JP6875441B2 - 炭化ケイ素含有結晶基板の処理方法、炭化ケイ素チップ、及び処理チャンバー - Google Patents
炭化ケイ素含有結晶基板の処理方法、炭化ケイ素チップ、及び処理チャンバー Download PDFInfo
- Publication number
- JP6875441B2 JP6875441B2 JP2019071272A JP2019071272A JP6875441B2 JP 6875441 B2 JP6875441 B2 JP 6875441B2 JP 2019071272 A JP2019071272 A JP 2019071272A JP 2019071272 A JP2019071272 A JP 2019071272A JP 6875441 B2 JP6875441 B2 JP 6875441B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- substrate
- crystal substrate
- silicon
- thermal decomposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 177
- 238000000034 method Methods 0.000 title claims description 126
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 125
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 124
- 239000013078 crystal Substances 0.000 title claims description 49
- 229910052710 silicon Inorganic materials 0.000 title claims description 40
- 239000010703 silicon Substances 0.000 title claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 27
- 238000011282 treatment Methods 0.000 title description 14
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 43
- 235000012431 wafers Nutrition 0.000 claims description 40
- 238000005530 etching Methods 0.000 claims description 38
- 229910052799 carbon Inorganic materials 0.000 claims description 36
- 238000012545 processing Methods 0.000 claims description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- 238000000197 pyrolysis Methods 0.000 claims description 27
- 230000003628 erosive effect Effects 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 14
- 238000001039 wet etching Methods 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 8
- 238000009760 electrical discharge machining Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000001419 dependent effect Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 description 77
- 239000000463 material Substances 0.000 description 15
- 238000000227 grinding Methods 0.000 description 14
- 238000012800 visualization Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 2
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
- B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Dicing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
以下の詳細な説明は、例示の目的で、本発明を実施し得る具体的な細部及び実施形態を示す添付の図面を参照する。
102C チップ
102P デブリ層
102S1 第1の主面
102S2 第2の主面
102U 側面
104 レーザー光
106 エッチャント
108_1 第1のサイクル
108_2 第2のサイクル
110 キャリア
114 マスク
220 EDM装置
330 チップキャリアテープ
400、400a、400b 処理チャンバー
440 可動性基板支持構造体
442 接地電極
444 RF電源
446 ハウジング
448 窓
452 液体エッチャント
Claims (29)
- 炭化ケイ素含有結晶基板の処理方法であって、
前記基板の表面を熱分解して前記炭化ケイ素含有結晶基板上にケイ素と炭素とを含有するデブリ層を生成すること;及び
前記ケイ素と炭素とを含有するデブリ層を除去すること;
