JP6884241B1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 135
- 229910052751 metal Inorganic materials 0.000 claims abstract description 100
- 239000002184 metal Substances 0.000 claims abstract description 100
- 238000001816 cooling Methods 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000009434 installation Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 9
- 239000000498 cooling water Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- 238000004512 die casting Methods 0.000 description 1
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- 238000009499 grossing Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
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- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
- H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
- H05K9/0024—Shield cases mounted on a PCB, e.g. cans or caps or conformal shields
- H05K9/0026—Shield cases mounted on a PCB, e.g. cans or caps or conformal shields integrally formed from metal sheet
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4075—Mechanical elements
- H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts
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Abstract
Description
以下、本願の実施の形態1の構成について、図1から図4に従って説明する。図1に実施の形態1に係わる半導体装置100の外観を示す。また、図2にこの装置の全体構成を各構成要素に展開した斜視図を示す。図1および図2において、支持部材1に冷却板2を介して電力変換を行う半導体モジュール3a、3b、3c(以降複数ある場合は3a〜3cのように記載)が配置される。半導体モジュール3a〜3cは金属板4によって覆われ、その上に半導体モジュール3a〜3cの電力変換を制御するための制御基板5が設けられている。制御基板5は金属板4に設けられた制御基板固定部6a〜6gによって固定される。制御基板固定部6aは半導体モジュール3a〜3cの配置面に対向して設けられ、制御基板5の固定強度を向上させている。なお、金属板4以外の箇所に設けられる制御基板固定部6h〜6kもあり、制御基板5の端部を固定している。
以下、本願の実施の形態2について図9に基づいて説明する。図9は図6と同様の主要部断面図である。図9に示すように、本実施の形態の半導体装置は支持部材1と、冷却板2と、冷却板2に取り付けられ電力変換を行う半導体モジュール3a〜3cと、冷却板2上に配置される第一の金属板4bと、第一の金属板4bの上に取り付けられた第一の制御基板5aと、第一の金属板4b上に取り付けられる第二の金属板4cと第二の金属板4c上に配置される第二の制御基板5bと、冷却水流路を構成する下板8からなる。本図では省略しているが通常、第一の制御基板5aと第二の制御基板5bはFPCまたはハーネス、あるいは基板間コネクタ等を使い接続されている。
Claims (10)
- グランド電位に保たれた支持部材に冷却板を介して配置された半導体モジュールと、
前記半導体モジュールを制御するための制御基板を支える金属板と、を備え、
前記金属板は、前記支持部材に前記冷却板と共締めされ、前記支持部材によって支持されて前記半導体モジュールを覆うとともに、
前記半導体モジュールの対向範囲に前記制御基板を固定していることを特徴とする半導体装置。 - 前記支持部材に前記冷却板と前記金属板はネジで共締めされており、前記ネジの頭部座面は、前記金属板の上面より1段下がった前記冷却板に近い位置に設けられている請求項1記載の半導体装置
- 前記金属板は、前記半導体モジュールに接触している請求項1または請求項2に記載の半導体装置。
- 前記金属板は剛性を有し、前記半導体モジュールを前記冷却板に押し付ける構造を有する請求項1から請求項3のいずれか1項に記載の半導体装置。
- 前記金属板は貫通孔を有し、前記貫通孔を通して前記半導体モジュールの信号端子ピンが前記制御基板に接続されている請求項1から請求項4のいずれか1項に記載の半導体装置。
- 前記金属板には前記制御基板を固定する固定部があり、前記固定部はバーリング加工で成形されている請求項1から請求項5のいずれか1項に記載の半導体装置。
- 前記金属板には前記制御基板を固定する固定部があり、前記固定部は前記金属板に固着されたナットで構成されている請求項1から請求項6のいずれか1項に記載の半導体装置。
- 前記金属板には、前記半導体モジュールの高電圧部に対向して絶縁部材が設けられている請求項1から請求項7のいずれか1項に記載の半導体装置。
- 前記金属板には、前記半導体モジュールを覆う架橋部と前記架橋部の端に複数の突出部とが設けられた請求項1から請求項8のいずれか1項に記載の半導体装置。
- グランド電位に保たれた支持部材に冷却板を介して配置された半導体モジュールと、
前記半導体モジュールを制御するための第一の制御基板を支える第一の金属板と、
さらに第二の制御基板を支える第二の金属板と、を備え、
前記第一の金属板は前記支持部材によって支持されて前記半導体モジュールを覆うとともに、前記半導体モジュールの対向範囲に前記第一の制御基板を固定しており、
