JP7035069B2 - ２つのフォトマスクを比較することによるフォトマスクの検査 - Google Patents

２つのフォトマスクを比較することによるフォトマスクの検査 Download PDF

Info

Publication number
JP7035069B2
JP7035069B2 JP2019545264A JP2019545264A JP7035069B2 JP 7035069 B2 JP7035069 B2 JP 7035069B2 JP 2019545264 A JP2019545264 A JP 2019545264A JP 2019545264 A JP2019545264 A JP 2019545264A JP 7035069 B2 JP7035069 B2 JP 7035069B2
Authority
JP
Japan
Prior art keywords
reticle
inspection
image
images
reticles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019545264A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020510864A5 (enExample
JP2020510864A (ja
Inventor
ウェストン エル ソーサ
ヤーリン シオン
カール イー ヘス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2020510864A publication Critical patent/JP2020510864A/ja
Publication of JP2020510864A5 publication Critical patent/JP2020510864A5/ja
Application granted granted Critical
Publication of JP7035069B2 publication Critical patent/JP7035069B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Signal Processing (AREA)
  • Quality & Reliability (AREA)
  • Toxicology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Manufacturing & Machinery (AREA)
  • Image Processing (AREA)
JP2019545264A 2017-02-21 2018-02-19 ２つのフォトマスクを比較することによるフォトマスクの検査 Active JP7035069B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/438,588 US10451563B2 (en) 2017-02-21 2017-02-21 Inspection of photomasks by comparing two photomasks
US15/438,588 2017-02-21
PCT/US2018/018578 WO2018156442A1 (en) 2017-02-21 2018-02-19 Inspection of photomasks by comparing two photomasks

Publications (3)

Publication Number Publication Date
JP2020510864A JP2020510864A (ja) 2020-04-09
JP2020510864A5 JP2020510864A5 (enExample) 2021-04-01
JP7035069B2 true JP7035069B2 (ja) 2022-03-14

Family

ID=63167640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019545264A Active JP7035069B2 (ja) 2017-02-21 2018-02-19 ２つのフォトマスクを比較することによるフォトマスクの検査

Country Status (6)

