JP6974169B2 - 複数の加熱ゾーンを有する基板支持体 - Google Patents

複数の加熱ゾーンを有する基板支持体 Download PDF

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Publication number
JP6974169B2
JP6974169B2 JP2017534992A JP2017534992A JP6974169B2 JP 6974169 B2 JP6974169 B2 JP 6974169B2 JP 2017534992 A JP2017534992 A JP 2017534992A JP 2017534992 A JP2017534992 A JP 2017534992A JP 6974169 B2 JP6974169 B2 JP 6974169B2
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Prior art keywords
vacuum channel
heating
heater
pitch
circular
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Japanese (ja)
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JP2018505551A5 (enExample
JP2018505551A (ja
Inventor
トモハル マツシタ
ジャレパリー ラヴィ
チェン−ション ツァイ
アラヴィンド カマス
シャオション ユアン
マンジュナサ コッパ
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Applied Materials Inc
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Applied Materials Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/037Heaters with zones of different power density

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
JP2017534992A 2014-12-31 2015-10-22 複数の加熱ゾーンを有する基板支持体 Active JP6974169B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462098887P 2014-12-31 2014-12-31
US62/098,887 2014-12-31
US14/634,711 US9888528B2 (en) 2014-12-31 2015-02-27 Substrate support with multiple heating zones
US14/634,711 2015-02-27
PCT/US2015/056934 WO2016109008A1 (en) 2014-12-31 2015-10-22 Substrate support with multiple heating zones

Publications (3)

Publication Number Publication Date
JP2018505551A JP2018505551A (ja) 2018-02-22
JP2018505551A5 JP2018505551A5 (enExample) 2018-12-06
JP6974169B2 true JP6974169B2 (ja) 2021-12-01

Family

ID=56166038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017534992A Active JP6974169B2 (ja) 2014-12-31 2015-10-22 複数の加熱ゾーンを有する基板支持体

Country Status (6)

Country Link
US (1) US9888528B2 (enExample)
JP (1) JP6974169B2 (enExample)
KR (1) KR102425944B1 (enExample)
CN (2) CN107112262B (enExample)
TW (1) TWI682489B (enExample)
WO (1) WO2016109008A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Screenホールディングス 熱処理装置
US10468290B2 (en) * 2016-11-02 2019-11-05 Ultratech, Inc. Wafer chuck apparatus with micro-channel regions
US11598003B2 (en) 2017-09-12 2023-03-07 Applied Materials, Inc. Substrate processing chamber having heated showerhead assembly
US11330673B2 (en) * 2017-11-20 2022-05-10 Applied Materials, Inc. Heated substrate support
SG11202007857XA (en) 2018-02-09 2020-09-29 Applied Materials Inc Semiconductor processing apparatus having improved temperature control
US10910243B2 (en) 2018-08-31 2021-02-02 Applied Materials, Inc. Thermal management system
CN113169109B (zh) * 2018-11-30 2025-07-01 朗姆研究公司 用于增进热均匀性的具有多层加热器的陶瓷基座
US11562913B2 (en) * 2019-04-25 2023-01-24 Watlow Electric Manufacturing Company Multi-zone azimuthal heater
WO2020263939A1 (en) * 2019-06-25 2020-12-30 Applied Materials, Inc. Dual-function wafer backside pressure control and edge purge
US20210035851A1 (en) * 2019-07-30 2021-02-04 Applied Materials, Inc. Low contact area substrate support for etching chamber
CN114514602B (zh) * 2019-09-27 2025-11-07 朗姆研究公司 用于影响衬底支撑件的温度分布轮廓的可调式和不可调式热屏
JP7407752B2 (ja) * 2021-02-05 2024-01-04 日本碍子株式会社 ウエハ支持台
US20220367236A1 (en) * 2021-05-16 2022-11-17 Applied Materials, Inc. Heater pedestal with improved uniformity
EP4177031B1 (de) * 2021-06-14 2024-07-24 MULTIVAC Sepp Haggenmüller SE & Co. KG Arbeitsstation für folienverarbeitende verpackungsmaschine
USD1071886S1 (en) * 2022-01-20 2025-04-22 Applied Materials, Inc. Substrate support for a substrate processing chamber
TW202349558A (zh) * 2022-04-28 2023-12-16 荷蘭商Asm Ip私人控股有限公司 靜電卡盤台座加熱器及用於選擇性地夾持及加熱基材之設備
JP2025534167A (ja) * 2022-10-24 2025-10-14 ラム リサーチ コーポレーション 処理ツールにおける熱流制御
JP2024155101A (ja) 2023-04-20 2024-10-31 住友電気工業株式会社 ウエハ保持体
WO2024257286A1 (ja) 2023-06-14 2024-12-19 住友電気工業株式会社 ウエハ保持台、および半導体処理装置
KR102731017B1 (ko) 2023-10-30 2024-11-19 주식회사 미코세라믹스 세라믹 서셉터

