JP6906572B2 - 誘電性複合体構造の作製方法及び装置 - Google Patents
誘電性複合体構造の作製方法及び装置 Download PDFInfo
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- JP6906572B2 JP6906572B2 JP2019148890A JP2019148890A JP6906572B2 JP 6906572 B2 JP6906572 B2 JP 6906572B2 JP 2019148890 A JP2019148890 A JP 2019148890A JP 2019148890 A JP2019148890 A JP 2019148890A JP 6906572 B2 JP6906572 B2 JP 6906572B2
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Description
・HfO2又はZrO2の単独の誘電率よりも大きい誘電率
・HfO2又はZrO2の単独のリーク電流と同等か又はより低いリーク電流
・HfO2又はZrO2の単独の破壊電圧と同等か又はより高い破壊電圧
・HfO2又はZrO2の単独のステップカバレッジと同等か又はより良好なステップカバレッジ
、(b)、(c)及び(d)は、同程度又は異なる厚さであってもよく、0.1〜100nmの範囲の厚さとする。LBL(b)及び(c)は、各X又はYループにおいて、同程度又は異なる厚さであってもよく、そして、LBL(a)及び(d)は、同程度又は異なる厚さであってもよい。
以下、本発明の構成をまとめて記載する。
(1) 基板と、前記基板の表面上に形成された誘電性複合体構造と、を有する半導体デバイスであって、前記誘電性複合体構造は、1又は複数のリーク遮蔽層(LBL)と、1又は複数の、ラミネート誘電体層(LDL)、アロイ誘電体層(ADL)又は共堆積誘電体層(CDL)とが交互に配置された構造を有し、かつ、前記ラミネート誘電体層(LDL)、前記アロイ誘電体層(ADL)及び前記共堆積誘電体層(CDL)の各層は、それぞれベース誘電体層(BDL)に組み入れられたドーパントを含むことを特徴とする半導体デバイス。
(2) 前記リーク遮蔽層(LBL)と、前記ラミネート誘電体層(LDL)、前記アロイ誘電体層(ADL)又は前記共堆積誘電体層(CDL)との各対における、該ラミネート誘電体層(LDL)、該アロイ誘電体層(ADL)及び該共堆積誘電体層(CDL)の各層の厚さ及びドーピング濃度が同じであるか又は異なっており、かつ、ドーピング層又はドーパントが、厚さ0.5〜200nmの前記ベース誘電体層(BDL)に対しドーピング濃度0.5〜50%で組み入れられることを特徴とする上記(1)の半導体デバイス。
(3) 前記ラミネート誘電体層(LDL)、前記アロイ誘電体(ADL)層及び前記共堆積誘電体層(CDL)の各層の厚さが同じであるか又は異なっており、その厚さは0.1〜100nmの範囲内であることを特徴とする上記(2)の半導体デバイス。
(4) 前記誘電性複合体構造が、ベース誘電体材料、ドーパント及びリーク遮蔽材料を含み、かつ、前記ベース誘電体材料が、ZrO 2 と、HfO 2 と、ZrO 2 /HfO 2 混合物の複合体とからなる群のうちの1又は複数を含むことを特徴とする上記(1)の半導体デバイス。
(5) 前記ドーパントが、ランタナイド金属と、III(B)族、IV(B)族及びV(B)族の金属と、III(B)族、IV(B)族及びV(B)族の金属の酸化物とからなる群のうちの1又は複数を含むことを特徴とする上記(1)の半導体デバイス。
(6) 前記誘電性複合体構造のリーク遮蔽材料が、SiO 2 と、Al 2 O 3 とからなる群のうちの1又は複数を含むことを特徴とする上記(1)の半導体デバイス。
(7) 基板表面上に誘電性複合体構造を形成する方法であって、
1又は複数のリーク遮蔽層(LBL)と、1又は複数の、ラミネート誘電体層(LDL)、アロイ誘電体層(ADL)又は共堆積誘電体層(CDL)とが交互に配置されるように形成するステップを有し、かつ、
前記ラミネート誘電体層(LDL)、前記アロイ誘電体層(ADL)及び前記共堆積誘電体層(CDL)の各層は、それぞれベース誘電体層(BDL)に組み入れられたドーパントを含み、
前記ラミネート誘電体層(LDL)は、ラミネート法を用いて前記ベース誘電体層(BDL)にドーピング層を組み入れることにより形成され、
前記アロイ誘電体層(ADL)は、合金化法を用いて前記ベース誘電体層(BDL)にドーパントを組み入れることにより形成され、
