JP6850301B2 - オプトエレクトロニクス部品およびオプトエレクトロニクス部品を製造するための方法 - Google Patents
オプトエレクトロニクス部品およびオプトエレクトロニクス部品を製造するための方法 Download PDFInfo
- Publication number
- JP6850301B2 JP6850301B2 JP2018544099A JP2018544099A JP6850301B2 JP 6850301 B2 JP6850301 B2 JP 6850301B2 JP 2018544099 A JP2018544099 A JP 2018544099A JP 2018544099 A JP2018544099 A JP 2018544099A JP 6850301 B2 JP6850301 B2 JP 6850301B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- connecting layer
- semiconductor body
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 39
- 230000005693 optoelectronics Effects 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 286
- 239000004020 conductor Substances 0.000 claims description 118
- 239000000463 material Substances 0.000 claims description 56
- 239000002131 composite material Substances 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 16
- 239000012212 insulator Substances 0.000 claims description 12
- 238000005304 joining Methods 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 340
- 239000000758 substrate Substances 0.000 description 19
- 239000011810 insulating material Substances 0.000 description 17
- 239000012777 electrically insulating material Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05575—Plural external layers
- H01L2224/05576—Plural external layers being mutually engaged together, e.g. through inserts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/05686—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/065—Material
- H01L2224/06505—Bonding areas having different materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
- H01L2224/081—Disposition
- H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/8034—Bonding interfaces of the bonding area
- H01L2224/80357—Bonding interfaces of the bonding area being flush with the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/80895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/80896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
- H01L2224/8101—Cleaning the bump connector, e.g. oxide removal step, desmearing
- H01L2224/81013—Plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/81895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/81896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
- H01L2224/83013—Plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/83895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/83896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
Description
導体/絶縁体、
絶縁体/導体、
絶縁体/絶縁体、および/または、
導体/導体、
が存在し、第1の接続層の材料が斜線の左側に示され、第2の接続層の材料が斜線の右側に示される。
・ ハイブリッド層/ハイブリッド層
・ ハイブリッド層/均一層
・ 均一層/ハイブリッド層
・ 均一層/均一層
で形成され、第1の接続層のタイプが斜線の左側に示され、第2の接続層のタイプが斜線の右側に示される。
キャリアと、第1の接続層および第2の接続層を含む接続層ペアと、をさらに含み、
・ 半導体ボディは、キャリアに配置され、
・ 第1の接続層は、半導体ボディとキャリアとの間に配設されて半導体ボディに接続され、
・ 第2の接続層は、第1の接続層とキャリアとの間に配設され、
・ 第1の接続層および第2の接続層から選択された少なくとも1つの層は、放射透過性および導電性の酸化物を含有し、
・ 第1の接続層および第2の接続層は、少なくとも1つまたは複数の接続領域のうちの領域で互いに直接接続され、したがって、接続層ペアは、キャリアに対する半導体ボディの機械的接続部に包含される。
10a、10b、10c 半導体ボディ
12 活性領域
14 第1の半導体層
16 第2の半導体層
20 基板
30a、30b、30c 接続層ペア
32 第1の接続層
34 第2の接続層
321 第1の境界面
341 第2の境界面
40 複合体要素
50 オプトエレクトロニクスデバイス
60 キャリア
62、64、66、68 端子領域
72 第1のタイプの接続導体
74 第2のタイプの接続導体
76 絶縁材料
78a、78b、78c 接続導体
80、82 導電性サブ領域
92、94、96、98 電子要素
100 第1の複合体
200 第2の複合体
112、114、116、118 接触部
