JP7007052B2 - Wafer processing method - Google Patents

Wafer processing method Download PDF

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JP7007052B2
JP7007052B2 JP2017178724A JP2017178724A JP7007052B2 JP 7007052 B2 JP7007052 B2 JP 7007052B2 JP 2017178724 A JP2017178724 A JP 2017178724A JP 2017178724 A JP2017178724 A JP 2017178724A JP 7007052 B2 JP7007052 B2 JP 7007052B2
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wafer
encapsulant
sealing material
alignment
modified layer
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JP2019054188A (en
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克彦 鈴木
祐人 伴
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Disco Corp
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Disco Corp
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Priority to JP2017178724A priority Critical patent/JP7007052B2/en
Priority to KR1020180104754A priority patent/KR102607962B1/en
Priority to SG10201807863RA priority patent/SG10201807863RA/en
Priority to CN201811066921.2A priority patent/CN109514744B/en
Priority to TW107132557A priority patent/TWI769311B/en
Priority to DE102018215817.7A priority patent/DE102018215817A1/en
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Description

本発明は、WL-CSPウェーハの加工方法に関する。 The present invention relates to a method for processing a WL-CSP wafer.

WL-CSP（Wafer-level Chip Size Package）ウェーハとは、ウェーハの状態で再配線層や電極（金属ポスト）を形成後、表面側を樹脂封止し、切削ブレード等で各パッケージに分割する技術であり、ウェーハを個片化したパッケージの大きさが半導体デバイスチップの大きさになるため、小型化及び軽量化の観点からも広く採用されている。 WL-CSP (Wafer-level Chip Size Package) wafer is a technology that forms a rewiring layer and electrodes (metal posts) in the state of the wafer, seals the surface side with resin, and divides it into each package with a cutting blade or the like. Therefore, since the size of the package in which the wafer is separated is the size of the semiconductor device chip, it is widely adopted from the viewpoint of miniaturization and weight reduction.

WL-CSPウェーハの製造プロセスでは、複数のデバイスが形成されたデバイスウェーハのデバイス面側に再配線層を形成し、更に再配線層を介してデバイス中の電極に接続する金属ポストを形成した後、金属ポスト及びデバイスを樹脂で封止する。 In the WL-CSP wafer manufacturing process, a rewiring layer is formed on the device surface side of the device wafer in which multiple devices are formed, and then a metal post connected to an electrode in the device is formed via the rewiring layer. , Metal posts and devices are sealed with resin.

次いで、封止材を薄化するとともに金属ポストを封止材表面に露出させた後、金属ポストの端面に電極バンプと呼ばれる外部端子を形成する。その後、切削装置等でWL-CSPウェーハを切削して個々のCSPへと分割する。 Next, after the encapsulant is thinned and the metal post is exposed on the surface of the encapsulant, an external terminal called an electrode bump is formed on the end surface of the metal post. After that, the WL-CSP wafer is cut with a cutting device or the like and divided into individual CSPs.

半導体デバイスを衝撃や湿気等から保護するために、封止材で封止することが重要である。通常、封止材として、エポキシ樹脂中にSiCからなるフィラーを混入した封止材を使用することで、封止材の熱膨張率を半導体デバイスチップの熱膨張率に近づけ、熱膨張率の差によって生じる加熱時のパッケージの破損を防止している。 It is important to seal the semiconductor device with a sealing material in order to protect it from impact, moisture, and the like. Normally, by using a sealing material in which a filler made of SiC is mixed in an epoxy resin, the thermal expansion rate of the sealing material is brought close to the thermal expansion rate of the semiconductor device chip, and the difference in the thermal expansion rate is obtained. Prevents damage to the package during heating caused by.

WL-CSPウェーハは、一般的に切削装置を使用して個々のCSPに分割される。この場合、WL-CSPウェーハは、分割予定ラインを検出するために利用するデバイスが樹脂で覆われているため、表面側からデバイスのターゲットパターンを検出することができない。 WL-CSP wafers are typically split into individual CSPs using cutting equipment. In this case, in the WL-CSP wafer, the device used for detecting the planned division line is covered with resin, so that the target pattern of the device cannot be detected from the surface side.

その為、WL-CSPウェーハの樹脂上に形成された電極バンプをターゲットにして分割予定ラインを割り出したり、樹脂の上面にアライメント用のターゲットを印刷する等して分割予定ラインと切削ブレードとのアライメントをおこなっていた。 Therefore, alignment between the planned division line and the cutting blade is performed by targeting the electrode bumps formed on the resin of the WL-CSP wafer to determine the planned division line, or printing the alignment target on the upper surface of the resin. Was done.

