358W WO 2022259535 A1 WO2022259535 A1 WO 2022259535A1
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- WIPO (PCT)
- Prior art keywords
- light
- light receiving
- condenser lens
- semiconductor
- semiconductor substrate
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000005304 optical glass Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
Definitions
- the present invention relates to a light-receiving device installed in a measuring instrument such as a spectroscopic analyzer, and more particularly to a light-receiving device that receives infrared light.
- measuring instruments such as spectroscopic analysis are equipped with a light receiving device for detecting the absorption spectrum of a sample in the infrared region, for example.
- a photodetector is equipped with a semiconductor photodetector having a bandgap energy corresponding to the wavelength of light to be received, and is required to detect weak optical signals for highly accurate analysis.
- the bandgap energy is small, noise is likely to occur due to factors such as heat, and when a weak optical signal is photoelectrically converted, it cannot be distinguished from noise. Therefore, it is necessary to suppress the noise level.
- the dark current tends to increase as the bandgap energy decreases, and increases as the area of the light receiving portion increases at the same bandgap energy. Therefore, increasing the area of the light-receiving portion to increase the amount of light received and suppressing the dark current are in conflict with each other, and it is not easy to achieve both.
- Patent Document 1 there is known a technique of increasing the amount of received light by condensing light onto a light receiving portion having a small area using a condenser lens integrally formed with a semiconductor light receiving element.
- a light receiving unit is also known in which a condensing lens and a light receiving element are fixed to a shield member, and light is condensed on a light receiving portion of the light receiving element by means of the condensing lens.
- the convex lens surface 50a and the light receiving portion 51 is too small, most of the incident light L condensed by the condensing lens 50 cannot reach the light receiving portion 51, and the increase in the amount of received light is not large.
- Patent Document 2 since the condenser lens and the semiconductor light receiving element are separate members, the distance between them can be increased. However, it is not easy to assemble the light-receiving device because it is necessary to align the semiconductor light-receiving element, the case, and the light-collecting lens in order to focus the light on the light-receiving portion. In addition, in order to prevent cracking or chipping of the condenser lens, which has a thinner peripheral portion than the central portion, and to facilitate handling during assembly, it is necessary to form the condenser lens to some extent thick. Therefore, it becomes difficult to form a compact light receiving device, and there is a possibility that a sufficient amount of received light cannot be secured depending on the transmittance of the condenser lens.
- An object of the present invention is to provide a light receiving device that can achieve both an increase in the amount of light received and a reduction in size.
- a light-receiving device having a first condenser lens and a semiconductor light-receiving element, wherein incident light condensed by the first condenser lens is incident on the semiconductor light-receiving element.
- the first condensing lens is formed on a first surface side of a first semiconductor substrate through which incident light is transmitted, and corresponds to the first condensing lens of the first semiconductor substrate.
- a housing portion is formed by recessing the first semiconductor substrate from a second surface facing the surface toward the first surface side, and the semiconductor light receiving element is formed in the second semiconductor substrate and extends into the housing portion. Characterized by containment.
- the light receiving device includes the first condensing lens formed on the first semiconductor substrate, and the accommodating portion formed by recessing the first semiconductor substrate so as to correspond to the first condensing lens. and a semiconductor light receiving element.
- the semiconductor light receiving element is formed on the second semiconductor substrate and accommodated in the accommodation portion of the first semiconductor substrate, and the light condensed by the first condenser lens enters the semiconductor light receiving element. Since the first condenser lens is separate from the semiconductor light receiving element, by increasing the distance between the first condenser lens and the semiconductor light receiving element, the light receiving diameter that can be incident on the semiconductor light receiving element in the first condenser lens is increased. can be done.
- the first condenser lens formed on the first semiconductor substrate has a higher refractive index than a general condenser lens made of optical glass or optical plastic, and has an improved light-condensing function. Therefore, it is possible to reduce the distance between the first condenser lens and the semiconductor light receiving element while maintaining the light receiving diameter of the first condenser lens, thereby downsizing the light receiving device. Further, since the first condenser lens is integrally formed on the first semiconductor substrate together with the accommodating portion, it is easy to align the first condenser lens and the semiconductor light receiving element accommodated in the accommodating portion. In addition, since the first condenser lens is thinly formed by forming the accommodating portion, the amount of incident light transmitted through the first condenser lens can be increased, contributing to an increase in the amount of received light. do.
- a light-receiving device comprising a light-receiving portion formed on the main surface side of the second semiconductor substrate and a second condenser lens formed on the back surface side. and is accommodated in the accommodating portion with the back side facing the first condenser lens, and the incident light condensed by the first condenser lens is condensed by the second condenser lens It is characterized in that it is configured to be illuminated and incident on the light receiving section. According to the above configuration, the incident light condensed by the first condensing lens is condensed by the second condensing lens and enters the light receiving section. 1. By reducing the distance between the condenser lens and the semiconductor light receiving element, the size of the light receiving device can be reduced.
- a light receiving device according to the first or second aspect of the invention, wherein the incident light is infrared light and the first semiconductor substrate is a silicon substrate.
- the first semiconductor substrate on which the first condenser lens is formed is a silicon substrate having a high transmittance and a high refractive index with respect to infrared light, it is advantageous for miniaturization of the light receiving device. Since high-precision processing is possible, a high-performance light-receiving device with an increased light-receiving amount can be formed.
- a light-receiving device according to any one of the first to third aspects of the invention, further comprising a light shielding structure for preventing stray light from entering the first condenser lens.
- the light receiving device of the present invention it is possible to achieve both an increase in the amount of received light and a reduction in size.
- FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1 for explaining incident light;
- FIG. 3 is a cross-sectional view corresponding to FIG. 2 showing a modification of the light receiving device of FIG. 1;
- FIG. 10 is an explanatory diagram of a process of forming a resist mask for the lens holder; It is explanatory drawing of the lens etching process of a lens holder. It is explanatory drawing of the accommodating part etching process of a lens holder. It is explanatory drawing of the completed lens holder.
- FIG. 4 is an explanatory diagram of incident light by a condenser lens integrally formed on a light receiving element;
- the light receiving device 1 has a semiconductor light receiving element 2 for photoelectric conversion, a substrate 4 having a pair of electrodes 3 a and 3 b, and a lens holder 5 fixed to the substrate 4 .
- the material of the lens holder 5 is the first semiconductor substrate 10 through which the incident light can pass, and the lens holder 5 is formed with the first condensing lens 6 and the accommodating portion 7 . Collimated light is incident as incident light in the direction of the optical axis P of the first condenser lens 6 , and the light condensed by the first condenser lens 6 enters the semiconductor light receiving element 2 housed in the housing portion 7 .
- the first condenser lens 6 has a convex surface on the first surface 10a side corresponding to the front side of a silicon (Si) substrate as the first semiconductor substrate 10, and corresponds to the back side facing the first surface 10a. It is a spherical plano-convex lens in which the surface on the second surface 10b side is formed flat.
- the first semiconductor substrate 10 transmits infrared light with a wavelength of 1.2 ⁇ m or more, for example, and has a refractive index of 3.2 or more, which is larger than the refractive index (about 1.5 to 1.7) of general optical glass and optical plastic. has a refractive index of
- the accommodating portion 7 for accommodating the semiconductor light receiving element 2 is formed by recessing the first semiconductor substrate 10 from the second surface 10b toward the first surface 10a so as to correspond to the first condenser lens 6. It is The first surface 10a and the second surface 10b are (110) surfaces of the first semiconductor substrate 10, respectively. The flat surface of the first condenser lens 6 facing the accommodating portion 7 is the (110) surface of the first semiconductor substrate 10 . Two side surfaces 10c and 10d facing the accommodating portion 7 are the (111) planes of the first semiconductor substrate 10 and are parallel to each other. These two side surfaces 10c and 10d are perpendicular to the (110) plane of the first semiconductor substrate 10, respectively.
- the semiconductor light-receiving element 2 formed on the second semiconductor substrate 20 has, for example, a light-receiving portion 20a (photodiode) with a diameter F of 0.1 mm. are connected to the corresponding electrodes 3a and 3b via the . Incident light incident on the light receiving portion 20a of the semiconductor light receiving element 2 is converted into an electric signal (photocurrent) and output to the outside via a pair of electrodes 3a and 3b.
- the lens holder 5 and the semiconductor light receiving element 2 are aligned so that the optical axis P of the first condenser lens 6 passes through the center of the light receiving section 20a. Further, the thickness of the lens holder 5 is set to, for example, 1.15 mm, the curvature radius CR1 of the first condenser lens 6 is 1.8 mm, the diameter A is 1.2 mm, and the thickness B at the optical axis P is 0.2 mm. is set to
- a ray tracing simulation result when collimated light is incident on the first condenser lens 6 is indicated by a plurality of rays L1.
