JP6997945B2 - 積層配線膜およびその製造方法ならびにＭｏ合金スパッタリングターゲット材 - Google Patents

積層配線膜およびその製造方法ならびにＭｏ合金スパッタリングターゲット材 Download PDF

Info

Publication number
JP6997945B2
JP6997945B2 JP2017222537A JP2017222537A JP6997945B2 JP 6997945 B2 JP6997945 B2 JP 6997945B2 JP 2017222537 A JP2017222537 A JP 2017222537A JP 2017222537 A JP2017222537 A JP 2017222537A JP 6997945 B2 JP6997945 B2 JP 6997945B2
Authority
JP
Japan
Prior art keywords
film
alloy
atomic
target material
laminated wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017222537A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018107432A (ja
Inventor
英夫 村田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Metals Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of JP2018107432A publication Critical patent/JP2018107432A/ja
Application granted granted Critical
Publication of JP6997945B2 publication Critical patent/JP6997945B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0003—Apparatus or processes specially adapted for manufacturing conductors or cables for feeding conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)
JP2017222537A 2016-12-27 2017-11-20 積層配線膜およびその製造方法ならびにＭｏ合金スパッタリングターゲット材 Active JP6997945B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016252954 2016-12-27
JP2016252954 2016-12-27

Publications (2)

Publication Number Publication Date
JP2018107432A JP2018107432A (ja) 2018-07-05
JP6997945B2 true JP6997945B2 (ja) 2022-01-18

Family

ID=62700596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017222537A Active JP6997945B2 (ja) 2016-12-27 2017-11-20 積層配線膜およびその製造方法ならびにＭｏ合金スパッタリングターゲット材

Country Status (4)

Country Link
JP (1) JP6997945B2 (zh)
KR (1) KR102012210B1 (zh)
CN (1) CN108242276B (zh)
TW (1) TWI654623B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110767660B (zh) * 2018-07-24 2022-09-16 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板
CN110872687B (zh) * 2018-09-03 2022-07-19 大同特殊钢株式会社 层叠体及靶材
CN109524303B (zh) * 2018-11-23 2021-03-19 京东方科技集团股份有限公司 导电图形及其制作方法、显示基板、显示装置
JP7419885B2 (ja) * 2019-03-20 2024-01-23 株式会社プロテリアル Ｍｏ合金ターゲット材およびその製造方法
JP7419886B2 (ja) * 2019-03-20 2024-01-23 株式会社プロテリアル Ｍｏ合金ターゲット材およびその製造方法
JP7427576B2 (ja) * 2020-04-16 2024-02-05 株式会社神戸製鋼所 Ａｌ合金蒸着膜、ディスプレイ用配線膜、ディスプレイ装置及びスパッタリングターゲット
CN112813393B (zh) * 2020-12-31 2023-08-01 金堆城钼业股份有限公司 一种钼镍合金靶材及其制备方法
CN115637412A (zh) * 2022-09-27 2023-01-24 芜湖映日科技股份有限公司 一种钼合金靶材及其制作工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000214309A (ja) 1999-01-25 2000-08-04 Asahi Glass Co Ltd ブラックマトリックス薄膜付き基板、カラ―フィルタ基板、ブラックマトリックス薄膜形成用タ―ゲットおよび基板の製造方法
JP2016502592A (ja) 2012-10-23 2016-01-28 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテルハフツング ウント コンパニー コマンディートゲゼルシャフトＨｅｒａｅｕｓ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ＆Ｃｏ．ＫＧ 光を吸収する層系及びその製造並びにそのために適したスパッタターゲット
JP2016027195A (ja) 2014-06-27 2016-02-18 三菱マテリアル株式会社 スパッタリングターゲット、光学機能膜、及び、積層配線膜
JP2016522317A (ja) 2013-04-11 2016-07-28 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトＨｅｒａｅｕｓ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ＆Ｃｏ．ＫＧ 光吸収層及びこの層を有する層系、層系の製造方法及びこのために適したスパッタターゲット