しかし、電極バンプや樹脂上に印刷されたターゲットはデバイスのように高精度には形成されていないため、アライメント用のターゲットとしては精度が低いという問題がある。従って、電極バンプや印刷されたターゲットに基づいて分割予定ラインを割り出した場合、分割予定ラインから外れてデバイス部分を切削してしまうという恐れがあった。 However, since the electrode bumps and the target printed on the resin are not formed with high accuracy like the device, there is a problem that the accuracy is low as a target for alignment. Therefore, when the planned division line is determined based on the electrode bumps and the printed target, there is a risk that the device portion may be cut off the planned division line.

そこで、例えば特開２０１３－７４０２１号公報では、ウェーハの外周で露出するデバイスウェーハのパターンを基にアライメントする方法が提案されている。 Therefore, for example, Japanese Patent Application Laid-Open No. 2013-74021 proposes a method of alignment based on a pattern of a device wafer exposed on the outer periphery of the wafer.

特開２０１３－０７４０２１号公報Japanese Unexamined Patent Publication No. 2013-074021 特開２０１６－０１５４３８号公報Japanese Unexamined Patent Publication No. 2016-015438

しかし、一般にウェーハの外周ではデバイス精度が悪く、ウェーハの外周で露出するパターンを基にアライメントを実施すると、分割予定ラインとは外れた位置でウェーハを分割してしまう恐れがある上、ウェーハによってはデバイスウェーハのパターンが外周で露出していないものもある。 However, in general, the device accuracy is poor on the outer circumference of the wafer, and if alignment is performed based on the pattern exposed on the outer circumference of the wafer, the wafer may be divided at a position deviating from the planned division line, and some wafers may be divided. In some cases, the pattern of the device wafer is not exposed on the outer circumference.

本発明はこのような点に鑑みてなされたものであり、その目的とするところは、ウェーハ表面に被覆されたカーボンブラックを含む封止材を通してアライメント工程を実施可能なウェーハの加工方法を提供することである。 The present invention has been made in view of these points, and an object of the present invention is to provide a method for processing a wafer in which an alignment step can be carried out through a sealing material containing carbon black coated on the wafer surface. That is.

本発明によると、表面に交差して形成された複数の分割予定ラインによって区画されたチップ領域にそれぞれデバイスが形成されたデバイスウェーハの表面が封止材で封止され、該封止材の該チップ領域にそれぞれ複数のバンプが形成されたウェーハの加工方法であって、該ウェーハの表面側から可視光撮像手段によって該封止材を透過して該デバイスウェーハの表面側を撮像してアライメントマークを検出し、該アライメントマークに基づいてレーザー加工すべき該分割予定ラインを検出するアライメント工程と、該アライメント工程を実施した後、該デバイスウェーハ及び該封止材に対して透過性を有する波長のレーザービームの集光点を該デバイスウェーハ又は該封止材の内部に位置付けて、該ウェーハの表面側から該分割予定ラインに沿ってレーザービームを照射して、該デバイスウェーハ及び該封止材の内部に改質層を形成する改質層形成工程と、該改質層形成工程を実施した後、該デバイスウェーハ及び該封止材に外力を付与して該改質層を分割起点として表面が該封止材によって封止された個々のデバイスチップに分割する分割工程と、を備え、該アライメント工程は、該封止材を除去することなく、該可視光撮像手段によって撮像する領域に斜光手段によって斜めから光を照射しながら実施することを特徴とするウェーハの加工方法が提供される。 According to the present invention, the surface of a device wafer in which a device is formed in a chip region partitioned by a plurality of scheduled division lines formed intersecting the surface is sealed with a sealing material, and the sealing material is sealed. This is a method for processing a wafer in which a plurality of bumps are formed in each chip region. An alignment mark is obtained by transmitting an image from the surface side of the wafer through the encapsulant by a visible light imaging means and imaging the surface side of the device wafer. And the alignment step of detecting the split line to be laser-processed based on the alignment mark, and the wavelength having transparency to the device wafer and the encapsulant after the alignment step is performed. A focusing point of the laser beam is positioned inside the device wafer or the encapsulant, and the laser beam is irradiated from the surface side of the wafer along the planned division line to form the device wafer and the encapsulant. After performing the modified layer forming step of forming the modified layer inside and the modified layer forming step, an external force is applied to the device wafer and the encapsulant to make the surface of the modified layer as a split starting point. The alignment step comprises a splitting step of dividing into individual device chips sealed by the encapsulant, the alignment step providing oblique light means to the region imaged by the visible light imaging means without removing the encapsulant. Provided is a method for processing a wafer, which is characterized by irradiating light from an angle.

