KR102553014B1 - 칩의 제조 방법 - Google Patents
칩의 제조 방법 Download PDFInfo
- Publication number
- KR102553014B1 KR102553014B1 KR1020180062571A KR20180062571A KR102553014B1 KR 102553014 B1 KR102553014 B1 KR 102553014B1 KR 1020180062571 A KR1020180062571 A KR 1020180062571A KR 20180062571 A KR20180062571 A KR 20180062571A KR 102553014 B1 KR102553014 B1 KR 102553014B1
- Authority
- KR
- South Korea
- Prior art keywords
- workpiece
- holding
- divided
- dividing
- modified layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims description 9
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 230000003014 reinforcing effect Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 description 27
- 230000002787 reinforcement Effects 0.000 description 12
- 238000005520 cutting process Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000012809 cooling fluid Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical & Material Sciences (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2017-111044 | 2017-06-05 | ||
| JP2017111044A JP6855127B2 (ja) | 2017-06-05 | 2017-06-05 | チップの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180133214A KR20180133214A (ko) | 2018-12-13 |
| KR102553014B1 true KR102553014B1 (ko) | 2023-07-06 |
Family
ID=64540366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020180062571A Active KR102553014B1 (ko) | 2017-06-05 | 2018-05-31 | 칩의 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6855127B2 (enExample) |
| KR (1) | KR102553014B1 (enExample) |
| CN (1) | CN108987341B (enExample) |
| TW (1) | TWI742276B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20250078630A (ko) * | 2019-04-19 | 2025-06-02 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
| JP7427189B2 (ja) * | 2020-01-31 | 2024-02-05 | 国立大学法人東海国立大学機構 | レーザ加工方法、半導体部材製造方法、及び、レーザ加工装置 |
| JP7405365B2 (ja) * | 2020-01-31 | 2023-12-26 | 国立大学法人東海国立大学機構 | レーザ加工方法、半導体部材製造方法、及び、レーザ加工装置 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012054275A (ja) | 2010-08-31 | 2012-03-15 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
| JP2013135026A (ja) | 2011-12-26 | 2013-07-08 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
| JP2013152987A (ja) | 2012-01-24 | 2013-08-08 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
| JP2013165229A (ja) | 2012-02-13 | 2013-08-22 | Disco Abrasive Syst Ltd | 光デバイスウェーハの分割方法 |
| JP2013236001A (ja) * | 2012-05-10 | 2013-11-21 | Disco Abrasive Syst Ltd | 板状物の分割方法 |
| JP2014086611A (ja) | 2012-10-25 | 2014-05-12 | Disco Abrasive Syst Ltd | 板状物の分割方法 |
| JP2014199834A (ja) * | 2013-03-29 | 2014-10-23 | 株式会社ディスコ | 保持手段及び加工方法 |
| JP2014236034A (ja) * | 2013-05-31 | 2014-12-15 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2015126088A (ja) | 2013-12-26 | 2015-07-06 | 株式会社ディスコ | ウェーハの分割方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
| TWI520269B (zh) * | 2002-12-03 | 2016-02-01 | 濱松赫德尼古斯股份有限公司 | Cutting method of semiconductor substrate |
| TWI256674B (en) * | 2005-10-14 | 2006-06-11 | Advanced Semiconductor Eng | Method for dicing a wafer |
| JP5791866B2 (ja) | 2009-03-06 | 2015-10-07 | 株式会社ディスコ | ワーク分割装置 |
| JP2016092207A (ja) * | 2014-11-05 | 2016-05-23 | 株式会社ディスコ | フレームユニットの製造方法 |
| JP6456766B2 (ja) * | 2015-05-08 | 2019-01-23 | 株式会社ディスコ | ウエーハの加工方法 |
| JP6576212B2 (ja) * | 2015-11-05 | 2019-09-18 | 株式会社ディスコ | ウエーハの加工方法 |
-
2017
- 2017-06-05 JP JP2017111044A patent/JP6855127B2/ja active Active
-
2018
- 2018-05-09 TW TW107115691A patent/TWI742276B/zh active
- 2018-05-31 KR KR1020180062571A patent/KR102553014B1/ko active Active
- 2018-06-01 CN CN201810554653.2A patent/CN108987341B/zh active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012054275A (ja) | 2010-08-31 | 2012-03-15 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
| JP2013135026A (ja) | 2011-12-26 | 2013-07-08 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
| JP2013152987A (ja) | 2012-01-24 | 2013-08-08 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
| JP2013165229A (ja) | 2012-02-13 | 2013-08-22 | Disco Abrasive Syst Ltd | 光デバイスウェーハの分割方法 |
| JP2013236001A (ja) * | 2012-05-10 | 2013-11-21 | Disco Abrasive Syst Ltd | 板状物の分割方法 |
| JP2014086611A (ja) | 2012-10-25 | 2014-05-12 | Disco Abrasive Syst Ltd | 板状物の分割方法 |
| JP2014199834A (ja) * | 2013-03-29 | 2014-10-23 | 株式会社ディスコ | 保持手段及び加工方法 |
| JP2014236034A (ja) * | 2013-05-31 | 2014-12-15 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2015126088A (ja) | 2013-12-26 | 2015-07-06 | 株式会社ディスコ | ウェーハの分割方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201903880A (zh) | 2019-01-16 |
| TWI742276B (zh) | 2021-10-11 |
| KR20180133214A (ko) | 2018-12-13 |
| JP2018206965A (ja) | 2018-12-27 |
| JP6855127B2 (ja) | 2021-04-07 |
| CN108987341A (zh) | 2018-12-11 |
| CN108987341B (zh) | 2024-03-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20180531 |
|
| PG1501 | Laying open of application | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20210226 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20180531 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20220930 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20230406 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20230704 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20230704 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration |