JP6997945B2 - 積層配線膜およびその製造方法ならびにMo合金スパッタリングターゲット材 - Google Patents

積層配線膜およびその製造方法ならびにMo合金スパッタリングターゲット材 Download PDF

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JP6997945B2
JP6997945B2 JP2017222537A JP2017222537A JP6997945B2 JP 6997945 B2 JP6997945 B2 JP 6997945B2 JP 2017222537 A JP2017222537 A JP 2017222537A JP 2017222537 A JP2017222537 A JP 2017222537A JP 6997945 B2 JP6997945 B2 JP 6997945B2
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film
alloy
atomic
target material
laminated wiring
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JP2018107432A (ja
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英夫 村田
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Hitachi Metals Ltd
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Hitachi Metals Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008Making conductor-insulator-semiconductor electrodes
    • H01L21/28017Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/20Metallic material, boron or silicon on organic substrates
    • C23C14/205Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0003Apparatus or processes specially adapted for manufacturing conductors or cables for feeding conductors or cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]

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  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)
JP2017222537A 2016-12-27 2017-11-20 積層配線膜およびその製造方法ならびにMo合金スパッタリングターゲット材 Active JP6997945B2 (ja)

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JP2016252954 2016-12-27
JP2016252954 2016-12-27

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JP6997945B2 true JP6997945B2 (ja) 2022-01-18

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JP (1) JP6997945B2 (zh)
KR (1) KR102012210B1 (zh)
CN (1) CN108242276B (zh)
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110767660B (zh) * 2018-07-24 2022-09-16 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板
CN110872687B (zh) * 2018-09-03 2022-07-19 大同特殊钢株式会社 层叠体及靶材
CN109524303B (zh) * 2018-11-23 2021-03-19 京东方科技集团股份有限公司 导电图形及其制作方法、显示基板、显示装置
JP7419885B2 (ja) * 2019-03-20 2024-01-23 株式会社プロテリアル Mo合金ターゲット材およびその製造方法
JP7419886B2 (ja) * 2019-03-20 2024-01-23 株式会社プロテリアル Mo合金ターゲット材およびその製造方法
JP7427576B2 (ja) * 2020-04-16 2024-02-05 株式会社神戸製鋼所 Al合金蒸着膜、ディスプレイ用配線膜、ディスプレイ装置及びスパッタリングターゲット
CN112813393B (zh) * 2020-12-31 2023-08-01 金堆城钼业股份有限公司 一种钼镍合金靶材及其制备方法
CN115637412A (zh) * 2022-09-27 2023-01-24 芜湖映日科技股份有限公司 一种钼合金靶材及其制作工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000214309A (ja) 1999-01-25 2000-08-04 Asahi Glass Co Ltd ブラックマトリックス薄膜付き基板、カラ―フィルタ基板、ブラックマトリックス薄膜形成用タ―ゲットおよび基板の製造方法
JP2016502592A (ja) 2012-10-23 2016-01-28 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテルハフツング ウント コンパニー コマンディートゲゼルシャフトHeraeus Deutschland GmbH&Co.KG 光を吸収する層系及びその製造並びにそのために適したスパッタターゲット
JP2016027195A (ja) 2014-06-27 2016-02-18 三菱マテリアル株式会社 スパッタリングターゲット、光学機能膜、及び、積層配線膜
JP2016522317A (ja) 2013-04-11 2016-07-28 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトHeraeus Deutschland GmbH&Co.KG 光吸収層及びこの層を有する層系、層系の製造方法及びこのために適したスパッタターゲット

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JP4496518B2 (ja) * 2002-08-19 2010-07-07 日立金属株式会社 薄膜配線
JP4655281B2 (ja) 2005-03-29 2011-03-23 日立金属株式会社 薄膜配線層
JP5532767B2 (ja) 2009-09-04 2014-06-25 大同特殊鋼株式会社 Cu電極保護膜用NiCu合金ターゲット材
JP6016083B2 (ja) * 2011-08-19 2016-10-26 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6292466B2 (ja) * 2013-02-20 2018-03-14 日立金属株式会社 金属薄膜および金属薄膜形成用Mo合金スパッタリングターゲット材
JP6361957B2 (ja) * 2013-03-22 2018-07-25 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6369750B2 (ja) * 2013-09-10 2018-08-08 日立金属株式会社 積層配線膜およびその製造方法ならびにNi合金スパッタリングターゲット材
KR20160069823A (ko) * 2014-12-09 2016-06-17 주식회사 엘지화학 전도성 구조체 및 이의 제조방법
JP6681019B2 (ja) * 2015-02-25 2020-04-15 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000214309A (ja) 1999-01-25 2000-08-04 Asahi Glass Co Ltd ブラックマトリックス薄膜付き基板、カラ―フィルタ基板、ブラックマトリックス薄膜形成用タ―ゲットおよび基板の製造方法
JP2016502592A (ja) 2012-10-23 2016-01-28 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテルハフツング ウント コンパニー コマンディートゲゼルシャフトHeraeus Deutschland GmbH&Co.KG 光を吸収する層系及びその製造並びにそのために適したスパッタターゲット
JP2016522317A (ja) 2013-04-11 2016-07-28 ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトHeraeus Deutschland GmbH&Co.KG 光吸収層及びこの層を有する層系、層系の製造方法及びこのために適したスパッタターゲット
JP2016027195A (ja) 2014-06-27 2016-02-18 三菱マテリアル株式会社 スパッタリングターゲット、光学機能膜、及び、積層配線膜

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KR20180076316A (ko) 2018-07-05
TWI654623B (zh) 2019-03-21
JP2018107432A (ja) 2018-07-05
CN108242276A (zh) 2018-07-03
KR102012210B1 (ko) 2019-08-21
TW201842514A (zh) 2018-12-01
CN108242276B (zh) 2020-08-25

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