本発明のウェーハの加工方法によると、斜光手段で斜めから光を照射しながら可視光撮像手段によって封止材を透過してデバイスウェーハに形成されたアライメントマークを検出し、アライメントマークに基づいてアライメントを実施できるようにしたので、従来のようにウェーハの表面の外周部分の封止材を除去することなく簡単にアライメント工程を実施できる。 According to the wafer processing method of the present invention, the alignment mark formed on the device wafer is detected by the visible light imaging means while irradiating light from an oblique angle with the oblique light means, and the alignment mark is aligned based on the alignment mark. Therefore, the alignment process can be easily carried out without removing the sealing material on the outer peripheral portion of the surface of the wafer as in the conventional case.

よって、デバイスウェーハ及び封止材に対して透過性を有する波長のレーザービームの集光点をデバイスウェーハ又は封止材の内部に位置付けて、ウェーハの表面側からレーザービームを照射して、デバイスウェーハ及び封止材の内部に改質層を形成し、該改質層を分割起点としてウェーハを表面が封止材によって封止された個々のデバイスチップに分割することができる。 Therefore, the focusing point of the laser beam having a wavelength that is transparent to the device wafer and the encapsulant is positioned inside the device wafer or the encapsulant, and the laser beam is irradiated from the surface side of the wafer to irradiate the device wafer. In addition, a modified layer can be formed inside the encapsulant, and the wafer can be divided into individual device chips whose surface is sealed by the encapsulant using the modified layer as a split starting point.

図１（Ａ）はWL-CSPウェーハの分解斜視図、図１（Ｂ）はWL-CSPウェーハの斜視図である。FIG. 1A is an exploded perspective view of the WL-CSP wafer, and FIG. 1B is a perspective view of the WL-CSP wafer. WL-CSPウェーハの拡大断面図である。It is an enlarged sectional view of a WL-CSP wafer. WL-CSPウェーハを外周部が環状フレームに装着されたダイシングテープに貼着する様子を示す斜視図である。It is a perspective view which shows the appearance of attaching the WL-CSP wafer to the dicing tape whose outer peripheral portion is attached to the annular frame. アライメント工程を示す断面図である。It is sectional drawing which shows the alignment process. 図５（Ａ）は改質層形成工程を示す断面図、図５（Ｂ）はデバイスウェーハの内部に集光点を位置付けた状態のWL-CSPウェーハの一部拡大断面図、図５（Ｃ）は封止材の内部に集光点を位置付けた状態のWL-CSPウェーハの一部拡大断面図である。5 (A) is a cross-sectional view showing a modified layer forming process, FIG. 5 (B) is a partially enlarged cross-sectional view of a WL-CSP wafer in a state where a condensing point is positioned inside the device wafer, and FIG. 5 (C). ) Is a partially enlarged cross-sectional view of the WL-CSP wafer in which the condensing point is positioned inside the encapsulant. 分割装置の斜視図である。It is a perspective view of a dividing device. 分割ステップを示す断面図である。It is sectional drawing which shows the division step. 分割ステップ実施後のWL-CSPウェーハの一部拡大断面図である。It is a partially enlarged sectional view of the WL-CSP wafer after the division step.

以下、本発明の実施形態を図面を参照して詳細に説明する。図１（Ａ）を参照すると、WL-CSPウェーハ２７の分解斜視図が示されている。図１（Ｂ）はWL-CSPウェーハ２７の斜視図である。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1A, an exploded perspective view of the WL-CSP wafer 27 is shown. FIG. 1B is a perspective view of the WL-CSP wafer 27.

図１（Ａ）に示されているように、デバイスウェーハ１１の表面１１ａには格子状に形成された複数の分割予定ライン（ストリート）１３によって区画された各領域にＬＳＩ等のデバイス１５が形成されている。 As shown in FIG. 1A, a device 15 such as an LSI is formed on the surface 11a of the device wafer 11 in each region partitioned by a plurality of scheduled division lines (streets) 13 formed in a grid pattern. Has been done.

デバイスウェーハ、（以下、単にウェーハと略称することがある）１１は予め裏面１１ｂが研削されて所定の厚さ（１００～２００μｍ程度）に薄化された後、図２に示すように、デバイス１５中の電極１７に電気的に接続された複数の金属ポスト２１を形成した後、ウェーハ１１の表面１１ａ側を金属ポスト２１が埋設するように封止材２３で封止する。 The device wafer, 11 (hereinafter, may be simply abbreviated as a wafer), has the back surface 11b ground in advance to be thinned to a predetermined thickness (about 100 to 200 μm), and then the device 15 as shown in FIG. After forming a plurality of metal posts 21 electrically connected to the inner electrode 17, the surface 11a side of the wafer 11 is sealed with a sealing material 23 so that the metal posts 21 are embedded.

