TWI682489B - 帶有多個加熱區的基板支撐件 - Google Patents

帶有多個加熱區的基板支撐件 Download PDF

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Publication number
TWI682489B
TWI682489B TW104134575A TW104134575A TWI682489B TW I682489 B TWI682489 B TW I682489B TW 104134575 A TW104134575 A TW 104134575A TW 104134575 A TW104134575 A TW 104134575A TW I682489 B TWI682489 B TW I682489B
Authority
TW
Taiwan
Prior art keywords
heating
heater
heating zone
vacuum channel
channels
Prior art date
Application number
TW104134575A
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English (en)
Chinese (zh)
Other versions
TW201624607A (zh
Inventor
松下智治
拉菲傑立巴利
蔡振雄
卡曼司亞拉文德
袁小雄
高帕曼裘那薩
Original Assignee
美商應用材料股份有限公司
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Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201624607A publication Critical patent/TW201624607A/zh
Application granted granted Critical
Publication of TWI682489B publication Critical patent/TWI682489B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/037—Heaters with zones of different power density

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
TW104134575A 2014-12-31 2015-10-21 帶有多個加熱區的基板支撐件 TWI682489B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462098887P 2014-12-31 2014-12-31
US62/098,887 2014-12-31
US14/634,711 US9888528B2 (en) 2014-12-31 2015-02-27 Substrate support with multiple heating zones
US14/634,711 2015-02-27

Publications (2)

Publication Number Publication Date
TW201624607A TW201624607A (zh) 2016-07-01
TWI682489B true TWI682489B (zh) 2020-01-11

Family

ID=56166038

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104134575A TWI682489B (zh) 2014-12-31 2015-10-21 帶有多個加熱區的基板支撐件

Country Status (6)

Country Link
US (1) US9888528B2 (enExample)
JP (1) JP6974169B2 (enExample)
KR (1) KR102425944B1 (enExample)
CN (2) CN107112262B (enExample)
TW (1) TWI682489B (enExample)
WO (1) WO2016109008A1 (enExample)

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JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US10468290B2 (en) * 2016-11-02 2019-11-05 Ultratech, Inc. Wafer chuck apparatus with micro-channel regions
US11598003B2 (en) 2017-09-12 2023-03-07 Applied Materials, Inc. Substrate processing chamber having heated showerhead assembly
US11330673B2 (en) * 2017-11-20 2022-05-10 Applied Materials, Inc. Heated substrate support
SG11202007857XA (en) 2018-02-09 2020-09-29 Applied Materials Inc Semiconductor processing apparatus having improved temperature control
US10910243B2 (en) 2018-08-31 2021-02-02 Applied Materials, Inc. Thermal management system
CN113169109B (zh) * 2018-11-30 2025-07-01 朗姆研究公司 用于增进热均匀性的具有多层加热器的陶瓷基座
US11562913B2 (en) * 2019-04-25 2023-01-24 Watlow Electric Manufacturing Company Multi-zone azimuthal heater
WO2020263939A1 (en) * 2019-06-25 2020-12-30 Applied Materials, Inc. Dual-function wafer backside pressure control and edge purge
US20210035851A1 (en) * 2019-07-30 2021-02-04 Applied Materials, Inc. Low contact area substrate support for etching chamber
CN114514602B (zh) * 2019-09-27 2025-11-07 朗姆研究公司 用于影响衬底支撑件的温度分布轮廓的可调式和不可调式热屏
JP7407752B2 (ja) * 2021-02-05 2024-01-04 日本碍子株式会社 ウエハ支持台
US20220367236A1 (en) * 2021-05-16 2022-11-17 Applied Materials, Inc. Heater pedestal with improved uniformity
EP4177031B1 (de) * 2021-06-14 2024-07-24 MULTIVAC Sepp Haggenmüller SE & Co. KG Arbeitsstation für folienverarbeitende verpackungsmaschine
USD1071886S1 (en) * 2022-01-20 2025-04-22 Applied Materials, Inc. Substrate support for a substrate processing chamber
TW202349558A (zh) * 2022-04-28 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 靜電卡盤台座加熱器及用於選擇性地夾持及加熱基材之設備
JP2025534167A (ja) * 2022-10-24 2025-10-14 ラム リサーチ コーポレーション 処理ツールにおける熱流制御
JP2024155101A (ja) 2023-04-20 2024-10-31 住友電気工業株式会社 ウエハ保持体
WO2024257286A1 (ja) 2023-06-14 2024-12-19 住友電気工業株式会社 ウエハ保持台、および半導体処理装置
KR102731017B1 (ko) 2023-10-30 2024-11-19 주식회사 미코세라믹스 세라믹 서셉터

