JP6923474B2 - Semiconductor device packages and semiconductor devices - Google Patents

Description

The present invention relates to a semiconductor device package and a semiconductor device including a substrate on which the semiconductor device is mounted.

As a package for a semiconductor element that houses a semiconductor element such as an optical semiconductor element or a semiconductor integrated circuit element, a package having a substrate and a frame provided on the upper surface of the substrate is used. The upper surface of the substrate has a region in which a semiconductor element is mounted, such as a central portion thereof. The frame body surrounds the area on which the semiconductor element is mounted in a plan view. A semiconductor device is mounted on a substrate, and an opening on the upper side of the frame is sealed with a sealing material such as a lid to manufacture a semiconductor device. In a semiconductor device, a semiconductor element is airtightly sealed in a container composed of a substrate, a frame body, and a lid body.

In semiconductor device packages and semiconductor devices, the electrical connection between the semiconductor device inside the container and the outside is made via a wiring conductor that conducts inside and outside the frame. The wiring conductor is provided, for example, at an input / output terminal that penetrates the frame body in and out (see Patent Documents 1 to 3).

Japanese Unexamined Patent Publication No. 2002-118191 Japanese Unexamined Patent Publication No. 2012-226377 JP-A-2017-120901

In the above-mentioned prior art, the stress generated when a flexible substrate for external connection is pressed against the input / output terminals to connect them may cause mechanical damage such as partial cracks in the input / output terminals. On the other hand, for example, it is conceivable to provide a support portion as described in Patent Document 3 on the lower side of the input / output terminal. However, even in this case, since the lower surface of the support portion and the lower surface of the substrate are at the same height, stress due to the reaction from the mounting substrate at the time of mounting is applied to the input / output terminals via the support portion, and similarly, the machine There is a concern that it will cause serious destruction.

The package for a semiconductor element according to one aspect of the present invention is located on a substrate having an upper surface including a mounting portion of the semiconductor element and on the upper surface of the substrate so as to surround the mounting portion in a plan view and is located on the substrate side. A frame having an opening, an insulating plate located from the inside to the outside of the frame so as to close the opening, an input / output terminal including a first wiring located on the upper surface of the insulating plate, and the above. A plate-like body having a lower surface located on the lower surface of the insulating plate and located above the lower surface of the substrate in a portion of the insulating plate located outside the opening is connected to the first wiring. It is provided with a flexible substrate having a lower surface on which the second wiring is located.

Further, the semiconductor device of the present invention includes a semiconductor element package having the above configuration, a semiconductor element mounted on the mounting portion of the substrate, and a lid bonded to the frame body.

According to the semiconductor device package of one aspect of the present invention, the stress acting on the input / output terminals is reduced by the plate-shaped body. In addition, the possibility of stress acting from the plate-shaped body to the input / output terminals is also reduced. Therefore, it is possible to provide a package for a semiconductor element in which the possibility of mechanical destruction of the input / output terminals is reduced.

According to the semiconductor device according to one aspect of the present invention, since the package for the semiconductor element having the above configuration is included, the semiconductor device in which the possibility of mechanical destruction of the input / output terminals is reduced and is advantageous for improving reliability can be obtained. Can be provided.

It is a perspective view which shows by disassembling the package for the semiconductor element of embodiment of this invention. (A) is a side view showing a package for a semiconductor device according to an embodiment of the present invention, and (b) is a side view showing a part of (a) in an enlarged manner. (A) is a plan view showing the semiconductor device package of the embodiment of the present invention, and (b) is a bottom view showing the semiconductor device package of the embodiment of the present invention. (A) is a perspective view of the semiconductor device package of the embodiment of the present invention as viewed from above, and (b) is a perspective view of the semiconductor device package of the embodiment of the present invention as viewed from below. (A) is a perspective view showing a semiconductor device according to an embodiment of the present invention, and (b) is a perspective view showing a state in which a lid is removed from (a). (A) is a perspective view showing a part of a semiconductor device package and a semiconductor device according to the embodiment of the present invention, and (b) is a plan view thereof.

The semiconductor device package and the semiconductor device according to the embodiment of the present invention will be described with reference to the drawings. The distinction between the top and bottom in the following description is for convenience of explanation, and does not specify the vertical direction when the semiconductor element package and the semiconductor device are actually used.