封止材２３としては、質量％でエポキシ樹脂又はエポキシ樹脂＋フェノール樹脂１０．３％、シリカフィラー８．５３％、カーボンブラック０．１～０．２％、その他の成分４．２～４．３％を含む組成とした。その他の成分としては、例えば、金属水酸化物、三酸化アンチモン、二酸化ケイ素等を含む。 The encapsulant 23 includes epoxy resin or epoxy resin + phenol resin 10.3%, silica filler 8.53%, carbon black 0.1 to 0.2%, and other components 4.2 to 4. By mass%. The composition contained 3%. Other components include, for example, metal hydroxides, antimony trioxide, silicon dioxide and the like.

このような組成の封止材２３でウェーハ１１の表面１１ａを被覆してウェーハ１１の表面１１ａを封止すると、封止材２３中にごく少量含まれているカーボンブラックにより封止材２３が黒色となるため、封止材２３を通してウェーハ１１の表面１１ａを見ることは通常困難である。 When the surface 11a of the wafer 11 is covered with the sealing material 23 having such a composition and the surface 11a of the wafer 11 is sealed, the sealing material 23 becomes black due to the carbon black contained in the sealing material 23 in a very small amount. Therefore, it is usually difficult to see the surface 11a of the wafer 11 through the sealing material 23.

ここで封止材２３中にカーボンブラックを混入させるのは、主にデバイス１５の静電破壊を防止するためであり、現在のところカーボンブラックを含有しない封止材は市販されていない。 Here, the reason why carbon black is mixed in the sealing material 23 is mainly to prevent electrostatic breakdown of the device 15, and at present, a sealing material that does not contain carbon black is not commercially available.

他の実施形態として、デバイスウェーハ１１の表面１１ａ上に再配線層を形成した後、再配線層上にデバイス１５中の電極１７に電気的に接続された金属ポスト２１を形成するようにしても良い。 As another embodiment, after the rewiring layer is formed on the surface 11a of the device wafer 11, the metal post 21 electrically connected to the electrode 17 in the device 15 may be formed on the rewiring layer. good.

次いで、単結晶ダイアモンドからなるバイト切削工具を有する平面切削装置（サーフェスプレイナー）やグラインダーと呼ばれる研削装置を使用して封止材２３を薄化する。封止材２３を薄化した後、例えばプラズマエッチングにより金属ポスト２１の端面を露出させる。 Next, the sealing material 23 is thinned by using a surface cutting device (surface planer) having a tool cutting tool made of single crystal diamond or a grinding device called a grinder. After thinning the sealing material 23, the end face of the metal post 21 is exposed by, for example, plasma etching.

次いで、露出した金属ポスト２１の端面によく知られた方法によりハンダ等の金属バンプ２５を形成して、WL-CSPウェーハ２７が完成する。本実施形態のWL-CSPウェーハ２７では、封止材２３の厚さは１００μｍ程度である。 Next, a metal bump 25 such as solder is formed on the end face of the exposed metal post 21 by a well-known method to complete the WL-CSP wafer 27. In the WL-CSP wafer 27 of the present embodiment, the thickness of the sealing material 23 is about 100 μm.

WL-CSPウェーハ２７をレーザー加工装置で加工するのに当たり、図３に示すように、好ましくは、WL-CSPウェーハ２７を外周部が環状フレームＦに貼着された粘着テープとしてのダイシングテープＴに貼着する。これにより、WL-CSPウェーハ２７はダイシングテープＴを介して環状フレームＦに支持された状態となる。 When processing the WL-CSP wafer 27 with a laser processing device, as shown in FIG. 3, the WL-CSP wafer 27 is preferably used as a dicing tape T as an adhesive tape whose outer peripheral portion is attached to the annular frame F. Stick it on. As a result, the WL-CSP wafer 27 is in a state of being supported by the annular frame F via the dicing tape T.

しかし、WL-CSPウェーハ２７をレーザー加工装置で加工するのに当たり、環状フレームＦを使用せずに、WL-CSPウェーハ２７の裏面に粘着テープを貼着する形態でもよい。 However, when processing the WL-CSP wafer 27 with a laser processing device, an adhesive tape may be attached to the back surface of the WL-CSP wafer 27 without using the annular frame F.

