JP6993809B2 - 表示装置およびその製造方法ならびに電子機器 - Google Patents
表示装置およびその製造方法ならびに電子機器 Download PDFInfo
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Description
Claims (24)
- 第1電極と、第2電極と、前記第1電極と前記第2電極との間に配置された有機層と、前記第1電極の少なくとも側面を被覆する絶縁膜とを有する表示装置であって、
前記絶縁膜は、前記第1電極の側面の少なくとも一部分を被覆する第1絶縁層と、前記側面を被覆する第2絶縁層とを含み、前記第1絶縁層は、前記側面と前記第2絶縁層との間に配置され、前記第1絶縁層は、第1部分と、前記第1部分よりも密度が低い第2部分とを含み、
前記第1電極は、層間絶縁膜の上面の上に、第1導電材料層と第2導電材料層とを含む複数の導電材料層が積層された積層構造を有し、
前記層間絶縁膜の上面に対する平面視において、前記第1導電材料層の側面は、前記第2導電材料層の側面よりも突出しており、
前記第2部分は、前記第1電極の側面の側方であって、かつ、前記第1導電材料層の前記側面の近傍に配置されている、
ことを特徴とする表示装置。 - 前記第2部分は、前記第1導電材料層と前記層間絶縁膜の前記上面との間に配置されている、
ことを特徴とする請求項1に記載の表示装置。 - 第1電極と、第2電極と、前記第1電極と前記第2電極との間に配置された有機層と、前記第1電極の少なくとも側面を被覆する絶縁膜とを有する表示装置であって、
前記絶縁膜は、前記第1電極の側面の少なくとも一部分を被覆する第1絶縁層と、前記側面を被覆する第2絶縁層とを含み、前記第1絶縁層は、前記側面と前記第2絶縁層との間に配置され、前記第1絶縁層は、第1部分と、前記第1部分よりも密度が低い第2部分とを含み、
前記第1電極は、層間絶縁膜の上面の上に、第1導電材料層と第2導電材料層とを含む複数の導電材料層が積層された積層構造を有し、
前記層間絶縁膜の上面に対する平面視において、前記第1導電材料層の側面は、前記第2導電材料層の側面よりも突出しており、
前記第2部分は、前記第1電極の側面の側方であって、かつ、前記第1導電材料層と前記層間絶縁膜の前記上面との間に配置されている、
ことを特徴とする表示装置。 - 前記第2導電材料層は、前記第1導電材料層の上に配置されており、
前記第2部分は、前記第2導電材料層の前記側面の側方であって、かつ、前記第1導電材料層の上に配置されている、
ことを特徴とする請求項1に記載の表示装置。 - 第1電極と、第2電極と、前記第1電極と前記第2電極との間に配置された有機層と、前記第1電極の少なくとも側面を被覆する絶縁膜とを有する表示装置であって、
前記絶縁膜は、前記第1電極の側面の少なくとも一部分を被覆する第1絶縁層と、前記側面を被覆する第2絶縁層とを含み、前記第1絶縁層は、前記側面と前記第2絶縁層との間に配置され、前記第1絶縁層は、第1部分と、前記第1部分よりも密度が低い第2部分とを含み、
前記第1電極は、層間絶縁膜の上面の上に、第1導電材料層と、前記第1導電材料層の上に配置された第2導電材料層とを含む複数の導電材料層が積層された積層構造を有し、
前記層間絶縁膜の上面に対する平面視において、前記第1導電材料層の側面は、前記第2導電材料層の側面よりも突出しており、
前記第2部分は、前記第2導電材料層の前記側面の側方であって、かつ、前記第1導電材料層の上に配置されている、
ことを特徴とする表示装置。 - 前記第1導電材料層は、前記層間絶縁膜の上面に対する平面視において前記複数の導電材料層の中で側面が最も突出した導電材料層であり、
前記第2導電材料層は、前記第1導電材料層の下に配置され、前記複数の導電材料層の中で側面が最も窪んだ導電材料層であり、
前記第1絶縁層のうち前記第1導電材料層の側面を被覆している部分の最大厚さをD1、前記第1絶縁層のうち前記第2導電材料層の側面を被覆している部分の最大厚さをD2とし、前記第2絶縁層のうち前記第1導電材料層の側面を被覆している部分の最大厚さをD3とし、前記第2絶縁層のうち前記第2導電材料層の側面を被覆している部分の最大厚さをD4としたときに、D3/D4>D1/D2を満たす、
ことを特徴とする請求項1乃至3のいずれか1項に記載の表示装置。 - 前記第2絶縁層は、隣り合う前記第1電極の間の空間に充填されるように、かつ、前記第2部分が被覆されるように配置されている、