前記共堆積誘電体層(CDL)は、共堆積法を用いて前記ベース誘電体層(BDL)のベース材料とドーパントを共にパルスすることにより形成されることを特徴とする誘電性複合体構造の形成方法。
(8) 前記誘電性複合体構造における交互に配置された層群の全ての層群(X、Y)の形成において、単一のドーピング法が用いられることを特徴とする上記(7)の誘電性複合体構造の形成方法。
(9) 前記誘電性複合体構造における交互に配置された層群のうち1つの層群(X)の形成において、複数のドーピング法の組合せを用いることを特徴とする上記(7)の誘電性複合体構造の形成方法。
(10) 前記誘電性複合体構造における交互に配置された層群のうち1つの層群(X)と別の層群(Y)の形成において、複数のドーピング法の組合せが異なることを特徴とする上記(9)の誘電性複合体構造の形成方法。
(11) 前記誘電性複合体構造における交互に配置された層群が、中央に位置する前記ラミネート誘電体層(LDL)、前記アロイ誘電体層(ADL)又は前記共堆積誘電体層(CDL)について対称であることを特徴とする上記(7)の誘電性複合体構造の形成方法。
(12) 前記誘電性複合体構造における交互に配置された層群が、中央に位置する前記ラミネート誘電体層(LDL)、前記アロイ誘電体層(ADL)又は前記共堆積誘電体層(CDL)について非対称であることを特徴とする上記(7)の誘電性複合体構造の形成方法。
(13) 誘電性複合体構造を作製するための原子層堆積(ALD)プロセスであって、複数のリーク遮蔽層(LBL)と、1又は複数の、ラミネート誘電体層(LDL)、アロイ誘電体層(ADL)又は共堆積誘電体層(CDL)とが交互に配置するように形成するステップを含み、かつ、前記ラミネート誘電体層(LDL)、前記アロイ誘電体層(ADL)及び前記共堆積誘電体層(CDL)は、ベース誘電体層(BDL)に組み入れられたドーパントを含むことを特徴とする原子層堆積プロセス。
(14) 前記ベース誘電体層(BDL)の各々が、
(a)ベース金属プリカーサが堆積される基板を備えたチャンバ内に、ベース金属プリカーサをアルゴン搬送ガスと共にパルス導入するステップと、
(b)前記基板の表面で前記ベース金属プリカーサの自己限界堆積が完了した後、過剰の前記ベース金属プリカーサを前記チャンバからパージするステップと、
(c)オゾン、O2又はH2Oであるオキシダントを前記チャンバ内にパルス導入するステップと、
(d)前記オキシダントを前記チャンバからパージするステップと、
(e)前記ベース誘電体層(BDL)が所望する厚さに到達するまで前記(a)〜(d)のステップを繰り返すステップと、により形成されることを特徴とする上記(13)の原子層堆積プロセス。
(15) 前記ラミネート誘電体層(LDL)の各々が、
(a)ベース金属プリカーサが堆積される基板を備えたチャンバ内に、ベース金属プリカーサをアルゴン搬送ガスと共にパルス導入するステップと、
(b)前記基板の表面で前記ベース金属プリカーサの自己限界堆積が完了した後、過剰の前記ベース金属プリカーサを前記チャンバからパージするステップと、
(c)オゾン、O2又はH2Oであるオキシダントを前記チャンバ内にパルス導入するステップと、
(d)前記オキシダントを前記チャンバからパージするステップと、
(e)ドーパントプリカーサをアルゴン搬送ガスと共に前記チャンバ内にパルス導入するステップと、
(f)前記ベース金属プリカーサ上で前記ドーパントプリカーサの自己限界堆積が完了した後、過剰の前記ドーパントプリカーサを前記チャンバからパージするステップと、
(g)オキシダントを前記チャンバ内にパルス導入するステップと、
(h)前記オキシダントを前記チャンバからパージするステップと、
(i)前記ラミネート誘電体層(LDL)が所望する厚さに到達するまで前記(a)〜(h)のステップを繰り返すステップと、により形成されることを特徴とする上記(13)の原子層堆積プロセス。
(16) 前記アロイ誘電体層(ADL)の各々が、
(a)ベース金属プリカーサが堆積される基板を備えたチャンバ内に、ベース金属プリカーサをアルゴン搬送ガスと共にパルス導入するステップと、
(b)前記基板の表面で前記ベース金属プリカーサの自己限界堆積が完了した後、過剰の前記ベース金属プリカーサを前記チャンバからパージするステップと、
(c)ドーパントプリカーサをアルゴン搬送ガスと共に前記チャンバ内にパルス導入するステップと、
(d)前記ベース金属プリカーサ上で前記ドーパントプリカーサの自己限界堆積が完了した後、過剰の前記ドーパントプリカーサを前記チャンバからパージするステップと、