本発明のウェーハの加工方法では、まず、WL-CSPウェーハ２７の表面側から可視光撮像手段によって封止材２３を通してデバイスウェーハ１１の表面１１ａを撮像し、デバイスウェーハ１１の表面に形成されている少なくとも２つのターゲットパターン等のアライメントマークを検出し、これらのアライメントマークに基づいて切削すべき分割予定ライン１３を検出するアライメント工程を実施する。 In the wafer processing method of the present invention, first, the surface 11a of the device wafer 11 is imaged from the surface side of the WL-CSP wafer 27 through the sealing material 23 by the visible light imaging means, and is formed on the surface of the device wafer 11. An alignment step is performed in which alignment marks such as at least two target patterns are detected, and a division schedule line 13 to be cut is detected based on these alignment marks.

このアライメント工程について、図４を参照して詳細に説明する。アライメント工程を実施する前に、ウェーハ１１の裏面１１ｂ側を外周部が環状フレームＦに装着されたダイシングテープＴに貼着する。 This alignment process will be described in detail with reference to FIG. Before performing the alignment step, the back surface 11b side of the wafer 11 is attached to the dicing tape T whose outer peripheral portion is attached to the annular frame F.

アライメント工程では、図４に示すように、ダイシングテープＴを介してレーザー加工装置のチャックテーブル１０でWL-CSPウェーハ２７を吸引保持し、デバイスウェーハ１１の表面１１ａを封止している封止材２３を上方に露出させる。そして、クランプ１２で環状フレームＦをクランプして固定する。 In the alignment step, as shown in FIG. 4, a sealing material that sucks and holds the WL-CSP wafer 27 on the chuck table 10 of the laser processing apparatus via the dicing tape T and seals the surface 11a of the device wafer 11. 23 is exposed upward. Then, the annular frame F is clamped and fixed by the clamp 12.

アライメント工程では、可視光撮像ユニット２６のＣＣＤ等の撮像素子でWL-CSPウェーハ２７の表面を撮像する。しかし、封止材２３中にはシリカフィラー、カーボンブラック等の成分が含まれており、更に封止材２３の表面には凹凸があるため、可視光撮像ユニット２６の垂直照明では封止材２３を透過してデバイスウェーハ１１の表面１１ａを撮像しても、撮像画像がピンボケとなってしまい、ターゲットパターン等のアライメントマークを検出するのが困難である。 In the alignment step, the surface of the WL-CSP wafer 27 is imaged by an image pickup element such as a CCD of the visible light image pickup unit 26. However, since the sealing material 23 contains components such as silica filler and carbon black, and the surface of the sealing material 23 has irregularities, the sealing material 23 is used for vertical illumination of the visible light imaging unit 26. Even if the surface 11a of the device wafer 11 is imaged through the image, the captured image becomes out of focus, and it is difficult to detect the alignment mark such as the target pattern.

そこで、本実施形態のアライメント工程では、可視光撮像ユニット２６の垂直照明に加えて斜光手段２８から撮像領域に斜めから光を照射し、撮像画像のピンボケを改善し、アライメントマークの検出を可能としている。 Therefore, in the alignment step of the present embodiment, in addition to the vertical illumination of the visible light imaging unit 26, the oblique light means 28 irradiates the imaging region with light from an angle to improve the out-of-focus of the captured image and enable the detection of the alignment mark. There is.

斜光手段２８から照射する光は白色光が好ましく、WL-CSPウェーハ２７の表面に対する入射角は３０°～６０°の範囲内が好ましい。好ましくは、可視光撮像ユニット２６は、露光時間等を調整できるエキスポージャーを備えている。 The light emitted from the oblique light means 28 is preferably white light, and the incident angle with respect to the surface of the WL-CSP wafer 27 is preferably in the range of 30 ° to 60 °. Preferably, the visible light imaging unit 26 is provided with an exposure that can adjust the exposure time and the like.

次いで、これらのアライメントマークを結んだ直線が加工送り方向と平行となるようにチャックテーブル１０をθ回転し、更にアライメントマークと分割予定ライン１３の中心との距離だけ図５（Ａ）に示すチャックテーブル１０を加工送り方向Ｘ１と直交する方向に移動することにより、レーザー加工すべき分割予定ライン１３を検出する。 Next, the chuck table 10 is rotated by θ so that the straight line connecting these alignment marks is parallel to the machining feed direction, and the chuck shown in FIG. 5A is further separated by the distance between the alignment mark and the center of the scheduled division line 13. By moving the table 10 in a direction orthogonal to the processing feed direction X1, the scheduled division line 13 to be laser-processed is detected.