FIG. 1 is a perspective view showing the semiconductor device package 10 according to the embodiment of the present invention in an exploded manner. FIG. 2A is a side view showing a semiconductor device package according to an embodiment of the present invention, and FIG. 2B is an enlarged side view showing a part of FIG. 2A. FIG. 3A is a plan view showing the semiconductor device package of the embodiment of the present invention, and FIG. 3B is a bottom view showing the semiconductor device package of the embodiment of the present invention. FIG. 4A is a perspective view of the semiconductor device package of the embodiment of the present invention as viewed from above, and FIG. 4B is a perspective view of the semiconductor device package of the embodiment of the present invention as viewed from below. Is. For example, the semiconductor device is mounted in the semiconductor device package shown in FIGS. 1 to 4, and the semiconductor device according to the embodiment of the present invention is configured. 5 (a) is a perspective view showing the semiconductor device according to the embodiment of the present invention, and FIG. 5 (b) is a perspective view showing a state in which the lid is removed from FIG. 5 (a). FIG. 6A is a perspective view showing a part of the semiconductor device package and the semiconductor device according to the embodiment of the present invention separately from the others, and FIG. 6B is a plan view thereof.

The semiconductor device package 10 of the embodiment includes a substrate 1 having an upper surface including a mounting portion 1a of the semiconductor element, and a frame body 2 located on the upper surface of the substrate 1 so as to surround the mounting portion 1a in a plan view. There is. The frame body 2 has an opening 2a on the substrate 1 side (that is, the lower end side). The opening 2a of the frame body 2 is closed by the input / output terminals 3 and electrically conducted inside and outside. That is, the input / output terminal 3 includes an insulating plate 31 located so as to close the opening 2a and a first wiring 32 located on the upper surface of the insulating plate 31 from the inside to the outside of the frame body 2. Further, the semiconductor device package 10 of the embodiment includes a plate-shaped body 4 and a flexible substrate 5. The plate-shaped body 4 is located on the lower surface of the insulating plate 31 in a portion of the insulating plate 31 located outside the opening 2a. The plate-shaped body 4 has a lower surface located above the lower surface of the substrate 1. Further, the flexible substrate 5 has a lower surface on which the second wiring 52 connected to the first wiring 32 is located.

The mounting portion 1a is, for example, a central portion of a portion of the substrate 1 located inside the frame body 2. FIG. 3 shows an example of the mounting portion 1a as a virtual line (dashed-dotted line). The range surrounded by this virtual line is the mounting unit, and the semiconductor element 101 is mounted in this range.

As described above, the semiconductor device 101 is mounted on the semiconductor device package 10 to form the semiconductor device 100. Examples of the mounted semiconductor element include an optical semiconductor element such as a semiconductor laser (laser diode, LD) or a photodiode (PD), a semiconductor integrated circuit element, and a sensor element such as an optical sensor. In this embodiment, a case where the semiconductor element 101 is an optical semiconductor element will be described as an example. The semiconductor device 100 including an optical semiconductor element is, for example, an optical semiconductor device used for optical communication.

The substrate 1 functions as a support member for supporting the semiconductor element 101 and a heat radiating plate for dissipating the heat generated by the semiconductor element 101. The substrate 1 is formed of a metal material such as copper, a copper-tungsten (Cu-W) alloy, an iron-nickel-cobalt (Fe-Ni-Co) alloy, or an iron-nickel (Fe-Ni) alloy. ..

The substrate 1 is manufactured in a predetermined shape and dimensions by subjecting the ingot of the metal material to a process appropriately selected from various metal processes such as rolling, punching, polishing, cutting and etching. be able to. Further, the substrate 1 may have a plating layer such as a nickel plating layer and a gold plating layer adhered to the surface thereof. For example, a nickel plating layer having a thickness of about 0.5 to 9 μm and a gold plating layer having a thickness of about 0.5 to 3 μm are sequentially adhered to the surface of the substrate 1 by a method such as an electroplating method. As a result, the substrate 1 can be effectively prevented from being oxidatively corroded, and the wettability of the brazing material with respect to the substrate 1 is improved. By improving the wettability of the brazing material, it is possible to improve the connection strength and reliability when the semiconductor element 101 or the like is fixed to the upper surface of the substrate 1 with the brazing material.

The frame body 2 is located so as to surround the mounting portion 1b of the substrate 1 in a plan view. Further, the opening 2a of the frame body 2 can be regarded as a notch portion in which the frame body 2 is cut out on the substrate 1 side. The frame body 2 has a rectangular frame-like shape in a plan view, and the opening 2a may be formed on one side wall of the four side walls of the frame body 2 and is continuous with two adjacent side walls. It may be formed in succession on three side walls.