- the distance D between the first condenser lens 6 and the light receiving section 20a is set so that all incident light with a beam diameter C of 1 mm can enter the light receiving section 20a.
- the distance D between the flat surface of the first condenser lens 6 facing the accommodating portion 7 and the light receiving portion 20a of the semiconductor light receiving element 2 is set to 0.8 mm
- the thickness E of the semiconductor light receiving element 2 is set to 0.15 mm.
- the semiconductor light-receiving element 2 is arranged with the side on which the light-receiving part 20a is formed facing the first condenser lens 6, but since the incident light passes through the second semiconductor substrate 20, It is also possible to adjust the distance D so that the side on which the portion 20a is formed faces the substrate 4 side.
- the semiconductor light-receiving element 2 is formed on, for example, an indium phosphide (InP) substrate as a second semiconductor substrate 20, and has a light-receiving portion 20a having a bandgap energy of about 0.6 eV, which includes, for example, an InGaAs layer as a light absorption layer.
- the semiconductor light receiving element 2 may include a light receiving portion 20a made of, for example, InAs or InSb, which has a smaller bandgap energy than InGaAs, in order to receive incident light with a longer wavelength.
- the distance D can be made larger than the thickness E of the semiconductor light receiving element 2 (thickness of the second semiconductor substrate 20). Therefore, even incident light with a beam diameter C about ten times larger than the diameter F of the light receiving portion 20a can be condensed by the first condenser lens 6 and made incident on the light receiving portion 20a. Since the light-receiving area of the first condenser lens 6 is about 100 times the area of the light-receiving part 20a, the dark current is suppressed by the light-receiving part 20a, which has a small area, while the light is received by the first condenser lens 6, which has a large light-receiving area. The amount of light received can be increased by concentrating the light on the light receiving portion 20a.
- a light receiving device 1A having a semiconductor light receiving element 2A with a second condenser lens 20b can be formed.
- the semiconductor light receiving element 2A includes a light receiving portion 20a formed on the principal surface 20c side of the second semiconductor substrate 20, and a second condenser lens 20b formed on the rear surface 20d facing the principal surface 20c. 1 is housed in the housing portion 7 in a posture directed toward the condenser lens 6 side. Then, the incident light condensed by the first condensing lens 6 as indicated by the light ray L2 is condensed by the second condensing lens 20b and enters the light receiving section 20a.
- the semiconductor light receiving element 2A is connected to the corresponding electrodes 3a and 3b via, for example, conductive paste (not shown) and wiring (not shown) formed on the substrate 4. Incident light incident on the light receiving portion 20a of the semiconductor light receiving element 2A is converted into an electric signal (photocurrent) and output to the outside via a pair of electrodes 3a and 3b.
- the size of the first condenser lens 6 and the diameter F of the light receiving portion 20a of the light receiving device 1A are the same as those of the light receiving device 1.
- the thickness E of the semiconductor light receiving element 2A (second semiconductor substrate 20) is set to 0.19 mm, and the flat surface of the first condenser lens 6 facing the accommodating portion 7 and the semiconductor
- a distance D between the light receiving elements 2A is set to 0.6 mm.
- a radius of curvature CR2 and a diameter G of the second condenser lens 20b are set to, for example, 0.15 mm and 0.2 mm, respectively. Since the condensing action of the second condenser lens 20b is also used, the thickness of the lens holder 5 having the first condenser lens 6 can be reduced, and the light receiving device 1A can be made smaller than the light receiving device 1.
- a method for forming the lens holder 5 will be described.
- a photoresist film 31 is formed on the first surface 10a of the first semiconductor substrate 10, for example, in a circular shape in plan view.
- the photoresist film 31 is melted by heating to, for example, about 150° C., and the surface tension of the photoresist film 31 is used to transform it into a plano-convex lens shape as shown in FIG. 5 to form a resist mask 31A. do.
- the resist mask 31A is formed on the first surface 10a side of the first semiconductor substrate 10 by supplying an etching gas as indicated by a plurality of arrows by a reactive ion etching (RIE) method. Etch until it disappears.
- RIE reactive ion etching
- the housing portion etching step the first surface 10a side on which the convex spherical surface of the first condenser lens 6 is formed is covered with the protective film 32, and the housing portion 7 is formed on the second surface 10b side.
- An etching mask 33 for formation is formed, and anisotropic etching is performed from the second surface 10b side.
- the formation direction of the etching mask 33 is appropriately selected, and etching is performed using an alkaline etchant such as potassium hydroxide (KOH).
- the (111) plane of the first semiconductor substrate 10 which is perpendicular to the (110) plane of the first semiconductor substrate 10 and has a slow etching rate, is exposed. Then, the etching progresses to form a groove-like accommodation portion 7 .
- the lens holder 5 having the first condenser lens 6 and the housing portion 7 is obtained as shown in FIG. 4 to 8, the individual piece-shaped first semiconductor substrate 10 is used for the explanation, but the wafer-shaped first semiconductor substrate 10 is provided with a plurality of first condenser lenses 6 and a plurality of accommodating portions 7, respectively. After being collectively formed, it can be separated into individual pieces. Further, as shown in FIG. 9, for example, a light receiving device 1B is provided with a lens holder 5A having a single eave-like side wall having a side surface 10d facing the housing portion 7A, and the lens holder 5A and, for example, a semiconductor light receiving element 2A. can also be formed.
- a lens holder 5B can be formed having a portion 7B.
- the accommodating portion 7B surrounded by the inclined side surfaces 10e to 10h.
- the semiconductor light receiving element 2A housed in the housing portion 7B is protected from the outside.
- a light-shielding film 35 for example, a metal film formed by a vapor deposition method, a plating method, or the like
- the first condenser lens 6 It is possible to prevent stray light from entering the light receiving section 20a without entering.
- a metal case 40 having an opening 40a corresponding to the first condenser lens 6 may be arranged outside the lens holder 5 of the light receiving device 1A as a light shielding structure. can. Even if the lens holder 5 is formed with the accommodating portion 7 whose side surface is partially uncovered, the metal case 40 can prevent stray light and protect the lens holder 5. - ⁇ Incidentally, the metal case 40 may be disposed outside the lens holder 5B having the accommodation portion 7B surrounded by the inclined side surfaces 10e to 10h. Also, by changing the combination of the lens holders 5, 5A, 5B, the semiconductor light receiving elements 2, 2A, and the metal case 40, a light receiving device other than the above can be constructed.
- the first condenser lens 6 Since the first condenser lens 6 is separate from the semiconductor light-receiving elements 2 and 2A, by increasing the distance D between the first condenser lens 6 and the semiconductor light-receiving elements 2 and 2A, the semiconductor light in the first condenser lens 6 is increased. It is possible to increase the light-receiving diameter that can be incident on the light-receiving element.
- the first condenser lens 6 formed on the first semiconductor substrate 10 has a higher refractive index than a general condenser lens made of optical glass or optical plastic, so that the light-condensing function is improved. Therefore, the distance D between the first condenser lens 6 and the semiconductor light receiving elements 2, 2A can be reduced while maintaining the light receiving diameter of the first condenser lens 6, and the light receiving devices 1, 1A, 1B, 1C can be made smaller.
- the first condenser lens 6 Since the first condenser lens 6 is formed integrally with the first semiconductor substrate 10 together with the accommodating portions 7, 7A, and 7B, it is accommodated in the first condenser lens 6 and the accommodating portions 7, 7A, and 7B. It is easy to align the semiconductor light receiving elements 2 and 2A. In addition, since the first condenser lens 6 is thinly formed by the accommodating portions 7, 7A, and 7B, the amount of incident light transmitted through the first condenser lens 6 can be increased, and the amount of received light can be reduced. contribute to the increase.
- the semiconductor light receiving element 2A has a light receiving portion 20a on the main surface 20c side of the second semiconductor substrate 20 and a second condenser lens 20b on the rear surface 20d side, and the rear surface 20d side faces the first condenser lens 6 side. It is housed in the housing portions 7, 7A, and 7B in the posture. In the light receiving devices 1A, 1B, and 1C, the incident light condensed by the first condensing lens 6 is further condensed by the second condensing lens 20b of the semiconductor light receiving element 2A and enters the light receiving section 20a.
- the first semiconductor substrate 10 on which the first condenser lens 6 is formed is a silicon substrate having a high transmittance and a high refractive index with respect to infrared light, the first condenser lens 6 and the semiconductor light receiving elements 2 and 2A are separated. The distance D between them can be reduced, which is advantageous for downsizing the light receiving devices 1, 1A, 1B, and 1C. Also, the first semiconductor substrate 10 can be processed with high accuracy by etching to form the first condenser lens 6 and the housing portions 7, 7A, and 7B.
- the light shielding structure (the light shielding film 35 or the metal case 40) allows only the light that has passed through the first condenser lens 6 to enter the semiconductor light receiving elements 2 and 2A. False detection can be prevented.
