JP7028794B2 - 半導体レーザモジュール - Google Patents
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- JP7028794B2 JP7028794B2 JP2018557990A JP2018557990A JP7028794B2 JP 7028794 B2 JP7028794 B2 JP 7028794B2 JP 2018557990 A JP2018557990 A JP 2018557990A JP 2018557990 A JP2018557990 A JP 2018557990A JP 7028794 B2 JP7028794 B2 JP 7028794B2
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- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/509—Wavelength converting amplifier, e.g. signal gating with a second beam using gain saturation
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- G—PHYSICS
- G02—OPTICS
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- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0267—Integrated focusing lens
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Description
最初に、本発明の実施形態に係る半導体レーザモジュールの構成を想到するに至った余事実験について説明する。
図3は、実施形態に係る半導体レーザモジュールの概略構成を示す図である。
10 LDサブマウント
11 半導体レーザ素子
12 コリメートレンズ
20 SOAサブマウント
21 半導体光増幅器
22 集光レンズ
31 第1ビームスプリッタ
32 アイソレータ
41 LD用熱電素子
42 SOA用熱電素子
50 波長ロッカー
51 第2ビームスプリッタ
52 第2受光素子
53 エタロンフィルタ
54 第1受光素子
60 光ファイバ
61 結合光学系
Claims (6)
- 半導体レーザ素子と、
前記半導体レーザ素子から出射されたレーザ光が入射されて、入射されたレーザ光を増幅する半導体光増幅器と、
前記半導体レーザ素子から出射されたレーザ光の波長をモニタするために、該レーザ光の一部の強度を測定する第1受光素子と、
を備え、
前記半導体光増幅器は、前記第1受光素子の受光面における受光方向を前方としたとき、前記受光面よりも後方に配置されており、
前記第1受光素子の前記受光面は前記半導体光増幅器の側を向いておらず、
前記半導体レーザ素子と前記半導体光増幅器との間には、コリメートレンズと集光レンズとが配置され、前記半導体レーザ素子から出射されたレーザ光が、前記コリメートレンズと前記集光レンズとを介して、前記半導体光増幅器の導波路の入射端に空間結合し、
前記第1受光素子が強度を取得するレーザ光は、前記コリメートレンズと前記集光レンズとの間に配置された第1ビームスプリッタによって分岐されたものを、さらに第2ビームスプリッタで分岐されたものであり、
前記第2ビームスプリッタと前記第1受光素子との間には、透過率または反射率に波長依存性を有する波長依存光学素子が配置され、
前記第1受光素子は、前記波長依存光学素子を介して、前記半導体レーザ素子から出射されたレーザ光の強度を取得し、
前記第2ビームスプリッタで分岐されたレーザ光の強度を取得する第2受光素子をさらに備え、
前記第2受光素子は、前記第1受光素子よりも前記半導体光増幅器から離れた箇所に位置し、
前記第1受光素子と前記第2受光素子とが取得したレーザ光の強度の比に基いて、前記半導体レーザ素子から出射されたレーザ光の波長が測定される、
ことを特徴とする半導体レーザモジュール。 - 前記第1受光素子が強度を取得するレーザ光は、前記第1ビームスプリッタおよび前記第2ビームスプリッタで反射された後に前記第1受光素子に入射する、
ことを特徴とする請求項1に記載の半導体レーザモジュール。 - 前記波長依存光学素子は、エタロンフィルタである、
ことを特徴とする請求項1または2に記載の半導体レーザモジュール。 - 前記エタロンフィルタは、該エタロンフィルタへの入射光に対して、±7度の範囲内の傾きで配置されている、
ことを特徴とする請求項3に記載の半導体レーザモジュール。 - 前記半導体レーザ素子が出射するレーザ光の波長は、前記第1受光素子と前記第2受光素子とが取得したレーザ光の強度の比に基いて、フィードバック制御される、
ことを特徴とする請求項1から請求項4の何れか1項に記載の半導体レーザモジュール。 - 前記半導体レーザ素子の温度を制御する熱電素子をさらに備え、
前記熱電素子は、前記第1受光素子と前記第2受光素子とが取得したレーザ光の強度の比に基いて、フィードバック制御される、
ことを特徴とする請求項5に記載の半導体レーザモジュール。
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JP2016250075 | 2016-12-22 | ||
JP2016250075 | 2016-12-22 | ||
PCT/JP2017/045458 WO2018117076A1 (ja) | 2016-12-22 | 2017-12-19 | 半導体レーザモジュール |
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JPWO2018117076A1 JPWO2018117076A1 (ja) | 2019-10-24 |