前記第二の金属板は前記支持部材に前記冷却板と前記第一の金属板と共締めされ、前記第一の制御基板の部品搭載面を覆うとともに、前記第一の制御基板の対向範囲に前記第二の制御基板を固定していることを特徴とする半導体装置。
Priority Applications (3)
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JP2020012162A JP6884241B1 (ja) | 2020-01-29 | 2020-01-29 | 半導体装置 |
US17/128,536 US11557528B2 (en) | 2020-01-29 | 2020-12-21 | Semiconductor device |
CN202110085172.3A CN113194666A (zh) | 2020-01-29 | 2021-01-21 | 半导体装置 |
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JP2020012162A JP6884241B1 (ja) | 2020-01-29 | 2020-01-29 | 半導体装置 |
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JP6884241B1 true JP6884241B1 (ja) | 2021-06-09 |
JP2021118657A JP2021118657A (ja) | 2021-08-10 |
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JP2020012162A Active JP6884241B1 (ja) | 2020-01-29 | 2020-01-29 | 半導体装置 |
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US (1) | US11557528B2 (ja) |
JP (1) | JP6884241B1 (ja) |
CN (1) | CN113194666A (ja) |
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DE102022124513A1 (de) * | 2022-09-23 | 2024-03-28 | Rolls-Royce Deutschland Ltd & Co Kg | Leiterplattenanordnung und Verfahren zur Herstellung einer Leiterplattenanordnung |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS59155158A (ja) * | 1983-02-23 | 1984-09-04 | Fujitsu Ltd | 半導体装置の冷却構造 |
DE10220047A1 (de) * | 2002-05-04 | 2003-11-20 | Jungheinrich Ag | Antriebssystem mit Umrichtersteuerung für Niederspannungs-Drehstrommotoren |
JP3771518B2 (ja) * | 2002-05-31 | 2006-04-26 | 三菱電機株式会社 | 電力変換装置 |
US10321585B2 (en) | 2008-07-29 | 2019-06-11 | Hitachi, Ltd. | Power conversion apparatus and electric vehicle |
JP4657329B2 (ja) | 2008-07-29 | 2011-03-23 | 日立オートモティブシステムズ株式会社 | 電力変換装置および電動車両 |
JP5257599B2 (ja) * | 2008-11-14 | 2013-08-07 | ダイキン工業株式会社 | 冷却部材の取付構造 |
WO2012029165A1 (ja) * | 2010-09-02 | 2012-03-08 | トヨタ自動車株式会社 | 半導体モジュール |
JP5624875B2 (ja) * | 2010-12-27 | 2014-11-12 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP5351907B2 (ja) * | 2011-01-13 | 2013-11-27 | アイシン・エィ・ダブリュ株式会社 | 半導体装置 |
JP5580789B2 (ja) * | 2011-07-13 | 2014-08-27 | トヨタ自動車株式会社 | 電力変換装置 |
WO2013118222A1 (ja) * | 2012-02-07 | 2013-08-15 | 富士電機株式会社 | 電力変換装置 |
JP5885773B2 (ja) * | 2014-04-29 | 2016-03-15 | 三菱電機株式会社 | 電力変換装置 |
US10091903B2 (en) | 2015-02-19 | 2018-10-02 | Hitachi Automotive Systems, Ltd. | Power conversion device having bus bar with improved vibration resistance |
EP3522690B2 (en) * | 2018-02-02 | 2023-12-06 | Kabushiki Kaisha Toyota Jidoshokki | Inverter |
JP2019134648A (ja) * | 2018-02-02 | 2019-08-08 | 株式会社豊田自動織機 | インバータ |
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- 2020-01-29 JP JP2020012162A patent/JP6884241B1/ja active Active
- 2020-12-21 US US17/128,536 patent/US11557528B2/en active Active
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US11557528B2 (en) | 2023-01-17 |
US20210233830A1 (en) | 2021-07-29 |
JP2021118657A (ja) | 2021-08-10 |
CN113194666A (zh) | 2021-07-30 |
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