(e)オキシダントを前記チャンバ内にパルス導入するステップと、
(f)前記オキシダントを前記チャンバからパージするステップと、
(g)前記アロイ誘電体層(ADL)が所望する厚さに到達するまで前記(a)〜(f)のステップを繰り返すステップと、により形成されることを特徴とする上記(13)の原子層堆積プロセス。
(17) 前記共堆積誘電体層(CDL)の各々が、
(a)ベース金属プリカーサ及びドーパントプリカーサが堆積される基板を備えたチャンバ内に、ベース金属プリカーとドーパントプリカーサを共に、アルゴン搬送ガスと共にパルス導入するステップと、
(b)前記基板の表面での混合した前記ベース金属プリカーサ及びドーパントプリカーサの自己限界堆積が完了した後、過剰の前記ベース金属プリカーサ及びドーパントプリカーサを前記チャンバからパージするステップと、
(c)オキシダントを前記チャンバ内にパルス導入するステップと、
(d)前記オキシダントを前記チャンバからパージするステップと、
(e)前記共堆積誘電体層(CDL)が所望する厚さに到達するまで前記(a)〜(d)のステップを繰り返すステップと、により形成されることを特徴とする上記(13)の原子層堆積プロセス。
(18) 前記リーク遮蔽層(LBL)の各々が、
(a)リーク遮蔽プリカーサが堆積される基板を備えたチャンバ内に、リーク遮蔽プリカーサをアルゴン搬送ガスと共にパルス導入するステップと、
(b)前記基板の表面で前記リーク遮蔽プリカーサの自己限界堆積が完了した後、過剰の前記リーク遮蔽プリカーサを前記チャンバからパージするステップと、
(c)オキシダントを前記チャンバ内にパルス導入するステップと、
(d)前記オキシダントを前記チャンバからパージするステップと、
(e)前記リーク遮蔽層(LBL)が所望する厚さに到達するまで前記(a)〜(d)のステップを繰り返すステップと、により形成されることを特徴とする上記(13)の原子層堆積プロセス。
(19) 不活性ガスの存在下、300℃〜900℃の温度にてアニーリングを行う後処理アニーリングにより、前記誘電性複合体構造を結晶学的に安定化させるステップをさらに有することを特徴とする上記(13)の原子層堆積プロセス。
(20) 前記誘電性複合体構造に対し赤外線、可視光線又は紫外線を照射する後処理アニーリングにより、前記誘電性複合体構造を結晶学的に安定化させるステップをさらに有することを特徴とする上記(13)の原子層堆積プロセス。
(21) 前記誘電性複合体構造に対し電子又はイオンを照射する後処理アニーリングにより、前記誘電性複合体構造を結晶学的に安定化させるステップをさらに有することを特徴とする上記(13)の原子層堆積プロセス。
20 プロセス
22 BDL形成プロセス
24 ドープ誘電体層形成プロセス
26 LBL形成プロセス
200 コントローラ
Claims (19)
- 積層誘電性複合体構造を形成する方法であって、
1又は複数のリーク遮蔽誘電体層を、1又は複数のドーピングされた高誘電率誘電体層と交互に基板上に堆積することを含み、
前記1又は複数のリーク遮蔽誘電体層を堆積することが、ドーピングされていないSiO2及びドーピングされていないAl2O3のうち1つ又は双方を堆積することを含み、
前記1又は複数のドーピングされた高誘電率誘電体層を堆積することが、前記基板をベース金属プリカーサと、オキシダントと、ドーパントプリカーサとに交互に曝すことを含むことによって、前記1又は複数のドーピングされた高誘電率誘電体層が、ドーパントをドーピングされたベース誘電体層を有することとなり、
前記積層誘電性複合体構造が、ドーパントをドーピングされていないベース誘電体層に比べて、同等か又はより低いリーケージ電流、及び、同等か又はより高い破壊電圧を有する、方法。 - 前記ドーパントプリカーサが、ランタナイド、III(B)族元素、IV(B)族元素及びV(B)族元素からなる群から選択されたドーパントを含む、請求項1に記載の方法。
- 前記ドーパントをドーピングされたベース誘電体層は、ドーパントをドーピングされていないベース誘電体層に比べてより高い誘電率を有する、請求項2に記載の方法。
- 前記1又は複数のドーピングされた高誘電率誘電体層が、ドーピングされたHfO2及びドーピングされたZrO2のうち1つ又は双方を含む、請求項3に記載の方法。
- 前記1又は複数のドーピングされた高誘電率誘電体層を堆積することが、ベース誘電体層を堆積することと、ドーピングされた誘電体層を堆積することとを含む、請求項1に記載の方法。
- 前記ベース誘電体層を堆積することが、前記基板を前記ベース金属プリカーサに曝した後に前記基板を前記オキシダントに曝すことを含む、請求項5に記載の方法。
