JP6866852B2 - 多結晶誘電体薄膜および容量素子 - Google Patents
多結晶誘電体薄膜および容量素子 Download PDFInfo
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- JP6866852B2 JP6866852B2 JP2017565580A JP2017565580A JP6866852B2 JP 6866852 B2 JP6866852 B2 JP 6866852B2 JP 2017565580 A JP2017565580 A JP 2017565580A JP 2017565580 A JP2017565580 A JP 2017565580A JP 6866852 B2 JP6866852 B2 JP 6866852B2
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- thin film
- dielectric thin
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- polycrystalline dielectric
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- 239000010409 thin film Substances 0.000 title claims description 84
- 239000000203 mixture Substances 0.000 claims description 13
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 27
- 150000002500 ions Chemical class 0.000 description 24
- 239000000758 substrate Substances 0.000 description 23
- 239000013078 crystal Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910001427 strontium ion Inorganic materials 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000000224 chemical solution deposition Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001683 neutron diffraction Methods 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910001422 barium ion Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
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- 150000002831 nitrogen free-radicals Chemical class 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
前記ペロブスカイト型酸窒化物が組成式AaBbOoNn(a+b+o+n=5)で表され、
a/b>1
n≧0.7
であることを特徴とする。
前記BがTa,Nb,Ti,Wから選ばれる1種類以上の元素であることが好ましい。
=2×4/5+3×1/5
=2.2 ・・・式(1)
=5×4/5+4×1/5
=4.8 ・・・式(2)
次に、薄膜キャパシタ1の製造方法について説明する。以下、Aサイト原子をSr、Bサイト原子をTaとする場合について説明するが、他の種類の原子を用いる場合でも同様である。
まず、成膜用ターゲットとして用いるSr2Ta2O7焼結体の原料として、SrCO3粉末およびTa2O5粉末を準備した。Sr/Taのモル比が1となるようにSrCO3粉末およびTa2O5粉末を秤量した。
SrCO3粉末およびTa2O5粉末の代わりにLa2O3粉末およびTiO2粉末を用いた点以外は実験例1と同様にして実施例11および比較例11の薄膜サンプルを作製し、各種測定を行った。さらに、BaO粉末およびTa2O5を用いた点以外は実験例1と同様にして実施例12および比較例12の薄膜サンプルを作製し、各種測定を行った。さらに、Nd2O3粉末およびTiO2粉末を用いた点以外は実験例1と同様にして実施例13および比較例13の薄膜サンプルを作製し、各種測定を行った。結果を表2に示す。なお、実験例2で得られた実施例の薄膜サンプルについてXRD測定を行った。XRD測定により、実験例2の実施例および比較例も全てエピタキシャル膜ではなく多結晶薄膜であることを確認した。さらに、Nの配置がcis型であることを確認した。また、実施例11および比較例11に関して、LaイオンおよびTiイオンの価数をXPSのケミカルシフトから判定し、原料から価数の変化がないことを確認した。具体的には、Laイオンの価数は3で、Tiイオンの価数は4であった。実施例12および比較例12に関して、BaイオンおよびTaイオンの価数をXPSのケミカルシフトから判定し、原料から価数の変化がないことを確認した。具体的には、Baイオンの価数は2で、Taイオンの価数は5であった。さらに、実施例13および比較例13に関して、NdイオンおよびTiイオンの価数をXPSのケミカルシフトから判定し、原料から価数の変化がないことを確認した。具体的には、Ndイオンの価数は3で、Tiイオンの価数は4であった。
実施例1(n=0.8)について、nの値を変化させて実施例21および比較例21,22を得た。結果を表3に示す。
11・・・基板
12・・・下部電極
13・・・多結晶誘電体薄膜
14・・・上部電極
Claims (4)
- 主組成がペロブスカイト型酸窒化物である多結晶誘電体薄膜であって、
前記ペロブスカイト型酸窒化物が組成式AaBbOoNn(a+b+o+n=5)で表され、
a/b>1
n≧0.7
であり、
tanδが10%以下であることを特徴とする多結晶誘電体薄膜。 - 前記AがSr,Ba,Ca,La,Ce,Pr,Nd,Naから選ばれる1種類以上の元素であり、
前記BがTa,Nb,Ti,Wから選ばれる1種類以上の元素である請求項1に記載の多結晶誘電体薄膜。 - BO4N2の8面体構造を有し、前記8面体構造中におけるNの配置がcis型である請求項1または2に記載の多結晶誘電体薄膜。
- 請求項1〜3のいずれかに記載の多結晶誘電体薄膜を有する容量素子。
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