Citations (3)

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Publication number Priority date Publication date Assignee Title
US5128515A (en) * 1990-05-21 1992-07-07 Tokyo Electron Sagami Limited Heating apparatus
US20030062359A1 (en) * 1999-05-19 2003-04-03 Henry Ho Multi-zone resistive heater
US20110147363A1 (en) * 2009-12-18 2011-06-23 Applied Materials, Inc. Multifunctional heater/chiller pedestal for wide range wafer temperature control

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JP2527836B2 (ja) * 1990-08-17 1996-08-28 日本碍子株式会社 半導体ウエハ―加熱装置
JP3210051B2 (ja) * 1992-01-16 2001-09-17 株式会社東芝 気相成長装置
US6001183A (en) * 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
JP2002100460A (ja) * 2000-09-22 2002-04-05 Ibiden Co Ltd セラミックヒータおよびホットプレートユニット
JP4660926B2 (ja) 2001-01-09 2011-03-30 東京エレクトロン株式会社 枚葉式の処理装置
JP3642746B2 (ja) * 2001-06-21 2005-04-27 日本発条株式会社 セラミックスヒータ
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JP4642358B2 (ja) * 2004-01-13 2011-03-02 株式会社日立ハイテクノロジーズ ウエハ載置用電極
JP3769583B1 (ja) * 2004-07-09 2006-04-26 積水化学工業株式会社 基材処理装置及び方法
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US7705276B2 (en) * 2006-09-14 2010-04-27 Momentive Performance Materials Inc. Heater, apparatus, and associated method
JP2008207198A (ja) * 2007-02-26 2008-09-11 Matsushita Electric Ind Co Ltd 金型ガイド機構および金型
JP2009054871A (ja) 2007-08-28 2009-03-12 Tokyo Electron Ltd 載置台構造及び処理装置
JP4913695B2 (ja) * 2007-09-20 2012-04-11 東京エレクトロン株式会社 基板処理装置及びそれに用いる基板載置台
US20090274590A1 (en) * 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed
JP2012028428A (ja) * 2010-07-21 2012-02-09 Tokyo Electron Ltd 載置台構造及び処理装置
US10242890B2 (en) * 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
KR101343556B1 (ko) * 2012-05-18 2013-12-19 주식회사 케이에스엠컴포넌트 2차원적으로 배선된 열선을 포함하는 세라믹 히터
US9538583B2 (en) 2013-01-16 2017-01-03 Applied Materials, Inc. Substrate support with switchable multizone heater
US9853579B2 (en) 2013-12-18 2017-12-26 Applied Materials, Inc. Rotatable heated electrostatic chuck

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128515A (en) * 1990-05-21 1992-07-07 Tokyo Electron Sagami Limited Heating apparatus
US20030062359A1 (en) * 1999-05-19 2003-04-03 Henry Ho Multi-zone resistive heater
US20110147363A1 (en) * 2009-12-18 2011-06-23 Applied Materials, Inc. Multifunctional heater/chiller pedestal for wide range wafer temperature control

Also Published As

Publication number Publication date
CN107112262A (zh) 2017-08-29
WO2016109008A1 (en) 2016-07-07
US20160192444A1 (en) 2016-06-30
JP2018505551A (ja) 2018-02-22
CN109616428B (zh) 2023-02-03
KR102425944B1 (ko) 2022-07-26
CN109616428A (zh) 2019-04-12
US9888528B2 (en) 2018-02-06
TW201624607A (zh) 2016-07-01
CN107112262B (zh) 2021-09-03
JP6974169B2 (ja) 2021-12-01
KR20170101973A (ko) 2017-09-06

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