JP6954088B2 - シリコン単結晶の製造方法 - Google Patents
シリコン単結晶の製造方法 Download PDFInfo
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- JP6954088B2 JP6954088B2 JP2017242866A JP2017242866A JP6954088B2 JP 6954088 B2 JP6954088 B2 JP 6954088B2 JP 2017242866 A JP2017242866 A JP 2017242866A JP 2017242866 A JP2017242866 A JP 2017242866A JP 6954088 B2 JP6954088 B2 JP 6954088B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon single
- electrical resistivity
- dope gas
- absorption rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 title claims description 159
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 141
- 229910052710 silicon Inorganic materials 0.000 title claims description 141
- 239000010703 silicon Substances 0.000 title claims description 141
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 24
- 238000010521 absorption reaction Methods 0.000 claims description 42
- 238000002844 melting Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 13
- 238000007664 blowing Methods 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 90
- 239000002994 raw material Substances 0.000 description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000009395 breeding Methods 0.000 description 5
- 230000001488 breeding effect Effects 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000491 multivariate analysis Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017242866A JP6954088B2 (ja) | 2017-12-19 | 2017-12-19 | シリコン単結晶の製造方法 |
| CN201811548364.8A CN110004491B (zh) | 2017-12-19 | 2018-12-18 | 硅单晶的制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017242866A JP6954088B2 (ja) | 2017-12-19 | 2017-12-19 | シリコン単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019108248A JP2019108248A (ja) | 2019-07-04 |
| JP6954088B2 true JP6954088B2 (ja) | 2021-10-27 |
Family
ID=67165152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017242866A Active JP6954088B2 (ja) | 2017-12-19 | 2017-12-19 | シリコン単結晶の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6954088B2 (zh) |
| CN (1) | CN110004491B (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7259722B2 (ja) * | 2019-12-04 | 2023-04-18 | 株式会社Sumco | 単結晶製造装置及び単結晶の製造方法 |
| CN111477560B (zh) * | 2020-05-14 | 2023-03-03 | 包头美科硅能源有限公司 | 太阳能电池用镓、硼掺杂单晶硅棒区分的快速检测方法 |
| CN112986685B (zh) * | 2021-02-09 | 2023-11-10 | 西安奕斯伟材料科技股份有限公司 | 单晶硅棒电阻率的测量方法及装置 |
| CN115341267B (zh) * | 2021-05-13 | 2024-07-30 | 内蒙古中环晶体材料有限公司 | 一种控制掺镓单晶电阻率的掺杂方法 |
| CN115341268A (zh) * | 2021-05-13 | 2022-11-15 | 内蒙古中环协鑫光伏材料有限公司 | 一种自动控制单晶硅电阻率的方法 |
| CN115478321B (zh) * | 2022-08-16 | 2024-05-10 | 银川隆基硅材料有限公司 | 一种掺杂单晶硅的直拉生长方法及掺杂单晶硅 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4218681B2 (ja) * | 2003-07-29 | 2009-02-04 | 信越半導体株式会社 | シリコン単結晶基板の製造方法及び抵抗特性測定方法並びに抵抗特性保証方法 |
| WO2006003782A1 (ja) * | 2004-06-30 | 2006-01-12 | Shin-Etsu Handotai Co., Ltd. | シリコン単結晶の製造方法及び製造装置 |
| JP5049544B2 (ja) * | 2006-09-29 | 2012-10-17 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン単結晶の製造方法、シリコン単結晶の製造制御装置、及びプログラム |
| CN102534752A (zh) * | 2012-03-08 | 2012-07-04 | 天津市环欧半导体材料技术有限公司 | 一种制造区熔硅单晶的直拉区熔气掺法 |
| JP2013212944A (ja) * | 2012-03-30 | 2013-10-17 | National Institute Of Advanced Industrial Science & Technology | ドーピングシリコン単結晶の製造方法 |
| JP6152784B2 (ja) * | 2013-11-27 | 2017-06-28 | 信越半導体株式会社 | 半導体結晶の製造方法 |
| JP6365218B2 (ja) * | 2014-10-17 | 2018-08-01 | 株式会社Sumco | 単結晶の製造方法及び製造装置 |
| CN105759712B (zh) * | 2016-04-05 | 2018-04-24 | 西安西热电站化学科技有限公司 | 凝结水自动加氨的精确控制装置及方法 |
-
2017
- 2017-12-19 JP JP2017242866A patent/JP6954088B2/ja active Active
-
2018
- 2018-12-18 CN CN201811548364.8A patent/CN110004491B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110004491B (zh) | 2022-02-11 |
| CN110004491A (zh) | 2019-07-12 |
| JP2019108248A (ja) | 2019-07-04 |
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