JP6892577B2 - イメージセンサ及びセンサ装置 - Google Patents

イメージセンサ及びセンサ装置 Download PDF

Info

Publication number
JP6892577B2
JP6892577B2 JP2017090592A JP2017090592A JP6892577B2 JP 6892577 B2 JP6892577 B2 JP 6892577B2 JP 2017090592 A JP2017090592 A JP 2017090592A JP 2017090592 A JP2017090592 A JP 2017090592A JP 6892577 B2 JP6892577 B2 JP 6892577B2
Authority
JP
Japan
Prior art keywords
electrode
tft
image sensor
gate electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017090592A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018190803A (ja
JP2018190803A5 (enExample
Inventor
関根　裕之
裕之 関根
Original Assignee
天馬微電子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 天馬微電子有限公司 filed Critical 天馬微電子有限公司
Priority to JP2017090592A priority Critical patent/JP6892577B2/ja
Priority to CN201810180180.4A priority patent/CN108807433B/zh
Priority to US15/938,008 priority patent/US10741606B2/en
Publication of JP2018190803A publication Critical patent/JP2018190803A/ja
Publication of JP2018190803A5 publication Critical patent/JP2018190803A5/ja
Application granted granted Critical
Publication of JP6892577B2 publication Critical patent/JP6892577B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2017090592A 2017-04-28 2017-04-28 イメージセンサ及びセンサ装置 Active JP6892577B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017090592A JP6892577B2 (ja) 2017-04-28 2017-04-28 イメージセンサ及びセンサ装置
CN201810180180.4A CN108807433B (zh) 2017-04-28 2018-03-05 图像传感器及传感器装置
US15/938,008 US10741606B2 (en) 2017-04-28 2018-03-28 Image sensor and sensor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017090592A JP6892577B2 (ja) 2017-04-28 2017-04-28 イメージセンサ及びセンサ装置

Publications (3)

Publication Number Publication Date
JP2018190803A JP2018190803A (ja) 2018-11-29
JP2018190803A5 JP2018190803A5 (enExample) 2020-04-16
JP6892577B2 true JP6892577B2 (ja) 2021-06-23

Family

ID=63915708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017090592A Active JP6892577B2 (ja) 2017-04-28 2017-04-28 イメージセンサ及びセンサ装置

Country Status (3)

