JP2019529323A5 - - Google Patents

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JP2019529323A5
JP2019529323A5 JP2019524490A JP2019524490A JP2019529323A5 JP 2019529323 A5 JP2019529323 A5 JP 2019529323A5 JP 2019524490 A JP2019524490 A JP 2019524490A JP 2019524490 A JP2019524490 A JP 2019524490A JP 2019529323 A5 JP2019529323 A5 JP 2019529323A5
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JP
Japan
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graphene
shows
raman spectrum
region
methane
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JP2019524490A
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English (en)
Japanese (ja)
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JP7039051B2 (ja
JP2019529323A (ja
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Priority claimed from CL2016001858A external-priority patent/CL2016001858A1/es
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JP2019524490A 2016-07-21 2017-07-18 大気圧での化学蒸着（ａｐ－ｃｖｄ）により銅基板にグラフェンを製造する改良方法および改良システム Expired - Fee Related JP7039051B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CL2016001858A CL2016001858A1 (es) 2016-07-21 2016-07-21 Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado
CL1858-2016 2016-07-21
PCT/CL2017/050032 WO2018014143A1 (es) 2016-07-21 2017-07-18 Método y sistema para producir grafeno sobre un substrato de cobre por deposición de vapores químicos (ap-cvd) modificado

Publications (3)

Publication Number Publication Date
JP2019529323A JP2019529323A (ja) 2019-10-17
JP2019529323A5 true JP2019529323A5 (cg-RX-API-DMAC7.html) 2021-01-21
JP7039051B2 JP7039051B2 (ja) 2022-03-22

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JP2019524490A Expired - Fee Related JP7039051B2 (ja) 2016-07-21 2017-07-18 大気圧での化学蒸着（ａｐ－ｃｖｄ）により銅基板にグラフェンを製造する改良方法および改良システム

Country Status (6)

Country Link
US (1) US11624114B2 (cg-RX-API-DMAC7.html)
EP (1) EP3489194A4 (cg-RX-API-DMAC7.html)
JP (1) JP7039051B2 (cg-RX-API-DMAC7.html)
KR (1) KR102408821B1 (cg-RX-API-DMAC7.html)
CL (1) CL2016001858A1 (cg-RX-API-DMAC7.html)
WO (1) WO2018014143A1 (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CL2016001858A1 (es) 2016-07-21 2017-02-17 Univ Técnica Federico Santa Mar+Ia Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado
KR20220070031A (ko) * 2019-09-30 2022-05-27 램 리써치 코포레이션 리모트 플라즈마를 사용한 선택적인 그래핀 증착
CN115380365A (zh) 2020-02-13 2022-11-22 朗姆研究公司 具有无穷大选择性的高深宽比蚀刻
JP2023514831A (ja) 2020-02-19 2023-04-11 ラム リサーチ コーポレーション グラフェン集積化
CN115433920B (zh) * 2021-06-03 2024-05-14 上海新池能源科技有限公司 生长单层石墨烯的工艺方法
CN113566044A (zh) * 2021-07-30 2021-10-29 重庆大学 一种获取连续高温氯气的加热方法
CN113699503B (zh) * 2021-08-31 2022-09-09 上海交通大学 金属表面具有多相复合碳源的石墨烯制备方法及装置
CN114459336A (zh) * 2022-03-04 2022-05-10 广东粤港澳大湾区国家纳米科技创新研究院 石墨烯应变传感器及石墨烯应变传感器的制备方法
CN115125524A (zh) * 2022-07-05 2022-09-30 常州第六元素半导体有限公司 一种分段式卷对卷cvd石墨烯连续生长设备
CN115744886B (zh) * 2022-11-24 2024-04-19 广东墨睿科技有限公司 一种石墨烯生长支架及生长石墨烯的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4698354B2 (ja) * 2005-09-15 2011-06-08 株式会社リコー Ｃｖｄ装置
US20100301212A1 (en) * 2009-05-18 2010-12-02 The Regents Of The University Of California Substrate-free gas-phase synthesis of graphene sheets
KR101912798B1 (ko) * 2011-01-31 2018-10-30 한화에어로스페이스 주식회사 그래핀 합성장치 및 합성방법
GB2516372B (en) * 2012-01-06 2021-01-13 Ut Battelle Llc High quality large scale single and multilayer graphene production by chemical vapor deposition
GB201215579D0 (en) * 2012-08-31 2012-10-17 Univ Leiden Thin film formation
KR20140030977A (ko) * 2012-09-04 2014-03-12 삼성테크윈 주식회사 촉매 금속 지지 장치, 그래핀 다매 합성 장치 및 그래핀 다매 합성 방법.
US20150140211A1 (en) * 2013-11-19 2015-05-21 Cvd Equipment Corporation Scalable 2D-Film CVD Synthesis
CL2016001858A1 (es) 2016-07-21 2017-02-17 Univ Técnica Federico Santa Mar+Ia Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado

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