Country Link
US (1) US10451563B2 (enExample)
JP (1) JP7035069B2 (enExample)
KR (1) KR102329153B1 (enExample)
IL (1) IL268480B (enExample)
TW (1) TWI760437B (enExample)
WO (1) WO2018156442A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018180578A (ja) * 2017-04-03 2018-11-15 富士通株式会社 設計支援プログラム、情報処理装置、および設計支援方法
JP2018180875A (ja) * 2017-04-12 2018-11-15 富士通株式会社 判定装置、判定方法および判定プログラム
US10755405B2 (en) * 2017-11-24 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for diagnosing a semiconductor wafer
US11055464B2 (en) * 2018-08-14 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Critical dimension uniformity
US10866197B2 (en) * 2018-09-20 2020-12-15 KLA Corp. Dispositioning defects detected on extreme ultraviolet photomasks
WO2020079567A1 (en) * 2018-10-15 2020-04-23 3M Innovative Properties Company Automated inspection for sheet parts of arbitrary shape from manufactured film
IL282349B2 (en) * 2018-10-23 2025-04-01 Asml Netherlands Bv Device and method for adaptive alignment
US11079672B2 (en) * 2018-10-31 2021-08-03 Taiwan Semiconductor Manufacturing Company Ltd. Method and system for layout enhancement based on inter-cell correlation
US10545099B1 (en) * 2018-11-07 2020-01-28 Kla-Tencor Corporation Ultra-high sensitivity hybrid inspection with full wafer coverage capability
JP2020148615A (ja) * 2019-03-13 2020-09-17 株式会社ニューフレアテクノロジー 参照画像生成方法およびパターン検査方法
KR20220079936A (ko) * 2019-10-11 2022-06-14 어플라이드 머티어리얼스, 인코포레이티드 정렬 벡터들을 비교하는 방법 및 다이 시스템
US11442021B2 (en) * 2019-10-11 2022-09-13 Kla Corporation Broadband light interferometry for focal-map generation in photomask inspection
CN110992322A (zh) * 2019-11-25 2020-04-10 创新奇智(青岛)科技有限公司 基于卷积神经网络的贴片掩膜检测系统及检测方法
US11293970B2 (en) * 2020-01-12 2022-04-05 Kla Corporation Advanced in-line part average testing
KR102826898B1 (ko) * 2020-04-17 2025-07-01 타스밋 가부시키가이샤 패턴 매칭 방법
US11379972B2 (en) * 2020-06-03 2022-07-05 Applied Materials Israel Ltd. Detecting defects in semiconductor specimens using weak labeling
KR102425392B1 (ko) * 2020-06-17 2022-07-28 주식회사 앤에이치씨 블랭크 마스크의 재활용 가능 여부를 판단하기 위한 블랭크 마스크 장치 및 방법
US11704471B2 (en) * 2020-09-16 2023-07-18 Synopsys, Inc. Three-dimensional mask simulations based on feature images
US11636587B2 (en) * 2020-12-30 2023-04-25 Applied Materials Israel Ltd. Inspection of a semiconductor specimen
US12481213B2 (en) 2021-09-02 2025-11-25 Synopsys, Inc. Mask corner rounding effects in three-dimensional mask simulations using feature images
US12631956B2 (en) 2021-10-01 2026-05-19 Synopsys, Inc. Mask fabrication effects in three-dimensional mask simulations using feature images
US12474634B2 (en) 2021-11-18 2025-11-18 Synopsys, Inc. Mask synthesis integrating mask fabrication effects and wafer lithography effects
EP4449205A1 (en) * 2021-12-17 2024-10-23 ASML Netherlands B.V. Overlay metrology based on template matching with adaptive weighting
CN115965574B (zh) * 2022-08-31 2025-03-14 东方晶源微电子科技(北京)股份有限公司 基于设计版图的扫描电子显微镜图像缺陷检测方法、装置
CN120266055A (zh) * 2022-12-08 2025-07-04 镭亚股份有限公司 大幅面压印光刻方法及压印光刻模具
US20250245815A1 (en) * 2024-01-31 2025-07-31 Kla Corporation Adaptive and robust detection of large defects and image misalignment

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004317975A (ja) 2003-04-18 2004-11-11 Toshiba Corp フォトマスク及びこのフォトマスクを用いた半導体装置の製造方法
US20080187842A1 (en) 2007-02-06 2008-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method and System For Wafer Inspection
JP2014515859A (ja) 2011-04-26 2014-07-03 ケーエルエー−テンカー コーポレイション データベース駆動型のセルツーセルレチクル検査
JP2014519598A (ja) 2011-04-26 2014-08-14 ケーエルエー−テンカー コーポレイション ハイブリッドレチクル検査のための方法及びシステム
JP2015510149A (ja) 2012-02-15 2015-04-02 ケーエルエー−テンカー コーポレイション レチクルの時間変化強度マップの生成
JP2016528497A (ja) 2013-07-29 2016-09-15 ケーエルエー−テンカー コーポレイション フォトマスク欠陥性における変化の監視

