JP6990265B2 - 画像表示素子 - Google Patents
画像表示素子 Download PDFInfo
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- JP6990265B2 JP6990265B2 JP2020032674A JP2020032674A JP6990265B2 JP 6990265 B2 JP6990265 B2 JP 6990265B2 JP 2020032674 A JP2020032674 A JP 2020032674A JP 2020032674 A JP2020032674 A JP 2020032674A JP 6990265 B2 JP6990265 B2 JP 6990265B2
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- 239000010410 layer Substances 0.000 claims description 183
- 238000006243 chemical reaction Methods 0.000 claims description 165
- 239000000463 material Substances 0.000 claims description 58
- 239000002346 layers by function Substances 0.000 claims description 40
- 238000001579 optical reflectometry Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 24
- 238000000926 separation method Methods 0.000 description 16
- 238000002161 passivation Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 230000005284 excitation Effects 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
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- H01L33/52—Encapsulations
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Description
以下、本発明の実施形態1に係る画像表示素子200について、詳細に説明する。図1は、実施形態1に係る画像表示素子200の断面図である。図2は、画像表示素子200の上面図である。図1の断面図は、図2に示したY-Y‘線での画像表示素子200の断面図である。
図1に示すように、画像表示素子200は、複数のマイクロLED素子100を光源として備えている。画像表示素子200は、画素領域1と、共通接続領域2と、ダミー領域3と、外周部4と、を含んでいる。
青サブ画素6は、共通N電極56の上に散乱粒子を含む透明樹脂パターンからなる散乱材21を有している。青サブ画素6は、マイクロLED素子100Bが発する青色光を、散乱材21の散乱粒子により放射方向を広げ、波長変換すること無く、そのまま外部へ放出する。
本発明の実施形態2について、以下に説明する。なお、説明の便宜上、上記実施形態1にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。
本発明の実施形態3について、以下に説明する。なお、説明の便宜上、上記実施形態2にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。
本発明の実施形態4について、以下に説明する。なお、説明の便宜上、上記実施形態1、2、3にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。
本発明の実施形態5について、以下に説明する。なお、説明の便宜上、上記実施形態1~3にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。
本発明の実施形態6について、以下に説明する。なお、説明の便宜上、上記実施形態1~5にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。
本発明の実施形態7について、以下に説明する。なお、説明の便宜上、上記実施形態1~6にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。
本発明の実施形態8について、以下に説明する。なお、説明の便宜上、上記実施形態1~7にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。
本発明の実施形態9について、以下に説明する。なお、説明の便宜上、上記実施形態1~8にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。
本発明の実施形態10について、以下に説明する。なお、説明の便宜上、上記実施形態1~9にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。
本発明の実施形態11について、以下に説明する。なお、説明の便宜上、上記実施形態1~10にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。
図13は、実施形態11に係る画像表示素子200jの変形例の断面図である。図13に示すように、画像表示素子200kは、青サブ画素6に当たる部分に、黄色反射層40、および黄色波長変換部60ではなく、散乱材21が設けられている構成であってもよい。なお、この場合には、青サブ画素6には、青カラーフィルタ31は形成されない。
6、7、8 サブ画素
21a 青変換部(波長変換層)
22 赤色変換部(波長変換層)
23 緑色変換部(波長変換層)
25、25B 青反射層(第1の機能層)
28G 緑反射層(第2の機能層)
28R 赤反射層(第2の機能層)
25UV 紫外反射層(第1の機能層)
26 パッシベーション(第2の膜)
27 パッシベーション(第1の膜)
28 赤・緑反射層(第2の機能層)
30 分離層a
60 黄色波長変換部(波長変換層)
40 黄色反射層(第1の機能層)
50、50h 駆動回路基板
100、100B、100R、100G、100h、100Bh、100Rh、100Gh、100uv、100Buv、100Ruv、100Guv マイクロLED素子(LED素子)
200、200a、200b、200c、200d、200e、200f、200g、200h、200i、200j、200k 画像表示素子
Claims (7)
- 駆動回路基板に実装された、光源光を発する複数のLED素子と、
前記複数のLED素子の前記駆動回路基板とは反対側に積層され、前記複数のLED素子毎に区切られており、前記複数のLED素子が発した前記光源光を長波長光に変換して、前記長波長光を前記駆動回路基板とは反対側に射出する波長変換層と、
前記波長変換層の、前記長波長光の光射出面側に設けられ、前記光源光を反射し、前記
長波長光を透過する第1の機能層と、
区切られた波長変換層の間に設けられ、光反射性を有する遮光部材層と、
前記波長変換層の、前記光源光の光入射面側に設けられ、前記長波長光を反射する第2の機能層と、
を備え、
前記第2の機能層は、前記複数のLED素子毎に区切られていることを特徴とする画像表示素子。 - 前記第1の機能層は、前記複数のLED素子毎に区切られていることを特徴とする請求項1に記載の画像表示素子。
- 前記第1の機能層の光射出面は、耐湿性を有する第1の膜で覆われていることを特徴とする請求項1に記載の画像表示素子。
- 前記第2の機能層の光射出面は、耐湿性を有する第2の膜で覆われていることを特徴とする請求項1に記載の画像表示素子。
- 前記複数のLED素子毎に区切られている前記第1の機能層の間が、前記第1の機能層とは異なる第1の充填材料で充填されていることを特徴とする請求項2に記載の画像表示素子。
- 前記複数のLED素子毎に区切られている前記第2の機能層の間が、前記第2の機能層とは異なる第2の充填材料で充填されていることを特徴とする請求項4に記載の画像表示素子。
- 駆動回路基板に実装された、光源光を発する複数のLED素子と、
前記複数のLED素子の前記駆動回路基板とは反対側に積層され、前記複数のLED素子毎に区切られており、前記複数のLED素子が発した前記光源光を長波長光に変換して、前記長波長光を前記駆動回路基板とは反対側に射出する波長変換層と、
前記波長変換層の、前記長波長光の光射出面側に設けられ、前記光源光を反射し、前記
長波長光を透過する第1の機能層と、
区切られた波長変換層の間に設けられ、光反射性を有する遮光部材層と、
前記波長変換層の、前記光源光の光入射面側に設けられ、前記長波長光を反射する第2の機能層と、
を備えており、
前記波長変換層は、順テーパー形状であり、
前記第1の機能層は、前記複数のLED素子毎に区切られ、
前記第2の機能層は、前記複数のLED素子毎に区切られていることを特徴とする画像表示素子。
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TWI786470B (zh) | 2020-10-14 | 2022-12-11 | 中強光電股份有限公司 | 顯示單元以及投影裝置 |
CN114650401B (zh) | 2020-12-21 | 2024-07-19 | 中强光电股份有限公司 | 投影装置 |
CN114822281A (zh) * | 2021-01-28 | 2022-07-29 | 中强光电股份有限公司 | 显示装置、波长转换模块及其制造方法 |
CN113629174B (zh) * | 2021-07-30 | 2023-07-25 | 深圳市华星光电半导体显示技术有限公司 | 显示面板的制备方法、显示面板及显示装置 |
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