CN110622289B - 测量半导体晶片上的图案中的高度差 - Google Patents

测量半导体晶片上的图案中的高度差 Download PDF

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Publication number
CN110622289B
CN110622289B CN201880032678.4A CN201880032678A CN110622289B CN 110622289 B CN110622289 B CN 110622289B CN 201880032678 A CN201880032678 A CN 201880032678A CN 110622289 B CN110622289 B CN 110622289B
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trench
core
height difference
model
gap
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Chinese (zh)
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CN110622289A (zh
Inventor
伊谢·施瓦茨班德
严·阿夫尼尔
谢尔盖·克里斯托
莫尔·巴拉姆
希蒙·利维
多伦·吉蒙斯基
罗马·克里斯
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Applied Materials Israel Ltd
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Applied Materials Israel Ltd
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • G01B15/025—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness by measuring absorption
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q90/00—Scanning-probe techniques or apparatus not otherwise provided for
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Analysis (AREA)
CN201880032678.4A 2017-05-18 2018-05-18 测量半导体晶片上的图案中的高度差 Active CN110622289B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210570423.1A CN115060207B (zh) 2017-05-18 2018-05-18 测量半导体晶片上的图案中的高度差

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762508312P 2017-05-18 2017-05-18
US62/508,312 2017-05-18
US15/982,918 US10748272B2 (en) 2017-05-18 2018-05-17 Measuring height difference in patterns on semiconductor wafers
US15/982,918 2018-05-17
PCT/US2018/033480 WO2018213758A2 (en) 2017-05-18 2018-05-18 Measuring height difference in patterns on semiconductor wafers

Related Child Applications (1)

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CN202210570423.1A Division CN115060207B (zh) 2017-05-18 2018-05-18 测量半导体晶片上的图案中的高度差

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CN110622289A CN110622289A (zh) 2019-12-27
CN110622289B true CN110622289B (zh) 2022-05-24

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CN202210570423.1A Active CN115060207B (zh) 2017-05-18 2018-05-18 测量半导体晶片上的图案中的高度差

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US (2) US10748272B2 (enExample)
JP (1) JP7026140B2 (enExample)
KR (1) KR102341667B1 (enExample)
CN (2) CN110622289B (enExample)
TW (1) TWI757489B (enExample)
WO (1) WO2018213758A2 (enExample)

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CN112639396B (zh) * 2019-08-07 2022-11-11 株式会社日立高新技术 尺寸测量装置、尺寸测量方法以及半导体制造系统
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CN113594057B (zh) * 2021-08-05 2024-02-02 上海天岳半导体材料有限公司 一种晶片的原子台阶的宽度计算装置、方法、设备及介质
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WO2024178198A1 (en) * 2023-02-24 2024-08-29 Fractilia, Llc Method of dispositioning and control of a semiconductor manufacturing process

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Also Published As

Publication number Publication date
KR102341667B1 (ko) 2021-12-22
US20180336675A1 (en) 2018-11-22
US11301983B2 (en) 2022-04-12
CN110622289A (zh) 2019-12-27
JP7026140B2 (ja) 2022-02-25
KR20190143456A (ko) 2019-12-30
JP2020521325A (ja) 2020-07-16
TWI757489B (zh) 2022-03-11
US20200380668A1 (en) 2020-12-03
CN115060207B (zh) 2023-07-21
CN115060207A (zh) 2022-09-16
US10748272B2 (en) 2020-08-18
WO2018213758A3 (en) 2018-12-27
TW201909113A (zh) 2019-03-01
WO2018213758A2 (en) 2018-11-22

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