KR102341667B1 - 반도체 웨이퍼들 상의 패턴들의 높이 차이의 측정 - Google Patents

반도체 웨이퍼들 상의 패턴들의 높이 차이의 측정 Download PDF

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KR102341667B1
KR102341667B1 KR1020197037458A KR20197037458A KR102341667B1 KR 102341667 B1 KR102341667 B1 KR 102341667B1 KR 1020197037458 A KR1020197037458 A KR 1020197037458A KR 20197037458 A KR20197037458 A KR 20197037458A KR 102341667 B1 KR102341667 B1 KR 102341667B1
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trench
gap
core
difference
height difference
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KR20190143456A (ko
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이샤이 슈바쯔반드
얀 아브니엘
서게이 크리스토
모어 바람
쉬몬 레비
도론 기르몬스키
로만 크리스
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어플라이드 머티리얼즈 이스라엘 리미티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • G01B15/025—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness by measuring absorption
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q90/00—Scanning-probe techniques or apparatus not otherwise provided for
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Analysis (AREA)
KR1020197037458A 2017-05-18 2018-05-18 반도체 웨이퍼들 상의 패턴들의 높이 차이의 측정 Active KR102341667B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762508312P 2017-05-18 2017-05-18
US62/508,312 2017-05-18
US15/982,918 US10748272B2 (en) 2017-05-18 2018-05-17 Measuring height difference in patterns on semiconductor wafers
US15/982,918 2018-05-17
PCT/US2018/033480 WO2018213758A2 (en) 2017-05-18 2018-05-18 Measuring height difference in patterns on semiconductor wafers

Publications (2)

Publication Number Publication Date
KR20190143456A KR20190143456A (ko) 2019-12-30
KR102341667B1 true KR102341667B1 (ko) 2021-12-22

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KR1020197037458A Active KR102341667B1 (ko) 2017-05-18 2018-05-18 반도체 웨이퍼들 상의 패턴들의 높이 차이의 측정

Country Status (6)

Country Link
US (2) US10748272B2 (enExample)
JP (1) JP7026140B2 (enExample)
KR (1) KR102341667B1 (enExample)
CN (2) CN115060207B (enExample)
TW (1) TWI757489B (enExample)
WO (1) WO2018213758A2 (enExample)

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CN113874679B (zh) * 2019-05-21 2024-06-18 应用材料公司 增强的截面特征测量方法
WO2021024402A1 (ja) * 2019-08-07 2021-02-11 株式会社日立ハイテク 寸法計測装置、寸法計測方法及び半導体製造システム
WO2021232037A1 (en) * 2020-05-13 2021-11-18 Qualcomm Incorporated Tune away configuration for a user equipment with multiple subscriptions
CN111816580A (zh) * 2020-07-16 2020-10-23 宁波江丰电子材料股份有限公司 一种晶圆保持环花纹凸台宽度的测量方法及测量系统
EP4099091B1 (en) 2021-06-02 2024-04-10 IMEC vzw Pattern height metrology using an e-beam system
CN113594057B (zh) * 2021-08-05 2024-02-02 上海天岳半导体材料有限公司 一种晶片的原子台阶的宽度计算装置、方法、设备及介质
US12175656B2 (en) * 2022-02-23 2024-12-24 Applied Materials Israel Ltd. Gray level ratio inspection
US11662324B1 (en) * 2022-03-18 2023-05-30 Applied Materials Israel Ltd. Three-dimensional surface metrology of wafers
WO2024178198A1 (en) * 2023-02-24 2024-08-29 Fractilia, Llc Method of dispositioning and control of a semiconductor manufacturing process

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US20120076393A1 (en) 2009-03-02 2012-03-29 Yan Ivanchenko Cd metrology system and method of classifying similar structural elements
US20130012422A1 (en) 2008-12-01 2013-01-10 Johan Smets Perfume systems
US20160071688A1 (en) 2013-04-22 2016-03-10 Hitachi High-Technologies Corporation Sample Observation Device

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JP2003031631A (ja) 2001-07-13 2003-01-31 Mitsubishi Electric Corp パターン側面認識方法および欠陥検出分類方法
JP2006065368A (ja) * 2004-08-24 2006-03-09 Sony Corp 画像表示装置，画像表示方法，およびコンピュータプログラム
JP2007218711A (ja) * 2006-02-16 2007-08-30 Hitachi High-Technologies Corp 電子顕微鏡装置を用いた計測対象パターンの計測方法
US8816277B2 (en) 2009-07-27 2014-08-26 Hitachi High-Technologies Corporation Pattern evaluation method, device therefor, and electron beam device
JP5500974B2 (ja) * 2009-12-25 2014-05-21 株式会社日立ハイテクノロジーズ パターン測定装置
US8921758B2 (en) * 2010-10-26 2014-12-30 Mapper Lithography Ip B.V. Modulation device and charged particle multi-beamlet lithography system using the same
DE102011079382B4 (de) * 2011-07-19 2020-11-12 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske
US8604427B2 (en) 2012-02-02 2013-12-10 Applied Materials Israel, Ltd. Three-dimensional mapping using scanning electron microscope images
US8843875B2 (en) * 2012-05-08 2014-09-23 Kla-Tencor Corporation Measurement model optimization based on parameter variations across a wafer
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JP2014130077A (ja) * 2012-12-28 2014-07-10 Hitachi High-Technologies Corp パターン形状評価方法、半導体装置の製造方法及びパターン形状評価装置
US9679371B2 (en) * 2013-06-24 2017-06-13 Hitachi High-Technologies Corporation Pattern shape evaluation device and method
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KR20150085956A (ko) 2014-01-17 2015-07-27 삼성전자주식회사 반도체 소자의 계측 방법, 반도체 계측 시스템, 및 이들을 이용한 반도체 소자의 제조방법
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Publication number Priority date Publication date Assignee Title
US20130012422A1 (en) 2008-12-01 2013-01-10 Johan Smets Perfume systems
US20120076393A1 (en) 2009-03-02 2012-03-29 Yan Ivanchenko Cd metrology system and method of classifying similar structural elements
US20160071688A1 (en) 2013-04-22 2016-03-10 Hitachi High-Technologies Corporation Sample Observation Device

Also Published As

Publication number Publication date
US10748272B2 (en) 2020-08-18
CN110622289B (zh) 2022-05-24
US20180336675A1 (en) 2018-11-22
JP2020521325A (ja) 2020-07-16
CN115060207A (zh) 2022-09-16
WO2018213758A2 (en) 2018-11-22
WO2018213758A3 (en) 2018-12-27
KR20190143456A (ko) 2019-12-30
CN115060207B (zh) 2023-07-21
US11301983B2 (en) 2022-04-12
CN110622289A (zh) 2019-12-27
JP7026140B2 (ja) 2022-02-25
TW201909113A (zh) 2019-03-01
US20200380668A1 (en) 2020-12-03
TWI757489B (zh) 2022-03-11

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