JP7043372B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP7043372B2 JP7043372B2 JP2018172727A JP2018172727A JP7043372B2 JP 7043372 B2 JP7043372 B2 JP 7043372B2 JP 2018172727 A JP2018172727 A JP 2018172727A JP 2018172727 A JP2018172727 A JP 2018172727A JP 7043372 B2 JP7043372 B2 JP 7043372B2
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- 238000003860 storage Methods 0.000 claims description 182
- 238000009792 diffusion process Methods 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 238000009825 accumulation Methods 0.000 claims description 8
- 238000012432 intermediate storage Methods 0.000 claims description 6
- 239000003086 colorant Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 29
- 230000004048 modification Effects 0.000 description 25
- 238000012986 modification Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 16
- 230000001360 synchronised effect Effects 0.000 description 5
- 230000003111 delayed effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Description
以下、図面を参照して実施形態を説明する。
次に、実施形態に係る固体撮像装置1の動作について説明をする。
実施形態の変形例1では、前段蓄積部が蓄積ゲートA2によって構成されるが、前段蓄積部は、蓄積ダイオードDaによって構成されてもよい。
実施形態及び変形例1では、バリアゲートA3を有するが、バリアゲートA3を有しなくてもよい。
実施形態及び他の変形例では、第3色画素Bの画素信号Vbは、1周期遅れて第1色画素Rの画素信号Vrと同期するが、1周期遅れずに、画素信号Vrと画素信号Vbを同期させてもよい。
Claims (10)
- カラーフィルタを有し、入射光を光電変換する受光素子と、
前記受光素子から信号電荷を読み出す読出ゲートと、
前記受光素子から読み出した前記信号電荷を蓄積する前段蓄積部と、
前記前段蓄積部から移送した前記信号電荷を蓄積する蓄積ダイオードと、
前記蓄積ダイオードから転送した前記信号電荷を信号電圧に変換するフローティングディフュージョンと、
前記信号電圧に応じた画素信号を生成するアンプトランジスタと、
前記アンプトランジスタのゲート電圧を基準電圧にリセットするリセットトランジスタと、
前記画素信号を出力するアドレストランジスタと、
を有する固体撮像装置。 - 前記受光素子は、複数設けられ、
前記前段蓄積部及び前記蓄積ダイオードは、複数の前記受光素子の各々に設けられる、
請求項1に記載の固体撮像装置。 - 制御回路を有し、
前記制御回路は、同色の前記カラーフィルタ毎に、前記前段蓄積部における前記信号電荷の蓄積周期を制御する、
請求項1に記載の固体撮像装置。 - 制御回路を有し、
前記制御回路は、同色の前記カラーフィルタを有する画素毎に定められた蓄積周期において、前記前段蓄積部が前記信号電荷を蓄積するように制御する、
請求項1に記載の固体撮像装置。 - 制御回路を有し、
前記受光素子は、副走査方向に色の異なる前記カラーフィルタを有し、
前記制御回路は、前記カラーフィルタの色に応じて定められた蓄積周期において、前記前段蓄積部が前記信号電荷を蓄積するように制御する、
請求項1に記載の固体撮像装置。 - 前記制御回路は、各色の前記カラーフィルタを有する画素の前記画素信号を同期して出力するように制御する、請求項5に記載の固体撮像装置。
- 前記制御回路は、前記副走査方向と直交する主走査方向の位置に応じ、各色の前記カラーフィルタを有する画素が同期し、前記蓄積ダイオードから前記フローティングディフュージョンに前記信号電荷を転送するように制御する、請求項5に記載の固体撮像装置。
- 中間蓄積部を有し、
前記中間蓄積部は、前記前段蓄積部と前記蓄積ダイオードの間に設けられ、前記信号電荷を蓄積する、
請求項1に記載の固体撮像装置。 - 制御回路を有し、
前記制御回路は、前記前段蓄積部、前記中間蓄積部及び前記蓄積ダイオードが前記信号電荷を蓄積する蓄積周期を前記カラーフィルタの色に応じて制御する、
請求項8に記載の固体撮像装置。 - 第1色画素及び第2色画素を有し、
前記第1色画素は、
第1露光周期によって光電変換した第1受光素子から読み出された第1信号電荷を蓄積する第1前段蓄積部と、
前記前段蓄積部から前記第1信号電荷を移送され、信号出力周期の開始前に、前記第1信号電荷を蓄積する第1蓄積ダイオードと、
前記信号出力周期に、前記第1蓄積ダイオードから転送された前記第1信号電荷に応じた第1画素信号を出力する第1電荷電圧変換回路と、
を有し、
