JP7026140B2 - 半導体ウエハ上のパターン内の高低差の測定 - Google Patents

半導体ウエハ上のパターン内の高低差の測定 Download PDF

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JP7026140B2
JP7026140B2 JP2019563887A JP2019563887A JP7026140B2 JP 7026140 B2 JP7026140 B2 JP 7026140B2 JP 2019563887 A JP2019563887 A JP 2019563887A JP 2019563887 A JP2019563887 A JP 2019563887A JP 7026140 B2 JP7026140 B2 JP 7026140B2
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trench
height difference
core
gap
physical parameters
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JP2020521325A (ja
JP2020521325A5 (enExample
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イシャイ シュワルツバンド
ヤン アヴニエル
セルゲイ クリスト
モール バラム
シモン レヴィ
ドロン ギルモンスキー
ロマン クリス
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アプライド マテリアルズ イスラエル リミテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • G01B15/025—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness by measuring absorption
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q90/00—Scanning-probe techniques or apparatus not otherwise provided for
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Analysis (AREA)
JP2019563887A 2017-05-18 2018-05-18 半導体ウエハ上のパターン内の高低差の測定 Active JP7026140B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762508312P 2017-05-18 2017-05-18
US62/508,312 2017-05-18
US15/982,918 US10748272B2 (en) 2017-05-18 2018-05-17 Measuring height difference in patterns on semiconductor wafers
US15/982,918 2018-05-17
PCT/US2018/033480 WO2018213758A2 (en) 2017-05-18 2018-05-18 Measuring height difference in patterns on semiconductor wafers

Publications (3)

Publication Number Publication Date
JP2020521325A JP2020521325A (ja) 2020-07-16
JP2020521325A5 JP2020521325A5 (enExample) 2021-07-26
JP7026140B2 true JP7026140B2 (ja) 2022-02-25

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JP2019563887A Active JP7026140B2 (ja) 2017-05-18 2018-05-18 半導体ウエハ上のパターン内の高低差の測定

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US (2) US10748272B2 (enExample)
JP (1) JP7026140B2 (enExample)
KR (1) KR102341667B1 (enExample)
CN (2) CN110622289B (enExample)
TW (1) TWI757489B (enExample)
WO (1) WO2018213758A2 (enExample)

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KR102702714B1 (ko) * 2019-05-21 2024-09-05 어플라이드 머티어리얼스, 인코포레이티드 강화된 단면 특징 측정 방법론
CN112639396B (zh) * 2019-08-07 2022-11-11 株式会社日立高新技术 尺寸测量装置、尺寸测量方法以及半导体制造系统
US12446088B2 (en) * 2020-05-13 2025-10-14 Qualcomm Incorporated Tune away configuration for a user equipment with multiple subscriptions
CN111816580A (zh) * 2020-07-16 2020-10-23 宁波江丰电子材料股份有限公司 一种晶圆保持环花纹凸台宽度的测量方法及测量系统
EP4099091B1 (en) 2021-06-02 2024-04-10 IMEC vzw Pattern height metrology using an e-beam system
CN113594057B (zh) * 2021-08-05 2024-02-02 上海天岳半导体材料有限公司 一种晶片的原子台阶的宽度计算装置、方法、设备及介质
US12175656B2 (en) * 2022-02-23 2024-12-24 Applied Materials Israel Ltd. Gray level ratio inspection
US11662324B1 (en) * 2022-03-18 2023-05-30 Applied Materials Israel Ltd. Three-dimensional surface metrology of wafers
WO2024178198A1 (en) * 2023-02-24 2024-08-29 Fractilia, Llc Method of dispositioning and control of a semiconductor manufacturing process

Citations (4)

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JP2003031631A (ja) 2001-07-13 2003-01-31 Mitsubishi Electric Corp パターン側面認識方法および欠陥検出分類方法
WO2011013342A1 (ja) 2009-07-27 2011-02-03 株式会社日立ハイテクノロジーズ パターン評価方法、その装置、及び電子線装置
JP2012519391A (ja) 2009-03-02 2012-08-23 アプライド マテリアルズ イスラエル リミテッド 類似構造要素を分類するｃｄ計測システム及び方法
WO2014175150A1 (ja) 2013-04-22 2014-10-30 株式会社日立ハイテクノロジーズ 試料観察装置

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JPH0778267A (ja) * 1993-07-09 1995-03-20 Silicon Graphics Inc 陰影を表示する方法及びコンピュータ制御表示システム
JP2006065368A (ja) * 2004-08-24 2006-03-09 Sony Corp 画像表示装置，画像表示方法，およびコンピュータプログラム
JP2007218711A (ja) * 2006-02-16 2007-08-30 Hitachi High-Technologies Corp 電子顕微鏡装置を用いた計測対象パターンの計測方法
EP2362765B1 (en) * 2008-12-01 2020-04-08 The Procter and Gamble Company Perfume systems
JP5500974B2 (ja) * 2009-12-25 2014-05-21 株式会社日立ハイテクノロジーズ パターン測定装置
KR101725299B1 (ko) * 2010-10-26 2017-04-10 마퍼 리쏘그라피 아이피 비.브이. 변조 디바이스 및 이를 사용하는 하전 입자 멀티-빔렛 리소그래피 시스템
DE102011079382B4 (de) * 2011-07-19 2020-11-12 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske
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JP2014130077A (ja) * 2012-12-28 2014-07-10 Hitachi High-Technologies Corp パターン形状評価方法、半導体装置の製造方法及びパターン形状評価装置
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US9484188B2 (en) * 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031631A (ja) 2001-07-13 2003-01-31 Mitsubishi Electric Corp パターン側面認識方法および欠陥検出分類方法
JP2012519391A (ja) 2009-03-02 2012-08-23 アプライド マテリアルズ イスラエル リミテッド 類似構造要素を分類するｃｄ計測システム及び方法
WO2011013342A1 (ja) 2009-07-27 2011-02-03 株式会社日立ハイテクノロジーズ パターン評価方法、その装置、及び電子線装置
WO2014175150A1 (ja) 2013-04-22 2014-10-30 株式会社日立ハイテクノロジーズ 試料観察装置

Also Published As

Publication number Publication date
KR102341667B1 (ko) 2021-12-22
US20180336675A1 (en) 2018-11-22
US11301983B2 (en) 2022-04-12
CN110622289A (zh) 2019-12-27
KR20190143456A (ko) 2019-12-30
JP2020521325A (ja) 2020-07-16
TWI757489B (zh) 2022-03-11
US20200380668A1 (en) 2020-12-03
CN115060207B (zh) 2023-07-21
CN115060207A (zh) 2022-09-16
US10748272B2 (en) 2020-08-18
CN110622289B (zh) 2022-05-24
WO2018213758A3 (en) 2018-12-27
TW201909113A (zh) 2019-03-01
WO2018213758A2 (en) 2018-11-22

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