120 終端接触部
I 絶縁性サブ領域
C 導電性サブ領域
Claims (19)
- キャリアと、前記キャリア上に配置され、光学的活性領域を含む1つまたは複数の半導体ボディと、前記1つまたは複数の半導体ボディのそれぞれに対応して設けられ、第1の接続層および第2の接続層を含む1つまたは複数の接続層ペアと、を備えるオプトエレクトロニクスデバイスであって、
前記1つまたは複数の半導体ボディのうちの第1の半導体ボディと前記キャリアとを、および/または、前記複数の半導体ボディのうちの隣り合う半導体ボディどうしを、機械的に接続する機械的接続部を有し、
前記1つまたは複数の接続層ペアのうちの少なくとも1つの接続層ペアにおいて、
前記第1の接続層は、対応する半導体ボディと前記キャリアとの間に配設されて前記対応する半導体ボディに接続されており、
前記第2の接続層は、前記第1の接続層と前記キャリアとの間に配設されており、
前記第1の接続層および前記第2の接続層は、別個の接合層を用いない接続領域で互いに直接接続されており、したがって、前記少なくとも1つの接続層ペアは、前記機械的接続部を形成し、
前記第1の接続層および前記第2の接続層はそれぞれ、複数の導電性サブ領域を含み、
前記複数の導電性サブ領域は、それぞれの層内で互いに電気的に絶縁されており、
前記第1の接続層および前記第2の接続層において、前記複数の導電性サブ領域は、放射透過性および導電性の酸化物を含有しており、
前記それぞれの層における前記複数の導電性サブ領域のうちの少なくとも2つは、前記対応する半導体ボディの、前記光学的活性領域の電気的に異なる側に導電接続されている、
オプトエレクトロニクスデバイス。 - 前記第1の接続層および第2の接続層のすべては、電気的絶縁性の酸化物を含有する、
請求項1に記載のオプトエレクトロニクスデバイス。 - 前記導電性サブ領域は、TCO材料を含有する、またはTCO材料からなる、
請求項1または2に記載のオプトエレクトロニクスデバイス。 - 前記オプトエレクトロニクスデバイスは、前記1つまたは複数の半導体ボディのうちの特定の半導体ボディの中に延びる接続導体を含み、前記接続導体は、前記特定の半導体ボディの中で前記活性領域から、また、前記活性領域の少なくとも1つの側で前記特定の半導体ボディからも、電気的に絶縁される、
請求項1〜3のいずれか一項に記載のオプトエレクトロニクスデバイス。 - 前記少なくとも2つの導電性サブ領域のうちの第1の導電性サブ領域は、前記対応する半導体ボディの前記光学的活性領域に対して前記キャリアに対向している側で、前記対応する半導体ボディに導電接続されており、前記少なくとも2つのサブ領域のうちの第2の導電性サブ領域は、前記対応する半導体ボディの前記光学的活性領域に対して前記キャリアの側とは反対側で、前記対応する半導体ボディに前記接続導体を介して導電接続されている、
請求項4に記載のオプトエレクトロニクスデバイス。 - 前記接続導体は、前記特定の半導体ボディに対応する接続層ペアの前記第1の接続層の導電性サブ領域に導電接続されており、前記導電性サブ領域と前記接続導体との間のコンタクト表面の面積は、前記対応する接続層ペアの前記第1の接続層の前記導電性サブ領域の表面の面積よりも小さい、
請求項4または5に記載のオプトエレクトロニクスデバイス。 - 前記特定の半導体ボディの中で前記活性領域から、また、前記活性領域の少なくとも1つの側で前記特定の半導体ボディからも、電気的に絶縁される、前記接続導体は、前記特定の半導体ボディ全体を貫通している、
請求項4〜6のいずれか一項に記載のオプトエレクトロニクスデバイス。 - 前記第1の接続層および/または前記第2の接続層は、構造化されて1つまたは複数のガス充填済み凹部を含み、当該凹部によりそれぞれの接続層の少なくとも2つの導電性サブ領域が互いに電気的に絶縁されている、
請求項1〜7のいずれか一項に記載のオプトエレクトロニクスデバイス。 - 前記第1の接続層および/または前記第2の接続層は、ハイブリッド層として形成されており、前記それぞれのハイブリッド層は、1つまたは複数の導電性サブ領域、および、1つまたは複数の電気的絶縁性サブ領域を含む、
請求項1〜8のいずれか一項に記載のオプトエレクトロニクスデバイス。 - 前記第1の接続層および/または前記第2の接続層は、その延在部分にわたって材料組成が変わらない、
請求項1〜7のいずれか一項に記載のオプトエレクトロニクスデバイス。 - 前記接続領域において、少なくとも1つの、任意に選択された複数の、または、すべての、以下の隣接する材料ペア、すなわち
絶縁体/導体、
絶縁体/絶縁体、および/または、
導体/導体、
が存在し、前記第1の接続層の材料が斜線の左側に示され、前記第2の接続層の材料が斜線の右側に示される、
請求項1〜10のいずれか一項に記載のオプトエレクトロニクスデバイス。 - 前記第1の接続層の第1の境界面および前記第2の接続層の第2の境界面は、前記接続領域で互いに隣接し、前記第1の境界面および/または前記第2の境界面は、前記接続領域において、あるいは、表面全体にわたって、1nm以下であるRMS粗さを含む、
請求項1〜11のいずれか一項に記載のオプトエレクトロニクスデバイス。 - 前記第1の半導体ボディの接続導体は、前記第1の半導体ボディから電気的に絶縁されて前記第1の半導体ボディ全体を通って延びて、前記第1の半導体ボディと隣り合う第2の半導体ボディに導電接続されており、前記接続導体と前記第2の半導体ボディとの間の前記導電接続の一部分は、前記第1の半導体ボディと前記第2の半導体ボディとの間に配設される前記接続層ペアによって形成されている、
請求項1〜12のいずれか一項に記載のオプトエレクトロニクスデバイス。 - 前記1つまたは複数の半導体ボディをそれぞれ駆動するための1つまたは複数の電子要素は、前記キャリアに一体化されている、
請求項1〜13のいずれか一項に記載のオプトエレクトロニクスデバイス。 - 請求項1に記載のオプトエレクトロニクスデバイスを製造するための方法であって、
a)光学的活性領域を有する半導体積層体を用意するステップと、
b)前記半導体積層体および第1の接続層が第1の複合体を形成するように、前記第1の接続層を前記半導体積層体に被着するステップと、
c)前記第1の複合体とは別体であり且つ半導体積層体および/またはキャリア要素を有する複合体要素を用意するステップと、
d)前記複合体要素および第2の接続層が第2の複合体を形成するように、前記第2の接続層を前記複合体要素に被着するステップと、
e)前記第1および第2の接続層を介して直接接合によって前記第1および第2の複合体を接続するステップと、を含み、
前記第1の接続層および前記第2の接続層はそれぞれ、複数の導電性サブ領域を含み、
前記複数の導電性サブ領域は、それぞれの層内で互いに電気的に絶縁されており、
前記第1の接続層および前記第2の接続層において、前記複数の導電性サブ領域は、放射透過性および導電性の酸化物を含有する、
方法。 - 前記第1の接続層および/または前記第2の接続層は、被着後、ステップe)前に、第1の温度で温度処理を受ける、
請求項15に記載の方法。 - 前記第1の接続層および/または前記第2の接続層は、プラズマプロセスを用いて前記温度処理後のステップe)で直接接合するために準備される、
請求項16に記載の方法。 - 前記第1の接続層および前記第2の接続層は、ステップe)の前記直接接合後に、前記第1の温度よりも低い第2の温度で温度処理を受ける、
