JP6862321B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6862321B2
JP6862321B2 JP2017176264A JP2017176264A JP6862321B2 JP 6862321 B2 JP6862321 B2 JP 6862321B2 JP 2017176264 A JP2017176264 A JP 2017176264A JP 2017176264 A JP2017176264 A JP 2017176264A JP 6862321 B2 JP6862321 B2 JP 6862321B2
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JP
Japan
Prior art keywords
trench
trenches
cell
semiconductor layer
field plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017176264A
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English (en)
Japanese (ja)
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JP2019054071A (ja
JP2019054071A5 (enExample
Inventor
達也 西脇
達也 西脇
健太郎 一関
健太郎 一関
喜久夫 相田
喜久夫 相田
浩平 大麻
浩平 大麻
洪 洪
洪 洪
博 松葉
博 松葉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2017176264A priority Critical patent/JP6862321B2/ja
Priority to CN201810052145.4A priority patent/CN109509785B/zh
Priority to US15/903,955 priority patent/US20190081173A1/en
Publication of JP2019054071A publication Critical patent/JP2019054071A/ja
Publication of JP2019054071A5 publication Critical patent/JP2019054071A5/ja
Application granted granted Critical
Publication of JP6862321B2 publication Critical patent/JP6862321B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

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  • Electrodes Of Semiconductors (AREA)
JP2017176264A 2017-09-14 2017-09-14 半導体装置 Active JP6862321B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017176264A JP6862321B2 (ja) 2017-09-14 2017-09-14 半導体装置
CN201810052145.4A CN109509785B (zh) 2017-09-14 2018-01-19 半导体装置
US15/903,955 US20190081173A1 (en) 2017-09-14 2018-02-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017176264A JP6862321B2 (ja) 2017-09-14 2017-09-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2019054071A JP2019054071A (ja) 2019-04-04
JP2019054071A5 JP2019054071A5 (enExample) 2019-10-31
JP6862321B2 true JP6862321B2 (ja) 2021-04-21

Family

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Family Applications (1)

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JP2017176264A Active JP6862321B2 (ja) 2017-09-14 2017-09-14 半導体装置

Country Status (3)

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US (1) US20190081173A1 (enExample)
JP (1) JP6862321B2 (enExample)
CN (1) CN109509785B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7157719B2 (ja) * 2019-09-09 2022-10-20 株式会社東芝 半導体装置の製造方法
JP7242486B2 (ja) * 2019-09-13 2023-03-20 株式会社東芝 半導体装置
CN115053352A (zh) * 2020-02-07 2022-09-13 罗姆股份有限公司 半导体装置
JP7297708B2 (ja) * 2020-03-19 2023-06-26 株式会社東芝 半導体装置
US11329150B2 (en) * 2020-04-14 2022-05-10 Nxp Usa, Inc. Termination for trench field plate power MOSFET
JP7337756B2 (ja) 2020-07-30 2023-09-04 株式会社東芝 半導体装置
JP7319754B2 (ja) * 2020-08-19 2023-08-02 株式会社東芝 半導体装置
JP7392612B2 (ja) * 2020-08-26 2023-12-06 株式会社デンソー 半導体装置
JP7392613B2 (ja) * 2020-08-26 2023-12-06 株式会社デンソー 半導体装置
US11621331B2 (en) * 2020-09-10 2023-04-04 Semiconductor Components Industries, Llc Electronic device including a charge storage component
JP7374871B2 (ja) * 2020-09-11 2023-11-07 株式会社東芝 半導体装置
JP7532172B2 (ja) * 2020-09-18 2024-08-13 株式会社東芝 半導体装置
JP7492438B2 (ja) * 2020-11-02 2024-05-29 株式会社東芝 半導体装置
JP7474214B2 (ja) * 2021-03-17 2024-04-24 株式会社東芝 半導体装置
WO2022202009A1 (ja) * 2021-03-26 2022-09-29 ローム株式会社 半導体装置
JP7596216B2 (ja) 2021-05-27 2024-12-09 株式会社東芝 半導体装置
JP7739064B2 (ja) * 2021-06-25 2025-09-16 三菱電機株式会社 絶縁ゲートバイポーラトランジスタおよびゲートドライバ回路
JP7526152B2 (ja) 2021-09-15 2024-07-31 株式会社東芝 半導体装置
JP7720756B2 (ja) * 2021-09-21 2025-08-08 株式会社東芝 半導体装置
JP7726773B6 (ja) 2021-12-17 2025-09-19 株式会社東芝 半導体装置及びその製造方法
JP7692378B2 (ja) * 2022-02-15 2025-06-13 株式会社東芝 半導体装置
JPWO2024053485A1 (enExample) * 2022-09-07 2024-03-14
WO2024053486A1 (ja) * 2022-09-07 2024-03-14 ローム株式会社 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4150496B2 (ja) * 2000-12-28 2008-09-17 株式会社日立製作所 半導体装置及びその製造方法
JP2006202931A (ja) * 2005-01-20 2006-08-03 Renesas Technology Corp 半導体装置およびその製造方法
US20100264486A1 (en) * 2009-04-20 2010-10-21 Texas Instruments Incorporated Field plate trench mosfet transistor with graded dielectric liner thickness
US8608074B2 (en) * 2011-12-20 2013-12-17 Seiko Epson Corporation Method and apparatus for locating and decoding machine-readable symbols
JP2013258327A (ja) * 2012-06-13 2013-12-26 Toshiba Corp 半導体装置及びその製造方法
JP2014187141A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 半導体装置
JP6231377B2 (ja) * 2013-12-25 2017-11-15 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP6203697B2 (ja) * 2014-09-30 2017-09-27 株式会社東芝 半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN109509785B (zh) 2022-06-28
CN109509785A (zh) 2019-03-22
JP2019054071A (ja) 2019-04-04
US20190081173A1 (en) 2019-03-14

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