JP6947366B2 - ディスプレイデバイス - Google Patents
ディスプレイデバイス Download PDFInfo
- Publication number
- JP6947366B2 JP6947366B2 JP2016175296A JP2016175296A JP6947366B2 JP 6947366 B2 JP6947366 B2 JP 6947366B2 JP 2016175296 A JP2016175296 A JP 2016175296A JP 2016175296 A JP2016175296 A JP 2016175296A JP 6947366 B2 JP6947366 B2 JP 6947366B2
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- Prior art keywords
- light emitting
- transistor
- substrate
- emitting diode
- display device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 142
- 239000002096 quantum dot Substances 0.000 claims description 35
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- 239000010410 layer Substances 0.000 description 192
- 239000000463 material Substances 0.000 description 41
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- 238000005424 photoluminescence Methods 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 239000003086 colorant Substances 0.000 description 10
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- 238000006243 chemical reaction Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
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- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
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- 150000004767 nitrides Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- -1 transition metal nitrides Chemical class 0.000 description 2
- 229910017121 AlSiO Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- UJXZVRRCKFUQKG-UHFFFAOYSA-K indium(3+);phosphate Chemical compound [In+3].[O-]P([O-])([O-])=O UJXZVRRCKFUQKG-UHFFFAOYSA-K 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910021350 transition metal silicide Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- AZOOXWWPWARTFV-UHFFFAOYSA-N zirconium hydrochloride Chemical compound Cl.[Zr] AZOOXWWPWARTFV-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0041—Devices characterised by their operation characterised by field-effect operation
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Description
102…表示領域
104…非表示領域
106…アウターリードボンディング(OLB)領域
110…発光ダイオードチップ
112…コモン電極
114…第一基板
116、116A、116B、116C…トランジスタ
118…ゲート電極
120…ゲート誘電体層
122…半導体層
124…ソース電極
126…ドレイン電極
128…接続電極
130…第二基板
132、132A、132B、132C、132D、132E、132F、132D…発光ユニット
134…第一電極
136…カラーフィルター層
136A…青色カラーフィルター層
136B…赤色カラーフィルター層
136C…緑色カラーフィルター層
138…フォトルミネセンス層
146…量子ドット膜
146A…第一量子ドット膜