を含み、
前記熱分解が前記表面に対してマイクロスパークエロージョンを行うことを含み、
前記熱分解及び前記除去が少なくとも1回繰り返される方法。 - 前記熱分解が前記表面へエネルギー供給することを含む、請求項1に記載の方法。
- 前記エネルギーが約1J/cm2〜10J/cm2未満の範囲の強度で前記表面に供給される、請求項2に記載の方法。
- 前記エネルギーが少なくとも1つのエネルギー供給装置を使用して前記表面に供給される、請求項2又は3に記載の方法。
- 前記表面へ前記エネルギーを供給することが、前記炭化ケイ素含有結晶基板に対して少なくとも1つのエネルギー供給装置を動かすこと、又はその逆であることを含む、請求項4に記載の方法。
- 前記少なくとも1つのエネルギー供給装置を前記動かすことが、前記炭化ケイ素含有結晶基板を横切って前記少なくとも1つのエネルギー供給装置を走査することとステッピングすることとの組み合わせを含み、その結果前記熱分解された表面が炭化ケイ素の熱分解されていない領域と隣接する熱分解された炭化ケイ素の1つ以上の領域を含む、請求項5に記載の方法。
- 前記炭化ケイ素含有結晶基板が複数のチップを含む炭化ケイ素ウェハであり、
前記熱分解された炭化ケイ素の前記1つ以上の領域が前記複数のチップ間の所定の分離領域に位置する、請求項6に記載の方法。 - 前記少なくとも1回繰り返すことが、前記熱分解及び前記除去によって前記炭化ケイ素含有結晶基板に形成される開口部が前記炭化ケイ素含有結晶基板を完全に貫通するまで前記熱分解及び前記除去を繰り返すことを含む、請求項1〜7のいずれか1項に記載の方法。
- 前記熱分解が前記表面をレーザー光で照射することを含む、請求項1〜8のいずれか1項に記載の方法。
- 前記表面に対して前記マイクロスパークエロージョンを行うことが前記表面上に少なくとも1つのワイヤを配置することを含む、請求項1〜9のいずれか1項に記載の方法。
- 前記表面に対して前記マイクロスパークエロージョンを行うことが前記表面上に複数のワイヤを配置することを含む、請求項1〜10のいずれか1項に記載の方法。
- 前記複数のワイヤが格子として配置される、請求項11に記載の方法。
- 前記炭化ケイ素含有結晶基板が複数のチップを含む炭化ケイ素ウェハであり、
前記複数のワイヤが前記複数のチップ間の所定の分離領域の上に配置される、請求項11又は12に記載の方法。 - 前記ケイ素と炭素とを含有するデブリ層を前記除去することが前記デブリ層を除去することに適したエッチャントでエッチングすることを含む、請求項1〜13のいずれか1項に記載の方法。
- 前記エッチングがプラズマエッチング又はウェットエッチングを含む、請求項14に記載の方法。
- 前記エッチャントがAr、O2、及びSF6を含むか、これらから構成されるか、又はこれらから本質的に構成される、請求項15に記載の方法。
- 前記炭化ケイ素含有結晶基板が複数のチップを含む炭化ケイ素ウェハであり、前記ウェハが前記複数のチップの活性領域を含む前面及び前記前面とは反対側の裏面を有する、請求項1〜16のいずれか1項に記載の方法。
- 前記前面がキャリアに向くように前記キャリア上に前記ウェハを取り付けることであって、前記表面を前記熱分解すること及び前記ケイ素と炭素とを含有するデブリ層を前記除去することが前記ウェハの前記裏面で行われることを更に含む、請求項17に記載の方法。
- 前記エッチャントから前記炭化ケイ素含有結晶基板の少なくとも1つの領域をマスクするように構成された前記炭化ケイ素含有結晶基板上の構造化マスク層を配置することを更に含む、請求項14〜16、並びに請求項14に従属する請求項17及び18のいずれか1項に記載の方法。
- 前記構造化マスク層を前記配置することが、前記炭化ケイ素含有結晶基板上に非構造化マスク層を配置することと、レーザーを使用して前記非構造化マスク層を構造化することとを含み、
前記レーザーが前記表面の前記熱分解のために更に使用される、請求項19に記載の方法。 - 前記裏面がキャリアに向くように前記キャリア上に前記ウェハを取り付けることであって、前記表面を前記熱分解すること及び前記ケイ素と炭素とを含有するデブリ層を前記除去することが前記ウェハの前記前面で行われることを更に含む、請求項17、又は請求項17に従属する請求項19に記載の方法。
- 前記表面を前記熱分解すること及び前記ケイ素と炭素とを含有するデブリ層を前記除去することが共通の処理チャンバーの中で行われる、請求項1〜21のいずれか1項に記載の方法。
- 前記熱分解が1μm〜10μmの厚さの前記ケイ素と炭素とを含有するデブリ層を生成するように構成される、請求項1〜22のいずれか1項に記載の方法。
- 処理チャンバーであって、
炭化ケイ素含有結晶基板の表面を熱分解して前記炭化ケイ素含有結晶基板上にケイ素と炭素とを含有するデブリ層を生成するように構成されたエネルギー供給装置;及び
前記ケイ素と炭素とを含有するデブリ層を除去するように構成された除去装置;
を含み、前記熱分解が前記表面に対してマイクロスパークエロージョンを行うことを含み、前記熱分解及び前記除去を少なくとも1回繰り返すように更に構成される、処理チャンバー。 - 前記処理チャンバーが、前記熱分解と前記除去との間に前記基板が前記処理チャンバーの中にとどまるように更に構成される、請求項24に記載の処理チャンバー。
- 前記除去装置がエッチング装置である、請求項24又は25に記載の処理チャンバー。
- 前記エネルギー供給装置が少なくとも1つのレーザー又はマイクロスパークエロージョン装置を含む、請求項24〜26のいずれか1項に記載の処理チャンバー。
- 前記基板を前記熱分解のための位置から前記エッチングのための位置へ、及びその逆に移動させるように構成された可動性基板支持構造体を更に含む、請求項26、又は請求項26に従属する請求項27に記載の処理チャンバー。