- the portions of the substrate 4 where the semiconductor light receiving elements 2 and 2A are arranged are changed to the It may protrude toward the first condenser lens 6 side, or may be recessed toward the side opposite to the first condenser lens 6 .
- those skilled in the art can implement various modifications to the above embodiment without departing from the scope of the present invention, and the present invention includes such modifications.
- 1, 1A, 1B, 1C light receiving devices 2, 2A: semiconductor light receiving elements 3a, 3b: electrodes 4: substrates 5, 5A, 5B: lens holder 6: first condenser lenses 7, 7A, 7B: housing portion 8a, 8b: metal wire 10: first semiconductor substrate 10a: first surface 10b: second surfaces 10c, 10d: side surfaces 10e to 10h: inclined side surface 20: second semiconductor substrate 20a: light receiving portion 20b: second condenser lens 20c: Main surface 20d: Back surface 31: Photoresist film 31A: Resist mask 32: Protective film 33: Etching mask 35: Light shielding film 40: Metal case 40a: Opening P: Optical axis
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Abstract
[Problem] To provide a light receiving device with which it is possible to achieve both an increase in an amount of received light and a reduction in size simultaneously. [Solution] A light receiving device (1) includes a first condensing lens (6) and a semiconductor light receiving element (2), and is configured such that incident light condensed by the first condensing lens (6) is incident on the semiconductor light receiving element (2), wherein: the first condensing lens (6) is formed at a first surface (10a) of a first semiconductor substrate (10) through which the incident light is transmitted; an accommodating portion (7) obtained by forming a recess in the first semiconductor substrate (10), from a second surface (10b) of the first semiconductor substrate (10) opposing the first surface (10a) toward the first surface (10a), is formed in such a way as to correspond to the first condensing lens (6) of the first semiconductor substrate (10); and the semiconductor light receiving element (2) is formed in a second semiconductor substrate (20) and is accommodated in the accommodating portion (7).
Description
本発明は、分光分析機器等の計測機器に装備される受光装置に関し、特に赤外光を受光する受光装置に関する。
The present invention relates to a light-receiving device installed in a measuring instrument such as a spectroscopic analyzer, and more particularly to a light-receiving device that receives infrared light.
従来から、分光分析等の計測機器には、例えば赤外光領域における検体の吸収スペクトルを検知するための受光装置が装備されている。このような受光装置には、受光する光の波長に応じたバンドギャップエネルギーの半導体受光素子が搭載され、高精度の分析のために微弱な光信号を検知することが要求される。
Conventionally, measuring instruments such as spectroscopic analysis are equipped with a light receiving device for detecting the absorption spectrum of a sample in the infrared region, for example. Such a photodetector is equipped with a semiconductor photodetector having a bandgap energy corresponding to the wavelength of light to be received, and is required to detect weak optical signals for highly accurate analysis.
受光装置が受光する光の波長が長い程、バンドギャップエネルギーが小さい半導体受光素子が使用される。バンドギャップエネルギーが小さい場合、熱等の要因によりノイズが発生し易く、微弱な光信号を光電変換したときにノイズと区別できないため、ノイズレベルを抑制する必要がある。一方、微弱な光信号の受光量を増やすことによって、光電流を大きくすることも求められている。
The longer the wavelength of the light received by the light receiving device, the smaller the bandgap energy of the semiconductor light receiving element used. When the bandgap energy is small, noise is likely to occur due to factors such as heat, and when a weak optical signal is photoelectrically converted, it cannot be distinguished from noise. Therefore, it is necessary to suppress the noise level. On the other hand, it is also required to increase the photocurrent by increasing the amount of received light of a weak optical signal.
ノイズの一因である暗電流は、半導体受光素子の受光部（フォトダイオード）の面積を小さくする程減少することが知られている。例えば受光部の面積比ｓ１：ｓ２＝１：１００の場合の暗電流の例を図１４に示す。暗電流は、バンドギャップエネルギーが小さくなる程増加すると共に、同じバンドギャップエネルギーにおいて受光部の面積が大きい程増加する傾向がある。従って、受光量の増加のために受光部の面積を大きくすることと暗電流の抑制とは相反する関係であり、両立が容易ではない。
It is known that the dark current, which is one of the causes of noise, decreases as the area of the light receiving portion (photodiode) of the semiconductor light receiving element is reduced. FIG. 14 shows an example of dark current when the area ratio of the light receiving portions is s1:s2=1:100. The dark current tends to increase as the bandgap energy decreases, and increases as the area of the light receiving portion increases at the same bandgap energy. Therefore, increasing the area of the light-receiving portion to increase the amount of light received and suppressing the dark current are in conflict with each other, and it is not easy to achieve both.
そのため、例えば特許文献１のように、半導体受光素子に一体的に形成された集光レンズによって、面積が小さい受光部に集光させることにより受光量を増加させる技術が知られている。また、特許文献２のように、シールド部材に集光レンズと受光素子を固定して、集光レンズによって受光素子の受光部に集光するように構成された受光ユニットも知られている。
Therefore, for example, as in Patent Document 1, there is known a technique of increasing the amount of received light by condensing light onto a light receiving portion having a small area using a condenser lens integrally formed with a semiconductor light receiving element. Moreover, as in Patent Document 2, a light receiving unit is also known in which a condensing lens and a light receiving element are fixed to a shield member, and light is condensed on a light receiving portion of the light receiving element by means of the condensing lens.
特許文献１のように、赤外光を受光する半導体受光素子に集光レンズを一体的に形成した場合には、例えば図１５に示すように、集光レンズ５０の光軸における凸レンズ面５０ａと受光部５１の間の距離が、半導体基板の厚さＥと略同等の０．３５ｍｍ程度になる。そして、ビーム径Ｃが１ｍｍのコリメート光は、直径Ｇが１．１ｍｍ、曲率半径ＣＲ２が０．８ｍｍの集光レンズ５０に入射する。暗電流の抑制のために、受光部５１がコリメート光のビーム断面積の１００分の１の面積（直径Ｆが０．１ｍｍ）で小さく形成されている場合、ビーム径Ｃに対して凸レンズ面５０ａと受光部５１の間の距離が小さすぎるので、集光レンズ５０によって集光された入射光Ｌの大部分は受光部５１に到達できず、受光量の増加は大きくない。
As in Patent Document 1, when a condenser lens is formed integrally with a semiconductor light-receiving element that receives infrared light, as shown in FIG. The distance between the light receiving portions 51 is approximately 0.35 mm, which is approximately the same as the thickness E of the semiconductor substrate. The collimated light with a beam diameter C of 1 mm is incident on the condenser lens 50 with a diameter G of 1.1 mm and a curvature radius CR2 of 0.8 mm. In order to suppress dark current, when the light receiving portion 51 is formed to have a small area (diameter F is 0.1 mm) of 1/100 of the beam cross-sectional area of the collimated light, the convex lens surface 50a and the light receiving portion 51 is too small, most of the incident light L condensed by the condensing lens 50 cannot reach the light receiving portion 51, and the increase in the amount of received light is not large.
一方、特許文献２では、集光レンズと半導体受光素子が別部材なので、これらの間の距離を大きくすることができる。しかし、受光部に集光するために、半導体受光素子とケースと集光レンズの３つの部材の位置合わせが必要なので、受光装置の組み立てが容易ではない。また、中央部分よりも外周部分が薄い集光レンズの割れ、欠けを防いで組み立て時に扱い易くするために、集光レンズをある程度厚く形成する必要がある。それ故、小型の受光装置を形成することが困難になり、集光レンズの透過率によっては十分な受光量を確保することができない虞がある。
On the other hand, in Patent Document 2, since the condenser lens and the semiconductor light receiving element are separate members, the distance between them can be increased. However, it is not easy to assemble the light-receiving device because it is necessary to align the semiconductor light-receiving element, the case, and the light-collecting lens in order to focus the light on the light-receiving portion. In addition, in order to prevent cracking or chipping of the condenser lens, which has a thinner peripheral portion than the central portion, and to facilitate handling during assembly, it is necessary to form the condenser lens to some extent thick. Therefore, it becomes difficult to form a compact light receiving device, and there is a possibility that a sufficient amount of received light cannot be secured depending on the transmittance of the condenser lens.
本発明の目的は、受光量増加と小型化を両立することができる受光装置を提供することである。
An object of the present invention is to provide a light receiving device that can achieve both an increase in the amount of light received and a reduction in size.
