JP6960763B2 - 異なるヒータ配線材料を有する積層ヒータ - Google Patents

異なるヒータ配線材料を有する積層ヒータ Download PDF

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Publication number
JP6960763B2
JP6960763B2 JP2017093096A JP2017093096A JP6960763B2 JP 6960763 B2 JP6960763 B2 JP 6960763B2 JP 2017093096 A JP2017093096 A JP 2017093096A JP 2017093096 A JP2017093096 A JP 2017093096A JP 6960763 B2 JP6960763 B2 JP 6960763B2
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Japan
Prior art keywords
substrate support
heating
compartment
electrical connection
heating element
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Active
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JP2017093096A
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English (en)
Japanese (ja)
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JP2017216440A (ja
Inventor
ユマ・オークラ
ダレル・エ−ルリヒ
エリック・エー．・ペープ
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Lam Research Corp
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Lam Research Corp
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Publication date
Priority claimed from US15/586,178 external-priority patent/US10764966B2/en
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Publication of JP2017216440A publication Critical patent/JP2017216440A/ja
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Publication of JP6960763B2 publication Critical patent/JP6960763B2/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Surface Heating Bodies (AREA)
  • Resistance Heating (AREA)
JP2017093096A 2016-05-10 2017-05-09 異なるヒータ配線材料を有する積層ヒータ Active JP6960763B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201662334097P 2016-05-10 2016-05-10
US201662334084P 2016-05-10 2016-05-10
US62/334,084 2016-05-10
US62/334,097 2016-05-10
US15/586,178 US10764966B2 (en) 2016-05-10 2017-05-03 Laminated heater with different heater trace materials
US15/586,178 2017-05-03

Publications (2)

Publication Number Publication Date
JP2017216440A JP2017216440A (ja) 2017-12-07
JP6960763B2 true JP6960763B2 (ja) 2021-11-05

Family

ID=60338892

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2017093096A Active JP6960763B2 (ja) 2016-05-10 2017-05-09 異なるヒータ配線材料を有する積層ヒータ
JP2017093093A Active JP6907018B2 (ja) 2016-05-10 2017-05-09 積層ヒータとヒータ電圧入力との間の接続

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017093093A Active JP6907018B2 (ja) 2016-05-10 2017-05-09 積層ヒータとヒータ電圧入力との間の接続

Country Status (4)

Country Link
JP (2) JP6960763B2 (zh)
KR (2) KR102360248B1 (zh)
CN (2) CN107426837B (zh)
TW (2) TW201806441A (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7017957B2 (ja) * 2018-03-14 2022-02-09 日本特殊陶業株式会社 保持装置
WO2020010153A1 (en) * 2018-07-05 2020-01-09 Lam Research Corporation Dynamic temperature control of substrate support in substrate processing system
US11666170B2 (en) * 2019-02-08 2023-06-06 Lexmark International, Inc. Cooking device having a cooking vessel and a ceramic heater
KR102639158B1 (ko) * 2019-07-23 2024-02-22 삼성전자주식회사 웨이퍼 처리 장치 및 이를 이용한 웨이퍼 처리 방법
US11515190B2 (en) * 2019-08-27 2022-11-29 Watlow Electric Manufacturing Company Thermal diffuser for a semiconductor wafer holder
TWI710298B (zh) * 2019-11-06 2020-11-11 台灣愛司帝科技股份有限公司 具有加熱功能的轉接板以及電子裝置
CN114423101B (zh) * 2020-10-28 2024-01-09 汉达精密电子(昆山)有限公司 一种具有光罩板的红外加热装置

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* Cited by examiner, † Cited by third party
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JPH03240961A (ja) * 1990-02-19 1991-10-28 Toshiba Corp 基板加熱装置
JP3172327B2 (ja) 1993-05-12 2001-06-04 アルパイン株式会社 車載ナビゲーション装置
US6469283B1 (en) * 1999-03-04 2002-10-22 Applied Materials, Inc. Method and apparatus for reducing thermal gradients within a substrate support
JP3713220B2 (ja) * 2001-06-15 2005-11-09 日本特殊陶業株式会社 セラミックヒータ
WO2004030411A1 (ja) * 2002-09-27 2004-04-08 Sumitomo Electric Industries, Ltd. ウエハー保持体及び半導体製造装置
JP3918806B2 (ja) * 2003-11-20 2007-05-23 住友電気工業株式会社 被加熱物載置用ヒータ部材及び加熱処理装置
US20060000822A1 (en) * 2004-02-23 2006-01-05 Kyocera Corporation Ceramic heater, wafer heating device using thereof and method for manufacturing a semiconductor substrate
TWI281833B (en) * 2004-10-28 2007-05-21 Kyocera Corp Heater, wafer heating apparatus and method for manufacturing heater
DE102006002636B4 (de) * 2006-01-19 2009-10-22 Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg Tansparente Scheibe mit einem beheizbaren Schichtsystem
KR20080037879A (ko) * 2006-10-27 2008-05-02 주식회사 코미코 히터 및 이의 제조방법
JP5294570B2 (ja) * 2007-04-26 2013-09-18 株式会社小松製作所 基板温度制御装置用ステージ
JP4353289B2 (ja) * 2007-08-20 2009-10-28 セイコーエプソン株式会社 電子デバイス及び電子機器
JP2009087928A (ja) * 2007-09-13 2009-04-23 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP5368708B2 (ja) * 2008-01-18 2013-12-18 株式会社小松製作所 基板温度制御装置用ステージ
JP5163349B2 (ja) * 2008-08-01 2013-03-13 住友大阪セメント株式会社 静電チャック装置
KR101120599B1 (ko) * 2008-08-20 2012-03-09 주식회사 코미코 세라믹 히터, 이의 제조 방법 및 이를 포함하는 박막 증착 장치
US8637794B2 (en) * 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
JP5855402B2 (ja) * 2010-09-24 2016-02-09 日本碍子株式会社 サセプター及びその製法
JP3172327U (ja) * 2010-10-07 2011-12-15 日本碍子株式会社 半導体製造装置用部材
US8791392B2 (en) * 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) * 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US9307578B2 (en) * 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
BR112014004911A2 (pt) * 2011-08-30 2017-05-30 Watlow Electric Mfg sistema de matriz térmica
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JP6049509B2 (ja) * 2012-03-28 2016-12-21 日本碍子株式会社 セラミックヒーター、ヒーター電極及びセラミックヒーターの製法
JP6081292B2 (ja) * 2012-10-19 2017-02-15 東京エレクトロン株式会社 プラズマ処理装置
CA2843276A1 (en) * 2013-02-20 2014-08-20 Hartford Steam Boiler Inspection And Insurance Company Dynamic outlier bias reduction system and method
CN105408993A (zh) * 2013-08-06 2016-03-16 应用材料公司 局部加热的多区域基板支撑件

Also Published As

Publication number Publication date
JP2017216440A (ja) 2017-12-07
KR102329513B1 (ko) 2021-11-23
TWI744323B (zh) 2021-11-01
KR20170126802A (ko) 2017-11-20
CN107426837A (zh) 2017-12-01
TW201806441A (zh) 2018-02-16
KR20170126803A (ko) 2017-11-20
CN107426837B (zh) 2021-09-21
KR102360248B1 (ko) 2022-02-07
JP2017216439A (ja) 2017-12-07
TW201802947A (zh) 2018-01-16
CN107393847A (zh) 2017-11-24
JP6907018B2 (ja) 2021-07-21
CN107393847B (zh) 2024-02-02

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