The frame 2 is formed of, for example, a metal material (iron-nickel-cobalt alloy or the like) similar to that of the substrate 1. Further, the frame body 2 may be made of the above-mentioned metal material and is made of a metal material different from that of the substrate 1. For example, the substrate 1 may be made of a copper-tungsten alloy, and the frame 2 may be made of an iron-nickel alloy or the like. Similar to the substrate 1, the frame 2 can be manufactured by a method of forming an ingot of a metal material such as iron-nickel-cobalt into a predetermined shape and dimensions by subjecting an ingot of a metal material such as iron-nickel-cobalt to a process appropriately selected from the above metal processing. ..

Further, in the semiconductor element package 10 of the embodiment, the frame body 2 has a circular through hole 2b on the side surface on the short side opposite to the position where the opening 2a is located. The through hole 2b is a portion in which an optical fiber for transmitting and receiving an optical signal is arranged between the semiconductor element 101, which is an optical semiconductor element, and the outside. An optical fiber is inserted into the through hole 2b, and the end portion of the optical fiber is connected to a light receiving portion or a light emitting portion of the semiconductor element 101. This makes it possible to send and receive optical signals between the semiconductor element 101 (optical semiconductor element) and the outside.

The through hole 2b of the frame body 2 is formed by, for example, drilling with a drill or the like. One end of a tubular fixing member including a ferrule or the like may be joined around the outer opening of the frame 2 of the through hole 2b, or the fixing member may be fitted and joined to the through hole 2b. The optical fiber is inserted into the through hole in the length direction of the tubular fixing member, and the optical fiber is positioned and fixed to the frame 2 via the fixing member.

A plating layer may be adhered to the surface of the frame body 2 as in the substrate 1. Examples of the plating layer include a nickel plating layer having a thickness of 0.5 to 9 μm and a gold plating layer having a thickness of 0.5 to 9 μm, which are sequentially adhered to the surface of the frame body 2. In this case, characteristics such as corrosion resistance and wettability of the brazing material on the surface portion of the frame body 2 can be improved. Thereby, the frame body 2 can reduce the possibility of oxidative corrosion. Further, it is possible to improve the wettability of the brazing material when brazing a member such as the lid 102, which will be described later, to the frame body 2, which is advantageous for improving the reliability of airtight sealing as the package 10 for electronic elements. Become.

The input / output terminals 3 are positioned so as to close the opening 2a from the inside to the outside of the frame body 2. By closing the opening 2a with the input / output terminals 3, the semiconductor element 101 can be hermetically sealed inside the frame body 2. In this case, the through hole 2b of the frame body 2 is closed by the optical fiber and the fixing member as described above, and the opening on the upper side of the frame body 2 is closed by the lid body 102. As a result, the substrate 1
A container surrounded by (upper surface), a frame body 2, a fixing member, a lid body 102, and the like is formed, and the semiconductor element 101 is sealed in the container.

The input / output terminal 3 includes an insulating plate 31 and a first wiring 32 located on the upper surface of the insulating plate 31. The first wiring 32 is located from the inside to the outside of the frame body 2b. The first wiring 32 has a function of electrically conducting the inside and outside of the container. That is, an electrical connection is made between the semiconductor element 101 mounted on the mounting portion 1a and the external electric circuit via the first wiring 32.

In the semiconductor device package 10 of this embodiment, two insulating layers 31a and 31b are sequentially laminated one above the other to form an insulating plate 31. The upper surface of the upper insulating layer 31b corresponds to the upper surface of the insulating plate 31, and the first wiring 32 is located here.

As shown in FIG. 2 and the like, in this embodiment, the end portion of the lower insulating layer 31a is located outside the end portion of the upper insulating layer 31b on the outside of the frame body 2. As a result, the portion of the insulating plate 31 located outside the frame 2 is stepped. A part of the first wiring 32 is also located on the upper surface of the lower insulating layer 31a, and is exposed to the outside at the stepped portion. The first wiring 32 on the upper surface of the lower insulating layer 31a passes between the upper and lower insulating layers 31b and 31a from the stepped portion and extends to the inside of the frame 2. The first wiring 32 of the lower insulating layer 31a also has a function of electrically conducting the inside and outside of the frame body 2.

Further, in the semiconductor device package 10 of this embodiment, another insulating layer 31c is located on the upper surface of the upper insulating layer 31a. The other insulating layer 31c has a function of covering the first wiring 32 so as to include a portion of the first wiring 32 that overlaps the frame body 2 in a plan view to ensure electrical insulation between the first wiring 32 and the frame body 2. There is. The other insulating layer 31c can be formed by, for example, using the same material as the material described later of the insulating layer 31 and in the same method.