請求項１の発明の受光装置は、第１集光レンズと半導体受光素子を有し、前記第１集光レンズによって集光された入射光が前記半導体受光素子に入射するように構成された受光装置において、前記第１集光レンズは、入射光を透過させる第１半導体基板の第１面側に形成され、前記第１集光レンズに対応するように、前記第１半導体基板の前記第１面に対向する第２面から前記第１面側に向かって前記第１半導体基板を凹入させた収容部が形成され、前記半導体受光素子は、第２半導体基板に形成されて前記収容部に収容されたことを特徴としている。
According to a first aspect of the present invention, there is provided a light-receiving device having a first condenser lens and a semiconductor light-receiving element, wherein incident light condensed by the first condenser lens is incident on the semiconductor light-receiving element. In the device, the first condensing lens is formed on a first surface side of a first semiconductor substrate through which incident light is transmitted, and corresponds to the first condensing lens of the first semiconductor substrate. A housing portion is formed by recessing the first semiconductor substrate from a second surface facing the surface toward the first surface side, and the semiconductor light receiving element is formed in the second semiconductor substrate and extends into the housing portion. Characterized by containment.
上記構成によれば、受光装置は、第１半導体基板に形成された第１集光レンズと、この第１集光レンズに対応するように第１半導体基板を凹入させて形成された収容部と、半導体受光素子を有する。半導体受光素子は、第２半導体基板に形成されて第１半導体基板の収容部に収容され、第１集光レンズで集光された光が半導体受光素子に入射する。第１集光レンズが半導体受光素子と別体なので、第１集光レンズと半導体受光素子の距離を大きくすることによって、第１集光レンズにおける半導体受光素子に入射可能な受光径を大きくすることができる。また、第１半導体基板に形成された第１集光レンズは、一般的な光学ガラス製又は光学プラスチック製の集光レンズよりも屈折率が大きく集光機能が向上する。それ故、第１集光レンズにおける受光径を維持しながら第１集光レンズと半導体受光素子の距離を小さくして、受光装置を小型化することができる。そして、第１集光レンズが収容部と共に第１半導体基板に一体的に形成されているので、第１集光レンズと収容部に収容される半導体受光素子の位置合わせが容易である。その上、収容部を形成することによって第１集光レンズを薄く形成しているので、この第１集光レンズに入射する入射光の透過量を増加させることができ、受光量の増加に寄与する。
According to the above configuration, the light receiving device includes the first condensing lens formed on the first semiconductor substrate, and the accommodating portion formed by recessing the first semiconductor substrate so as to correspond to the first condensing lens. and a semiconductor light receiving element. The semiconductor light receiving element is formed on the second semiconductor substrate and accommodated in the accommodation portion of the first semiconductor substrate, and the light condensed by the first condenser lens enters the semiconductor light receiving element. Since the first condenser lens is separate from the semiconductor light receiving element, by increasing the distance between the first condenser lens and the semiconductor light receiving element, the light receiving diameter that can be incident on the semiconductor light receiving element in the first condenser lens is increased. can be done. Further, the first condenser lens formed on the first semiconductor substrate has a higher refractive index than a general condenser lens made of optical glass or optical plastic, and has an improved light-condensing function. Therefore, it is possible to reduce the distance between the first condenser lens and the semiconductor light receiving element while maintaining the light receiving diameter of the first condenser lens, thereby downsizing the light receiving device. Further, since the first condenser lens is integrally formed on the first semiconductor substrate together with the accommodating portion, it is easy to align the first condenser lens and the semiconductor light receiving element accommodated in the accommodating portion. In addition, since the first condenser lens is thinly formed by forming the accommodating portion, the amount of incident light transmitted through the first condenser lens can be increased, contributing to an increase in the amount of received light. do.
請求項２の発明の受光装置は、請求項１の発明において、前記半導体受光素子は、前記第２半導体基板の主面側に形成された受光部と裏面側に形成された第２集光レンズを有し、且つ前記裏面側を前記第１集光レンズに向けた姿勢で前記収容部に収容され、前記第１集光レンズによって集光された入射光が、前記第２集光レンズによって集光されて前記受光部に入射するように構成されたことを特徴としている。
上記構成によれば、第１集光レンズによって集光された入射光が、第２集光レンズによって集光されて受光部に入射するので、第１集光レンズにおける受光径を維持しながら第１集光レンズと半導体受光素子の間の距離を小さくして、受光装置を小型化することができる。 According to a second aspect of the invention, there is provided a light-receiving device according to the first aspect of the invention, wherein the semiconductor light-receiving element comprises a light-receiving portion formed on the main surface side of the second semiconductor substrate and a second condenser lens formed on the back surface side. and is accommodated in the accommodating portion with the back side facing the first condenser lens, and the incident light condensed by the first condenser lens is condensed by the second condenser lens It is characterized in that it is configured to be illuminated and incident on the light receiving section.
According to the above configuration, the incident light condensed by the first condensing lens is condensed by the second condensing lens and enters the light receiving section. 1. By reducing the distance between the condenser lens and the semiconductor light receiving element, the size of the light receiving device can be reduced.
上記構成によれば、第１集光レンズによって集光された入射光が、第２集光レンズによって集光されて受光部に入射するので、第１集光レンズにおける受光径を維持しながら第１集光レンズと半導体受光素子の間の距離を小さくして、受光装置を小型化することができる。 According to a second aspect of the invention, there is provided a light-receiving device according to the first aspect of the invention, wherein the semiconductor light-receiving element comprises a light-receiving portion formed on the main surface side of the second semiconductor substrate and a second condenser lens formed on the back surface side. and is accommodated in the accommodating portion with the back side facing the first condenser lens, and the incident light condensed by the first condenser lens is condensed by the second condenser lens It is characterized in that it is configured to be illuminated and incident on the light receiving section.
According to the above configuration, the incident light condensed by the first condensing lens is condensed by the second condensing lens and enters the light receiving section. 1. By reducing the distance between the condenser lens and the semiconductor light receiving element, the size of the light receiving device can be reduced.
請求項３の発明の受光装置は、請求項１又は２の発明において、入射光が赤外光であると共に前記第１半導体基板がシリコン基板であることを特徴としている。
上記構成によれば、第１集光レンズが形成される第１半導体基板が、赤外光に対して高い透過率及び高い屈折率を有するシリコン基板なので、受光装置の小型化に有利であり、高精度の加工が可能なので受光量を増加させた高性能の受光装置を形成することができる。 According to a third aspect of the invention, there is provided a light receiving device according to the first or second aspect of the invention, wherein the incident light is infrared light and the first semiconductor substrate is a silicon substrate.
According to the above configuration, since the first semiconductor substrate on which the first condenser lens is formed is a silicon substrate having a high transmittance and a high refractive index with respect to infrared light, it is advantageous for miniaturization of the light receiving device. Since high-precision processing is possible, a high-performance light-receiving device with an increased light-receiving amount can be formed.
上記構成によれば、第１集光レンズが形成される第１半導体基板が、赤外光に対して高い透過率及び高い屈折率を有するシリコン基板なので、受光装置の小型化に有利であり、高精度の加工が可能なので受光量を増加させた高性能の受光装置を形成することができる。 According to a third aspect of the invention, there is provided a light receiving device according to the first or second aspect of the invention, wherein the incident light is infrared light and the first semiconductor substrate is a silicon substrate.
According to the above configuration, since the first semiconductor substrate on which the first condenser lens is formed is a silicon substrate having a high transmittance and a high refractive index with respect to infrared light, it is advantageous for miniaturization of the light receiving device. Since high-precision processing is possible, a high-performance light-receiving device with an increased light-receiving amount can be formed.
請求項４の発明の受光装置は、請求項１～３の何れか１項の発明において、前記第１集光レンズに入射しない迷光を防止するための遮光構造を備えたことを特徴としている。
上記構成によれば、第１半導体基板は入射光を透過させるので、遮光構造によって半導体受光素子には第１集光レンズを通った光だけを入射させ、迷光による誤検知を防止することができる。 According to a fourth aspect of the invention, there is provided a light-receiving device according to any one of the first to third aspects of the invention, further comprising a light shielding structure for preventing stray light from entering the first condenser lens.
According to the above configuration, since the first semiconductor substrate transmits incident light, only the light that has passed through the first condenser lens is incident on the semiconductor light-receiving element due to the light shielding structure, and erroneous detection due to stray light can be prevented. .
上記構成によれば、第１半導体基板は入射光を透過させるので、遮光構造によって半導体受光素子には第１集光レンズを通った光だけを入射させ、迷光による誤検知を防止することができる。 According to a fourth aspect of the invention, there is provided a light-receiving device according to any one of the first to third aspects of the invention, further comprising a light shielding structure for preventing stray light from entering the first condenser lens.
According to the above configuration, since the first semiconductor substrate transmits incident light, only the light that has passed through the first condenser lens is incident on the semiconductor light-receiving element due to the light shielding structure, and erroneous detection due to stray light can be prevented. .
本発明の受光装置によれば、受光量増加と小型化を両立することができる。
According to the light receiving device of the present invention, it is possible to achieve both an increase in the amount of received light and a reduction in size.
以下、本発明を実施するための形態について実施例に基づいて説明する。
Hereinafter, the mode for carrying out the present invention will be described based on examples.