請求項17に記載の方法。 - キャリアと、
それぞれ光学的活性領域を含む複数の半導体ボディを積層した積層体と、
いずれも前記キャリアと前記積層体との間に配置され、および/または、いずれも前記積層体において隣り合う半導体ボディ間に配置され、前記複数の半導体ボディおよび前記キャリアとともに重ねて互いに接合された、第1の接続層および第2の接続層と、
を有し、
前記第1の接続層および前記第2の接続層はそれぞれ、複数の導電性サブ領域を含み、
前記複数の導電性サブ領域は、それぞれの層内で互いに電気的に絶縁されており、
前記第1の接続層および前記第2の接続層において、前記複数の導電性サブ領域は、放射透過性および導電性の酸化物を含有しており、
前記それぞれの層における前記複数の導電性サブ領域のうちの少なくとも2つは、同じ半導体ボディの、前記光学的活性領域の電気的に異なる側に導電接続されている、
オプトエレクトロニクスデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016104280.3 | 2016-03-09 | ||
DE102016104280.3A DE102016104280A1 (de) | 2016-03-09 | 2016-03-09 | Bauelement und Verfahren zur Herstellung eines Bauelements |
PCT/EP2017/053015 WO2017153123A1 (de) | 2016-03-09 | 2017-02-10 | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronische bauelements |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019509636A JP2019509636A (ja) | 2019-04-04 |
JP6850301B2 true JP6850301B2 (ja) | 2021-03-31 |
Family
ID=58009843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018544099A Active JP6850301B2 (ja) | 2016-03-09 | 2017-02-10 | オプトエレクトロニクス部品およびオプトエレクトロニクス部品を製造するための方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10686099B2 (ja) |
JP (1) | JP6850301B2 (ja) |
KR (1) | KR102214928B1 (ja) |
CN (1) | CN108780826B (ja) |
DE (1) | DE102016104280A1 (ja) |
TW (1) | TWI642208B (ja) |
WO (1) | WO2017153123A1 (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016113002B4 (de) | 2016-07-14 | 2022-09-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen |
EP3558806B1 (en) | 2016-12-21 | 2021-02-03 | Telefonaktiebolaget LM Ericsson (publ) | Devices and methods for indicating an external factor on the hull of a boat |
DE102017122325A1 (de) * | 2017-09-26 | 2019-03-28 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen |
US10892297B2 (en) | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
US11282981B2 (en) | 2017-11-27 | 2022-03-22 | Seoul Viosys Co., Ltd. | Passivation covered light emitting unit stack |
US11527519B2 (en) * | 2017-11-27 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
US10892296B2 (en) * | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
US10748881B2 (en) | 2017-12-05 | 2020-08-18 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
US10886327B2 (en) | 2017-12-14 | 2021-01-05 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
US11552057B2 (en) | 2017-12-20 | 2023-01-10 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
US11522006B2 (en) | 2017-12-21 | 2022-12-06 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
US11552061B2 (en) | 2017-12-22 | 2023-01-10 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
US11114499B2 (en) | 2018-01-02 | 2021-09-07 | Seoul Viosys Co., Ltd. | Display device having light emitting stacked structure |
US10784240B2 (en) | 2018-01-03 | 2020-09-22 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
DE102018112586A1 (de) * | 2018-05-25 | 2019-11-28 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung einer verbindung zwischen bauteilen und bauelement |
US10862006B2 (en) * | 2018-08-17 | 2020-12-08 | Seoul Viosys Co., Ltd. | Light emitting device |
US11430929B2 (en) * | 2018-09-14 | 2022-08-30 | Seoul Viosys Co., Ltd. | Light emitting device having a stacked structure |