アライメント工程を実施した後、図５（Ａ）に示すように、WL-CSPウェーハ２７の表面側から分割予定ライン１３に沿ってレーザー加工装置のレーザーヘッド（集光器）１６からデバイスウェーハ１１及び封止材２３に対して透過性を有する波長（例えば１０６４ｎｍ）のレーザービームＬＢをその集光点をデバイスウェーハ１１の内部又は封止材２３の内部に位置付けて、チャックテーブル１０を矢印Ｘ１方向又は矢印Ｘ２方向に加工送りすることにより、デバイスウェーハの内部及び封止材２３の内部に改質層２９（２９ａ，２９ｂ）を形成する改質層形成工程を実施する。 After performing the alignment step, as shown in FIG. 5A, from the surface side of the WL-CSP wafer 27 to the device wafer 11 and the device wafer 11 from the laser head (concentrator) 16 of the laser processing apparatus along the planned division line 13. A laser beam LB having a wavelength (for example, 1064 nm) that is transparent to the encapsulant 23 is positioned at its focusing point inside the device wafer 11 or inside the encapsulant 23, and the chuck table 10 is oriented in the arrow X1 direction or in the direction of the arrow X1. The modified layer forming step of forming the modified layer 29 (29a, 29b) inside the device wafer and the inside of the sealing material 23 is carried out by processing and feeding in the direction of the arrow X2.

改質層形成工程では、まず、図５（Ｂ）に示すように、レーザービームＬＢの集光点をデバイスウェーハ１１の内部に位置付けてチャックテーブル１０を矢印Ｘ１方向に加工送りすることにより、デバイスウェーハ１１の内部に集光点２９ａを形成する。 In the modified layer forming step, first, as shown in FIG. 5B, the condensing point of the laser beam LB is positioned inside the device wafer 11 and the chuck table 10 is machined and fed in the direction of the arrow X1 to feed the device. A light collecting point 29a is formed inside the wafer 11.

次いで、図５（Ｃ）に示すように、レーザービームＬＢの集光点を封止材２３の内部に位置付けて、チャックテーブル１０を矢印Ｘ２方向に加工送りすることにより、封止材２３の内部に改質層２９ｂを形成する。 Next, as shown in FIG. 5C, the condensing point of the laser beam LB is positioned inside the encapsulant 23, and the chuck table 10 is processed and fed in the direction of arrow X2, whereby the inside of the encapsulant 23 is processed. The modified layer 29b is formed on the surface.

この改質層形成工程を第１の方向に伸長する分割予定ライン１３に沿って往路及び復路で次々と実施した後、チャックテーブル１０を９０°回転し、第１の方向に直交する第２の方向に伸長する分割予定ライン１３に沿って往路及び復路で次々と実施する。 After performing this modified layer forming step one after another on the outward path and the return path along the planned division line 13 extending in the first direction, the chuck table 10 is rotated by 90 ° and the second is orthogonal to the first direction. It is carried out one after another on the outward route and the return route along the planned division line 13 extending in the direction.

改質層形成工程実施後、図６に示す分割装置５０を使用してWL-CSPウェーハ２７に外力を付与し、WL-CSPウェーハ２７を個々のデバイスチップ３１へと分割する分割工程を実施する。 After the reformed layer forming step is carried out, an external force is applied to the WL-CSP wafer 27 using the dividing device 50 shown in FIG. 6, and the dividing step of dividing the WL-CSP wafer 27 into individual device chips 31 is carried out. ..

図６に示す分割装置５０は、環状フレームＦを保持するフレーム保持手段５２と、フレーム保持手段５２に保持された環状フレームＦに装着されたダイシングテープＴを拡張するテープ拡張手段５４を具備している。 The dividing device 50 shown in FIG. 6 includes a frame holding means 52 for holding the annular frame F and a tape expanding means 54 for expanding the dicing tape T attached to the annular frame F held by the frame holding means 52. There is.

フレーム保持手段５２は、環状のフレーム保持部材５６と、フレーム保持部材５６の外周に配設された固定手段としての複数のクランプ５８から構成される。フレーム保持部材５６の上面は環状フレームＦを載置する載置面５６ａを形成しており、この載置面５６ａ上に環状フレームＦが載置される。 The frame holding means 52 is composed of an annular frame holding member 56 and a plurality of clamps 58 as fixing means arranged on the outer periphery of the frame holding member 56. The upper surface of the frame holding member 56 forms a mounting surface 56a on which the annular frame F is mounted, and the annular frame F is mounted on the mounting surface 56a.

