JP6876895B2 - 結晶性酸化物半導体膜、半導体装置 - Google Patents

結晶性酸化物半導体膜、半導体装置 Download PDF

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JP6876895B2
JP6876895B2 JP2015035938A JP2015035938A JP6876895B2 JP 6876895 B2 JP6876895 B2 JP 6876895B2 JP 2015035938 A JP2015035938 A JP 2015035938A JP 2015035938 A JP2015035938 A JP 2015035938A JP 6876895 B2 JP6876895 B2 JP 6876895B2
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oxide semiconductor
layer
film
crystalline oxide
substrate
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JP2016157878A5 (enExample
JP2016157878A (ja
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真也 織田
真也 織田
貴博 佐々木
貴博 佐々木
俊実 人羅
俊実 人羅
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Flosfia Inc
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JP2015035938A 2015-02-25 2015-02-25 結晶性酸化物半導体膜、半導体装置 Active JP6876895B2 (ja)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024122463A1 (ja) 2022-12-06 2024-06-13 信越化学工業株式会社 結晶性酸化物半導体膜、積層構造体、及び半導体装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109423690B (zh) * 2017-08-21 2022-09-16 株式会社Flosfia 用于制造结晶膜的方法
JP7160318B2 (ja) * 2018-08-01 2022-10-25 国立研究開発法人物質・材料研究機構 半導体装置および半導体装置の製造方法
JP6934852B2 (ja) 2018-12-18 2021-09-15 信越化学工業株式会社 酸化ガリウム膜の製造方法
EP3960915A4 (en) * 2019-04-24 2022-12-21 NGK Insulators, Ltd. SEMICONDUCTOR FILM
JP7265624B2 (ja) * 2019-06-28 2023-04-26 日本碍子株式会社 半導体膜
WO2022064783A1 (ja) * 2020-09-24 2022-03-31 日本碍子株式会社 積層構造体
EP4411021A1 (en) 2021-09-30 2024-08-07 Shin-Etsu Chemical Co., Ltd. Laminated structure, semiconductor device, and method for forming crystalline oxide film

Family Cites Families (6)

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JP3929964B2 (ja) * 2003-11-14 2007-06-13 独立行政法人科学技術振興機構 薄膜積層構造体の製造方法
JP2009013028A (ja) * 2007-07-06 2009-01-22 Nippon Light Metal Co Ltd 酸化アルミニウム−酸化ガリウム固溶体およびその製造方法
JP5665676B2 (ja) * 2011-07-11 2015-02-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物エピタキシャル基板およびその製造方法
JP6142358B2 (ja) * 2011-09-08 2017-06-07 株式会社タムラ製作所 Ｇａ２Ｏ３系半導体素子
JP5397795B1 (ja) * 2013-06-21 2014-01-22 Ｒｏｃａ株式会社 半導体装置及びその製造方法、結晶及びその製造方法
JP6152514B2 (ja) * 2013-10-17 2017-06-28 株式会社Flosfia 半導体装置及びその製造方法、並びに結晶及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024122463A1 (ja) 2022-12-06 2024-06-13 信越化学工業株式会社 結晶性酸化物半導体膜、積層構造体、及び半導体装置
KR20250119538A (ko) 2022-12-06 2025-08-07 신에쓰 가가꾸 고교 가부시끼가이샤 결정성 산화물 반도체막, 적층 구조체, 및 반도체 장치
EP4632797A1 (en) 2022-12-06 2025-10-15 Shin-Etsu Chemical Co., Ltd. Crystalline oxide semiconductor film, laminated structure, and semiconductor device

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