図１、図２に示すように、受光装置１は、光電変換用の半導体受光素子２と、１対の電極３ａ，３ｂを有する基板４と、基板４に固定されたレンズホルダ５を有する。レンズホルダ５の素材は入射光が透過可能な第１半導体基板１０であり、第１集光レンズ６と収容部７がレンズホルダ５に形成されている。この第１集光レンズ６の光軸Ｐの方向に入射光としてコリメート光が入射し、第１集光レンズ６によって集光された光が収容部７に収容された半導体受光素子２に入射するように構成されている。
As shown in FIGS. 1 and 2, the light receiving device 1 has a semiconductor light receiving element 2 for photoelectric conversion, a substrate 4 having a pair of electrodes 3 a and 3 b, and a lens holder 5 fixed to the substrate 4 . The material of the lens holder 5 is the first semiconductor substrate 10 through which the incident light can pass, and the lens holder 5 is formed with the first condensing lens 6 and the accommodating portion 7 . Collimated light is incident as incident light in the direction of the optical axis P of the first condenser lens 6 , and the light condensed by the first condenser lens 6 enters the semiconductor light receiving element 2 housed in the housing portion 7 . is configured as
第１集光レンズ６は、第１半導体基板１０として例えばシリコン（Ｓｉ）基板の表側に相当する第１面１０ａ側の面が凸状に形成され、第１面１０ａに対向する裏側に相当する第２面１０ｂ側の面が平坦に形成された球面平凸レンズである。第１半導体基板１０は、例えば波長が１．２μｍ以上の赤外光を透過させ、一般的な光学ガラス、光学プラスチックにおける屈折率（１．５～１．７程度）よりも大きい３．２以上の屈折率を有する。
The first condenser lens 6 has a convex surface on the first surface 10a side corresponding to the front side of a silicon (Si) substrate as the first semiconductor substrate 10, and corresponds to the back side facing the first surface 10a. It is a spherical plano-convex lens in which the surface on the second surface 10b side is formed flat. The first semiconductor substrate 10 transmits infrared light with a wavelength of 1.2 μm or more, for example, and has a refractive index of 3.2 or more, which is larger than the refractive index (about 1.5 to 1.7) of general optical glass and optical plastic. has a refractive index of
半導体受光素子２を収容するための収容部７は、第１集光レンズ６に対応するように、第１半導体基板１０を第２面１０ｂから第１面１０ａ側に向かって凹入させて形成されている。第１面１０ａ及び第２面１０ｂは、夫々第１半導体基板１０の（１１０）面である。また、収容部７に臨む第１集光レンズ６の平坦な面は、第１半導体基板１０の（１１０）面である。そして、収容部７に臨む２つの側面１０ｃ，１０ｄは、第１半導体基板１０の（１１１）面であり、互いに平行である。これら２つの側面１０ｃ，１０ｄは、第１半導体基板１０の（１１０）面に対して夫々垂直である。
The accommodating portion 7 for accommodating the semiconductor light receiving element 2 is formed by recessing the first semiconductor substrate 10 from the second surface 10b toward the first surface 10a so as to correspond to the first condenser lens 6. It is The first surface 10a and the second surface 10b are (110) surfaces of the first semiconductor substrate 10, respectively. The flat surface of the first condenser lens 6 facing the accommodating portion 7 is the (110) surface of the first semiconductor substrate 10 . Two side surfaces 10c and 10d facing the accommodating portion 7 are the (111) planes of the first semiconductor substrate 10 and are parallel to each other. These two side surfaces 10c and 10d are perpendicular to the (110) plane of the first semiconductor substrate 10, respectively.
第２半導体基板２０に形成された半導体受光素子２は、例えば直径Ｆが０．１ｍｍの受光部２０ａ（フォトダイオード）を有し、金属ワイヤ８ａ，８ｂと基板４に形成された不図示の配線を介して対応する電極３ａ、３ｂに接続されている。半導体受光素子２の受光部２０ａに入射した入射光は、電気信号（光電流）に変換されて１対の電極３ａ，３ｂを介して外部に出力される。
The semiconductor light-receiving element 2 formed on the second semiconductor substrate 20 has, for example, a light-receiving portion 20a (photodiode) with a diameter F of 0.1 mm. are connected to the corresponding electrodes 3a and 3b via the . Incident light incident on the light receiving portion 20a of the semiconductor light receiving element 2 is converted into an electric signal (photocurrent) and output to the outside via a pair of electrodes 3a and 3b.
レンズホルダ５と半導体受光素子２は、第１集光レンズ６の光軸Ｐが受光部２０ａの中心を通るように位置合わせされている。また、レンズホルダ５の厚さが例えば１．１５ｍｍに設定され、第１集光レンズ６の曲率半径ＣＲ１が１．８ｍｍ、直径Ａが１．２ｍｍ、光軸Ｐにおける厚さＢが０．２ｍｍに設定されている。
The lens holder 5 and the semiconductor light receiving element 2 are aligned so that the optical axis P of the first condenser lens 6 passes through the center of the light receiving section 20a. Further, the thickness of the lens holder 5 is set to, for example, 1.15 mm, the curvature radius CR1 of the first condenser lens 6 is 1.8 mm, the diameter A is 1.2 mm, and the thickness B at the optical axis P is 0.2 mm. is set to
この第１集光レンズ６にコリメート光が入射した場合の光線追跡シミュレーション結果を複数の光線Ｌ１で示している。ここでは、ビーム径Ｃが１ｍｍの入射光が全て受光部２０ａに入射可能なように第１集光レンズ６と受光部２０ａの間の距離Ｄが設定されている。例えば、第１集光レンズ６の収容部７に臨む平坦な面と半導体受光素子２の受光部２０ａの間の距離Ｄが０．８ｍｍ、半導体受光素子２の厚さＥが０．１５ｍｍに設定されている。尚、半導体受光素子２は、第１集光レンズ６側に受光部２０ａが形成された側を向けた姿勢で配設されているが、第２半導体基板２０を入射光が透過するので、受光部２０ａが形成された側を基板４側に向けた姿勢で距離Ｄを調整して配設することも可能である。
A ray tracing simulation result when collimated light is incident on the first condenser lens 6 is indicated by a plurality of rays L1. Here, the distance D between the first condenser lens 6 and the light receiving section 20a is set so that all incident light with a beam diameter C of 1 mm can enter the light receiving section 20a. For example, the distance D between the flat surface of the first condenser lens 6 facing the accommodating portion 7 and the light receiving portion 20a of the semiconductor light receiving element 2 is set to 0.8 mm, and the thickness E of the semiconductor light receiving element 2 is set to 0.15 mm. It is The semiconductor light-receiving element 2 is arranged with the side on which the light-receiving part 20a is formed facing the first condenser lens 6, but since the incident light passes through the second semiconductor substrate 20, It is also possible to adjust the distance D so that the side on which the portion 20a is formed faces the substrate 4 side.
半導体受光素子２は、第２半導体基板２０として例えばリン化インジウム（ＩｎＰ）基板に形成され、光吸収層として例えばＩｎＧａＡｓ層を備えたバンドギャップエネルギーが０．６ｅＶ程度の受光部２０ａを有する。尚、半導体受光素子２は、一層長波長の入射光を受光するために、ＩｎＧａＡｓよりもバンドギャップエネルギーが小さい例えばＩｎＡｓ、ＩｎＳｂ等によって形成された受光部２０ａを備えていてもよい。
The semiconductor light-receiving element 2 is formed on, for example, an indium phosphide (InP) substrate as a second semiconductor substrate 20, and has a light-receiving portion 20a having a bandgap energy of about 0.6 eV, which includes, for example, an InGaAs layer as a light absorption layer. The semiconductor light receiving element 2 may include a light receiving portion 20a made of, for example, InAs or InSb, which has a smaller bandgap energy than InGaAs, in order to receive incident light with a longer wavelength.
第１集光レンズ６と半導体受光素子２が別体なので、距離Ｄは半導体受光素子２の厚さＥ（第２半導体基板２０の厚さ）と比べて大きくすることができる。それ故、受光部２０ａの直径Ｆの１０倍程度大きいビーム径Ｃの入射光でも、第１集光レンズ６が集光して受光部２０ａに入射させることができる。そして、第１集光レンズ６における受光面積が受光部２０ａの面積の１００倍程度なので、面積が小さい受光部２０ａによって暗電流を抑制しながら、受光面積が大きい第１集光レンズ６で受けた光を受光部２０ａに集光して受光量を増加させることができる。
Since the first condenser lens 6 and the semiconductor light receiving element 2 are separate bodies, the distance D can be made larger than the thickness E of the semiconductor light receiving element 2 (thickness of the second semiconductor substrate 20). Therefore, even incident light with a beam diameter C about ten times larger than the diameter F of the light receiving portion 20a can be condensed by the first condenser lens 6 and made incident on the light receiving portion 20a. Since the light-receiving area of the first condenser lens 6 is about 100 times the area of the light-receiving part 20a, the dark current is suppressed by the light-receiving part 20a, which has a small area, while the light is received by the first condenser lens 6, which has a large light-receiving area. The amount of light received can be increased by concentrating the light on the light receiving portion 20a.
