JP6997945B2 - 積層配線膜およびその製造方法ならびにMo合金スパッタリングターゲット材 - Google Patents
積層配線膜およびその製造方法ならびにMo合金スパッタリングターゲット材 Download PDFInfo
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- JP6997945B2 JP6997945B2 JP2017222537A JP2017222537A JP6997945B2 JP 6997945 B2 JP6997945 B2 JP 6997945B2 JP 2017222537 A JP2017222537 A JP 2017222537A JP 2017222537 A JP2017222537 A JP 2017222537A JP 6997945 B2 JP6997945 B2 JP 6997945B2
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- 229910001182 Mo alloy Inorganic materials 0.000 title claims description 40
- 238000005477 sputtering target Methods 0.000 title claims description 39
- 239000013077 target material Substances 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000011229 interlayer Substances 0.000 claims description 69
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 37
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 238000004544 sputter deposition Methods 0.000 claims description 23
- 229910052719 titanium Inorganic materials 0.000 claims description 22
- 229910052758 niobium Inorganic materials 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910052720 vanadium Inorganic materials 0.000 claims description 11
- 229910052742 iron Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 150000003624 transition metals Chemical class 0.000 claims description 4
- 239000010408 film Substances 0.000 description 231
- 239000010949 copper Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 19
- 239000000843 powder Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 11
- 238000002438 flame photometric detection Methods 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001803 electron scattering Methods 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0003—Apparatus or processes specially adapted for manufacturing conductors or cables for feeding conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2016252954 | 2016-12-27 | ||
JP2016252954 | 2016-12-27 |
Publications (2)
Publication Number | Publication Date |
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JP2018107432A JP2018107432A (ja) | 2018-07-05 |
JP6997945B2 true JP6997945B2 (ja) | 2022-01-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2017222537A Active JP6997945B2 (ja) | 2016-12-27 | 2017-11-20 | 積層配線膜およびその製造方法ならびにMo合金スパッタリングターゲット材 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6997945B2 (zh) |
KR (1) | KR102012210B1 (zh) |
CN (1) | CN108242276B (zh) |
TW (1) | TWI654623B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110767660B (zh) * | 2018-07-24 | 2022-09-16 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板 |
CN110872687B (zh) * | 2018-09-03 | 2022-07-19 | 大同特殊钢株式会社 | 层叠体及靶材 |
CN109524303B (zh) * | 2018-11-23 | 2021-03-19 | 京东方科技集团股份有限公司 | 导电图形及其制作方法、显示基板、显示装置 |
JP7419885B2 (ja) * | 2019-03-20 | 2024-01-23 | 株式会社プロテリアル | Mo合金ターゲット材およびその製造方法 |
JP7419886B2 (ja) * | 2019-03-20 | 2024-01-23 | 株式会社プロテリアル | Mo合金ターゲット材およびその製造方法 |
JP7427576B2 (ja) * | 2020-04-16 | 2024-02-05 | 株式会社神戸製鋼所 | Al合金蒸着膜、ディスプレイ用配線膜、ディスプレイ装置及びスパッタリングターゲット |
CN112813393B (zh) * | 2020-12-31 | 2023-08-01 | 金堆城钼业股份有限公司 | 一种钼镍合金靶材及其制备方法 |
CN115637412A (zh) * | 2022-09-27 | 2023-01-24 | 芜湖映日科技股份有限公司 | 一种钼合金靶材及其制作工艺 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000214309A (ja) | 1999-01-25 | 2000-08-04 | Asahi Glass Co Ltd | ブラックマトリックス薄膜付き基板、カラ―フィルタ基板、ブラックマトリックス薄膜形成用タ―ゲットおよび基板の製造方法 |
JP2016502592A (ja) | 2012-10-23 | 2016-01-28 | ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテルハフツング ウント コンパニー コマンディートゲゼルシャフトHeraeus Deutschland GmbH&Co.KG | 光を吸収する層系及びその製造並びにそのために適したスパッタターゲット |
JP2016027195A (ja) | 2014-06-27 | 2016-02-18 | 三菱マテリアル株式会社 | スパッタリングターゲット、光学機能膜、及び、積層配線膜 |
JP2016522317A (ja) | 2013-04-11 | 2016-07-28 | ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトHeraeus Deutschland GmbH&Co.KG | 光吸収層及びこの層を有する層系、層系の製造方法及びこのために適したスパッタターゲット |
Family Cites Families (9)
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JP4496518B2 (ja) * | 2002-08-19 | 2010-07-07 | 日立金属株式会社 | 薄膜配線 |
JP4655281B2 (ja) | 2005-03-29 | 2011-03-23 | 日立金属株式会社 | 薄膜配線層 |
JP5532767B2 (ja) | 2009-09-04 | 2014-06-25 | 大同特殊鋼株式会社 | Cu電極保護膜用NiCu合金ターゲット材 |
JP6016083B2 (ja) * | 2011-08-19 | 2016-10-26 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
JP6292466B2 (ja) * | 2013-02-20 | 2018-03-14 | 日立金属株式会社 | 金属薄膜および金属薄膜形成用Mo合金スパッタリングターゲット材 |
JP6361957B2 (ja) * | 2013-03-22 | 2018-07-25 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
JP6369750B2 (ja) * | 2013-09-10 | 2018-08-08 | 日立金属株式会社 | 積層配線膜およびその製造方法ならびにNi合金スパッタリングターゲット材 |
KR20160069823A (ko) * | 2014-12-09 | 2016-06-17 | 주식회사 엘지화학 | 전도성 구조체 및 이의 제조방법 |
JP6681019B2 (ja) * | 2015-02-25 | 2020-04-15 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
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2017
- 2017-11-20 JP JP2017222537A patent/JP6997945B2/ja active Active
- 2017-11-30 TW TW106141730A patent/TWI654623B/zh active
- 2017-12-21 KR KR1020170176919A patent/KR102012210B1/ko active IP Right Grant
- 2017-12-27 CN CN201711446069.7A patent/CN108242276B/zh active Active
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JP2000214309A (ja) | 1999-01-25 | 2000-08-04 | Asahi Glass Co Ltd | ブラックマトリックス薄膜付き基板、カラ―フィルタ基板、ブラックマトリックス薄膜形成用タ―ゲットおよび基板の製造方法 |
JP2016502592A (ja) | 2012-10-23 | 2016-01-28 | ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテルハフツング ウント コンパニー コマンディートゲゼルシャフトHeraeus Deutschland GmbH&Co.KG | 光を吸収する層系及びその製造並びにそのために適したスパッタターゲット |
JP2016522317A (ja) | 2013-04-11 | 2016-07-28 | ヘレーウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトHeraeus Deutschland GmbH&Co.KG | 光吸収層及びこの層を有する層系、層系の製造方法及びこのために適したスパッタターゲット |
JP2016027195A (ja) | 2014-06-27 | 2016-02-18 | 三菱マテリアル株式会社 | スパッタリングターゲット、光学機能膜、及び、積層配線膜 |
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CN108242276A (zh) | 2018-07-03 |
KR102012210B1 (ko) | 2019-08-21 |
TW201842514A (zh) | 2018-12-01 |
CN108242276B (zh) | 2020-08-25 |
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