JP6851773B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6851773B2
JP6851773B2 JP2016212797A JP2016212797A JP6851773B2 JP 6851773 B2 JP6851773 B2 JP 6851773B2 JP 2016212797 A JP2016212797 A JP 2016212797A JP 2016212797 A JP2016212797 A JP 2016212797A JP 6851773 B2 JP6851773 B2 JP 6851773B2
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electrode
substrate
semiconductor device
main surface
outer side
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JP2018074022A (ja
JP2018074022A5 (enExample
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長谷川　真
真 長谷川
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Canon Inc
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Canon Inc
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Priority to JP2016212797A priority Critical patent/JP6851773B2/ja
Priority to US15/726,602 priority patent/US10381399B2/en
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Publication of JP2018074022A5 publication Critical patent/JP2018074022A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
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    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
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    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/652—Cross-sectional shapes
    • H10W70/6528—Cross-sectional shapes of the portions that connect to chips, wafers or package parts
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
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    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01223—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
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    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
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    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01257—Changing the shapes of bumps by reflowing
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
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    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W99/00—Subject matter not provided for in other groups of this subclass

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  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2016212797A 2016-10-31 2016-10-31 半導体装置 Active JP6851773B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016212797A JP6851773B2 (ja) 2016-10-31 2016-10-31 半導体装置
US15/726,602 US10381399B2 (en) 2016-10-31 2017-10-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016212797A JP6851773B2 (ja) 2016-10-31 2016-10-31 半導体装置

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JP2018074022A JP2018074022A (ja) 2018-05-10
JP2018074022A5 JP2018074022A5 (enExample) 2019-12-12
JP6851773B2 true JP6851773B2 (ja) 2021-03-31

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JP2016212797A Active JP6851773B2 (ja) 2016-10-31 2016-10-31 半導体装置

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US (1) US10381399B2 (enExample)
JP (1) JP6851773B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017122449A1 (ja) * 2016-01-15 2017-07-20 ソニー株式会社 半導体装置および撮像装置
US12376400B2 (en) * 2018-05-28 2025-07-29 Sony Semiconductor Solutions Corporation Imaging device
TWI870807B (zh) * 2023-03-23 2025-01-21 同欣電子工業股份有限公司 晶片封裝結構

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198463A (ja) 2000-12-26 2002-07-12 Canon Inc チップサイズパッケージおよびその製造方法
JP4271909B2 (ja) 2002-07-29 2009-06-03 富士フイルム株式会社 固体撮像装置およびその製造方法
JP4241160B2 (ja) 2002-04-22 2009-03-18 富士フイルム株式会社 固体撮像装置の製造方法
US7074638B2 (en) 2002-04-22 2006-07-11 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing said solid-state imaging device
JP2004063765A (ja) 2002-07-29 2004-02-26 Fuji Photo Film Co Ltd 固体撮像装置およびその製造方法
JP2004063786A (ja) 2002-07-29 2004-02-26 Fuji Photo Film Co Ltd 固体撮像装置およびその製造方法
JP4248928B2 (ja) 2003-05-13 2009-04-02 ローム株式会社 半導体チップの製造方法、半導体装置の製造方法、半導体チップ、および半導体装置
JP4551638B2 (ja) 2003-08-01 2010-09-29 富士フイルム株式会社 固体撮像装置の製造方法
JP2005056998A (ja) 2003-08-01 2005-03-03 Fuji Photo Film Co Ltd 固体撮像装置およびその製造方法
JP2006030159A (ja) 2004-06-15 2006-02-02 Canon Inc ピエゾ抵抗型半導体装置及びその製造方法
JP2008047723A (ja) * 2006-08-17 2008-02-28 Epson Toyocom Corp 表面実装型電子デバイス、調整用プローブ装置、及び表面実装型電子デバイスの調整方法
KR100769722B1 (ko) 2006-10-10 2007-10-24 삼성전기주식회사 이미지센서의 웨이퍼 레벨 칩 스케일 패키지 및 그제조방법
JP2008130738A (ja) 2006-11-20 2008-06-05 Fujifilm Corp 固体撮像素子
JP5344336B2 (ja) 2008-02-27 2013-11-20 株式会社ザイキューブ 半導体装置
JP5175620B2 (ja) * 2008-05-29 2013-04-03 シャープ株式会社 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器
JP2011146486A (ja) * 2010-01-13 2011-07-28 Panasonic Corp 光学デバイスおよびその製造方法ならびに電子機器
CN103077951B (zh) * 2013-01-09 2016-03-30 苏州晶方半导体科技股份有限公司 Bsi图像传感器的晶圆级封装方法

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US10381399B2 (en) 2019-08-13
US20180130846A1 (en) 2018-05-10

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