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4496518B2 (ja) * 2002-08-19 2010-07-07 日立金属株式会社 薄膜配線
JP4655281B2 (ja) 2005-03-29 2011-03-23 日立金属株式会社 薄膜配線層
JP5532767B2 (ja) 2009-09-04 2014-06-25 大同特殊鋼株式会社 Ｃｕ電極保護膜用ＮｉＣｕ合金ターゲット材
JP6016083B2 (ja) * 2011-08-19 2016-10-26 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6292466B2 (ja) * 2013-02-20 2018-03-14 日立金属株式会社 金属薄膜および金属薄膜形成用Ｍｏ合金スパッタリングターゲット材
JP6361957B2 (ja) * 2013-03-22 2018-07-25 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6369750B2 (ja) * 2013-09-10 2018-08-08 日立金属株式会社 積層配線膜およびその製造方法ならびにＮｉ合金スパッタリングターゲット材
KR20160069823A (ko) * 2014-12-09 2016-06-17 주식회사 엘지화학 전도성 구조체 및 이의 제조방법
JP6681019B2 (ja) * 2015-02-25 2020-04-15 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000214309A (ja) 1999-01-25 2000-08-04 Asahi Glass Co Ltd ブラックマトリックス薄膜付き基板、カラ―フィルタ基板、ブラックマトリックス薄膜形成用タ―ゲットおよび基板の製造方法
JP2016502592A (ja) 2012-10-23 2016-01-28 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテルハフツング ウント コンパニー コマンディートゲゼルシャフトＨｅｒａｅｕｓ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ＆Ｃｏ．ＫＧ 光を吸収する層系及びその製造並びにそのために適したスパッタターゲット
JP2016522317A (ja) 2013-04-11 2016-07-28 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトＨｅｒａｅｕｓ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ＆Ｃｏ．ＫＧ 光吸収層及びこの層を有する層系、層系の製造方法及びこのために適したスパッタターゲット
JP2016027195A (ja) 2014-06-27 2016-02-18 三菱マテリアル株式会社 スパッタリングターゲット、光学機能膜、及び、積層配線膜

Also Published As

Publication number Publication date
KR20180076316A (ko) 2018-07-05
TWI654623B (zh) 2019-03-21
JP2018107432A (ja) 2018-07-05
CN108242276A (zh) 2018-07-03
KR102012210B1 (ko) 2019-08-21
TW201842514A (zh) 2018-12-01
CN108242276B (zh) 2020-08-25

Similar Documents

Publication Publication Date Title
JP6997945B2 (ja) 積層配線膜およびその製造方法ならびにＭｏ合金スパッタリングターゲット材
JP6369750B2 (ja) 積層配線膜およびその製造方法ならびにＮｉ合金スパッタリングターゲット材
KR101613001B1 (ko) Mo 합금 스퍼터링 타깃재의 제조 방법 및 Mo 합금 스퍼터링 타깃재
JP6016083B2 (ja) 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6292471B2 (ja) 電子部品用金属薄膜および金属薄膜形成用Ｍｏ合金スパッタリングターゲット材
JP2016157925A (ja) 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
KR101609453B1 (ko) Cu-Mn 합금막 및 Cu-Mn 합금 스퍼터링 타깃재 및 Cu-Mn 합금막의 성막 방법
JP2017066519A (ja) 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP2016178286A (ja) 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
KR101597018B1 (ko) 금속 박막 및 금속 박막 형성용 Mo 합금 스퍼터링 타깃재
JP6380837B2 (ja) 被覆層形成用スパッタリングターゲット材およびその製造方法
JP6361957B2 (ja) 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6037208B2 (ja) 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
KR101337141B1 (ko) 전자부품용 적층 배선막

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201014

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210916

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210916

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211007

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211118

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211201

R150 Certificate of patent or registration of utility model

Ref document number: 6997945

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350