JP6993569B2 - レギュレータ回路および半導体装置並びに電源装置 - Google Patents

レギュレータ回路および半導体装置並びに電源装置 Download PDF

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Publication number
JP6993569B2
JP6993569B2 JP2017237341A JP2017237341A JP6993569B2 JP 6993569 B2 JP6993569 B2 JP 6993569B2 JP 2017237341 A JP2017237341 A JP 2017237341A JP 2017237341 A JP2017237341 A JP 2017237341A JP 6993569 B2 JP6993569 B2 JP 6993569B2
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current
circuit
mos transistor
output
stage
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JP2017237341A
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Japanese (ja)
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JP2019105954A (ja
Inventor
康平 櫻井
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Mitsumi Electric Co Ltd
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Mitsumi Electric Co Ltd
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Application filed by Mitsumi Electric Co Ltd filed Critical Mitsumi Electric Co Ltd
Priority to JP2017237341A priority Critical patent/JP6993569B2/ja
Priority to EP18210415.8A priority patent/EP3499335B1/fr
Priority to CN201811490199.5A priority patent/CN109917846B/zh
Priority to US16/212,491 priority patent/US20190179352A1/en
Publication of JP2019105954A publication Critical patent/JP2019105954A/ja
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Publication of JP6993569B2 publication Critical patent/JP6993569B2/ja
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
JP2017237341A 2017-12-12 2017-12-12 レギュレータ回路および半導体装置並びに電源装置 Active JP6993569B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017237341A JP6993569B2 (ja) 2017-12-12 2017-12-12 レギュレータ回路および半導体装置並びに電源装置
EP18210415.8A EP3499335B1 (fr) 2017-12-12 2018-12-05 Circuit de régulation et dispositif à semiconducteur et alimentation électrique
CN201811490199.5A CN109917846B (zh) 2017-12-12 2018-12-06 稳压电路、半导体装置以及电源装置
US16/212,491 US20190179352A1 (en) 2017-12-12 2018-12-06 Regulator circuit and semiconductor device, and power supply

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017237341A JP6993569B2 (ja) 2017-12-12 2017-12-12 レギュレータ回路および半導体装置並びに電源装置

Publications (2)

Publication Number Publication Date
JP2019105954A JP2019105954A (ja) 2019-06-27
JP6993569B2 true JP6993569B2 (ja) 2022-01-13

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JP2017237341A Active JP6993569B2 (ja) 2017-12-12 2017-12-12 レギュレータ回路および半導体装置並びに電源装置

Country Status (4)

Country Link
US (1) US20190179352A1 (fr)
EP (1) EP3499335B1 (fr)
JP (1) JP6993569B2 (fr)
CN (1) CN109917846B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7199330B2 (ja) * 2019-09-19 2023-01-05 株式会社東芝 レギュレータ回路
US11735902B2 (en) * 2020-03-24 2023-08-22 Analog Devices International Unlimited Company Bipolar junction transistor heater circuit
JP2022044215A (ja) 2020-09-07 2022-03-17 ミツミ電機株式会社 電源用半導体集積回路
JP2022044133A (ja) 2020-09-07 2022-03-17 ミツミ電機株式会社 電源用半導体集積回路
CN114265463A (zh) * 2021-12-21 2022-04-01 广州众诺电子技术有限公司 低压差稳压电路、设备、芯片和控制芯片输出电压的方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
US20020130646A1 (en) 2001-01-26 2002-09-19 Zadeh Ali Enayat Linear voltage regulator using adaptive biasing
JP2002268758A (ja) 2001-03-08 2002-09-20 Ricoh Co Ltd ボルテージレギュレータ
JP2003233429A (ja) 2002-02-08 2003-08-22 Hitachi Ltd 電源回路及びバイアス回路
US20100097867A1 (en) 2008-10-22 2010-04-22 Samsung Electronics Co., Ltd. Internal source voltage generating circuit of semiconductor memory device
US20120161734A1 (en) 2010-12-23 2012-06-28 Winbond Electronics Corp. Low drop out voltage regulato

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JP3732884B2 (ja) * 1996-04-22 2006-01-11 株式会社ルネサステクノロジ 内部電源電圧発生回路、内部電圧発生回路および半導体装置
US6509722B2 (en) * 2001-05-01 2003-01-21 Agere Systems Inc. Dynamic input stage biasing for low quiescent current amplifiers
JP4732617B2 (ja) * 2001-06-08 2011-07-27 セイコーインスツル株式会社 ボルテージ・レギュレータ
JP2003177829A (ja) 2001-12-10 2003-06-27 Fuji Electric Co Ltd レギュレータ回路
JP3993473B2 (ja) * 2002-06-20 2007-10-17 株式会社ルネサステクノロジ 半導体集積回路装置
US7095257B2 (en) * 2004-05-07 2006-08-22 Sige Semiconductor (U.S.), Corp. Fast low drop out (LDO) PFET regulator circuit
JP2006127225A (ja) * 2004-10-29 2006-05-18 Torex Device Co Ltd 電源回路
JP2006318327A (ja) * 2005-05-16 2006-11-24 Fuji Electric Device Technology Co Ltd 差動増幅回路およびシリーズレギュレータ
JP5407510B2 (ja) * 2008-08-29 2014-02-05 株式会社リコー 定電圧回路装置
JP5818761B2 (ja) 2012-09-14 2015-11-18 株式会社東芝 ボルテージレギュレータ
US9590504B2 (en) * 2014-09-30 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Flipped gate current reference and method of using

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020130646A1 (en) 2001-01-26 2002-09-19 Zadeh Ali Enayat Linear voltage regulator using adaptive biasing
JP2002268758A (ja) 2001-03-08 2002-09-20 Ricoh Co Ltd ボルテージレギュレータ
JP2003233429A (ja) 2002-02-08 2003-08-22 Hitachi Ltd 電源回路及びバイアス回路
US20100097867A1 (en) 2008-10-22 2010-04-22 Samsung Electronics Co., Ltd. Internal source voltage generating circuit of semiconductor memory device
US20120161734A1 (en) 2010-12-23 2012-06-28 Winbond Electronics Corp. Low drop out voltage regulato

Also Published As

Publication number Publication date
US20190179352A1 (en) 2019-06-13
CN109917846A (zh) 2019-06-21
EP3499335B1 (fr) 2021-04-14
EP3499335A1 (fr) 2019-06-19
JP2019105954A (ja) 2019-06-27
CN109917846B (zh) 2022-01-04

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