そして、載置面５６ａ上に載置された環状フレームＦは、クランプ５８によってフレーム保持手段５６に固定される。このように構成されたフレーム保持手段５２はテープ拡張手段５４によって上下方向に移動可能に支持されている。 Then, the annular frame F mounted on the mounting surface 56a is fixed to the frame holding means 56 by the clamp 58. The frame holding means 52 configured in this way is supported by the tape expanding means 54 so as to be movable in the vertical direction.

テープ拡張手段５４は、環状のフレーム保持部材５６の内側に配設された拡張ドラム６０を具備している。拡張ドラム６０の上端は蓋６２で閉鎖されている。この拡張ドラム６０は、環状フレームＦの内径より小さく、環状フレームＦに装着されたダイシングテープＴに貼着されるWL-CSPウェーハ２７の外径より大きい内径を有している。 The tape expanding means 54 includes an expansion drum 60 disposed inside the annular frame holding member 56. The upper end of the expansion drum 60 is closed by a lid 62. The expansion drum 60 has an inner diameter smaller than the inner diameter of the annular frame F and larger than the outer diameter of the WL-CSP wafer 27 attached to the dicing tape T attached to the annular frame F.

拡張ドラム６０はその下端に一体的に形成された支持フランジ６４を有している。テープ拡張手段５４は更に、環状のフレーム保持部材５６を上下方向に移動する駆動手段６６を具備している。この駆動手段６６は支持フランジ６４上に配設された複数のエアシリンダ６８から構成されており、そのピストンロッド７０はフレーム保持部材５６の下面に連結されている。 The expansion drum 60 has a support flange 64 integrally formed at the lower end thereof. The tape expanding means 54 further includes a driving means 66 for moving the annular frame holding member 56 in the vertical direction. The drive means 66 is composed of a plurality of air cylinders 68 arranged on the support flange 64, and the piston rod 70 thereof is connected to the lower surface of the frame holding member 56.

複数のエアシリンダ６８から構成される駆動手段６６は、環状のフレーム保持部材５６を、その載置面５６ａが拡張ドラム６０の上端である蓋６２の表面と略同一高さとなる基準位置と、拡張ドラム６０の上端より所定量下方の拡張位置との間で上下方向に移動する。 The drive means 66 composed of a plurality of air cylinders 68 extends the annular frame holding member 56 to a reference position where the mounting surface 56a thereof is substantially the same height as the surface of the lid 62 which is the upper end of the expansion drum 60. It moves up and down with the expansion position below the upper end of the drum 60 by a predetermined amount.

以上のように構成された分割装置５０を用いて実施するWL-CSPウェーハ２７の分割工程について図７を参照して説明する。図７（Ａ）に示すように、WL-CSPウェーハ２７をダイシングテープＴを介して支持した環状フレームＦを、フレーム保持部材５６の載置面５６ａ上に載置し、クランプ５８によってフレーム保持部材５６に固定する。この時、フレーム保持部材５６はその載置面５６ａが拡張ドラム６０の上端と略同一高さとなる基準位置に位置付けられる。 The division process of the WL-CSP wafer 27 carried out by using the division device 50 configured as described above will be described with reference to FIG. 7. As shown in FIG. 7A, the annular frame F in which the WL-CSP wafer 27 is supported via the dicing tape T is placed on the mounting surface 56a of the frame holding member 56, and the frame holding member is mounted by the clamp 58. It is fixed to 56. At this time, the frame holding member 56 is positioned at a reference position where the mounting surface 56a is substantially the same height as the upper end of the expansion drum 60.

次いで、エアシリンダ６８を駆動してフレーム保持部材５６を図７（Ｂ）に示す拡張位置に下降する。これにより、フレーム保持部材５６の載置面５６ａ上に固定されている環状フレームＦを下降するため、環状フレームＦに装着されたダイシングテープＴは拡張ドラム６０の上端縁に当接して主に半径方向に拡張される。 Next, the air cylinder 68 is driven to lower the frame holding member 56 to the extended position shown in FIG. 7 (B). As a result, the annular frame F fixed on the mounting surface 56a of the frame holding member 56 is lowered, so that the dicing tape T attached to the annular frame F abuts on the upper end edge of the expansion drum 60 and mainly has a radius. Expanded in the direction.

