JP6855127B2 - チップの製造方法 - Google Patents

チップの製造方法 Download PDF

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Publication number
JP6855127B2
JP6855127B2 JP2017111044A JP2017111044A JP6855127B2 JP 6855127 B2 JP6855127 B2 JP 6855127B2 JP 2017111044 A JP2017111044 A JP 2017111044A JP 2017111044 A JP2017111044 A JP 2017111044A JP 6855127 B2 JP6855127 B2 JP 6855127B2
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JP
Japan
Prior art keywords
workpiece
chip
holding
region
modified layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017111044A
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English (en)
Japanese (ja)
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JP2018206965A (ja
JP2018206965A5 (enExample
Inventor
良彰 淀
良彰 淀
金艶 趙
金艶 趙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2017111044A priority Critical patent/JP6855127B2/ja
Priority to TW107115691A priority patent/TWI742276B/zh
Priority to KR1020180062571A priority patent/KR102553014B1/ko
Priority to CN201810554653.2A priority patent/CN108987341B/zh
Publication of JP2018206965A publication Critical patent/JP2018206965A/ja
Publication of JP2018206965A5 publication Critical patent/JP2018206965A5/ja
Application granted granted Critical
Publication of JP6855127B2 publication Critical patent/JP6855127B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical & Material Sciences (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
JP2017111044A 2017-06-05 2017-06-05 チップの製造方法 Active JP6855127B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017111044A JP6855127B2 (ja) 2017-06-05 2017-06-05 チップの製造方法
TW107115691A TWI742276B (zh) 2017-06-05 2018-05-09 晶片的製造方法
KR1020180062571A KR102553014B1 (ko) 2017-06-05 2018-05-31 칩의 제조 방법
CN201810554653.2A CN108987341B (zh) 2017-06-05 2018-06-01 芯片的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017111044A JP6855127B2 (ja) 2017-06-05 2017-06-05 チップの製造方法

Publications (3)

Publication Number Publication Date
JP2018206965A JP2018206965A (ja) 2018-12-27
JP2018206965A5 JP2018206965A5 (enExample) 2020-03-05
JP6855127B2 true JP6855127B2 (ja) 2021-04-07

Family

ID=64540366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017111044A Active JP6855127B2 (ja) 2017-06-05 2017-06-05 チップの製造方法

Country Status (4)

Country Link
JP (1) JP6855127B2 (enExample)
KR (1) KR102553014B1 (enExample)
CN (1) CN108987341B (enExample)
TW (1) TWI742276B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250078630A (ko) * 2019-04-19 2025-06-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
JP7427189B2 (ja) * 2020-01-31 2024-02-05 国立大学法人東海国立大学機構 レーザ加工方法、半導体部材製造方法、及び、レーザ加工装置
JP7405365B2 (ja) * 2020-01-31 2023-12-26 国立大学法人東海国立大学機構 レーザ加工方法、半導体部材製造方法、及び、レーザ加工装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
TWI520269B (zh) * 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
TWI256674B (en) * 2005-10-14 2006-06-11 Advanced Semiconductor Eng Method for dicing a wafer
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP5686551B2 (ja) * 2010-08-31 2015-03-18 株式会社ディスコ ウエーハの加工方法
JP5964580B2 (ja) * 2011-12-26 2016-08-03 株式会社ディスコ ウェーハの加工方法
JP2013152987A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5988601B2 (ja) * 2012-02-13 2016-09-07 株式会社ディスコ 光デバイスウェーハの分割方法
JP2013236001A (ja) * 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014086611A (ja) * 2012-10-25 2014-05-12 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP6178724B2 (ja) * 2013-12-26 2017-08-09 株式会社ディスコ ウェーハの分割方法
JP2016092207A (ja) * 2014-11-05 2016-05-23 株式会社ディスコ フレームユニットの製造方法
JP6456766B2 (ja) * 2015-05-08 2019-01-23 株式会社ディスコ ウエーハの加工方法
JP6576212B2 (ja) * 2015-11-05 2019-09-18 株式会社ディスコ ウエーハの加工方法

Also Published As

Publication number Publication date
TW201903880A (zh) 2019-01-16
TWI742276B (zh) 2021-10-11
KR20180133214A (ko) 2018-12-13
KR102553014B1 (ko) 2023-07-06
JP2018206965A (ja) 2018-12-27
CN108987341A (zh) 2018-12-11
CN108987341B (zh) 2024-03-01

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