JP6902255B2 - 紫外線発光素子 - Google Patents

紫外線発光素子 Download PDF

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Publication number
JP6902255B2
JP6902255B2 JP2016225108A JP2016225108A JP6902255B2 JP 6902255 B2 JP6902255 B2 JP 6902255B2 JP 2016225108 A JP2016225108 A JP 2016225108A JP 2016225108 A JP2016225108 A JP 2016225108A JP 6902255 B2 JP6902255 B2 JP 6902255B2
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Japan
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layer
type algan
light emitting
algan layer
ultraviolet light
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JP2016225108A
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Japanese (ja)
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JP2017139447A (ja
JP2017139447A5 (enExample
Inventor
卓哉 美濃
卓哉 美濃
隆好 高野
隆好 高野
憲路 野口
憲路 野口
阪井　淳
淳 阪井
後藤　浩嗣
浩嗣 後藤
秀樹 平山
秀樹 平山
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RIKEN
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RIKEN
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Publication of JP2017139447A5 publication Critical patent/JP2017139447A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
JP2016225108A 2016-02-01 2016-11-18 紫外線発光素子 Active JP6902255B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016016986 2016-02-01
JP2016016986 2016-02-01

Publications (3)

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JP2017139447A JP2017139447A (ja) 2017-08-10
JP2017139447A5 JP2017139447A5 (enExample) 2020-04-30
JP6902255B2 true JP6902255B2 (ja) 2021-07-14

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JP2016225108A Active JP6902255B2 (ja) 2016-02-01 2016-11-18 紫外線発光素子

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JP (1) JP6902255B2 (enExample)
WO (1) WO2017134713A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019036629A (ja) * 2017-08-15 2019-03-07 国立研究開発法人理化学研究所 深紫外発光ダイオードおよびそれを備える電気機器
JP6379265B1 (ja) * 2017-09-12 2018-08-22 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
WO2019069834A1 (ja) * 2017-10-02 2019-04-11 Ｄｏｗａエレクトロニクス株式会社 深紫外発光素子およびその製造方法
CN108231965B (zh) * 2018-02-06 2019-05-24 华南师范大学 一种提高光输出的AlGaN基深紫外LED外延结构
JP7068577B2 (ja) * 2018-03-28 2022-05-17 日亜化学工業株式会社 窒化物半導体発光素子
CN110911529B (zh) * 2018-09-14 2021-07-30 宁波安芯美半导体有限公司 一种发光二极管外延结构生长方法
CN110911531B (zh) * 2018-09-14 2021-08-03 宁波安芯美半导体有限公司 一种发光二极管外延结构及发光二极管
JP7146589B2 (ja) * 2018-11-15 2022-10-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP2020167321A (ja) * 2019-03-29 2020-10-08 旭化成株式会社 窒化物半導体発光素子

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214337A (ja) * 2002-12-27 2004-07-29 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP5082444B2 (ja) * 2004-04-28 2012-11-28 三菱化学株式会社 窒化物半導体発光素子
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
JP5533093B2 (ja) * 2010-03-18 2014-06-25 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP5601281B2 (ja) * 2011-05-30 2014-10-08 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP5598437B2 (ja) * 2011-07-12 2014-10-01 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP2015065245A (ja) * 2013-09-24 2015-04-09 株式会社東芝 半導体発光素子及び半導体発光素子の製造方法
JP6472093B2 (ja) * 2014-03-31 2019-02-20 国立研究開発法人理化学研究所 紫外線発光素子及びそれを用いた電気機器
JP2015216352A (ja) * 2014-04-24 2015-12-03 国立研究開発法人理化学研究所 紫外発光ダイオードおよびそれを備える電気機器
KR102300718B1 (ko) * 2014-04-24 2021-09-09 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 자외선 발광 다이오드 및 그것을 구비한 전기 기기

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WO2017134713A1 (ja) 2017-08-10
JP2017139447A (ja) 2017-08-10

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