146B…第二量子ドット膜
146C…第三量子ドット膜
200…ディスプレイデバイス
210…発光ダイオードチップ
212…コモン電極
216…トランジスタ
216A、216B、216C、216D、216E、216F…トランジスタ
228…接続電極
232…発光ユニット
234…第一電極
238…第二電極
310、310A、310B、310C…発光ダイオードチップ
316…トランジスタ
400A…ディスプレイデバイス
410A…発光ダイオードチップ
412…行コモン電極
416…トランジスタ
432…発光ユニット
440A…第一トランジスタ行
440B…第二トランジスタ行
442A…第一トランジスタ列
442B…第二トランジスタ列
444A…第一データライン
444B…第二データライン
446A…第一ゲートライン
446B…第二ゲートライン
448…列コモン電極
500A、500B…ディスプレイデバイス
516…トランジスタ
510A、510B…発光ダイオードチップ
540A…第一トランジスタ行
540B…第二トランジスタ行
600A…ディスプレイデバイス
610A、610B…発光ダイオードチップ
614…第一基板
616A、616B…トランジスタ
628A、628B…接続電極
632A、632B、632C、632D…発光ユニット
634A、634B…第一電極
636…カラーフィルター層
638…第二電極
646…ゲートライン
648A、648B…データライン
650…列コモン電極
652A、652B…遮光層
700A…ディスプレイデバイス
710A、710B…発光ダイオードチップ
716A、716B、716C、716D…トランジスタ
726A、726B、726C、726D…接続電極
732A、732B、732C、732D…発光ユニット
746A、746B…ゲートライン
748A、748B…データライン
750…列コモン電極
800A…ディスプレイデバイス
810A、810B…発光ダイオードチップ
816A、816B…トランジスタ
826A、826B…接続電極
832A、832B…発光ユニット
846A、846B…ゲートライン
848…データライン
854…行コモン電極
900A…ディスプレイデバイス
910A、910B…発光ダイオードチップ
916A、916B、916C、916D…トランジスタ
926A、926B、926C、926D…接続電極
932A、932B、932C、932D…発光ユニット
946A、946B…ゲートライン
948A、948B…データライン
954…行コモン電極
1000A…ディスプレイデバイス
1010A、1010B…発光ダイオードチップ
1016A、1016B、1016C、1016D…トランジスタ
1026A、1026B、1026C、1026D…接続電極
1032A、1032B、1032C、1032D…発光ユニット
1046A、1046B…ゲートライン
1048A、1048B…データライン
1050…列コモン電極
1054…行コモン電極
1100A…ディスプレイデバイス
1110A、1110B…発光ダイオードチップ
1116A、1116B、1116C、1116D…トランジスタ
1126B、1126C…接続電極
1146…ゲートライン
1148A、1148B、1148C、1148D…データライン
1150…列コモン電極
S1…第一側
S2…第二側
S3…第一側
S4…第二側
S5…第一側
S6…第二側
S7…第三側
S8…第四側
1B…領域
1C−1C、2B−2B、6E−6E…線
A1、A2…方向
Claims (20)
- ディスプレイデバイスであって、
第一基板と、
前記第一基板上に配置される第一トランジスタおよび第二トランジスタと、
前記第一基板上に配置されるコモン電極と、
前記第一基板上に配置され、且つ、前記第一トランジスタおよび前記第二トランジスタに対応して配置され、且つ、第一発光ユニットおよび第二発光ユニットを有する単一の発光ダイオードチップと、
を有し、
前記第一発光ユニットは、前記第一トランジスタおよび前記コモン電極に電気的に接続され、前記第二発光ユニットは、前記第二トランジスタおよび前記コモン電極に電気的に接続され、
前記コモン電極が、前記第一発光ユニットおよび前記第二発光ユニットよりも下に位置している、
ディスプレイデバイス。 - 前記発光ダイオードチップは、前記第一基板上に配置され、且つ、2N個のトランジスタに対応して配置され、Nは1より大きい正の整数である、請求項1に記載のディスプレイデバイス。
- 前記第一基板上に配置される第三トランジスタをさらに有し、前記発光ダイオードチップは前記第一基板上に配置され、且つ、前記第三トランジスタに対応してさらに配置され、前記発光ダイオードチップは、第三発光ユニットをさらに有し、前記第三発光ユニットは、前記第三トランジスタおよび前記コモン電極に電気的に接続される、請求項1に記載のディスプレイデバイス。
- 前記発光ダイオードチップは、前記第一基板上に配置され、且つ、3N個のトランジスタに対応して配置され、Nは1より大きい正の整数である、請求項3に記載のディスプレイデバイス。
- 前記発光ダイオードチップの発光表面上に配置される蛍光層をさらに有する、請求項1に記載のディスプレイデバイス。
- 前記第一基板と対向して配置される第二基板と、
前記第一基板と前記第二基板との間に配置されるカラーフィルター層と、をさらに有し、