The electrical connection of the first wiring 32 to the external electric circuit is made via a flexible printed circuit board 5 (FPC). The flexible substrate 5 functions as an external terminal for externally connecting the semiconductor element 101 and the semiconductor device 100 including the semiconductor element 101. The flexible substrate 5 includes a relatively thin resin substrate 51 having a thickness of about several tens of μm and a wiring conductor provided on the surface thereof. The wiring conductor of the flexible substrate 5 is electrically connected to the first wiring 32 and functions as the second wiring 52 which is electrically connected to the external electric circuit. The end portion of the second wiring 52 on the side closer to the frame 2 is connected to the first wiring 32 facing each other, and the end portion on the opposite side is connected to the external electric circuit. These connections are made, for example, via a conductive bonding material such as solder or a conductive adhesive.

In addition, in FIGS. 3 to 5, the flexible substrate 5 is omitted in order to make the figure easier to see. Also in the semiconductor device 100 shown in FIG. 5, the flexible substrate 5 is connected to the end portion of the input / output terminal 3 opposite to the frame 2 as in the examples shown in FIGS. 1 and 2.

The plate-like body 4 is located on the lower surface of the insulating plate 31 in a portion of the insulating plate 31 located outside the opening 2a. The plate-shaped body 4 has a lower surface located above the lower surface of the substrate 1. That is, if the semiconductor element package 10 is placed on one flat surface (such as the upper surface of the mounting table), the lower surface of the substrate 1 is in contact with the plane, and the lower surface of the plate-like body 4 is slightly separated from the plane. It becomes a (so-called floating) state. The plate-shaped body 4 has a function of reducing the deflection (deflection) of the input / output terminals 3. Further, this has a function of reducing the possibility that the input / output terminal 3 is mechanically damaged such as a crack.

That is, for example, the semiconductor element package 10 (the one to which the flexible substrate 5 is not connected) is placed on the table (flat surface), and the flexible substrate 5 (second wiring 52) is connected to the input / output terminal 3 (first wiring 32). At this time, a force is applied downward from the upper side of the input / output terminal 3, and stress is generated in the connection portion of the input / output terminal 3 with the frame body 2. At this time, according to the difference in height between the lower surface of the substrate 1 and the lower surface of the plate-like body 4, the input / output terminal 3 is suppressed from further deformation (deflection) by the slightly bent shape. .. As a result, the stress is suppressed, and mechanical breakage such as cracks in the input / output terminal 3 is effectively suppressed.

In this case, assuming that the lower surface of the plate-shaped body 4 and the lower surface of the substrate 1 are at the same height, the force at the time of connecting the flexible substrate 5 is applied from the plate-shaped body 4 to the input / output 2 as a reaction, so that the input / output is input / output. The effect of stress reduction at the terminal 2 may be reduced. On the other hand, in the semiconductor device package 10 of the embodiment, since the input / output terminals 3 are slightly bent, the stress can be dispersed and reduced.

That is, in the semiconductor device package 10 of the embodiment, the stress acting on the input / output terminals 3 is reduced by the plate-shaped body 4. Further, the possibility that stress acts from the plate-shaped body 4 to the input / output terminals 3 is also reduced. Therefore, it is possible to provide the semiconductor element package 10 in which the possibility of mechanical destruction of the input / output terminal 3 is reduced.

The height difference H between the lower surface of the substrate 1 and the lower surface of the plate-like body 4 is, for example, about 0.05 to 0.2 mm in order to obtain the effect of suppressing mechanical destruction of the input / output terminal 3 as described above. Is set in the range of. When this height difference H is 0.05 mm or more, the input / output terminal 3 can be appropriately deformed (deflected) to disperse the stress. Further, when the height difference H is 0.2 mm or less, it is possible to suppress excessive deformation (excessive deflection) of the input / output terminal 3. Therefore, the mechanical destruction of the input / output terminal 3 can be effectively suppressed.

In this case, the external dimensions of the substrate 1 in a plan view are, for example, a rectangular shape (rectangular shape) having a side length of about 10 to 50 mm. When the substrate 1 has a rectangular shape in a plan view, the length of the short side is about 5 to 30 mm, and the length of the long side is about 10 to 50 mm. Further, the plate-shaped body 4 is, for example, FIG.
As shown in FIG. 6 and the like, the shape is rectangular, and the corner portions are formed into a flat shape or an arc shape. That is, the plate-shaped body 4 is a flat plate-shaped member whose angles are processed into a C-plane or an R-plane in a plan view. The shape of the plate-shaped body 4 in a plan view can be set to various shapes as long as the deformation of the input / output terminals can be suppressed as described above, and may be, for example, an oval shape.

