TWI757489B - 用於量測半導體晶圓上的圖案中的高度差之方法及系統 - Google Patents

用於量測半導體晶圓上的圖案中的高度差之方法及系統 Download PDF

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TWI757489B
TWI757489B TW107117023A TW107117023A TWI757489B TW I757489 B TWI757489 B TW I757489B TW 107117023 A TW107117023 A TW 107117023A TW 107117023 A TW107117023 A TW 107117023A TW I757489 B TWI757489 B TW I757489B
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Taiwan
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trench
core
height difference
gap
model
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TW107117023A
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TW201909113A (zh
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伊夏 薛瓦爾茲班德
洋 艾維尼爾
歇爾蓋 赫里斯托
摩爾 巴拉姆
西蒙 雷比
多倫 吉爾莫斯基
羅曼 克里斯
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以色列商應用材料以色列公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • G01B15/025—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness by measuring absorption
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q90/00—Scanning-probe techniques or apparatus not otherwise provided for
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Analysis (AREA)
TW107117023A 2017-05-18 2018-05-18 用於量測半導體晶圓上的圖案中的高度差之方法及系統 TWI757489B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762508312P 2017-05-18 2017-05-18
US62/508,312 2017-05-18
US15/982,918 US10748272B2 (en) 2017-05-18 2018-05-17 Measuring height difference in patterns on semiconductor wafers
US15/982,918 2018-05-17

Publications (2)

Publication Number Publication Date
TW201909113A TW201909113A (zh) 2019-03-01
TWI757489B true TWI757489B (zh) 2022-03-11

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TW107117023A TWI757489B (zh) 2017-05-18 2018-05-18 用於量測半導體晶圓上的圖案中的高度差之方法及系統

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Country Link
US (2) US10748272B2 (enExample)
JP (1) JP7026140B2 (enExample)
KR (1) KR102341667B1 (enExample)
CN (2) CN110622289B (enExample)
TW (1) TWI757489B (enExample)
WO (1) WO2018213758A2 (enExample)

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CN112639396B (zh) * 2019-08-07 2022-11-11 株式会社日立高新技术 尺寸测量装置、尺寸测量方法以及半导体制造系统
US12446088B2 (en) * 2020-05-13 2025-10-14 Qualcomm Incorporated Tune away configuration for a user equipment with multiple subscriptions
CN111816580A (zh) * 2020-07-16 2020-10-23 宁波江丰电子材料股份有限公司 一种晶圆保持环花纹凸台宽度的测量方法及测量系统
EP4099091B1 (en) 2021-06-02 2024-04-10 IMEC vzw Pattern height metrology using an e-beam system
CN113594057B (zh) * 2021-08-05 2024-02-02 上海天岳半导体材料有限公司 一种晶片的原子台阶的宽度计算装置、方法、设备及介质
US12175656B2 (en) * 2022-02-23 2024-12-24 Applied Materials Israel Ltd. Gray level ratio inspection
US11662324B1 (en) * 2022-03-18 2023-05-30 Applied Materials Israel Ltd. Three-dimensional surface metrology of wafers
WO2024178198A1 (en) * 2023-02-24 2024-08-29 Fractilia, Llc Method of dispositioning and control of a semiconductor manufacturing process

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US20070187595A1 (en) * 2006-02-16 2007-08-16 Maki Tanaka Method for measuring a pattern dimension using a scanning electron microscope
US20120267528A1 (en) * 2009-12-25 2012-10-25 Hitachi High-Technologies Corporation Pattern Measuring Apparatus and Computer Program
US20140165236A1 (en) * 2011-07-19 2014-06-12 Carl Zeiss Sms Gmbh Method and apparatus for analyzing and for removing a defect of an euv photomask
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US20070187595A1 (en) * 2006-02-16 2007-08-16 Maki Tanaka Method for measuring a pattern dimension using a scanning electron microscope
US20120267528A1 (en) * 2009-12-25 2012-10-25 Hitachi High-Technologies Corporation Pattern Measuring Apparatus and Computer Program
TWI550679B (zh) * 2010-10-26 2016-09-21 瑪波微影Ｉｐ公司 調整裝置和使用其之帶電粒子多重小射束微影系統
US20140165236A1 (en) * 2011-07-19 2014-06-12 Carl Zeiss Sms Gmbh Method and apparatus for analyzing and for removing a defect of an euv photomask
TW201643554A (zh) * 2015-03-11 2016-12-16 瑪波微影Ｉｐ公司 在多射束微影中的個別射束圖樣放置驗證

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Publication number Publication date
KR102341667B1 (ko) 2021-12-22
US20180336675A1 (en) 2018-11-22
US11301983B2 (en) 2022-04-12
CN110622289A (zh) 2019-12-27
JP7026140B2 (ja) 2022-02-25
KR20190143456A (ko) 2019-12-30
JP2020521325A (ja) 2020-07-16
US20200380668A1 (en) 2020-12-03
CN115060207B (zh) 2023-07-21
CN115060207A (zh) 2022-09-16
US10748272B2 (en) 2020-08-18
CN110622289B (zh) 2022-05-24
WO2018213758A3 (en) 2018-12-27
TW201909113A (zh) 2019-03-01
WO2018213758A2 (en) 2018-11-22

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