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128515A (en) * 1990-05-21 1992-07-07 Tokyo Electron Sagami Limited Heating apparatus
JP2527836B2 (ja) * 1990-08-17 1996-08-28 日本碍子株式会社 半導体ウエハ―加熱装置
JP3210051B2 (ja) * 1992-01-16 2001-09-17 株式会社東芝 気相成長装置
US6001183A (en) * 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6617553B2 (en) * 1999-05-19 2003-09-09 Applied Materials, Inc. Multi-zone resistive heater
JP2002100460A (ja) * 2000-09-22 2002-04-05 Ibiden Co Ltd セラミックヒータおよびホットプレートユニット
JP4660926B2 (ja) 2001-01-09 2011-03-30 東京エレクトロン株式会社 枚葉式の処理装置
JP3642746B2 (ja) * 2001-06-21 2005-04-27 日本発条株式会社 セラミックスヒータ
US20020195201A1 (en) * 2001-06-25 2002-12-26 Emanuel Beer Apparatus and method for thermally isolating a heat chamber
JP3897563B2 (ja) * 2001-10-24 2007-03-28 日本碍子株式会社 加熱装置
JP2005136104A (ja) * 2003-10-29 2005-05-26 Ngk Spark Plug Co Ltd 静電チャック
JP4642358B2 (ja) * 2004-01-13 2011-03-02 株式会社日立ハイテクノロジーズ ウエハ載置用電極
JP3769583B1 (ja) * 2004-07-09 2006-04-26 積水化学工業株式会社 基材処理装置及び方法
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US7705276B2 (en) * 2006-09-14 2010-04-27 Momentive Performance Materials Inc. Heater, apparatus, and associated method
JP2008207198A (ja) * 2007-02-26 2008-09-11 Matsushita Electric Ind Co Ltd 金型ガイド機構および金型
JP2009054871A (ja) 2007-08-28 2009-03-12 Tokyo Electron Ltd 載置台構造及び処理装置
JP4913695B2 (ja) * 2007-09-20 2012-04-11 東京エレクトロン株式会社 基板処理装置及びそれに用いる基板載置台
US20090274590A1 (en) * 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed
US8274017B2 (en) * 2009-12-18 2012-09-25 Applied Materials, Inc. Multifunctional heater/chiller pedestal for wide range wafer temperature control
JP2012028428A (ja) * 2010-07-21 2012-02-09 Tokyo Electron Ltd 載置台構造及び処理装置
US10242890B2 (en) * 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
KR101343556B1 (ko) * 2012-05-18 2013-12-19 주식회사 케이에스엠컴포넌트 2차원적으로 배선된 열선을 포함하는 세라믹 히터
US9538583B2 (en) 2013-01-16 2017-01-03 Applied Materials, Inc. Substrate support with switchable multizone heater
US9853579B2 (en) 2013-12-18 2017-12-26 Applied Materials, Inc. Rotatable heated electrostatic chuck

Also Published As

Publication number Publication date
CN107112262A (zh) 2017-08-29
WO2016109008A1 (en) 2016-07-07
US20160192444A1 (en) 2016-06-30
JP2018505551A (ja) 2018-02-22
CN109616428B (zh) 2023-02-03
KR102425944B1 (ko) 2022-07-26
CN109616428A (zh) 2019-04-12
US9888528B2 (en) 2018-02-06
TW201624607A (zh) 2016-07-01
CN107112262B (zh) 2021-09-03
TWI682489B (zh) 2020-01-11
KR20170101973A (ko) 2017-09-06

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