The insulating plate 31 of the input / output terminal 3 is formed of a ceramic material such as an aluminum oxide-based sintered body, a mullite-based sintered body, an aluminum nitride-based sintered body, a silicon nitride-based sintered body, and a glass-ceramic sintered body. ing.

The insulating plate 31 can be manufactured as follows, for example, when it is made of an aluminum oxide sintered body. First, raw material powders such as aluminum oxide, silicon oxide, calcium oxide and magnesium oxide are kneaded together with an organic solvent and a binder to prepare a slurry. Next, this slurry is formed into a sheet by a method such as a doctor blade method or a lip coater method to prepare a ceramic green sheet. Then, the ceramic green sheet is cut into a predetermined shape and size to prepare a plurality of sheets, and these sheets are laminated one above the other and fired at a temperature of about 1300 to 1600 ° C. The insulating plate 31 can be manufactured by the above steps. In this case, each sheet becomes insulating layers 31a and 31b after firing.

The first wiring 32 of the input / output terminal 3 is formed of, for example, a metal material appropriately selected from metal materials such as tungsten, molybdenum, manganese, copper, silver, gold, palladium, and platinum. The first wiring 32 may be made of an alloy material containing these metal materials. These metal materials are formed by being adhered to a predetermined position of the insulating plate 31 as, for example, a metallized layer or a plating layer.

The first wiring 32 can be formed as follows, for example, when it is made of a tungsten metallized layer. First, the tungsten powder is kneaded with an appropriate organic solvent and a binder to prepare a tungsten metal paste. Next, this metal paste is applied to the surface of the sheet to be the insulating plate 31 (insulating layers 31a, 31b) in a predetermined pattern by a method such as a screen printing method. Then, this metal paste is co-fired together with the sheet under the above conditions. Through the above steps, the first wiring 32 can be provided at a predetermined position on the insulating plate 31.

The first wiring 32 may have a plating layer such as a nickel plating layer and a gold plating layer adhered to the surface of the metallize layer. When the plating layer is adhered, oxidative corrosion of the first wiring 32 can be reduced. Further, when the first wiring 32 and the second wiring 52 are connected via the solder, the characteristics such as the wettability of the solder can be improved. Thereby, the electrical and mechanical connection reliability between the first wiring 32 and the second wiring 52 can be improved. That is, it is effective in improving the reliability of the semiconductor element package 10.

The plate-shaped body 4 may be made of, for example, a metal material similar to that of the substrate 1, or may be made of a ceramic material similar to that of the insulating plate 31. If the plate-shaped body 4 is made of the same metal material as the substrate 1, when the substrate 1 and the frame body 2 are connected to the input / output terminal 3, the plate-shaped body 4 is also input / output as described later. It is easy to join to the terminal 3. At this time, it is advantageous in improving the productivity of the semiconductor element package 10.

In the joining of the input / output terminals 3 to the substrate 1 and the frame body 2 (that is, the step of closing the opening 2a), for example, the input / output terminals 3 are positioned so as to close the opening 2a and temporarily fixed with a jig or the like. These are heated and fixed with a brazing material. In this case, a film or paste of a brazing material such as silver brazing is interposed between the input / output terminal 3, the substrate 1 and the frame 2, and the film or paste is heated in this state. A base metal layer for brazing may be provided at the joint portion of the input / output terminal 3 with the brazing material. This base metal layer can be provided by the same method using, for example, the same metal material as that of the first wiring 32. The silver brazing material is, for example, a silver-copper brazing material, such as BAg8 specified by JIS.

As described above, the semiconductor device 100 of the embodiment is formed by the semiconductor element package 10 having the above configuration, the semiconductor element 101 mounted on the mounting portion 1a of the substrate 1, and the lid 102 joined to the frame body 2. It is basically composed. In the semiconductor device 100, the semiconductor element 101 with respect to the mounting portion 1a
Can be fixed by using a bonding material appropriately selected from, for example, a low melting point brazing material such as tin-silver, a gold-silicon (Au-Si) bonding material, a resin adhesive, and a bonding material such as glass. For example, the semiconductor element 101 can be bonded and fixed to the mounting portion 1a by positioning and mounting the semiconductor element 101 on the mounting portion 1a via a gold-silicon paste or film, and heating these. ..