JP7028794B2 true JP7028794B2 (ja) | 2022-03-02 |
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US (1) | US11552455B2 (ja) |
JP (1) | JP7028794B2 (ja) |
CN (1) | CN110088997B (ja) |
WO (1) | WO2018117076A1 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001251013A (ja) | 2000-03-06 | 2001-09-14 | Fujitsu Ltd | 波長可変安定化レーザ |
WO2013180291A1 (ja) | 2012-05-31 | 2013-12-05 | 古河電気工業株式会社 | 半導体レーザモジュール |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US6597712B2 (en) * | 2001-02-26 | 2003-07-22 | Hitachi, Ltd. | Laser diode module |
US20030039277A1 (en) * | 2001-05-15 | 2003-02-27 | Hideyuki Nasu | Semiconductor laser apparatus and semiconductor laser module |
US7180653B2 (en) * | 2003-03-12 | 2007-02-20 | Ahura Corporation | High spectral fidelity laser source with low FM-to-AM conversion and narrowband tunability |
JP2006216695A (ja) | 2005-02-02 | 2006-08-17 | Furukawa Electric Co Ltd:The | 半導体レーザモジュール |
JP5008831B2 (ja) | 2005-02-03 | 2012-08-22 | 住友電工デバイス・イノベーション株式会社 | レーザ装置、レーザ装置の制御装置、レーザ装置の制御方法、レーザ装置の波長切換方法およびレーザ装置の制御データ |
JP4253027B2 (ja) * | 2006-11-21 | 2009-04-08 | 古河電気工業株式会社 | 光モジュール |
JP4892467B2 (ja) * | 2007-12-11 | 2012-03-07 | 日本オプネクスト株式会社 | レーザ装置およびその制御方法 |
EP2413439A4 (en) * | 2009-03-26 | 2018-01-24 | Furukawa Electric Co., Ltd. | Semiconductor laser module |
US9054480B2 (en) | 2009-08-06 | 2015-06-09 | Neophotonics Corporation | Small packaged tunable traveling wave laser assembly |
JP2011238698A (ja) * | 2010-05-07 | 2011-11-24 | Furukawa Electric Co Ltd:The | レーザモジュール |
CN103557936B (zh) * | 2013-10-31 | 2015-10-07 | 中国科学院半导体研究所 | 激光功率监测组件及应用其的激光发射模块、光放大器 |
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- 2017-12-19 CN CN201780078795.XA patent/CN110088997B/zh active Active
- 2017-12-19 JP JP2018557990A patent/JP7028794B2/ja active Active
- 2017-12-19 WO PCT/JP2017/045458 patent/WO2018117076A1/ja active Application Filing
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- 2019-06-11 US US16/437,465 patent/US11552455B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001251013A (ja) | 2000-03-06 | 2001-09-14 | Fujitsu Ltd | 波長可変安定化レーザ |
WO2013180291A1 (ja) | 2012-05-31 | 2013-12-05 | 古河電気工業株式会社 | 半導体レーザモジュール |
Also Published As
Publication number | Publication date |
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CN110088997B (zh) | 2021-06-08 |
US11552455B2 (en) | 2023-01-10 |
WO2018117076A1 (ja) | 2018-06-28 |
CN110088997A (zh) | 2019-08-02 |
JPWO2018117076A1 (ja) | 2019-10-24 |
US20190296524A1 (en) | 2019-09-26 |
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