図３に示すように、半導体受光素子２の代わりに、第２集光レンズ２０ｂを備えた半導体受光素子２Ａを有する受光装置１Ａを形成することもできる。半導体受光素子２Ａは、第２半導体基板２０の主面２０ｃ側に形成された受光部２０ａと、主面２０ｃに対向する裏面２０ｄに形成された第２集光レンズ２０ｂを備え、裏面２０ｄを第１集光レンズ６側に向けた姿勢で収容部７に収容されている。そして、光線Ｌ２で示すように第１集光レンズ６によって集光された入射光が、第２集光レンズ２０ｂによって集光されて受光部２０ａに入射する。
As shown in FIG. 3, instead of the semiconductor light receiving element 2, a light receiving device 1A having a semiconductor light receiving element 2A with a second condenser lens 20b can be formed. The semiconductor light receiving element 2A includes a light receiving portion 20a formed on the principal surface 20c side of the second semiconductor substrate 20, and a second condenser lens 20b formed on the rear surface 20d facing the principal surface 20c. 1 is housed in the housing portion 7 in a posture directed toward the condenser lens 6 side. Then, the incident light condensed by the first condensing lens 6 as indicated by the light ray L2 is condensed by the second condensing lens 20b and enters the light receiving section 20a.
半導体受光素子２Ａは、例えば不図示の導電性ペースト及び基板４に形成された不図示の配線を介して、対応する電極３ａ、３ｂに接続される。半導体受光素子２Ａの受光部２０ａに入射した入射光は、電気信号（光電流）に変換されて１対の電極３ａ，３ｂを介して外部に出力される。
The semiconductor light receiving element 2A is connected to the corresponding electrodes 3a and 3b via, for example, conductive paste (not shown) and wiring (not shown) formed on the substrate 4. Incident light incident on the light receiving portion 20a of the semiconductor light receiving element 2A is converted into an electric signal (photocurrent) and output to the outside via a pair of electrodes 3a and 3b.
受光装置１Ａの第１集光レンズ６のサイズと受光部２０ａの直径Ｆは、受光装置１と同じである。第２集光レンズ２０ｂのため、例えば半導体受光素子２Ａ（第２半導体基板２０）の厚さＥが０．１９ｍｍに設定され、第１集光レンズ６の収容部７に臨む平坦な面と半導体受光素子２Ａの間の距離Ｄが０．６ｍｍに設定されている。そして、第２集光レンズ２０ｂの曲率半径ＣＲ２、直径Ｇが夫々例えば０．１５ｍｍ、０．２ｍｍに設定されている。第２集光レンズ２０ｂの集光作用も利用するので、第１集光レンズ６を有するレンズホルダ５の厚さを薄くして、受光装置１Ａを受光装置１よりも小型化することができる。
The size of the first condenser lens 6 and the diameter F of the light receiving portion 20a of the light receiving device 1A are the same as those of the light receiving device 1. For the second condenser lens 20b, for example, the thickness E of the semiconductor light receiving element 2A (second semiconductor substrate 20) is set to 0.19 mm, and the flat surface of the first condenser lens 6 facing the accommodating portion 7 and the semiconductor A distance D between the light receiving elements 2A is set to 0.6 mm. A radius of curvature CR2 and a diameter G of the second condenser lens 20b are set to, for example, 0.15 mm and 0.2 mm, respectively. Since the condensing action of the second condenser lens 20b is also used, the thickness of the lens holder 5 having the first condenser lens 6 can be reduced, and the light receiving device 1A can be made smaller than the light receiving device 1. FIG.
次に、レンズホルダ５の形成方法について説明する。
図４に示すようにレジスト膜形成工程において、第１半導体基板１０の第１面１０ａにフォトレジスト膜３１を例えば平面視円形に形成する。次にレジストマスク形成工程において、例えば１５０℃程度に加熱してフォトレジスト膜３１を溶融させ、その表面張力を利用して図５に示すように平凸レンズ形状に変形させて、レジストマスク３１Ａを形成する。 Next, a method for forming thelens holder 5 will be described.
As shown in FIG. 4, in a resist film forming step, aphotoresist film 31 is formed on the first surface 10a of the first semiconductor substrate 10, for example, in a circular shape in plan view. Next, in the resist mask forming process, the photoresist film 31 is melted by heating to, for example, about 150° C., and the surface tension of the photoresist film 31 is used to transform it into a plano-convex lens shape as shown in FIG. 5 to form a resist mask 31A. do.
図４に示すようにレジスト膜形成工程において、第１半導体基板１０の第１面１０ａにフォトレジスト膜３１を例えば平面視円形に形成する。次にレジストマスク形成工程において、例えば１５０℃程度に加熱してフォトレジスト膜３１を溶融させ、その表面張力を利用して図５に示すように平凸レンズ形状に変形させて、レジストマスク３１Ａを形成する。 Next, a method for forming the
As shown in FIG. 4, in a resist film forming step, a
図６に示すようにレンズエッチング工程において、反応性イオンエッチング（ＲＩＥ）法により、複数の矢印で示すようにエッチングガスを供給して第１半導体基板１０の第１面１０ａ側をレジストマスク３１Ａが無くなるまでエッチングする。レジストマスク３１Ａで覆われていた部分は、レジストマスク３１Ａが厚いほどエッチング量が少なくなるので、第１半導体基板１０の第１面１０ａ側にレジストマスク３１Ａの形状が反映された第１集光レンズ６の凸状の球面が形成される。
As shown in FIG. 6, in the lens etching process, the resist mask 31A is formed on the first surface 10a side of the first semiconductor substrate 10 by supplying an etching gas as indicated by a plurality of arrows by a reactive ion etching (RIE) method. Etch until it disappears. The thicker the resist mask 31A, the smaller the etching amount of the portion covered with the resist mask 31A. 6 convex spherical surfaces are formed.
そして、図７に示すように収容部エッチング工程において、第１集光レンズ６の凸状の球面が形成された第１面１０ａ側を保護膜３２で覆い、第２面１０ｂ側に収容部７形成用のエッチングマスク３３を形成し、第２面１０ｂ側から異方性エッチングを行う。このときエッチングマスク３３の形成方向を適切に選択して、例えば水酸化カリウム（ＫＯＨ）等、アルカリ性のエッチング液を用いてエッチングする。この異方性エッチングにより、第１半導体基板１０の（１１０）面に垂直であってエッチング速度が遅い第１半導体基板１０の（１１１）面が露出して、第１半導体基板１０の厚さ方向にエッチングが進行し、溝状の収容部７が形成される。
Then, as shown in FIG. 7, in the housing portion etching step, the first surface 10a side on which the convex spherical surface of the first condenser lens 6 is formed is covered with the protective film 32, and the housing portion 7 is formed on the second surface 10b side. An etching mask 33 for formation is formed, and anisotropic etching is performed from the second surface 10b side. At this time, the formation direction of the etching mask 33 is appropriately selected, and etching is performed using an alkaline etchant such as potassium hydroxide (KOH). By this anisotropic etching, the (111) plane of the first semiconductor substrate 10, which is perpendicular to the (110) plane of the first semiconductor substrate 10 and has a slow etching rate, is exposed. Then, the etching progresses to form a groove-like accommodation portion 7 .
収容部７の形成後、エッチングマスク３３と保護膜３２を除去すると、図８に示すように第１集光レンズ６と収容部７を有するレンズホルダ５が得られる。尚、図４～図８では、個片状の第１半導体基板１０を用いて説明したが、ウェハ状の第１半導体基板１０に複数の第１集光レンズ６と複数の収容部７を夫々一括形成した後で個片化することができる。また、図９のように、例えば収容部７Ａに臨む側面１０ｄを有する側壁が１つだけの庇状にレンズホルダ５Ａを形成し、このレンズホルダ５Ａと例えば半導体受光素子２Ａを備えた受光装置１Ｂを形成することもできる。
When the etching mask 33 and the protective film 32 are removed after the housing portion 7 is formed, the lens holder 5 having the first condenser lens 6 and the housing portion 7 is obtained as shown in FIG. 4 to 8, the individual piece-shaped first semiconductor substrate 10 is used for the explanation, but the wafer-shaped first semiconductor substrate 10 is provided with a plurality of first condenser lenses 6 and a plurality of accommodating portions 7, respectively. After being collectively formed, it can be separated into individual pieces. Further, as shown in FIG. 9, for example, a light receiving device 1B is provided with a lens holder 5A having a single eave-like side wall having a side surface 10d facing the housing portion 7A, and the lens holder 5A and, for example, a semiconductor light receiving element 2A. can also be formed.
