JP7039051B2 - 大気圧での化学蒸着（ａｐ－ｃｖｄ）により銅基板にグラフェンを製造する改良方法および改良システム - Google Patents

大気圧での化学蒸着（ａｐ－ｃｖｄ）により銅基板にグラフェンを製造する改良方法および改良システム Download PDF

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JP7039051B2
JP7039051B2 JP2019524490A JP2019524490A JP7039051B2 JP 7039051 B2 JP7039051 B2 JP 7039051B2 JP 2019524490 A JP2019524490 A JP 2019524490A JP 2019524490 A JP2019524490 A JP 2019524490A JP 7039051 B2 JP7039051 B2 JP 7039051B2
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copper sheets
copper
cylindrical chamber
producing graphene
graphene according
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パトリシオ・アベルレ・タピア
クリスティアン・オレリャナ・ゴメス
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Universidad Tecnica Federico Santa Maria USM
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
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JP2019524490A 2016-07-21 2017-07-18 大気圧での化学蒸着（ａｐ－ｃｖｄ）により銅基板にグラフェンを製造する改良方法および改良システム Expired - Fee Related JP7039051B2 (ja)

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Application Number Priority Date Filing Date Title
CL2016001858A CL2016001858A1 (es) 2016-07-21 2016-07-21 Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado
CL1858-2016 2016-07-21
PCT/CL2017/050032 WO2018014143A1 (es) 2016-07-21 2017-07-18 Método y sistema para producir grafeno sobre un substrato de cobre por deposición de vapores químicos (ap-cvd) modificado

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JP2019529323A JP2019529323A (ja) 2019-10-17
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US (1) US11624114B2 (cg-RX-API-DMAC7.html)
EP (1) EP3489194A4 (cg-RX-API-DMAC7.html)
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KR (1) KR102408821B1 (cg-RX-API-DMAC7.html)
CL (1) CL2016001858A1 (cg-RX-API-DMAC7.html)
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CL2016001858A1 (es) 2016-07-21 2017-02-17 Univ Técnica Federico Santa Mar+Ia Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado
KR20220070031A (ko) * 2019-09-30 2022-05-27 램 리써치 코포레이션 리모트 플라즈마를 사용한 선택적인 그래핀 증착
CN115380365A (zh) 2020-02-13 2022-11-22 朗姆研究公司 具有无穷大选择性的高深宽比蚀刻
JP2023514831A (ja) 2020-02-19 2023-04-11 ラム リサーチ コーポレーション グラフェン集積化
CN115433920B (zh) * 2021-06-03 2024-05-14 上海新池能源科技有限公司 生长单层石墨烯的工艺方法
CN113566044A (zh) * 2021-07-30 2021-10-29 重庆大学 一种获取连续高温氯气的加热方法
CN113699503B (zh) * 2021-08-31 2022-09-09 上海交通大学 金属表面具有多相复合碳源的石墨烯制备方法及装置
CN114459336A (zh) * 2022-03-04 2022-05-10 广东粤港澳大湾区国家纳米科技创新研究院 石墨烯应变传感器及石墨烯应变传感器的制备方法
CN115125524A (zh) * 2022-07-05 2022-09-30 常州第六元素半导体有限公司 一种分段式卷对卷cvd石墨烯连续生长设备
CN115744886B (zh) * 2022-11-24 2024-04-19 广东墨睿科技有限公司 一种石墨烯生长支架及生长石墨烯的方法

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WO2014038803A1 (en) 2012-09-04 2014-03-13 Samsung Techwin Co., Ltd Catalyst metal film-supporting device and method and apparatus for synthesizing multiple graphene films

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US20100301212A1 (en) * 2009-05-18 2010-12-02 The Regents Of The University Of California Substrate-free gas-phase synthesis of graphene sheets
KR101912798B1 (ko) * 2011-01-31 2018-10-30 한화에어로스페이스 주식회사 그래핀 합성장치 및 합성방법
GB2516372B (en) * 2012-01-06 2021-01-13 Ut Battelle Llc High quality large scale single and multilayer graphene production by chemical vapor deposition
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Patent Citations (1)

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WO2014038803A1 (en) 2012-09-04 2014-03-13 Samsung Techwin Co., Ltd Catalyst metal film-supporting device and method and apparatus for synthesizing multiple graphene films

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WO2018014143A1 (es) 2018-01-25
EP3489194A4 (en) 2020-04-22
KR20190032401A (ko) 2019-03-27
KR102408821B1 (ko) 2022-06-14
CL2016001858A1 (es) 2017-02-17
US20190233942A1 (en) 2019-08-01
US11624114B2 (en) 2023-04-11
JP2019529323A (ja) 2019-10-17

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