JP6902865B2 - 半導体発光装置および半導体発光装置の製造方法 - Google Patents

半導体発光装置および半導体発光装置の製造方法 Download PDF

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JP6902865B2
JP6902865B2 JP2016253502A JP2016253502A JP6902865B2 JP 6902865 B2 JP6902865 B2 JP 6902865B2 JP 2016253502 A JP2016253502 A JP 2016253502A JP 2016253502 A JP2016253502 A JP 2016253502A JP 6902865 B2 JP6902865 B2 JP 6902865B2
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layer
substrate
light emitting
semiconductor
emitting device
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JP2018107321A (ja
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伊藤　洋平
洋平 伊藤
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Rohm Co Ltd
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Rohm Co Ltd
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JP2016253502A 2016-12-27 2016-12-27 半導体発光装置および半導体発光装置の製造方法 Expired - Fee Related JP6902865B2 (ja)

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JP2018107321A JP2018107321A (ja) 2018-07-05
JP2018107321A5 JP2018107321A5 (https=) 2019-10-10
JP6902865B2 true JP6902865B2 (ja) 2021-07-14

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Publication number Priority date Publication date Assignee Title
JPWO2020031954A1 (ja) * 2018-08-07 2021-08-10 昭和電工光半導体株式会社 半導体発光素子、光伝達装置
JP7364376B2 (ja) * 2018-10-12 2023-10-18 ローム株式会社 半導体発光装置および半導体発光装置の製造方法

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* Cited by examiner, † Cited by third party
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JP5077068B2 (ja) * 2007-05-30 2012-11-21 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
JP2011086899A (ja) * 2009-09-15 2011-04-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP2012119585A (ja) * 2010-12-02 2012-06-21 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
WO2012176369A1 (ja) * 2011-06-24 2012-12-27 パナソニック株式会社 窒化ガリウム系半導体発光素子、光源および凹凸構造形成方法
JP2014120695A (ja) * 2012-12-19 2014-06-30 Rohm Co Ltd 半導体発光素子

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