Further, the semiconductor element 101 may be mounted and fixed on the mounting portion 1b of the substrate 1 via a mounting base (not shown). The mounting base is formed of, for example, silicon (Si) or a dielectric material such as an aluminum oxide sintered body or an aluminum nitride sintered body that approximates the coefficient of thermal expansion of the substrate 1. This mounting base is a heat transfer medium for transferring heat from the semiconductor element 101 to the substrate 1, and also has a function of adjusting the height thereof. By adjusting the height of the semiconductor element 101, for example, it is possible to facilitate the work of adjusting the optical axes of the semiconductor element 10 and the optical fiber so as to be aligned with each other. That is, it is possible to obtain the semiconductor device 100 which is advantageous in terms of improving the accuracy of receiving and emitting light with respect to the optical fiber and the productivity.

Even if a wiring conductor (not shown) for transmitting high-frequency signals is formed on the upper surface of the mounting base and a conductor layer (not shown) for mounting the semiconductor element 101 is formed. good.
In this case, a bonding wire that electrically connects each electrode of the semiconductor element 101 and the wiring conductor on the upper surface of the mounting base may be provided. The electrical connection between the wiring conductor and the semiconductor element 101 may be made by a conductive connection other than the bonding wire, such as a metal bump or a conductive adhesive.

When there is no mounting base, for example, the semiconductor element 101 mounted on the mounting portion 1a and the first wiring 32 provided in the portion of the input / output terminal 3 located inside the frame body 2 are used. They are electrically connected to each other via bonding wires (not shown). In the semiconductor device 100 of the above embodiment, the semiconductor element 101 is electrically connected to the first wiring 32 and electrically connected to the external electric circuit via the first wiring 32 and the second wiring 52.

As described above, the lid 102 closes the opening on the upper side of the frame 2, and functions as a part of forming a container for airtightly accommodating the semiconductor element 101. The lid 102 is made of, for example, a metal material such as an iron-nickel-cobalt (Fe-Ni-Co) alloy or a ceramic material such as an aluminum oxide sintered body. The joint between the lid 102 and the upper surface of the frame 2 is, for example, gold-tin (Au-Sn).
) It is performed by a joining method using a low melting point brazing material such as alloy solder. Further, the lid 102 and the upper surface of the frame 2 may be joined by a welding method such as YAG (yttrium-aluminum-garnet) laser welding or resistance welding.

The semiconductor device package 10 and the semiconductor device 100 of the above embodiment are viewed in a plan view.
A plurality of first wirings 32 may be arranged in parallel with each other in the width direction of the upper surface of the insulating plate 31 at intervals. The width direction of the upper surface of the insulating plate 31 is a direction orthogonal to the length direction of the first wiring 32 on the upper surface (that is, the line width direction of the first wiring 32). Further, at this time, both ends of the plate-like body 4 in the width direction may be located outside the first wiring 32 located at both ends of the arrangement in the width direction. In other words, the plate-shaped body 4 may have a shape and external dimensions that include all of the plurality of first wirings 32 in the line width direction in a plan view. If the plate-shaped body 4 has a rectangular shape as described above, it is easy to position the plate-shaped body 4 so as to include all of the plurality of first wirings 32 in the line width direction in the long side direction thereof.

In the case of the above configuration, in the range corresponding to the entire first wiring 32, when a force for connecting the second wiring 52 is applied to the input / output terminals 3, the stress generated in the insulating plate 31 is plate-shaped. It can be effectively reduced by the body 4. As a result, the possibility of mechanical destruction of the input / output terminal 3 including the insulating plate 31 can be effectively reduced. That is, about the semiconductor device 100
It is possible to effectively improve the reliability of electrical connection with an external electric circuit, the reliability of airtight sealing, and the like. Further, the semiconductor device package 10 can be made, which makes it easier to manufacture such a semiconductor device 100.

Further, in the semiconductor element package 10 and the semiconductor device 100 of the above embodiment, the difference in the coefficient of thermal expansion between the plate-shaped body 4 and the insulating plate 31 is larger than the difference in the coefficient of thermal expansion between the substrate 1 and the insulating plate 31. You may. In other words, the difference in the coefficient of thermal expansion between the plate-shaped body 4 and the insulating plate 31 may be relatively large in the semiconductor element package 10 and the semiconductor device 100. Furthermore, with respect to the material of the plate-shaped body 4, it is relatively small (compared to the substrate 1) that it is necessary to preferentially select a material that makes the difference in thermal expansion coefficient with that of the insulating plate 31 particularly small. Since the metal material tends to have a larger coefficient of thermal expansion than the ceramic material forming the insulating plate 31, it is possible to use a material having a relatively large coefficient of thermal expansion when the plate-like body 4 is a metal material. The restrictions on material selection are reduced.

