JP7026043B2 - シリコンウェーハ粗研磨用組成物の製造方法、シリコンウェーハ粗研磨用組成物セット、およびシリコンウェーハの研磨方法 - Google Patents

シリコンウェーハ粗研磨用組成物の製造方法、シリコンウェーハ粗研磨用組成物セット、およびシリコンウェーハの研磨方法 Download PDF

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Publication number
JP7026043B2
JP7026043B2 JP2018531831A JP2018531831A JP7026043B2 JP 7026043 B2 JP7026043 B2 JP 7026043B2 JP 2018531831 A JP2018531831 A JP 2018531831A JP 2018531831 A JP2018531831 A JP 2018531831A JP 7026043 B2 JP7026043 B2 JP 7026043B2
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Japan
Prior art keywords
liquid
polishing
water
soluble polymer
weight
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Japanese (ja)
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JPWO2018025656A1 (ja
Inventor
雄彦 村瀬
誠 田畑
恵 谷口
公亮 土屋
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Fujimi Inc
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Fujimi Inc
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2018531831A 2016-08-02 2017-07-21 シリコンウェーハ粗研磨用組成物の製造方法、シリコンウェーハ粗研磨用組成物セット、およびシリコンウェーハの研磨方法 Active JP7026043B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016152325 2016-08-02
JP2016152325 2016-08-02
PCT/JP2017/026406 WO2018025656A1 (ja) 2016-08-02 2017-07-21 シリコンウェーハ粗研磨用組成物の製造方法、シリコンウェーハ粗研磨用組成物セット、およびシリコンウェーハの研磨方法

Publications (2)

Publication Number Publication Date
JPWO2018025656A1 JPWO2018025656A1 (ja) 2019-06-20
JP7026043B2 true JP7026043B2 (ja) 2022-02-25

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JP2018531831A Active JP7026043B2 (ja) 2016-08-02 2017-07-21 シリコンウェーハ粗研磨用組成物の製造方法、シリコンウェーハ粗研磨用組成物セット、およびシリコンウェーハの研磨方法

Country Status (3)

Country Link
JP (1) JP7026043B2 (zh)
TW (1) TW201815906A (zh)
WO (1) WO2018025656A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022154016A1 (zh) * 2021-01-18 2022-07-21
EP4279561A1 (en) * 2021-01-18 2023-11-22 Fujimi Incorporated Polishing composition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014041978A (ja) 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法
WO2015098777A1 (ja) 2013-12-25 2015-07-02 ニッタ・ハース株式会社 半導体基板用濡れ剤及び研磨用組成物
JP2016135882A (ja) 2013-03-19 2016-07-28 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨用組成物調製用キット

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014041978A (ja) 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法
JP2016135882A (ja) 2013-03-19 2016-07-28 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨用組成物調製用キット
WO2015098777A1 (ja) 2013-12-25 2015-07-02 ニッタ・ハース株式会社 半導体基板用濡れ剤及び研磨用組成物

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JPWO2018025656A1 (ja) 2019-06-20
TW201815906A (zh) 2018-05-01
WO2018025656A1 (ja) 2018-02-08

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