JP6967213B2 - 結晶性酸化物半導体膜および半導体装置 - Google Patents

結晶性酸化物半導体膜および半導体装置 Download PDF

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JP6967213B2
JP6967213B2 JP2016078494A JP2016078494A JP6967213B2 JP 6967213 B2 JP6967213 B2 JP 6967213B2 JP 2016078494 A JP2016078494 A JP 2016078494A JP 2016078494 A JP2016078494 A JP 2016078494A JP 6967213 B2 JP6967213 B2 JP 6967213B2
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oxide semiconductor
crystalline oxide
plane
film
semiconductor film
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JP2016201540A (ja
JP2016201540A5 (enExample
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真也 織田
梨絵 徳田
俊実 人羅
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Flosfia Inc
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Flosfia Inc
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  • Chemical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Chemically Coating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016078494A 2015-04-10 2016-04-08 結晶性酸化物半導体膜および半導体装置 Active JP6967213B2 (ja)

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JP2015081301 2015-04-10

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JP2016201540A5 JP2016201540A5 (enExample) 2019-05-23
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2018084304A1 (ja) * 2016-11-07 2019-11-07 株式会社Ｆｌｏｓｆｉａ 結晶性酸化物半導体膜および半導体装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6945121B2 (ja) * 2015-09-30 2021-10-06 株式会社Flosfia 結晶性半導体膜および半導体装置
JP7166522B2 (ja) * 2017-08-21 2022-11-08 株式会社Flosfia 結晶膜の製造方法
JP2020011858A (ja) * 2018-07-17 2020-01-23 トヨタ自動車株式会社 成膜方法、及び、半導体装置の製造方法
JP7453607B2 (ja) * 2019-03-29 2024-03-21 株式会社Flosfia サーミスタならびにその製品およびシステム
CN114269972B (zh) * 2019-09-02 2024-09-20 日本碍子株式会社 半导体膜
JP7708348B2 (ja) * 2020-06-30 2025-07-15 株式会社Flosfia 結晶性酸化物膜および半導体装置

Family Cites Families (10)

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JP4083396B2 (ja) * 2000-07-10 2008-04-30 独立行政法人科学技術振興機構 紫外透明導電膜とその製造方法
US20120045661A1 (en) * 2010-08-19 2012-02-23 Raveen Kumaran Rare-earth-doped aluminum-gallium-oxide films in the corundum-phase and related methods
JP2013038394A (ja) * 2011-07-14 2013-02-21 Rohm Co Ltd 半導体レーザ素子
JP5793732B2 (ja) * 2011-07-27 2015-10-14 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP5948581B2 (ja) * 2011-09-08 2016-07-06 株式会社Flosfia Ｇａ２Ｏ３系半導体素子
US20140217470A1 (en) * 2011-09-08 2014-08-07 Tamura Corporation Ga2O3 SEMICONDUCTOR ELEMENT
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
JP5397794B1 (ja) * 2013-06-04 2014-01-22 Ｒｏｃａ株式会社 酸化物結晶薄膜の製造方法
JP5528612B1 (ja) * 2013-07-09 2014-06-25 Ｒｏｃａ株式会社 半導体装置
JP6152514B2 (ja) * 2013-10-17 2017-06-28 株式会社Flosfia 半導体装置及びその製造方法、並びに結晶及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2018084304A1 (ja) * 2016-11-07 2019-11-07 株式会社Ｆｌｏｓｆｉａ 結晶性酸化物半導体膜および半導体装置
JP7391290B2 (ja) 2016-11-07 2023-12-05 株式会社Flosfia 結晶性酸化物半導体膜および半導体装置

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JP2016201555A (ja) 2016-12-01
JP6701472B2 (ja) 2020-05-27
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