その結果、ダイシングテープＴに貼着されているWL-CSPウェーハ２７には放射状に引っ張り力が作用する。このようにWL-CSPウェーハ２７に放射状に引っ張り力が作用すると、分割予定ライン１３に沿ってデバイスウェーハ１１中に形成された改質層２９ａ及び封止材２３中に形成された改質層２９ｂが分割起点となってWL-CSPウェーハ２７が分割予定ライン１３に沿って図８の拡大断面図に示すように割断され、表面が封止材２３によって封止された個々のデバイスチップ３１に分割される。 As a result, a tensile force acts radially on the WL-CSP wafer 27 attached to the dicing tape T. When the tensile force acts radially on the WL-CSP wafer 27 in this way, the modified layer 29a formed in the device wafer 11 and the modified layer 29b formed in the encapsulant 23 along the planned split line 13 are formed. The WL-CSP wafer 27 is split along the planned split line 13 as shown in the enlarged cross-sectional view of FIG. 8, and the surface is split into individual device chips 31 whose surface is sealed by the sealing material 23. Will be done.

１１ デバイスウェーハ
１３ 分割予定ライン
１５ デバイス
１６ レーザーヘッド（集光器）
２１ 金属ポスト
２３ 封止材
２５ バンプ
２６ 可視光撮像手段（可視光撮像ユニット）
２７ WL-CSPウェーハ
２８ 斜光手段
２９，２９ａ，２９ｂ 改質層
３１ デバイスチップ
５０ 分割装置 11 Device wafer 13 Scheduled division line 15 Device 16 Laser head (concentrator)
21 Metal post 23 Encapsulant 25 Bump 26 Visible light imaging means (visible light imaging unit)
27 WL-CSP Wafer 28 Oblique Means 29, 29a, 29b Modified Layer 31 Device Chip 50 Divider

Claims (3)

表面に交差して形成された複数の分割予定ラインによって区画されたチップ領域にそれぞれデバイスが形成されたデバイスウェーハの表面が封止材で封止され、該封止材の該チップ領域にそれぞれ複数のバンプが形成されたウェーハの加工方法であって、
該ウェーハの表面側から可視光撮像手段によって該封止材を透過して該デバイスウェーハの表面側を撮像してアライメントマークを検出し、該アライメントマークに基づいてレーザー加工すべき該分割予定ラインを検出するアライメント工程と、
該アライメント工程を実施した後、該デバイスウェーハ及び該封止材に対して透過性を有する波長のレーザービームの集光点を該デバイスウェーハ又は該封止材の内部に位置付けて、該ウェーハの表面側から該分割予定ラインに沿ってレーザービームを照射して、該デバイスウェーハ及び該封止材の内部に改質層を形成する改質層形成工程と、
該改質層形成工程を実施した後、該デバイスウェーハ及び該封止材に外力を付与して該改質層を分割起点として表面が該封止材によって封止された個々のデバイスチップに分割する分割工程と、を備え、
該アライメント工程は、該封止材を除去することなく、該可視光撮像手段によって撮像する領域に斜光手段によって斜めから光を照射しながら実施することを特徴とするウェーハの加工方法。 The surface of the device wafer in which the device is formed in each chip region partitioned by a plurality of scheduled division lines formed intersecting the surface is sealed with a sealing material, and a plurality of each in the chip region of the sealing material. It is a method of processing a wafer on which bumps are formed.
From the surface side of the wafer, the sealing material is transmitted through the sealing material, the surface side of the device wafer is imaged to detect an alignment mark, and the scheduled division line to be laser-processed based on the alignment mark is defined. Alignment process to detect and
After performing the alignment step, the focusing point of the laser beam having a wavelength that is transparent to the device wafer and the encapsulant is positioned inside the device wafer or the encapsulant, and the surface of the wafer is surfaced. A modified layer forming step of irradiating a laser beam from the side along the planned division line to form a modified layer inside the device wafer and the encapsulant.
After performing the modified layer forming step, an external force is applied to the device wafer and the encapsulant, and the surface is divided into individual device chips whose surface is sealed by the encapsulant using the modified layer as a division starting point. With a splitting process
The alignment step is a method for processing a wafer, which comprises irradiating a region to be imaged by the visible light imaging means with light from an oblique direction by the oblique light means without removing the sealing material . 該封止材は、カーボンブラックを含み、The encapsulant contains carbon black and
該封止材における該カーボンブラックの含有率は、０．１質量％以上０．２質量％以下であることを特徴とする請求項１に記載のウェーハの加工方法。The wafer processing method according to claim 1, wherein the content of the carbon black in the encapsulant is 0.1% by mass or more and 0.2% by mass or less. 該アライメント工程では、該可視光撮像手段の垂直照明と該斜光手段からの該光とを、該可視光撮像手段によって撮像する領域に照射することを特徴とする請求項１又は２に記載のウェーハの加工方法。The wafer according to claim 1 or 2, wherein in the alignment step, the vertical illumination of the visible light imaging means and the light from the oblique light means are applied to a region to be imaged by the visible light imaging means. Processing method.
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