第１半導体基板１０の第１面１０ａ、第２面１０ｂを（１００）面とした場合には、図１０、図１１に示すように、第１集光レンズ６と矩形の錐台状の収容部７Ｂを有するレンズホルダ５Ｂを形成することができる。この場合、第１半導体基板１０の第２面１０ｂ側から異方性エッチングを行うことにより、四方を傾斜側面１０ｅ～１０ｈで囲まれた収容部７Ｂを形成することができる。傾斜側面１０ｅ～１０ｈは、夫々第１半導体基板１０の（１１１）面であり、θ＝５４．７°である。
When the first surface 10a and the second surface 10b of the first semiconductor substrate 10 are (100) planes, as shown in FIGS. A lens holder 5B can be formed having a portion 7B. In this case, by performing anisotropic etching from the second surface 10b side of the first semiconductor substrate 10, it is possible to form the accommodating portion 7B surrounded by the inclined side surfaces 10e to 10h. Each of the inclined side surfaces 10e to 10h is the (111) plane of the first semiconductor substrate 10, and θ=54.7°.
このレンズホルダ５Ｂと例えば半導体受光素子２Ａを備えた受光装置１Ｃは、収容部７Ｂに収容される半導体受光素子２Ａが外部から保護される。第１集光レンズ６を除くレンズホルダ５Ｂの外面に、遮光構造として遮光膜３５（例えば蒸着法、メッキ法等により形成された金属膜）を形成した場合には、第１集光レンズ６に入射せずに受光部２０ａに入射する迷光を防ぐことができる。
In the light receiving device 1C including the lens holder 5B and, for example, the semiconductor light receiving element 2A, the semiconductor light receiving element 2A housed in the housing portion 7B is protected from the outside. When a light-shielding film 35 (for example, a metal film formed by a vapor deposition method, a plating method, or the like) is formed as a light-shielding structure on the outer surface of the lens holder 5B except for the first condenser lens 6, the first condenser lens 6 It is possible to prevent stray light from entering the light receiving section 20a without entering.
また、図１２、図１３に示すように、例えば受光装置１Ａのレンズホルダ５の外側に、遮光構造として第１集光レンズ６に対応する開口部４０ａを有する金属ケース４０を配設することもできる。側面の一部が覆われていない収容部７が形成されたレンズホルダ５であっても、金属ケース４０によって迷光を防ぐことができると共に、レンズホルダ５を保護するように構成することができる。尚、金属ケース４０は、四方を傾斜側面１０ｅ～１０ｈで囲まれた収容部７Ｂを有するレンズホルダ５Ｂの外側に配設してもよい。また、レンズホルダ５，５Ａ，５Ｂ、半導体受光素子２，２Ａ、金属ケース４０の組み合わせを変えて上記以外の受光装置を構成することもできる。
Further, as shown in FIGS. 12 and 13, for example, a metal case 40 having an opening 40a corresponding to the first condenser lens 6 may be arranged outside the lens holder 5 of the light receiving device 1A as a light shielding structure. can. Even if the lens holder 5 is formed with the accommodating portion 7 whose side surface is partially uncovered, the metal case 40 can prevent stray light and protect the lens holder 5. - 特許庁Incidentally, the metal case 40 may be disposed outside the lens holder 5B having the accommodation portion 7B surrounded by the inclined side surfaces 10e to 10h. Also, by changing the combination of the lens holders 5, 5A, 5B, the semiconductor light receiving elements 2, 2A, and the metal case 40, a light receiving device other than the above can be constructed.
上記受光装置１，１Ａ，１Ｂ，１Ｃの作用、効果について説明する。
第１集光レンズ６が半導体受光素子２，２Ａと別体なので、第１集光レンズ６と半導体受光素子２，２Ａの間の距離Ｄを大きくすることによって、第１集光レンズ６における半導体受光素子に入射可能な受光径を大きくすることができる。また、第１半導体基板１０に形成された第１集光レンズ６は、一般的な光学ガラス製又は光学プラスチック製の集光レンズよりも屈折率が大きいため集光機能が向上する。それ故、第１集光レンズ６における受光径を維持しながら第１集光レンズ６と半導体受光素子２，２Ａの間の距離Ｄを小さくすることができ、受光装置１，１Ａ，１Ｂ，１Ｃを小型化することができる。 Actions and effects of the light receiving devices 1, 1A, 1B, and 1C will be described.
Since thefirst condenser lens 6 is separate from the semiconductor light-receiving elements 2 and 2A, by increasing the distance D between the first condenser lens 6 and the semiconductor light-receiving elements 2 and 2A, the semiconductor light in the first condenser lens 6 is increased. It is possible to increase the light-receiving diameter that can be incident on the light-receiving element. In addition, the first condenser lens 6 formed on the first semiconductor substrate 10 has a higher refractive index than a general condenser lens made of optical glass or optical plastic, so that the light-condensing function is improved. Therefore, the distance D between the first condenser lens 6 and the semiconductor light receiving elements 2, 2A can be reduced while maintaining the light receiving diameter of the first condenser lens 6, and the light receiving devices 1, 1A, 1B, 1C can be made smaller.
第１集光レンズ６が半導体受光素子２，２Ａと別体なので、第１集光レンズ６と半導体受光素子２，２Ａの間の距離Ｄを大きくすることによって、第１集光レンズ６における半導体受光素子に入射可能な受光径を大きくすることができる。また、第１半導体基板１０に形成された第１集光レンズ６は、一般的な光学ガラス製又は光学プラスチック製の集光レンズよりも屈折率が大きいため集光機能が向上する。それ故、第１集光レンズ６における受光径を維持しながら第１集光レンズ６と半導体受光素子２，２Ａの間の距離Ｄを小さくすることができ、受光装置１，１Ａ，１Ｂ，１Ｃを小型化することができる。 Actions and effects of the
Since the
そして、第１集光レンズ６は、収容部７，７Ａ，７Ｂと共に第１半導体基板１０に一体的に形成されているので、第１集光レンズ６と収容部７，７Ａ，７Ｂに収容される半導体受光素子２，２Ａの位置合わせが容易である。その上、収容部７，７Ａ，７Ｂによって第１集光レンズ６を薄く形成しているので、この第１集光レンズ６に入射する入射光の透過量を増加させることができ、受光量の増加に寄与する。
Since the first condenser lens 6 is formed integrally with the first semiconductor substrate 10 together with the accommodating portions 7, 7A, and 7B, it is accommodated in the first condenser lens 6 and the accommodating portions 7, 7A, and 7B. It is easy to align the semiconductor light receiving elements 2 and 2A. In addition, since the first condenser lens 6 is thinly formed by the accommodating portions 7, 7A, and 7B, the amount of incident light transmitted through the first condenser lens 6 can be increased, and the amount of received light can be reduced. contribute to the increase.
半導体受光素子２Ａは、第２半導体基板２０の主面２０ｃ側の受光部２０ａと裏面２０ｄ側の第２集光レンズ２０ｂを有し、且つ裏面２０ｄ側を第１集光レンズ６側に向けた姿勢で収容部７，７Ａ，７Ｂに収容されている。受光装置１Ａ，１Ｂ，１Ｃにおいて、第１集光レンズ６によって集光された入射光が、半導体受光素子２Ａの第２集光レンズ２０ｂによってさらに集光されて受光部２０ａに入射する。それ故、第１集光レンズ６における受光径を維持しながら第１集光レンズ６と半導体受光素子２Ａの間の距離Ｄを小さくすることができ、受光装置１Ａ，１Ｂ，１Ｃを小型化することができる。
The semiconductor light receiving element 2A has a light receiving portion 20a on the main surface 20c side of the second semiconductor substrate 20 and a second condenser lens 20b on the rear surface 20d side, and the rear surface 20d side faces the first condenser lens 6 side. It is housed in the housing portions 7, 7A, and 7B in the posture. In the light receiving devices 1A, 1B, and 1C, the incident light condensed by the first condensing lens 6 is further condensed by the second condensing lens 20b of the semiconductor light receiving element 2A and enters the light receiving section 20a. Therefore, it is possible to reduce the distance D between the first condenser lens 6 and the semiconductor light receiving element 2A while maintaining the light receiving diameter of the first condenser lens 6, thereby miniaturizing the light receiving devices 1A, 1B, and 1C. be able to.
第１集光レンズ６が形成される第１半導体基板１０が、赤外光に対して高い透過率及び高い屈折率を有するシリコン基板なので、第１集光レンズ６と半導体受光素子２，２Ａの間の距離Ｄを小さくすることができ、受光装置１，１Ａ，１Ｂ，１Ｃの小型化に有利である。また、エッチングによって第１半導体基板１０を高精度に加工して、第１集光レンズ６と収容部７，７Ａ，７Ｂを形成することができる。
Since the first semiconductor substrate 10 on which the first condenser lens 6 is formed is a silicon substrate having a high transmittance and a high refractive index with respect to infrared light, the first condenser lens 6 and the semiconductor light receiving elements 2 and 2A are separated. The distance D between them can be reduced, which is advantageous for downsizing the light receiving devices 1, 1A, 1B, and 1C. Also, the first semiconductor substrate 10 can be processed with high accuracy by etching to form the first condenser lens 6 and the housing portions 7, 7A, and 7B.