- 前記ドーピングされた誘電体層を堆積することが、前記基板を前記オキシダントに曝した後に前記基板を前記ドーパントプリカーサに曝し、その後、前記基板を第2のオキシダントに曝すことを含む、請求項6に記載の方法。
- 前記1又は複数のドーピングされた高誘電率誘電体層を堆積することが、金属アロイ層を堆積し、そして続いて前記金属アロイ層を酸化することを含む、請求項1に記載の方法。
- 前記金属アロイ層を堆積することが、前記基板を前記ベース金属プリカーサと前記ドーパントプリカーサとに順次曝すことを含む、請求項8に記載の方法。
- 前記1又は複数のドーピングされた高誘電率誘電体層を堆積することが、前記基板を前記ベース金属プリカーサと前記ドーパントプリカーサとに順次曝した後に、前記基板を前記オキシダントに曝すことを含む、請求項9に記載の方法。
- 積層誘電性複合体構造を形成する方法であって、
1又は複数のリーク遮蔽誘電体層を、1又は複数のドーピングされた高誘電率誘電体層と交互に基板上に堆積することを含み、
前記1又は複数のリーク遮蔽誘電体層を堆積することが、ドーピングされていないSiO2及びドーピングされていないAl2O3のうち1つ又は双方を堆積することを含み、
前記1又は複数のドーピングされた高誘電率誘電体層を堆積することが、前記基板をベース金属プリカーサとドーパントプリカーサとに同時に曝すことにより金属アロイ層を堆積した後に、前記金属アロイ層を酸化することによって、前記1又は複数のドーピングされた高誘電率誘電体層が、ドーパントをドーピングされたベース誘電体層を有することとなり、
前記積層誘電性複合体構造が、ドーパントをドーピングされていないベース誘電体層に比べて、同等か又はより低いリーケージ電流、及び、同等か又はより高い破壊電圧を有する、方法。 - 前記1又は複数のドーピングされた高誘電率誘電体層を堆積することが、前記基板を前記ベース金属プリカーサと前記ドーパントプリカーサとに同時に曝した後に、オキシダントに曝すことを含む、請求項11に記載の方法。
- 前記方法がさらに、アニーリングすることにより前記積層誘電性複合体構造の誘電率を高めることを含む、請求項1に記載の方法。
- 前記方法がさらに、アニーリングすることにより前記積層誘電性複合体構造を立方体相又は正四面体相へと結晶学的に安定とすることを含む、請求項1に記載の方法。
- 半導体構造において、
半導体基板と、
前記半導体基板上に形成された積層誘電性複合体構造とを有し、前記積層誘電性複合体構造は、交互になっている1又は複数のリーク遮蔽誘電体層と1又は複数のドーピングされた高誘電率誘電体層とを具備し、
前記1又は複数のリーク遮蔽誘電体層が、ドーピングされていないSiO2及びドーピングされていないAl2O3のうち1つ又は双方を含み、かつ、
前記1又は複数のドーピングされた高誘電率誘電体がベース誘電体層を有し、前記ベース誘電体層は、ドーパントをドーピングされていないベース誘電体層に比べてより高い誘電率を有するようにドーパントをドーピングされており、
前記積層誘電性複合体構造が、ドーパントをドーピングされていないベース誘電体層に比べて、同等か又はより低いリーケージ電流、及び、同等か又はより高い破壊電圧を有する、半導体構造。 - 前記積層誘電性複合体構造が、ドーパントを含まずかつ前記リーク遮蔽誘電体層を有しないベース誘電体層に比べてより高い誘電率と、より低いリーケージ電流とを有する、請求項15に記載の半導体構造。
- 前記ベース誘電体層が、HfO2及びZrO2のうち1つ又は双方を含む、請求項15に記載の半導体構造。
- 前記ドーパントが、ランタナイド、III(B)族元素、IV(B)族元素及びV(B)族元素からなる群から選択された1又は複数の金属元素を含む、請求項15に記載の半導体構造。
- 前記ドーピングされた高誘電率誘電体層の1つが、前記積層誘電性複合体構造の中央層である、請求項15に記載の半導体構造。
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US9617638B2 (en) | 2014-07-30 | 2017-04-11 | Lam Research Corporation | Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system |
US9508547B1 (en) * | 2015-08-17 | 2016-11-29 | Lam Research Corporation | Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors |
US9738977B1 (en) | 2016-06-17 | 2017-08-22 | Lam Research Corporation | Showerhead curtain gas method and system for film profile modulation |
KR102369676B1 (ko) | 2017-04-10 | 2022-03-04 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
TWI815891B (zh) * | 2018-06-21 | 2023-09-21 | 美商應用材料股份有限公司 | 薄膜及沉積薄膜的方法 |
US20230420491A1 (en) * | 2022-06-28 | 2023-12-28 | International Business Machines Corporation | Ferroelectric Film with Buffer Layers for Improved Reliability of Metal-Insulator-Metal Capacitor |
KR102637458B1 (ko) | 2023-04-11 | 2024-02-16 | 현진인터내셔널 주식회사 | 내구성 및 방오기능이 향상된 친환경 차열데크 및 그 제조방법 |
CN116875961A (zh) * | 2023-09-01 | 2023-10-13 | 上海陛通半导体能源科技股份有限公司 | 原子层沉积设备 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11214127A (ja) * | 1998-01-21 | 1999-08-06 | Riken Corp | ヒーター装置及びその製造方法 |
FI117979B (fi) * | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
US6660660B2 (en) * | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
US20040245602A1 (en) * | 2003-05-21 | 2004-12-09 | Kim Sun Jung | Method of fabricating metal-insulator-metal capacitor (MIM) using lanthanide-doped HfO2 |
FR2869325B1 (fr) * | 2004-04-27 | 2006-06-16 | Commissariat Energie Atomique | Procede de depot d'une couche mince sur une couche oxydee d'un substrat |
US7374964B2 (en) | 2005-02-10 | 2008-05-20 | Micron Technology, Inc. | Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics |
JP2007266438A (ja) * | 2006-03-29 | 2007-10-11 | Hitachi Ltd | 半導体記憶装置 |
JP2008112956A (ja) * | 2006-08-03 | 2008-05-15 | Sony Corp | キャパシタおよびその製造方法、ならびに、半導体デバイスおよび液晶表示装置 |
KR100872876B1 (ko) * | 2006-11-24 | 2008-12-10 | 삼성전자주식회사 | 반도체 장치의 제조 방법 및 이에 따라 제조된 반도체 장치 |
US7833913B2 (en) * | 2007-03-20 | 2010-11-16 | Tokyo Electron Limited | Method of forming crystallographically stabilized doped hafnium zirconium based films |
US7723771B2 (en) * | 2007-03-30 | 2010-05-25 | Qimonda Ag | Zirconium oxide based capacitor and process to manufacture the same |