For example, when the plate-like body 4 is smaller than the substrate 1 as in the examples shown in FIGS. 1 and 2, the plate is opposed to the magnitude of thermal stress caused by the difference in the coefficient of thermal expansion between the substrate 1 and the insulating plate 31. The effect of thermal stress generated by the difference between the coefficient of thermal expansion of the body 4 and the insulating substrate 31 is relatively small. Therefore, when the difference in the coefficient of thermal expansion between the plate-shaped body 4 and the insulating substrate 31 is large, the plate-shaped body can be produced by selecting from a larger number of materials. Therefore, the productivity of the semiconductor device package 10 can be improved. Further, it is possible to broaden the options based on the degree of freedom in designing the semiconductor element package 10 and the semiconductor device 100, for example, the thermal conductivity, magnetic permeability, color tone (appearance), and economic efficiency of the plate-shaped body.

The coefficient of thermal expansion is, for example, the coefficient of linear expansion of each member constituting the plate-shaped body 4, the insulating plate 31, the substrate 1, and the like. These linear expansion coefficients and the like can be measured using, for example, a measuring device such as a thermomechanical analyzer.

Further, the semiconductor element package 10 and the semiconductor device 100 of the above embodiment may further include a through conductor 6 penetrating from the upper surface to the lower surface of the insulating plate 31. Further, at this time, the plate-shaped body 4 may contain a metal material, and the first wiring 32 and the metal material of the plate-shaped body 4 may be electrically connected to each other via the through conductor 6. The first wiring 32 that is electrically connected to the metal material of the plate-like body 4 via the through conductor 6 is, for example, a ground wiring that supplies a ground potential to the semiconductor element 101.

In the above case, the ground potential of the first wiring 32 can be made more stable. As a result, it is possible to improve the transmission characteristics of the high frequency signal transmitted through the first wiring 32 other than for grounding. When the plate-shaped body 4 is made of the same metal material as the substrate 1 or the like as described above, the through conductor 6 is connected to an arbitrary portion of the plate-shaped body 4 to form the first wiring 32. The plate-shaped bodies 4 can be electrically connected to each other. Further, since the area of the metal material portion of the plate-shaped body 4 is relatively large, the ground potential can be stabilized more effectively. In addition, the transfer of electromagnetic noise between the first wiring 32 and the outside can be effectively reduced.

The through conductor 6 can be formed, for example, by using the same metal material as the first wiring 32, applying the same metal paste, and firing. In this case, through holes are formed in advance in the insulating plate 31 or the ceramic green sheet to be the insulating plate 31 by a method such as mechanical drilling or laser machining. The above metal paste is filled in the through holes by a method such as screen printing using vacuum suction, and then fired.

Further, the semiconductor element package 10 and the semiconductor device 100 of the above embodiment are shown in, for example, FIG.
As shown in the example shown in (b), the substrate 1 and the plate-shaped body 4 are each rectangular in a plan view, and the side surface of the substrate 1 and the side surface of the plate-shaped body 4 face each other at a constant distance from each other. It may be the one that is. That is, one side surface of each of the substrate 1 and the plate-shaped body 4 may face each other, and there may be a gap having a certain width in a plan view between these side surfaces. In other words, the substrate 1 and the plate-like body 4 do not have to be in contact with each other.

In such a case, the thermal expansion of each of the plate-shaped body 4 and the substrate 1 can be accommodated in the gap portion. Therefore, the possibility that thermal stress is generated between the substrate 1 and the plate-shaped body 4 can be effectively reduced, and the reliability of the semiconductor element package 10 and the semiconductor device 100 can be improved. ..

Further, in such a case, as described above, in the step of positioning the input / output terminals 3 so as to close the opening 2a and joining the input / output terminals 3 to the substrate 1 and the frame body 2, a jig or the like is used. Temporary fixing becomes easy. That is, the semiconductor element package 10 and the semiconductor device 100 can be used, which is advantageous for improving production. That is, in the case of such a configuration, a part of the jig can be easily fitted in the gap between the side surface of the substrate 1 and the side surface of the plate-shaped body 4, and the part of the jig is, for example, plate-shaped. It may be included in a frame-shaped portion that surrounds the body 4 in a plan view. As a result, the plate-shaped body 4 and the like can be temporarily fixed with a part of the jig so as not to move easily. That is, the semiconductor element package 10 and the semiconductor device 100 can be used, which are also advantageous in improving the position accuracy and productivity of the plate-shaped body 4.