第１半導体基板１０は入射光を透過させるので、遮光構造（遮光膜３５又は金属ケース４０）によって半導体受光素子２，２Ａには第１集光レンズ６を通った光だけを入射させ、迷光による誤検知を防止することができる。
Since the first semiconductor substrate 10 transmits incident light, the light shielding structure (the light shielding film 35 or the metal case 40) allows only the light that has passed through the first condenser lens 6 to enter the semiconductor light receiving elements 2 and 2A. False detection can be prevented.
第１集光レンズ６からの距離Ｄを調整するために、レンズホルダ５（第１半導体基板１０）の厚さの変更以外に、基板４における半導体受光素子２，２Ａの配設部分を、第１集光レンズ６側に突出させてもよく、第１集光レンズ６と反対側に凹入させてもよい。その他、当業者であれば、本発明の趣旨を逸脱することなく、上記実施形態に種々の変更を付加した形態で実施可能であり、本発明はその種の変更形態も包含するものである。
In order to adjust the distance D from the first condenser lens 6, in addition to changing the thickness of the lens holder 5 (the first semiconductor substrate 10), the portions of the substrate 4 where the semiconductor light receiving elements 2 and 2A are arranged are changed to the It may protrude toward the first condenser lens 6 side, or may be recessed toward the side opposite to the first condenser lens 6 . In addition, those skilled in the art can implement various modifications to the above embodiment without departing from the scope of the present invention, and the present invention includes such modifications.
１，１Ａ，１Ｂ，１Ｃ：受光装置
２，２Ａ ：半導体受光素子
３ａ，３ｂ ：電極
４ ：基板
５，５Ａ，５Ｂ：レンズホルダ
６ ：第１集光レンズ
７，７Ａ，７Ｂ：収容部
８ａ，８ｂ：金属ワイヤ
１０ ：第１半導体基板
１０ａ：第１面
１０ｂ：第２面
１０ｃ，１０ｄ：側面
１０ｅ～１０ｈ：傾斜側面
２０ ：第２半導体基板
２０ａ：受光部
２０ｂ：第２集光レンズ
２０ｃ：主面
２０ｄ：裏面
３１ ：フォトレジスト膜
３１Ａ：レジストマスク
３２ ：保護膜
３３ ：エッチングマスク
３５ ：遮光膜
４０ ：金属ケース
４０ａ：開口部
Ｐ ：光軸 1, 1A, 1B, 1C: light receiving devices 2, 2A: semiconductor light receiving elements 3a, 3b: electrodes 4: substrates 5, 5A, 5B: lens holder 6: first condenser lenses 7, 7A, 7B: housing portion 8a, 8b: metal wire 10: first semiconductor substrate 10a: first surface 10b: second surfaces 10c, 10d: side surfaces 10e to 10h: inclined side surface 20: second semiconductor substrate 20a: light receiving portion 20b: second condenser lens 20c: Main surface 20d: Back surface 31: Photoresist film 31A: Resist mask 32: Protective film 33: Etching mask 35: Light shielding film 40: Metal case 40a: Opening P: Optical axis
２，２Ａ ：半導体受光素子
３ａ，３ｂ ：電極
４ ：基板
５，５Ａ，５Ｂ：レンズホルダ
６ ：第１集光レンズ
７，７Ａ，７Ｂ：収容部
８ａ，８ｂ：金属ワイヤ
１０ ：第１半導体基板
１０ａ：第１面
１０ｂ：第２面
１０ｃ，１０ｄ：側面
１０ｅ～１０ｈ：傾斜側面
２０ ：第２半導体基板
２０ａ：受光部
２０ｂ：第２集光レンズ
２０ｃ：主面
２０ｄ：裏面
３１ ：フォトレジスト膜
３１Ａ：レジストマスク
３２ ：保護膜
３３ ：エッチングマスク
３５ ：遮光膜
４０ ：金属ケース
４０ａ：開口部
Ｐ ：光軸 1, 1A, 1B, 1C: light receiving
Claims (4)
- 第１集光レンズと半導体受光素子を有し、前記第１集光レンズによって集光された入射光が前記半導体受光素子に入射するように構成された受光装置において、
前記第１集光レンズは、入射光を透過させる第１半導体基板の第１面側に形成され、
前記第１集光レンズに対応するように、前記第１半導体基板の前記第１面に対向する第２面から前記第１面側に向かって前記第１半導体基板を凹入させた収容部が形成され、
前記半導体受光素子は、第２半導体基板に形成されて前記収容部に収容されたことを特徴とする受光装置。 A light-receiving device having a first condenser lens and a semiconductor light-receiving element, wherein the incident light condensed by the first condenser lens is incident on the semiconductor light-receiving element,
The first condenser lens is formed on the first surface side of the first semiconductor substrate through which incident light is transmitted,
A receiving portion is formed by recessing the first semiconductor substrate from a second surface facing the first surface of the first semiconductor substrate toward the first surface so as to correspond to the first condenser lens. formed,
A light-receiving device, wherein the semiconductor light-receiving element is formed on a second semiconductor substrate and accommodated in the accommodating portion. - 前記半導体受光素子は、前記第２半導体基板の主面側に形成された受光部と裏面側に形成された第２集光レンズを有し、且つ前記裏面側を前記第１集光レンズに向けた姿勢で前記収容部に収容され、
前記第１集光レンズによって集光された入射光が、前記第２集光レンズによって集光されて前記受光部に入射するように構成されたことを特徴とする請求項１に記載の受光装置。 The semiconductor light-receiving element has a light-receiving portion formed on the main surface side of the second semiconductor substrate and a second condenser lens formed on the rear surface side, and the rear surface side faces the first condenser lens. stored in the storage unit in a posture of
2. The light-receiving device according to claim 1, wherein the incident light condensed by said first condensing lens is condensed by said second condensing lens and enters said light-receiving part. . - 入射光が赤外光であると共に前記第１半導体基板がシリコン基板であることを特徴とする請求項１又は２に記載の受光装置。 3. The light receiving device according to claim 1, wherein the incident light is infrared light and the first semiconductor substrate is a silicon substrate.
- 前記第１集光レンズに入射しない迷光を防止するための遮光構造を備えたことを特徴とする請求項１～３の何れか１項に記載の受光装置。 The light receiving device according to any one of claims 1 to 3, further comprising a light shielding structure for preventing stray light that does not enter the first condenser lens.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021551569A JP7044430B1 (en) | 2021-06-11 | 2021-06-11 | Light receiving device |
| PCT/JP2021/022358 WO2022259535A1 (en) | 2021-06-11 | 2021-06-11 | Light receiving device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/022358 WO2022259535A1 (en) | 2021-06-11 | 2021-06-11 | Light receiving device |
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| WO2022259535A1 true WO2022259535A1 (en) | 2022-12-15 |
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| WO (1) | WO2022259535A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227676A (en) * | 2006-02-23 | 2007-09-06 | Matsushita Electric Works Ltd | Infrared device integrated apparatus |
| CN104157719A (en) * | 2014-07-08 | 2014-11-19 | 浙江大立科技股份有限公司 | Wafer-level packaged infrared detector and preparation method thereof |
| JP2017032731A (en) * | 2015-07-31 | 2017-02-09 | 住友電気工業株式会社 | Multiple wavelength light reception module |
| DE102015217290A1 (en) * | 2015-09-10 | 2017-03-16 | Robert Bosch Gmbh | Microelectronic arrangement and corresponding production method for a microelectronic arrangement |
-
2021
- 2021-06-11 WO PCT/JP2021/022358 patent/WO2022259535A1/en active Application Filing
- 2021-06-11 JP JP2021551569A patent/JP7044430B1/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227676A (en) * | 2006-02-23 | 2007-09-06 | Matsushita Electric Works Ltd | Infrared device integrated apparatus |
| CN104157719A (en) * | 2014-07-08 | 2014-11-19 | 浙江大立科技股份有限公司 | Wafer-level packaged infrared detector and preparation method thereof |
| JP2017032731A (en) * | 2015-07-31 | 2017-02-09 | 住友電気工業株式会社 | Multiple wavelength light reception module |
| DE102015217290A1 (en) * | 2015-09-10 | 2017-03-16 | Robert Bosch Gmbh | Microelectronic arrangement and corresponding production method for a microelectronic arrangement |
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|---|---|
| JPWO2022259535A1 (en) | 2022-12-15 |
| JP7044430B1 (en) | 2022-03-30 |
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