ことを特徴とする請求項1乃至6のいずれか1項に記載の表示装置。 - 前記第1電極の側面は、段差を有し、前記第1絶縁層および前記第2絶縁層は、前記段差に沿ってオーバーハングした形状を有する、
ことを特徴とする請求項1乃至7のいずれか1項に記載の表示装置。 - 第1電極と、第2電極と、前記第1電極と前記第2電極との間に配置された有機層と、前記第1電極の少なくとも側面を被覆する絶縁膜とを有する表示装置であって、
前記絶縁膜は、連続的な形状を有し、
前記絶縁膜は、前記第1電極の側面の少なくとも一部分を被覆する第1絶縁層と、前記側面を被覆する第2絶縁層とを含み、
前記第2絶縁層のアルゴンの含有率は、前記第1絶縁層のアルゴンの含有率よりも高いことを特徴とする表示装置。 - 前記第1電極の上面の上における前記第1絶縁層の厚さは、前記複数の導電材料層のうちの前記第1電極の上面を構成する導電材料層の厚さより厚い、
ことを特徴とする請求項1乃至8のいずれか1項に記載の表示装置。 - 前記第1導電材料層は、前記複数の導電材料層の中で前記層間絶縁膜の上面に対する平面視において側面が最も突出した導電材料層であり、
前記第1電極の上面の上における前記第1絶縁層の厚さは、前記第1導電材料層の厚さより厚い、
ことを特徴とする請求項1乃至8のいずれか1項に記載の表示装置。 - 前記第1絶縁層の厚さは、前記第2絶縁層の厚さより厚い、
ことを特徴とする請求項1乃至11のいずれか1項に記載の表示装置。 - 前記絶縁膜は、前記第2絶縁層を被覆する第3絶縁層を含む、
ことを特徴とする請求項1乃至12のいずれか1項に記載の表示装置。 - 請求項1乃至13のいずれか1項に記載の表示装置と、
前記表示装置を制御する制御部と、
を備えることを特徴とする電子機器。 - 第1電極と、第2電極と、前記第1電極と前記第2電極との間に配置された有機層と、を有する表示装置を製造する製造方法であって、
前記第1電極の各々の少なくとも側面を覆うように絶縁膜を形成する工程を含み、
前記絶縁膜を形成する工程は、前記絶縁膜の一部を形成する第1工程と、前記第1工程の後、堆積作用とスパッタリング作用とが競合する条件で前記絶縁膜の他の一部を形成する第2工程と、を含み、
前記第1工程におけるスパッタリング作用は、前記第2工程におけるスパッタリング作用よりも弱い、
ことを特徴とする製造方法。 - 第1電極と、第2電極と、前記第1電極と前記第2電極との間に配置された有機層と、を有する表示装置を製造する製造方法であって、
前記第1電極の各々の少なくとも側面を覆うように絶縁膜を形成する工程を含み、
前記絶縁膜を形成する工程は、前記絶縁膜の一部をCVD装置内で形成する第1工程と、前記第1工程の後、前記絶縁膜の他の一部を高密度プラズマCVD装置内で形成する第2工程と、を含む、
ことを特徴とする製造方法。 - 前記第1工程では、堆積作用とスパッタリング作用とが競合する条件で前記絶縁膜の前記一部が形成される、
ことを特徴とする請求項15又は16に記載の製造方法。 - 前記第1工程では、前記第1電極を有する構造体を保持する基板ホルダに備えられたバイアス電極に第1バイアスパワーが供給されながら前記絶縁膜の前記一部が形成され、前記第2工程では、バイアス電極に第2バイアスパワーが供給されながら前記絶縁膜の前記他の一部が形成され、
前記第1バイアスパワーは、前記第2バイアスパワーより小さい、
ことを特徴とする請求項15乃至17のいずれか1項に記載の製造方法。 - 前記第1工程におけるイオン密度は、前記第2工程におけるイオン密度より小さい、
ことを特徴とする請求項15乃至18のいずれか1項に記載の製造方法。 - 前記第1工程において成膜チャンバーに供給されるArガスの流量は、前記第2工程において前記成膜チャンバーに供給されるArガスの流量より小さい、
ことを特徴とする請求項15乃至19のいずれか1項に記載の製造方法。 - 前記第1工程では、平行平板型プラズマCVD法が使用され、前記第2工程では、高密度プラズマCVD法が使用される、
ことを特徴とする請求項15に記載の製造方法。 - 前記CVD装置は、平行平板型プラズマCVD装置である、
ことを特徴とする請求項16に記載の製造方法。 - 前記第1工程では、前記絶縁膜の前記一部が400℃以下の温度で形成される、
ことを特徴とする請求項15乃至22のいずれか1項に記載の製造方法。 - 前記絶縁膜のうち前記第1工程において形成される部分の傾斜は、前記絶縁膜のうち前記第2工程において形成される部分の傾斜より大きい、
ことを特徴とする請求項15乃至23のいずれか1項に記載の製造方法。
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