TWI742276B - 晶片的製造方法 - Google Patents

晶片的製造方法 Download PDF

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Publication number
TWI742276B
TWI742276B TW107115691A TW107115691A TWI742276B TW I742276 B TWI742276 B TW I742276B TW 107115691 A TW107115691 A TW 107115691A TW 107115691 A TW107115691 A TW 107115691A TW I742276 B TWI742276 B TW I742276B
Authority
TW
Taiwan
Prior art keywords
workpiece
wafer
holding
processed object
laser beam
Prior art date
Application number
TW107115691A
Other languages
English (en)
Chinese (zh)
Other versions
TW201903880A (zh
Inventor
淀良彰
趙金艶
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201903880A publication Critical patent/TW201903880A/zh
Application granted granted Critical
Publication of TWI742276B publication Critical patent/TWI742276B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical & Material Sciences (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
TW107115691A 2017-06-05 2018-05-09 晶片的製造方法 TWI742276B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-111044 2017-06-05
JP2017111044A JP6855127B2 (ja) 2017-06-05 2017-06-05 チップの製造方法

Publications (2)

Publication Number Publication Date
TW201903880A TW201903880A (zh) 2019-01-16
TWI742276B true TWI742276B (zh) 2021-10-11

Family

ID=64540366

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107115691A TWI742276B (zh) 2017-06-05 2018-05-09 晶片的製造方法

Country Status (4)

Country Link
JP (1) JP6855127B2 (enExample)
KR (1) KR102553014B1 (enExample)
CN (1) CN108987341B (enExample)
TW (1) TWI742276B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250078630A (ko) * 2019-04-19 2025-06-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
JP7427189B2 (ja) * 2020-01-31 2024-02-05 国立大学法人東海国立大学機構 レーザ加工方法、半導体部材製造方法、及び、レーザ加工装置
JP7405365B2 (ja) * 2020-01-31 2023-12-26 国立大学法人東海国立大学機構 レーザ加工方法、半導体部材製造方法、及び、レーザ加工装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200715388A (en) * 2005-10-14 2007-04-16 Advanced Semiconductor Eng Method for dicing a wafer
TW201324686A (zh) * 2002-12-03 2013-06-16 濱松赫德尼古斯股份有限公司 半導體基板之切斷方法
JP2013135026A (ja) * 2011-12-26 2013-07-08 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2013152987A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
TW201719729A (zh) * 2015-11-05 2017-06-01 Disco Corp 晶圓的加工方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP5686551B2 (ja) * 2010-08-31 2015-03-18 株式会社ディスコ ウエーハの加工方法
JP5988601B2 (ja) * 2012-02-13 2016-09-07 株式会社ディスコ 光デバイスウェーハの分割方法
JP2013236001A (ja) * 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014086611A (ja) * 2012-10-25 2014-05-12 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP6178724B2 (ja) * 2013-12-26 2017-08-09 株式会社ディスコ ウェーハの分割方法
JP2016092207A (ja) * 2014-11-05 2016-05-23 株式会社ディスコ フレームユニットの製造方法
JP6456766B2 (ja) * 2015-05-08 2019-01-23 株式会社ディスコ ウエーハの加工方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201324686A (zh) * 2002-12-03 2013-06-16 濱松赫德尼古斯股份有限公司 半導體基板之切斷方法
TW200715388A (en) * 2005-10-14 2007-04-16 Advanced Semiconductor Eng Method for dicing a wafer
JP2013135026A (ja) * 2011-12-26 2013-07-08 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2013152987A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
TW201719729A (zh) * 2015-11-05 2017-06-01 Disco Corp 晶圓的加工方法

Also Published As

Publication number Publication date
TW201903880A (zh) 2019-01-16
KR20180133214A (ko) 2018-12-13
KR102553014B1 (ko) 2023-07-06
JP2018206965A (ja) 2018-12-27
JP6855127B2 (ja) 2021-04-07
CN108987341A (zh) 2018-12-11
CN108987341B (zh) 2024-03-01

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