前記カラーフィルター層は、第一カラーフィルターユニットおよび第二カラーフィルターユニットを有し、前記第一カラーフィルターユニットは、前記第一発光ユニットの発光経路で配置され、前記第二カラーフィルターユニットは、前記第二発光ユニットの発光経路で配置される、請求項5に記載のディスプレイデバイス。 - 前記第一基板と対向して配置される第二基板と、
前記第一基板と前記第二基板との間に配置される量子ドット膜と、をさらに有し、
前記量子ドット膜は、第一量子ドット膜および第二量子ドット膜を有し、前記第一量子ドット膜は、前記第一発光ユニットの発光経路で配置され、前記第二量子ドット膜は、前記第二発光ユニットの発光経路で配置される、請求項1に記載のディスプレイデバイス。 - 前記第一基板上に配置され、且つ、第一方向に沿って延伸する第一スキャンラインと、
前記第一基板上に配置され、且つ、前記第一方向に沿って延伸する第二スキャンラインと、
前記第一基板上に配置され、且つ、第二方向に沿って延伸するデータラインと、をさらに有し、
前記第一方向は、前記第二方向に実質的に垂直であり、
前記第一トランジスタは、前記第一スキャンラインおよび前記データラインに電気的に接続され、前記第二トランジスタは、前記第二スキャンラインおよび前記データラインに電気的に接続される、請求項1に記載のディスプレイデバイス。 - 前記第一基板上に配置され、且つ、第一方向に沿って延伸するスキャンラインと、
前記第一基板上に配置され、且つ、第二方向に沿って延伸する第一データラインと、
前記第一基板上に配置され、且つ、前記第二方向に沿って延伸する第二データラインと、をさらに有し、
前記第一方向は、前記第二方向に実質的に垂直であり、
前記第一トランジスタは、前記第一データラインおよび前記スキャンラインに電気的に接続され、前記第二トランジスタは、前記第二データラインおよび前記スキャンラインに電気的に接続される、請求項1に記載のディスプレイデバイス。 - 前記第一基板上に配置される第三トランジスタおよび第四トランジスタ、をさらに有し、
前記発光ダイオードチップは、前記第一基板上に配置され、且つ、前記第三トランジスタおよび前記第四トランジスタに対応してさらに配置され、前記発光ダイオードチップは、第三発光ユニットおよび第四発光ユニットをさらに有し、且つ、前記コモン電極は、互いに交差する第一コモン電極および第二コモン電極を有し、
前記第三発光ユニットは、前記第三トランジスタおよび前記コモン電極に電気的に接続され、前記第四発光ユニットは、前記第四トランジスタおよび前記コモン電極に電気的に接続される、請求項1に記載のディスプレイデバイス。 - 前記第一基板上に配置されるスキャンラインと、
前記第一基板上に配置される第一データラインと、
前記第一基板上に配置される第二データラインと、
前記第一基板上に配置される第三データラインと、
前記第一基板上に配置される第四データラインと、
前記第一基板上に配置される第三トランジスタおよび第四トランジスタと、をさらに有し、
前記発光ダイオードチップは、前記第一基板上に配置され、且つ、前記第三トランジスタおよび前記第四トランジスタに対応してさらに配置され、前記発光ダイオードチップは、第三発光ユニットおよび第四発光ユニットをさらに有し、前記第三発光ユニットは、前記第三トランジスタおよび前記コモン電極に電気的に接続され、前記第四発光ユニットは、前記第四トランジスタおよび前記コモン電極に電気的に接続され、
前記第一トランジスタは、前記第一データラインおよび前記スキャンラインに電気的に接続され、前記第二トランジスタは、前記第二データラインおよび前記スキャンラインに電気的に接続され、前記第三トランジスタは、前記第三データラインおよび前記スキャンラインに電気的に接続され、前記第四トランジスタは、前記第四データラインおよび前記スキャンラインに電気的に接続される、請求項1に記載のディスプレイデバイス。 - 前記発光ダイオードチップは、前記第一基板の法線の方向で、前記第一トランジスタおよび前記第二トランジスタを完全に被覆する、請求項1に記載のディスプレイデバイス。
- 前記発光ダイオードチップは、前記第一基板の法線の方向で、前記第一トランジスタおよび前記第二トランジスタを部分的に被覆する、請求項1に記載のディスプレイデバイス。
- 前記第一基板と対向して配置される第二基板と、
前記第一基板と前記第二基板との間に配置されるスペーサと、をさらに有する、請求項1に記載のディスプレイデバイス。 - 前記スペーサは、前記ディスプレイデバイスの非表示領域で配置される、請求項14に記載のディスプレイデバイス。
- 前記スペーサは、前記ディスプレイデバイスの表示領域で配置される、請求項14に記載のディスプレイデバイス。
- 前記第一発光ユニットは、前記第一トランジスタに電気的に接続される第一電極と、前記コモン電極に電気的に接続される第二電極とを有する、請求項1に記載のディスプレイデバイス。
- 前記第一トランジスタは薄膜トランジスタであり、前記薄膜トランジスタは、ゲート電極、ソース電極およびドレイン電極を有する、請求項17に記載のディスプレイデバイス。
- 前記薄膜トランジスタは、前記ドレイン電極および前記第一電極に電気的に接続される接続電極をさらに有する、請求項18に記載のディスプレイデバイス。
- 前記第一発光ユニットおよび前記第二発光ユニットは、それぞれ、無機発光ダイオードを有する、請求項1に記載のディスプレイデバイス。
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