JP6858689B2 - 処理液及びパターン形成方法 - Google Patents

処理液及びパターン形成方法 Download PDF

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JP6858689B2
JP6858689B2 JP2017206436A JP2017206436A JP6858689B2 JP 6858689 B2 JP6858689 B2 JP 6858689B2 JP 2017206436 A JP2017206436 A JP 2017206436A JP 2017206436 A JP2017206436 A JP 2017206436A JP 6858689 B2 JP6858689 B2 JP 6858689B2
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treatment liquid
acetate
solvent
mpa
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JP2018081306A (ja
JP2018081306A5 (enrdf_load_stackoverflow
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上村　哲也
上村　　哲也
三千紘 白川
三千紘 白川
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Fujifilm Corp
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Fujifilm Corp
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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2017206436A 2016-11-07 2017-10-25 処理液及びパターン形成方法 Active JP6858689B2 (ja)

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TW106138004A TWI714811B (zh) 2016-11-07 2017-11-03 處理液及圖案形成方法

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JP2016217599 2016-11-07
JP2016217599 2016-11-07

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JP2018081306A JP2018081306A (ja) 2018-05-24
JP2018081306A5 JP2018081306A5 (enrdf_load_stackoverflow) 2019-04-18
JP6858689B2 true JP6858689B2 (ja) 2021-04-14

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JP (1) JP6858689B2 (enrdf_load_stackoverflow)
TW (1) TWI714811B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101910157B1 (ko) * 2018-08-06 2018-10-19 영창케미칼 주식회사 유무기 하이브리드 포토레지스트 공정액 조성물
EP4074739A4 (en) * 2019-12-09 2023-06-14 FUJIFILM Corporation PROCESSING LIQUID AND PATTERN FORMING METHOD
JP7465946B2 (ja) * 2020-02-20 2024-04-11 富士フイルム株式会社 処理液、パターン形成方法
TWI792260B (zh) * 2021-04-09 2023-02-11 晶瑞光電股份有限公司 利用金屬掀離製程的半導體元件製造方法及其製成之半導體元件

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5002360B2 (ja) * 2007-07-23 2012-08-15 富士フイルム株式会社 パターン形成方法
JP5771361B2 (ja) * 2010-04-22 2015-08-26 富士フイルム株式会社 パターン形成方法、化学増幅型レジスト組成物、及び、レジスト膜
JP5629520B2 (ja) * 2010-07-28 2014-11-19 富士フイルム株式会社 パターン形成方法及びこの方法に用いられる有機系処理液
JP5557656B2 (ja) * 2010-09-01 2014-07-23 東京応化工業株式会社 レジストパターン形成方法
JP5767919B2 (ja) * 2010-09-17 2015-08-26 富士フイルム株式会社 パターン形成方法
JP2012181523A (ja) * 2011-02-28 2012-09-20 Rohm & Haas Electronic Materials Llc 現像剤組成物、およびフォトリソグラフィパターンを形成する方法
JP5514759B2 (ja) * 2011-03-25 2014-06-04 富士フイルム株式会社 レジストパターン形成方法、レジストパターン、有機溶剤現像用の架橋性ネガ型化学増幅型レジスト組成物、レジスト膜、及びレジスト塗布マスクブランクス
JP5807510B2 (ja) * 2011-10-27 2015-11-10 信越化学工業株式会社 パターン形成方法及びレジスト組成物
JP5764589B2 (ja) * 2012-10-31 2015-08-19 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の収容容器、並びに、これらを使用したパターン形成方法及び電子デバイスの製造方法
US9057960B2 (en) * 2013-02-04 2015-06-16 International Business Machines Corporation Resist performance for the negative tone develop organic development process
JP6363431B2 (ja) * 2014-08-27 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102025581B1 (ko) * 2014-12-26 2019-09-26 후지필름 가부시키가이샤 유기계 처리액 및 패턴 형성 방법
JP2018072358A (ja) * 2015-03-02 2018-05-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物及び感活性光線性又は感放射線性膜
WO2016157988A1 (ja) * 2015-03-31 2016-10-06 富士フイルム株式会社 上層膜形成用組成物、パターン形成方法、レジストパターン、及び、電子デバイスの製造方法
JP6410926B2 (ja) * 2015-03-31 2018-10-24 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
US9459536B1 (en) * 2015-06-30 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Negative tone developer composition for extreme ultraviolet lithography

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Publication number Publication date
JP2018081306A (ja) 2018-05-24
TWI714811B (zh) 2021-01-01
TW201821606A (zh) 2018-06-16

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