- 前記可動性基板支持構造体が、前記エネルギー供給装置が前記基板を横切って走査するために、前記熱分解中に前記基板を動かすように更に構成される、請求項28に記載の処理チャンバー。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018107922.2 | 2018-04-04 | ||
DE102018107922.2A DE102018107922A1 (de) | 2018-04-04 | 2018-04-04 | Verfahren zum Verarbeiten eines Siliciumcarbid enthaltenden kristallinen Substrats, Siliciumcarbidchip und Verarbeitungskammer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019186546A JP2019186546A (ja) | 2019-10-24 |
JP6875441B2 true JP6875441B2 (ja) | 2021-05-26 |
Family
ID=67991593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019071272A Active JP6875441B2 (ja) | 2018-04-04 | 2019-04-03 | 炭化ケイ素含有結晶基板の処理方法、炭化ケイ素チップ、及び処理チャンバー |
Country Status (3)
Country | Link |
---|---|
US (1) | US11077525B2 (ja) |
JP (1) | JP6875441B2 (ja) |
DE (1) | DE102018107922A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7325194B2 (ja) * | 2019-02-19 | 2023-08-14 | 三菱重工業株式会社 | 溶接物製造方法、溶接物製造システム及び溶接物 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5415126A (en) * | 1993-08-16 | 1995-05-16 | Dow Corning Corporation | Method of forming crystalline silicon carbide coatings at low temperatures |
US5631190A (en) * | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
JPH1017382A (ja) * | 1996-06-28 | 1998-01-20 | Mitsubishi Pencil Co Ltd | 炭化珪素成形体の製造方法 |
JP3616872B2 (ja) | 2000-09-14 | 2005-02-02 | 住友電気工業株式会社 | ダイヤモンドウエハのチップ化方法 |
US7064010B2 (en) | 2003-10-20 | 2006-06-20 | Micron Technology, Inc. | Methods of coating and singulating wafers |
JP4683989B2 (ja) * | 2004-04-20 | 2011-05-18 | 昭和電工株式会社 | 化合物半導体発光素子ウェハーの製造方法 |
JP2007305646A (ja) * | 2006-05-09 | 2007-11-22 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
JP4748006B2 (ja) * | 2006-09-12 | 2011-08-17 | パナソニック株式会社 | ウエハ加工方法及び装置 |
JP4669957B2 (ja) * | 2007-03-02 | 2011-04-13 | 日本電気株式会社 | グラフェンを用いる半導体装置及びその製造方法 |
US20150053650A1 (en) * | 2012-04-12 | 2015-02-26 | Mitsubishi Electric Corporation | Wire discharge machining apparatus and manufacturing method for semiconductor wafers using the same |
JP6062287B2 (ja) | 2013-03-01 | 2017-01-18 | 株式会社ディスコ | ウエーハの加工方法 |
US9449876B2 (en) * | 2014-01-17 | 2016-09-20 | Infineon Technologies Ag | Singulation of semiconductor dies with contact metallization by electrical discharge machining |
WO2016114934A1 (en) | 2015-01-13 | 2016-07-21 | Rofin-Sinar Technologies Inc. | Method and system for scribing brittle material followed by chemical etching |
US9704748B2 (en) | 2015-06-25 | 2017-07-11 | Infineon Technologies Ag | Method of dicing a wafer |
US9960037B2 (en) * | 2015-08-03 | 2018-05-01 | Board Of Trustees Of Michigan State University | Laser assisted SiC growth on silicon |