Country Link
US (1) US10741606B2 (enExample)
JP (1) JP6892577B2 (enExample)
CN (1) CN108807433B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108305874B (zh) * 2017-01-12 2022-03-08 株式会社日本有机雷特显示器 半导体装置
CN109276268A (zh) * 2018-11-21 2019-01-29 京东方科技集团股份有限公司 X射线探测装置及其制造方法
WO2020129712A1 (ja) * 2018-12-20 2020-06-25 ソニーセミコンダクタソリューションズ株式会社 撮像装置
CN110047859A (zh) * 2019-04-24 2019-07-23 北京京东方传感技术有限公司 传感器及其制备方法
CN110391308B (zh) * 2019-09-19 2019-12-27 南京迪钛飞光电科技有限公司 一种平板探测器及其制造方法
CN111430386B (zh) * 2020-04-01 2023-11-10 京东方科技集团股份有限公司 光电探测器、显示基板及光电探测器的制作方法
JP7464447B2 (ja) * 2020-06-05 2024-04-09 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ
US12610636B2 (en) 2021-12-02 2026-04-21 Boe Technology Group Co., Ltd. Photoelectric sensor and substrate
JP2023173690A (ja) * 2022-05-26 2023-12-07 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2638286B1 (fr) * 1988-10-25 1990-12-07 Thomson Csf Dispositif photosensible du type a amplification du signal au niveau des points photosensibles
JP2692218B2 (ja) 1988-12-29 1997-12-17 ソニー株式会社 固体撮像素子
US5408113A (en) 1992-06-30 1995-04-18 Ricoh Company, Ltd. High sensitivity improved photoelectric imaging device with a high signal to noise ratio
JP3253179B2 (ja) 1992-06-30 2002-02-04 株式会社リコー 光電変換装置
JP4147094B2 (ja) * 2002-11-22 2008-09-10 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
JP4323827B2 (ja) * 2003-02-14 2009-09-02 キヤノン株式会社 固体撮像装置及び放射線撮像装置
US20070161165A1 (en) * 2006-01-12 2007-07-12 Toppoly Optoelectronics Corp. Systems and methods involving thin film transistors
US7615731B2 (en) * 2006-09-14 2009-11-10 Carestream Health, Inc. High fill-factor sensor with reduced coupling
JP2009147056A (ja) 2007-12-13 2009-07-02 Seiko Epson Corp 半導体装置及びその製造方法
TWI617029B (zh) * 2009-03-27 2018-03-01 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
KR101830196B1 (ko) 2010-02-12 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
KR101706291B1 (ko) * 2010-03-11 2017-02-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8928792B1 (en) * 2011-01-31 2015-01-06 Aptina Imaging Corporation CMOS image sensor with global shutter, rolling shutter, and a variable conversion gain, having pixels employing several BCMD transistors coupled to a single photodiode and dual gate BCMD transistors for charge storage and sensing
JP2013161810A (ja) * 2012-02-01 2013-08-19 Japan Display West Co Ltd 撮像装置およびその製造方法ならびに撮像表示システム
JP6384822B2 (ja) * 2013-11-07 2018-09-05 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ及びその製造方法
US20160013243A1 (en) * 2014-03-10 2016-01-14 Dpix, Llc Photosensor arrays for detection of radiation and process for the preparation thereof
WO2015141777A1 (ja) * 2014-03-20 2015-09-24 シャープ株式会社 光検出装置
US9881954B2 (en) * 2014-06-11 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6459271B2 (ja) * 2014-07-23 2019-01-30 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ及びその駆動方法
KR20160034200A (ko) * 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP6587497B2 (ja) * 2014-10-31 2019-10-09 株式会社半導体エネルギー研究所 半導体装置
US9871060B2 (en) * 2015-02-16 2018-01-16 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US10389961B2 (en) * 2015-04-09 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
EP3128742B1 (en) * 2015-08-03 2018-05-16 Fundació Institut de Ciències Fotòniques Image sensor with non-local readout circuit and optoelectronic device comprising said image sensor

Also Published As

Publication number Publication date
CN108807433B (zh) 2021-12-03
JP2018190803A (ja) 2018-11-29
CN108807433A (zh) 2018-11-13
US10741606B2 (en) 2020-08-11
US20180315792A1 (en) 2018-11-01

Similar Documents

Publication Publication Date Title
CN108807433B (zh) 图像传感器及传感器装置
US8901562B2 (en) Radiation imaging device, radiation imaging display system, and transistor
JP4307322B2 (ja) 放射線撮像装置及び放射線撮像システム
JP6384822B2 (ja) イメージセンサ及びその製造方法
US8519344B2 (en) Radiation imaging apparatus and radiation imaging system
CN102820337B (zh) 放射线摄像装置、放射线摄像显示系统和晶体管
JP6463136B2 (ja) 放射線検出装置及び放射線検出システム
JP4307230B2 (ja) 放射線撮像装置及び放射線撮像方法
US20130162833A1 (en) Imaging apparatus, radiation imaging system, and method for manufacturing imaging apparatus
TW200814309A (en) Radiation imaging apparatus and radiation imaging system
JP3624165B2 (ja) 電磁波検出装置
JP6152729B2 (ja) 撮像装置および撮像表示システム
JPH11145443A (ja) 光電変換装置、光電変換装置の駆動方法及びその光電変換装置を有するシステム
JP2017152656A (ja) イメージセンサおよびその製造方法
JP2013089869A (ja) 検出装置及び検出システム
US20110006191A1 (en) Image capture apparatus and radiation image capture system
US11528437B2 (en) Imaging device and electronic equipment
JP2004325261A (ja) 放射線画像撮像装置
JP6530600B2 (ja) 放射線検出装置及び放射線検出システム
JP3560298B2 (ja) 光電変換装置とその駆動方法及びそれを有するシステム
JP2015186005A (ja) 放射線撮像装置及び放射線撮像システム
JP6809935B2 (ja) 電磁波検出装置
JP2021132368A (ja) 撮像装置
JP2013033945A (ja) 検出装置及び検出システム

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20191108

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200117

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200302

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200302

TRDD Decision of grant or rejection written
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210325

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210406

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210419

R150 Certificate of patent or registration of utility model

Ref document number: 6892577

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250