US7833914B2 (en) | 2007-04-27 | 2010-11-16 | Micron Technology, Inc. | Capacitors and methods with praseodymium oxide insulators |
TWI426602B (zh) * | 2007-05-07 | 2014-02-11 | Sony Corp | A solid-state image pickup apparatus, a manufacturing method thereof, and an image pickup apparatus |
KR101541544B1 (ko) * | 2007-12-26 | 2015-08-03 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법 및 촬상 장치 |
TWI467045B (zh) * | 2008-05-23 | 2015-01-01 | Sigma Aldrich Co | 高介電常數電介質薄膜與使用鈰基前驅物製造高介電常數電介質薄膜之方法 |
KR20100041179A (ko) * | 2008-10-13 | 2010-04-22 | 매그나칩 반도체 유한회사 | 유전체, 이를 구비한 캐패시터 및 그 제조방법, 반도체 소자 제조방법 |
KR20100079557A (ko) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조방법 |
US20120127629A1 (en) | 2009-04-16 | 2012-05-24 | Advanced Technology Materials, Inc. | DOPED ZrO2 CAPACITOR MATERIALS AND STRUCTURES |
KR20110006450A (ko) * | 2009-07-14 | 2011-01-20 | 삼성전자주식회사 | 반도체 소자의 유전 박막 형성 방법 |
JP2011204751A (ja) * | 2010-03-24 | 2011-10-13 | Elpida Memory Inc | 半導体装置の製造方法 |
JP5587716B2 (ja) * | 2010-09-27 | 2014-09-10 | マイクロンメモリジャパン株式会社 | 半導体装置及びその製造方法、並びに吸着サイト・ブロッキング原子層堆積法 |
US20120082283A1 (en) * | 2010-09-30 | 2012-04-05 | Liviu Popa-Simil | Method of using micro-nano-hetro structures to make radiation detection systems and devices with applications |
JP5932221B2 (ja) * | 2011-01-14 | 2016-06-08 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置 |
JP2013058559A (ja) * | 2011-09-07 | 2013-03-28 | Tokyo Electron Ltd | 半導体装置の製造方法及び基板処理システム |
US8574998B2 (en) * | 2011-12-05 | 2013-11-05 | Intermolecular, Inc. | Leakage reduction in DRAM MIM capacitors |
JP5882075B2 (ja) * | 2012-02-06 | 2016-03-09 | 東京エレクトロン株式会社 | キャパシタの製造方法、キャパシタ、およびそれに用いられる誘電体膜の形成方法 |
KR101475996B1 (ko) * | 2012-02-29 | 2014-12-24 | 매그나칩 반도체 유한회사 | 유전체, 이를 구비한 캐패시터 및 그 제조방법, 반도체 소자 제조방법 |
US9245743B2 (en) * | 2013-08-02 | 2016-01-26 | Intermolecular, Inc. | Methods for forming high-k dielectrics containing hafnium and zirconium using atomic layer deposition |
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