JP6902865B2 - 半導体発光装置および半導体発光装置の製造方法 - Google Patents
半導体発光装置および半導体発光装置の製造方法 Download PDFInfo
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- JP6902865B2 JP6902865B2 JP2016253502A JP2016253502A JP6902865B2 JP 6902865 B2 JP6902865 B2 JP 6902865B2 JP 2016253502 A JP2016253502 A JP 2016253502A JP 2016253502 A JP2016253502 A JP 2016253502A JP 6902865 B2 JP6902865 B2 JP 6902865B2
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- 239000004065 semiconductor Substances 0.000 title claims description 140
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims description 114
- 229910052751 metal Inorganic materials 0.000 claims description 61
- 239000002184 metal Substances 0.000 claims description 61
- 239000010408 film Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 23
- 239000000523 sample Substances 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 6
- 239000012788 optical film Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
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- 239000010410 layer Substances 0.000 description 310
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 59
- 238000010586 diagram Methods 0.000 description 18
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 239000000203 mixture Substances 0.000 description 14
- 229910005540 GaP Inorganic materials 0.000 description 13
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
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- 238000007736 thin film deposition technique Methods 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
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- 238000005336 cracking Methods 0.000 description 2
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- 238000011156 evaluation Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
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- 238000004088 simulation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016253502A JP6902865B2 (ja) | 2016-12-27 | 2016-12-27 | 半導体発光装置および半導体発光装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016253502A JP6902865B2 (ja) | 2016-12-27 | 2016-12-27 | 半導体発光装置および半導体発光装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018107321A JP2018107321A (ja) | 2018-07-05 |
| JP2018107321A5 JP2018107321A5 (enExample) | 2019-10-10 |
| JP6902865B2 true JP6902865B2 (ja) | 2021-07-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2016253502A Expired - Fee Related JP6902865B2 (ja) | 2016-12-27 | 2016-12-27 | 半導体発光装置および半導体発光装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6902865B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020031954A1 (ja) * | 2018-08-07 | 2020-02-13 | 昭和電工株式会社 | 半導体発光素子、光伝達装置 |
| JP7364376B2 (ja) * | 2018-10-12 | 2023-10-18 | ローム株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5077068B2 (ja) * | 2007-05-30 | 2012-11-21 | 日亜化学工業株式会社 | 窒化物半導体素子及びその製造方法 |
| JP2011086899A (ja) * | 2009-09-15 | 2011-04-28 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物半導体発光素子 |
| JP2012119585A (ja) * | 2010-12-02 | 2012-06-21 | Showa Denko Kk | 発光ダイオード、発光ダイオードランプ及び照明装置 |
| WO2012176369A1 (ja) * | 2011-06-24 | 2012-12-27 | パナソニック株式会社 | 窒化ガリウム系半導体発光素子、光源および凹凸構造形成方法 |
| JP2014120695A (ja) * | 2012-12-19 | 2014-06-30 | Rohm Co Ltd | 半導体発光素子 |
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- 2016-12-27 JP JP2016253502A patent/JP6902865B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
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| JP2018107321A (ja) | 2018-07-05 |
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