JP6985031B2 - Ledディスプレーパネルの製造方法 - Google Patents
Ledディスプレーパネルの製造方法 Download PDFInfo
- Publication number
- JP6985031B2 JP6985031B2 JP2017099602A JP2017099602A JP6985031B2 JP 6985031 B2 JP6985031 B2 JP 6985031B2 JP 2017099602 A JP2017099602 A JP 2017099602A JP 2017099602 A JP2017099602 A JP 2017099602A JP 6985031 B2 JP6985031 B2 JP 6985031B2
- Authority
- JP
- Japan
- Prior art keywords
- led
- display substrate
- electrode
- wafer
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 655
- 235000012431 wafers Nutrition 0.000 claims description 564
- 238000000407 epitaxy Methods 0.000 claims description 47
- 230000001678 irradiating effect Effects 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 34
- 238000002360 preparation method Methods 0.000 claims description 17
- 238000010586 diagram Methods 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- 230000002745 absorbent Effects 0.000 description 12
- 239000002250 absorbent Substances 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 239000003086 colorant Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
- Laser Beam Processing (AREA)
- Led Devices (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017099602A JP6985031B2 (ja) | 2017-05-19 | 2017-05-19 | Ledディスプレーパネルの製造方法 |
TW107112490A TWI776880B (zh) | 2017-05-19 | 2018-04-12 | Led顯示器面板的製造方法 |
CN201810453947.6A CN108962916B (zh) | 2017-05-19 | 2018-05-14 | Led显示面板的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017099602A JP6985031B2 (ja) | 2017-05-19 | 2017-05-19 | Ledディスプレーパネルの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018194718A JP2018194718A (ja) | 2018-12-06 |
JP6985031B2 true JP6985031B2 (ja) | 2021-12-22 |
Family
ID=64499207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017099602A Active JP6985031B2 (ja) | 2017-05-19 | 2017-05-19 | Ledディスプレーパネルの製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6985031B2 (zh) |
CN (1) | CN108962916B (zh) |
TW (1) | TWI776880B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7333192B2 (ja) * | 2019-04-23 | 2023-08-24 | 株式会社ディスコ | 移設方法 |
JP7199307B2 (ja) * | 2019-05-24 | 2023-01-05 | 株式会社ディスコ | 移設方法 |
JP2021012936A (ja) * | 2019-07-05 | 2021-02-04 | 株式会社ディスコ | 光デバイスの移設方法 |
JP7289744B2 (ja) * | 2019-07-11 | 2023-06-12 | 株式会社ジャパンディスプレイ | 表示装置、及びその製造方法 |
TWI727428B (zh) * | 2019-09-20 | 2021-05-11 | 東貝光電科技股份有限公司 | 微型led面板之製造方法及其微型led面板 |
JP2022164272A (ja) | 2021-04-16 | 2022-10-27 | 株式会社ディスコ | Ledディスプレイパネルの製造方法 |
JP2023109616A (ja) | 2022-01-27 | 2023-08-08 | 株式会社ディスコ | ウエーハの製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60103328A (ja) * | 1983-11-10 | 1985-06-07 | Sanyo Electric Co Ltd | 液晶表示板の電極接続方法 |
JP2002314053A (ja) * | 2001-04-19 | 2002-10-25 | Sony Corp | チップ部品の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
FI123860B (fi) * | 2010-05-18 | 2013-11-29 | Corelase Oy | Menetelmä substraattien tiivistämiseksi ja kontaktoimiseksi laservalon avulla ja elektroniikkamoduli |
DE112012004373T5 (de) * | 2011-10-18 | 2014-07-10 | Fuji Electric Co., Ltd | Verfahren zur trennung eines trägersubstrats von einem festphasengebundenen wafer und verfahren zur herstellung einer halbleitervorrichtung |
JP5878330B2 (ja) * | 2011-10-18 | 2016-03-08 | 株式会社ディスコ | レーザー光線の出力設定方法およびレーザー加工装置 |
US9159700B2 (en) * | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
JP2015144192A (ja) * | 2014-01-31 | 2015-08-06 | 株式会社ディスコ | リフトオフ方法 |
WO2016100657A2 (en) * | 2014-12-19 | 2016-06-23 | Glo Ab | Method of making a light emitting diode array on a backplane |
US10224308B2 (en) * | 2015-07-14 | 2019-03-05 | Goertek, Inc. | Transferring method, manufacturing method, device and electronic apparatus of micro-LED |
TWI756384B (zh) * | 2017-03-16 | 2022-03-01 | 美商康寧公司 | 用於大量轉移微型led的方法及製程 |
-
2017
- 2017-05-19 JP JP2017099602A patent/JP6985031B2/ja active Active
-
2018
- 2018-04-12 TW TW107112490A patent/TWI776880B/zh active
- 2018-05-14 CN CN201810453947.6A patent/CN108962916B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN108962916B (zh) | 2024-03-01 |
JP2018194718A (ja) | 2018-12-06 |
TWI776880B (zh) | 2022-09-11 |
CN108962916A (zh) | 2018-12-07 |
TW201901255A (zh) | 2019-01-01 |
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