前記第2色画素は、
前記第1露光周期とは異なる第2露光周期によって光電変換した第2受光素子から読み出された第2信号電荷を蓄積する第2前段蓄積部と、
前記信号出力周期の開始前に、前記第2前段蓄積部から移送された前記第2信号電荷を蓄積する第2蓄積ダイオードと、
前記信号出力周期に、前記第2蓄積ダイオードから転送された前記第2信号電荷に応じた第2画素信号を出力する第2電荷電圧変換回路と、
を有する、
固体撮像装置。
Priority Applications (3)
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JP2018172727A JP7043372B2 (ja) | 2018-09-14 | 2018-09-14 | 固体撮像装置 |
CN201910113586.5A CN110913187B (zh) | 2018-09-14 | 2019-02-14 | 固体摄像装置 |
US16/276,871 US10855944B2 (en) | 2018-09-14 | 2019-02-15 | Solid-state image pickup apparatus |
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JP2018172727A JP7043372B2 (ja) | 2018-09-14 | 2018-09-14 | 固体撮像装置 |
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JP7043372B2 true JP7043372B2 (ja) | 2022-03-29 |
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KR20210001733A (ko) * | 2019-06-28 | 2021-01-06 | 삼성전자주식회사 | 디지털 픽셀 및 이를 포함하는 이미지 센서 |
US20220128402A1 (en) * | 2020-10-22 | 2022-04-28 | Quantum-Si Incorporated | Integrated circuit with sequentially-coupled charge storage and associated techniques |
Citations (2)
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JP2007336519A (ja) | 2006-05-16 | 2007-12-27 | Konica Minolta Holdings Inc | 固体撮像装置 |
JP2017123533A (ja) | 2016-01-06 | 2017-07-13 | ソニー株式会社 | 固体撮像素子、固体撮像素子の駆動方法、及び、電子機器 |
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EP1594312A4 (en) * | 2003-02-13 | 2006-10-04 | Matsushita Electric Ind Co Ltd | SOLID STATE VIEWING DEVICE, ASSOCIATED CONTROL METHOD, AND CAMERA USING THE DEVICE |
JP4686310B2 (ja) | 2005-09-07 | 2011-05-25 | 東芝マイクロエレクトロニクス株式会社 | 固体撮像装置 |
JP4734270B2 (ja) | 2007-02-15 | 2011-07-27 | 東芝マイクロエレクトロニクス株式会社 | 固体撮像装置及びその駆動方法 |
JP2010124418A (ja) * | 2008-11-21 | 2010-06-03 | Toshiba Corp | 固体撮像装置 |
JP2013153091A (ja) | 2012-01-26 | 2013-08-08 | Toshiba Corp | 固体撮像装置 |
US9741754B2 (en) * | 2013-03-06 | 2017-08-22 | Apple Inc. | Charge transfer circuit with storage nodes in image sensors |
JP2015019004A (ja) | 2013-07-12 | 2015-01-29 | 三菱電機株式会社 | イメージセンサおよびマスクセット |
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JP2007336519A (ja) | 2006-05-16 | 2007-12-27 | Konica Minolta Holdings Inc | 固体撮像装置 |
JP2017123533A (ja) | 2016-01-06 | 2017-07-13 | ソニー株式会社 | 固体撮像素子、固体撮像素子の駆動方法、及び、電子機器 |
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US10855944B2 (en) | 2020-12-01 |
CN110913187B (zh) | 2021-12-21 |
US20200092510A1 (en) | 2020-03-19 |
JP2020047994A (ja) | 2020-03-26 |
CN110913187A (zh) | 2020-03-24 |
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