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419664A (en) 1977-07-15 1979-02-14 Nippon Jidoseigyo Ltd Device for inspecting fault of pattern
DE69208413T2 (de) * 1991-08-22 1996-11-14 Kla Instr Corp Gerät zur automatischen Prüfung von Photomaske
US6064484A (en) 1996-03-13 2000-05-16 Fujitsu Limited Pattern inspection method and system
JP3639079B2 (ja) * 1996-03-13 2005-04-13 富士通株式会社 パターン検査方法と検査装置
JP3865156B2 (ja) * 1997-04-24 2007-01-10 株式会社ニコン 画像比較装置およびこれを用いたウエハ検査装置とウエハ検査システム
US6516085B1 (en) 1999-05-03 2003-02-04 Kla-Tencor Apparatus and methods for collecting global data during a reticle inspection
JP4663214B2 (ja) 2001-03-20 2011-04-06 シノプシイス インコーポレイテッド マスク欠陥のプリンタビリティ解析を提供するシステム及び方法
US7251033B1 (en) 2004-06-02 2007-07-31 Advanced Micro Devices, Inc. In-situ reticle contamination detection system at exposure wavelength
JP4928862B2 (ja) * 2006-08-04 2012-05-09 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
US7873204B2 (en) 2007-01-11 2011-01-18 Kla-Tencor Corporation Method for detecting lithographically significant defects on reticles
US7738093B2 (en) 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
KR20090074554A (ko) * 2008-01-02 2009-07-07 주식회사 하이닉스반도체 포토마스크의 결함 수정 방법
JP5229575B2 (ja) 2009-05-08 2013-07-03 ソニー株式会社 画像処理装置および方法、並びにプログラム
US20120331487A1 (en) 2010-03-01 2012-12-27 Nec Corporation Pattern matching device, pattern matching method, and pattern matching system
JP4988000B2 (ja) * 2010-03-17 2012-08-01 株式会社東芝 パターン検査装置及びパターン検査方法
JP2011247957A (ja) 2010-05-24 2011-12-08 Toshiba Corp パターン検査方法および半導体装置の製造方法
US8818072B2 (en) * 2010-08-25 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Rendered database image-to-inspection image optimization for inspection
JP6236216B2 (ja) * 2013-04-16 2017-11-22 株式会社ニューフレアテクノロジー 検査装置および検査方法
JP6364193B2 (ja) * 2014-01-23 2018-07-25 株式会社ニューフレアテクノロジー 焦点位置調整方法および検査方法
JP2015145922A (ja) * 2014-01-31 2015-08-13 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法
JP6307367B2 (ja) * 2014-06-26 2018-04-04 株式会社ニューフレアテクノロジー マスク検査装置、マスク評価方法及びマスク評価システム
JP6251647B2 (ja) * 2014-07-15 2017-12-20 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法
JP6373119B2 (ja) * 2014-08-08 2018-08-15 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004317975A (ja) 2003-04-18 2004-11-11 Toshiba Corp フォトマスク及びこのフォトマスクを用いた半導体装置の製造方法
US20080187842A1 (en) 2007-02-06 2008-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method and System For Wafer Inspection
JP2014515859A (ja) 2011-04-26 2014-07-03 ケーエルエー−テンカー コーポレイション データベース駆動型のセルツーセルレチクル検査
JP2014519598A (ja) 2011-04-26 2014-08-14 ケーエルエー−テンカー コーポレイション ハイブリッドレチクル検査のための方法及びシステム
JP2015510149A (ja) 2012-02-15 2015-04-02 ケーエルエー−テンカー コーポレイション レチクルの時間変化強度マップの生成
JP2016528497A (ja) 2013-07-29 2016-09-15 ケーエルエー−テンカー コーポレイション フォトマスク欠陥性における変化の監視

Also Published As

Publication number Publication date
WO2018156442A1 (en) 2018-08-30
JP2020510864A (ja) 2020-04-09
IL268480B (en) 2021-07-29
US10451563B2 (en) 2019-10-22
TWI760437B (zh) 2022-04-11
KR102329153B1 (ko) 2021-11-18
IL268480A (en) 2019-09-26
TW201841054A (zh) 2018-11-16
KR20190112177A (ko) 2019-10-02
US20180238816A1 (en) 2018-08-23

Similar Documents

Publication Publication Date Title
KR102329153B1 (ko) 두 개의 포토마스크의 비교에 의한 포토마스크의 검사
US10074036B2 (en) Critical dimension uniformity enhancement techniques and apparatus
JP6609568B2 (ja) 差分ダイおよび差分データベースを利用した検査
JP6184473B2 (ja) レチクルの劣化を検出するための反射マップおよび透過マップの使用
US9390494B2 (en) Delta die intensity map measurement
CN109659245B (zh) 监测光掩模缺陷率的改变
TW201708942A (zh) 用於預測晶圓級缺陷可印性之裝置及方法
US20130211736A1 (en) Time-varying intensity map generation for reticles
JP7698738B2 (ja) マルチダイマスクの欠陥検出

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210219

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20210219

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20210226

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210609

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210622

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210921

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211012

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220106

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220208

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220302

R150 Certificate of patent or registration of utility model

Ref document number: 7035069

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250