JP6956288B2 - 基板処理方法、プラズマ処理装置、及びエッチングガス組成物 - Google Patents

基板処理方法、プラズマ処理装置、及びエッチングガス組成物 Download PDF

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JP6956288B2
JP6956288B2 JP2021046015A JP2021046015A JP6956288B2 JP 6956288 B2 JP6956288 B2 JP 6956288B2 JP 2021046015 A JP2021046015 A JP 2021046015A JP 2021046015 A JP2021046015 A JP 2021046015A JP 6956288 B2 JP6956288 B2 JP 6956288B2
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gas
film
substrate
group
plasma
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JP2021174985A (ja
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隆太郎 須田
幕樹 戸村
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority claimed from US17/092,376 external-priority patent/US11342194B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to TW110110808A priority Critical patent/TWI899193B/zh
Priority to SG10202103960VA priority patent/SG10202103960VA/en
Priority to EP24175547.9A priority patent/EP4428898A3/en
Priority to EP21169517.6A priority patent/EP3905307B1/en
Priority to KR1020210051545A priority patent/KR102459129B1/ko
Priority to CN202110435309.3A priority patent/CN113594032A/zh
Priority to US17/244,957 priority patent/US20210343539A1/en
Priority to JP2021163469A priority patent/JP7672943B2/ja
Publication of JP2021174985A publication Critical patent/JP2021174985A/ja
Publication of JP6956288B2 publication Critical patent/JP6956288B2/ja
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Priority to KR1020220136180A priority patent/KR20220150845A/ko
Priority to JP2025071302A priority patent/JP2025106601A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2021046015A 2020-04-30 2021-03-19 基板処理方法、プラズマ処理装置、及びエッチングガス組成物 Active JP6956288B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
TW110110808A TWI899193B (zh) 2020-04-30 2021-03-25 基板處理方法及電漿處理裝置
SG10202103960VA SG10202103960VA (en) 2020-04-30 2021-04-19 Substrate processing method and plasma processing apparatus
EP24175547.9A EP4428898A3 (en) 2020-04-30 2021-04-20 Substrate processing method and plasma processing apparatus
EP21169517.6A EP3905307B1 (en) 2020-04-30 2021-04-20 Substrate processing method and plasma processing apparatus
KR1020210051545A KR102459129B1 (ko) 2020-04-30 2021-04-21 기판 처리 방법 및 플라즈마 처리 장치
CN202110435309.3A CN113594032A (zh) 2020-04-30 2021-04-22 基板处理方法及等离子体处理装置
US17/244,957 US20210343539A1 (en) 2020-04-30 2021-04-30 Substrate processing method and plasma processing apparatus
JP2021163469A JP7672943B2 (ja) 2020-04-30 2021-10-04 プラズマ処理装置及び基板処理方法
KR1020220136180A KR20220150845A (ko) 2020-04-30 2022-10-21 기판 처리 방법 및 플라즈마 처리 장치
JP2025071302A JP2025106601A (ja) 2020-04-30 2025-04-23 プラズマ処理装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063017998P 2020-04-30 2020-04-30
US63/017,998 2020-04-30
US17/092,376 US11342194B2 (en) 2019-11-25 2020-11-09 Substrate processing method and substrate processing apparatus
US17/092,376 2020-11-09

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JP2021163469A Active JP7672943B2 (ja) 2020-04-30 2021-10-04 プラズマ処理装置及び基板処理方法
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JP7348672B2 (ja) * 2021-12-03 2023-09-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
KR20240151795A (ko) * 2022-02-24 2024-10-18 어플라이드 머티어리얼스, 인코포레이티드 계단구조가 없는 구조를 갖는 메모리 디바이스 및 이를 형성하기 위한 방법들
KR20240153992A (ko) * 2022-02-25 2024-10-24 도쿄엘렉트론가부시키가이샤 온도 조절 시스템, 온도 조절 방법, 기판 처리 방법 및 기판 처리 장치
JP7675044B2 (ja) 2022-03-24 2025-05-12 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
JP2023171269A (ja) * 2022-05-19 2023-12-01 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
JP2023170855A (ja) * 2022-05-20 2023-12-01 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2023181081A (ja) * 2022-06-10 2023-12-21 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
KR20250056202A (ko) * 2022-08-22 2025-04-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 기판 처리 시스템
JP7536941B2 (ja) * 2022-08-30 2024-08-20 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7781725B2 (ja) * 2022-10-03 2025-12-08 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
TW202520328A (zh) * 2023-06-01 2025-05-16 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
CN119890046B (zh) * 2024-12-26 2026-02-24 杭州富芯半导体有限公司 半导体器件的制备方法及半导体器件

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WO2009044681A1 (ja) * 2007-10-05 2009-04-09 Sekisui Chemical Co., Ltd. シリコンのエッチング方法
KR101134909B1 (ko) * 2010-05-06 2012-04-17 주식회사 테스 실리콘 산화막의 건식 식각 방법
JP2015073035A (ja) * 2013-10-03 2015-04-16 東京エレクトロン株式会社 エッチング方法
JP6788177B2 (ja) * 2015-05-14 2020-11-25 セントラル硝子株式会社 ドライエッチング方法、ドライエッチング剤及び半導体装置の製造方法
US9831097B2 (en) * 2015-12-18 2017-11-28 Applied Materials, Inc. Methods for selective etching of a silicon material using HF gas without nitrogen etchants
JP6812880B2 (ja) * 2017-03-29 2021-01-13 東京エレクトロン株式会社 基板処理方法及び記憶媒体。
JP7113711B2 (ja) * 2018-09-25 2022-08-05 東京エレクトロン株式会社 エッチング方法、エッチング装置、および記憶媒体

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