Further, the semiconductor element package 10 and the semiconductor device 100 of the above embodiment have the first wiring 32.
Of these, the outer end L1 (position of the virtual line in FIG. 2) in the length direction orthogonal to the width direction of the upper surface of the insulating plate 31 may be positioned so as to overlap the plate-like body 4 in a plan view. In the example shown in FIG. 2, the first wiring 32 on the upper surface of the upper insulating layer 31b has the above configuration. In such a case, even if the stress at the time of connecting the flexible substrate 5 acts on the outer end L1 of the first wiring 32 relatively large, the portion is supported by the plate-shaped body 4 and the input / output terminal 3 (particularly). The possibility of mechanical damage to the insulating plate 31) can be effectively reduced.

In the semiconductor device 100 of the embodiment, as described above, the opening on the upper side of the frame body 2 is closed by the lid, the opening 2a is closed by the input / output terminal 3, and the through hole 2b includes an optical fiber. The semiconductor element 101 mounted on the mounting portion 1a is hermetically sealed by being closed with a fixing member or the like. The semiconductor element 101 can be electrically connected to an external electric circuit via an input / output terminal 3 and a flexible substrate 5. Further, the semiconductor element 101 is optically connected to the outside via an optical fiber. If the semiconductor element 101 is a semiconductor laser, an optical signal is radiated in response to an electric signal transmitted from an external electric circuit, and the optical signal is transmitted to the outside via an optical fiber. If the semiconductor element 101 is a photodiode, an electric signal is transmitted in response to an optical signal transmitted from the outside via an optical fiber, and the electric signal is transmitted to an external electric circuit via an input / output terminal 3 and a flexible substrate 5. do.

1 ・ ・ Board 1a ・ ・ Mounting part 2 ・ ・ Frame body 2a ・ ・ Opening 2b ・ ・ Through hole 3 ・ ・ Input / output terminal
31 ... Insulation plate
31a, 31b ... Insulation layer
31c ... Other insulation layer
32 ... 1st wiring 4 ... Plate-like body 5 ... Flexible substrate
51 ... Resin substrate
52 ... 2nd wiring 6 ... Through conductor
10 ... Package for semiconductor devices
100 ... Semiconductor device
101 ... Semiconductor element
102 ... lid

Claims (7)

A substrate having an upper surface including a mounting portion of a semiconductor element,
A frame body that is located on the upper surface of the substrate so as to surround the mounting portion in a plan view and has an opening on the substrate side.
From the inside to the outside of the frame, an input / output terminal including an insulating plate located so as to close the opening and a first wiring located on the upper surface of the insulating plate.
A plate-like body having a lower surface located on the lower surface of the insulating plate and above the lower surface of the substrate in a portion of the insulating plate located outside the opening.
A package for a semiconductor element including a flexible substrate having a lower surface on which a second wiring connected to the first wiring is located. In a plan view, a plurality of the first wirings are arranged in parallel with each other in the width direction of the upper surface of the insulating plate at intervals, and more than the first wirings located at both ends in the width direction. The package for a semiconductor element according to claim 1, wherein both ends of the plate-like body in the width direction are located on the outside. The package for a semiconductor device according to claim 1 or 2, wherein the difference in the coefficient of thermal expansion between the plate-shaped body and the insulating plate is larger than the difference in the coefficient of thermal expansion between the substrate and the insulating plate. Further, a penetrating conductor penetrating from the upper surface to the lower surface of the insulating plate is provided.
The first to third aspects of the present invention, wherein the plate-shaped body contains a metal material, and the first wiring and the metal material of the plate-shaped body are electrically connected to each other via the through conductor. The package for a semiconductor device according to any one of the above. Claims 1 to 4, wherein the substrate and the plate-like body are each rectangular in a plan view, and the side surface of the substrate and the side surface of the plate-like body face each other at a certain interval. The package for a semiconductor device according to any one of the above. Any of claims 1 to 5, wherein the outer end of the first wiring in the length direction orthogonal to the width direction of the upper surface of the insulating plate is located so as to overlap the plate-like body in a plan view. The package for semiconductor devices according to item 1. The semiconductor device package according to any one of claims 1 to 6.
A semiconductor element mounted on the mounting portion of the substrate and
A semiconductor device including a lid joined to the frame.

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