JP6621304B2 (ja) * | 2015-11-10 | 2019-12-18 | 学校法人関西学院 | 半導体ウエハの製造方法 |
JP2018156973A (ja) * | 2017-03-15 | 2018-10-04 | 株式会社ディスコ | ウェーハの加工方法 |
-
2018
- 2018-04-04 DE DE102018107922.2A patent/DE102018107922A1/de active Pending
-
2019
- 2019-04-03 US US16/374,265 patent/US11077525B2/en active Active
- 2019-04-03 JP JP2019071272A patent/JP6875441B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2019186546A (ja) | 2019-10-24 |
US20190308274A1 (en) | 2019-10-10 |
US11077525B2 (en) | 2021-08-03 |
DE102018107922A1 (de) | 2019-10-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5689449B2 (ja) | 発光素子の製造方法 | |
JP7320130B2 (ja) | 緩和された正の湾曲を有する炭化ケイ素ウェーハを処理するための方法 | |
KR102024364B1 (ko) | 플라즈마 에칭을 갖는 하이브리드 멀티-스텝 레이저 스크라이빙 프로세스를 이용한 웨이퍼 다이싱 | |
CN109309047B (zh) | 处理衬底的方法 | |
CN110691671A (zh) | 用于具有限定地定向的改性线的晶片制造的方法 | |
EP1494271A1 (en) | Method for dicing substrate | |
KR101154133B1 (ko) | 캐리어 수명을 갖는 독립적 단결정 재료 및 그 제조 방법 | |
KR20120036896A (ko) | 발광 다이오드(led) 웨이퍼 및 생성 장치의 전반부 말미 스크라이빙 | |
JP2001284292A (ja) | 半導体ウエハーのチップ分割方法 | |
US20130137244A1 (en) | Method and apparatus for reconditioning a carrier wafer for reuse | |
US11712749B2 (en) | Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devices | |
KR20140039048A (ko) | 플라즈마 에칭을 갖는 하이브리드 갈바닉 레이저 스크라이빙 프로세스를 이용한 웨이퍼 다이싱 | |
TWI699250B (zh) | 基板處理方法 | |
KR20170031070A (ko) | 기판 처리 방법 | |
JP6875441B2 (ja) | 炭化ケイ素含有結晶基板の処理方法、炭化ケイ素チップ、及び処理チャンバー | |
CN108350604B (zh) | 用于制造半导体层的方法和装置 | |
US20180061695A1 (en) | Method for processing a wafer and method for processing a carrier | |
CN115555735A (zh) | 一种碳化硅晶锭的激光剥离方法及其装置 | |
JP2021182622A (ja) | 基板を製造する方法および基板を製造する為のシステム | |
US20240120284A1 (en) | Carbon Assisted Semiconductor Dicing And Method | |
JP7531151B2 (ja) | 窒化ガリウム半導体装置の製造方法 | |
JP2011159827A (ja) | 透明基板の改質領域形成方法 | |
CN115555734A (zh) | 一种碳化硅晶锭的激光切片方法及其装置 | |
CN115555736A (zh) | 一种激光剥离碳化硅晶锭的方法及装置 | |
WO2012162704A2 (en) | Method and apparatus for reconditioning a carrier wafer for reuse |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190410 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200629 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200707 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201006 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210204 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210323 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210422 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6875441 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE Ref document number: 6875441 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |