JP7036045B2 - 半導体装置の製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 239000002184 metal Substances 0.000 claims description 89
- 230000004888 barrier function Effects 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 35
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 238000003825 pressing Methods 0.000 claims description 6
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 1
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/7525—Means for applying energy, e.g. heating means
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- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8303—Reshaping the layer connector in the bonding apparatus, e.g. flattening the layer connector
- H01L2224/83047—Reshaping the layer connector in the bonding apparatus, e.g. flattening the layer connector by mechanical means, e.g. severing, pressing, stamping
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Description
本発明に係る他の半導体装置の製造方法は、絶縁層の上に第1の電極と第2の電極を互いに離間して形成する工程と、金属端子の超音波接合部の外周部に前記金属端子と同じ材料からなる障壁を形成する工程と、超音波ツールを用いて前記金属端子の前記超音波接合部に加圧力と超音波振動を加えることで前記金属端子を前記第1の電極に超音波接合する工程とを備え、前記超音波接合部の前記外周部において前記第2の電極の側のみに前記障壁を形成することを特徴とする。
図1は、実施の形態1に係る半導体装置の製造方法を示す斜視図である。図2は、図1のI-IIに沿った断面図である。図3は、実施の形態1に係る金属端子を示す斜視図である。図4は、図1のIII-IVに沿った断面図である。
図11は、実施の形態2に係る金属端子を示す斜視図である。図12は、実施の形態2に係る金属端子に超音波ツールを押し当てた状態を示す断面図である。図13は、実施の形態2に係る半導体装置の製造方法により金属端子が超音波接合された状態を示す断面図である。
図17は、実施の形態3に係る金属端子を示す斜視図である。図18は、実施の形態3に係る金属端子に超音波ツールを押し当てた状態を示す断面図である。図19は、実施の形態3に係る半導体装置の製造方法により金属端子が超音波接合された状態を示す断面図である。
Claims (5)
- 絶縁層の上に第1の電極と第2の電極を互いに離間して形成する工程と、
金属端子の超音波接合部の外周部に前記金属端子と同じ材料からなる障壁を形成する工程と、
超音波ツールを用いて前記金属端子の前記超音波接合部に加圧力と超音波振動を加えることで前記金属端子を前記第1の電極に超音波接合する工程とを備え、
前記障壁の内側面の下側に凹部が設けられていることを特徴とする半導体装置の製造方法。 - 絶縁層の上に第1の電極と第2の電極を互いに離間して形成する工程と、
金属端子の超音波接合部の外周部に前記金属端子と同じ材料からなる障壁を形成する工程と、
超音波ツールを用いて前記金属端子の前記超音波接合部に加圧力と超音波振動を加えることで前記金属端子を前記第1の電極に超音波接合する工程とを備え、
前記超音波接合部の前記外周部において前記第2の電極の側のみに前記障壁を形成することを特徴とする半導体装置の製造方法。 - 前記障壁の内側面がテーパーであることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記金属端子は、前記超音波接合部を含む先端部と、前記先端部に対して上方に折り曲げられた本体部とを有し、
前記超音波接合部の前記外周部において前記本体部の側には前記障壁を形成しないことを特徴とする請求項1~3の何れか1項に記載の半導体装置の製造方法。 - 前記金属端子の前記先端部の下面は平面であることを特徴とする請求項4に記載の半導体装置の製造方法。
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JP2019004633A JP7036045B2 (ja) | 2019-01-15 | 2019-01-15 | 半導体装置の製造方法 |
US16/502,055 US10872877B2 (en) | 2019-01-15 | 2019-07-03 | Method of manufacturing semiconductor device |
DE102020200099.9A DE102020200099B4 (de) | 2019-01-15 | 2020-01-08 | Verfahren zum Herstellen einer Halbleitervorrichtung |
CN202010021536.7A CN111435647B (zh) | 2019-01-15 | 2020-01-09 | 半导体装置的制造方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2016031020A1 (ja) | 2014-08-28 | 2016-03-03 | 三菱電機株式会社 | 半導体装置 |
JP2017092293A (ja) | 2015-11-12 | 2017-05-25 | 京セラ株式会社 | パワー半導体モジュール及びその製造方法 |
JP2018170344A (ja) | 2017-03-29 | 2018-11-01 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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JP4537370B2 (ja) | 2006-12-04 | 2010-09-01 | 日立オートモティブシステムズ株式会社 | 電子装置 |
JP2013051366A (ja) * | 2011-08-31 | 2013-03-14 | Hitachi Ltd | パワーモジュール及びその製造方法 |
EP2571053A1 (en) | 2011-09-19 | 2013-03-20 | ABB Technology AG | Power semiconductor arrangement and method of forming thereof |
JP2016134547A (ja) | 2015-01-21 | 2016-07-25 | 三菱電機株式会社 | 半導体装置 |
JP2019004633A (ja) | 2017-06-16 | 2019-01-10 | 株式会社豊田自動織機 | 電力変換装置 |
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WO2016031020A1 (ja) | 2014-08-28 | 2016-03-03 | 三菱電機株式会社 | 半導体装置 |
JP2017092293A (ja) | 2015-11-12 | 2017-05-25 | 京セラ株式会社 | パワー半導体モジュール及びその製造方法 |
JP2018170344A (ja) | 2017-03-29 | 2018-11-01 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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CN111435647A (zh) | 2020-07-21 |
DE102020200099B4 (de) | 2023-07-27 |
CN111435647B (zh) | 2023-10-10 |
JP2020113683A (ja) | 2020-07-27 |
US10872877B2 (en) | 2020-12-22 |
DE102020200099A1 (de) | 2020-07-16 |
US20200227381A1 (en) | 2020-07-16 |
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