US11621253B2 (en) * | 2018-11-02 | 2023-04-04 | Seoul Viosys Co., Ltd. | Light emitting device |
US11502230B2 (en) | 2018-11-02 | 2022-11-15 | Seoul Viosys Co., Ltd. | Light emitting device |
US11158665B2 (en) | 2018-11-05 | 2021-10-26 | Seoul Viosys Co., Ltd. | Light emitting device |
US11211528B2 (en) * | 2019-03-13 | 2021-12-28 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
DE102019108701A1 (de) * | 2019-04-03 | 2020-10-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Mehrzahl von Bauteilen, Bauteil und Bauteilverbund aus Bauteilen |
US11508778B2 (en) * | 2019-05-21 | 2022-11-22 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
JP2022528297A (ja) * | 2019-05-21 | 2022-06-09 | ソウル バイオシス カンパニー リミテッド | ディスプレイ用発光素子およびそれを有するディスプレイ装置 |
US11538784B2 (en) | 2019-05-29 | 2022-12-27 | Seoul Viosys Co., Ltd. | Light emitting device having cantilever electrode, LED display panel and LED display apparatus having the same |
CN113924662A (zh) | 2019-05-29 | 2022-01-11 | 首尔伟傲世有限公司 | 具有悬臂电极的发光元件、具有其的显示面板及显示装置 |
DE102019119891A1 (de) * | 2019-07-23 | 2021-01-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
US20210043678A1 (en) * | 2019-08-07 | 2021-02-11 | Seoul Viosys Co., Ltd. | Led display panel and led display apparatus having the same |
EP4024479A4 (en) * | 2019-10-28 | 2023-10-11 | Seoul Viosys Co., Ltd | LIGHT-EMITTING DEVICE FOR DISPLAY, AND LED DISPLAY APPARATUS INCLUDING SAME |
US20210175280A1 (en) * | 2019-12-09 | 2021-06-10 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
KR102364498B1 (ko) * | 2019-12-11 | 2022-02-17 | 주식회사 썬다이오드코리아 | 수직으로 적층되고 공통 전극을 가지는 마이크로 디스플레이의 화소 |
US11688840B2 (en) * | 2019-12-28 | 2023-06-27 | Seoul Viosys Co., Ltd. | Light emitting device and led display apparatus having the same |
US11961873B2 (en) | 2020-05-11 | 2024-04-16 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW497277B (en) * | 2000-03-10 | 2002-08-01 | Toshiba Corp | Semiconductor light emitting device and method for manufacturing the same |
US7041529B2 (en) | 2002-10-23 | 2006-05-09 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device and method of fabricating the same |
US7271420B2 (en) * | 2004-07-07 | 2007-09-18 | Cao Group, Inc. | Monolitholic LED chip to emit multiple colors |
TWI253770B (en) * | 2005-07-11 | 2006-04-21 | Univ Nat Central | Light emitting diode and manufacturing method thereof |
KR100750932B1 (ko) * | 2005-07-31 | 2007-08-22 | 삼성전자주식회사 | 기판 분해 방지막을 사용한 단결정 질화물계 반도체 성장및 이를 이용한 고품위 질화물계 발광소자 제작 |
JP4738999B2 (ja) * | 2005-12-06 | 2011-08-03 | 豊田合成株式会社 | 半導体光素子の製造方法 |
TW200802544A (en) | 2006-04-25 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Composite substrate and method for making the same |
TWI349371B (en) * | 2007-02-13 | 2011-09-21 | Epistar Corp | An optoelectronical semiconductor device having a bonding structure |
DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
JP4497185B2 (ja) | 2007-09-18 | 2010-07-07 | カシオ計算機株式会社 | 表示装置の製造方法 |
CN101821866B (zh) * | 2007-10-08 | 2012-05-23 | 3M创新有限公司 | 具有粘接的半导体波长转换器的发光二极管 |
DE102008013900A1 (de) | 2008-03-12 | 2009-09-17 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
US7732803B2 (en) * | 2008-05-01 | 2010-06-08 | Bridgelux, Inc. | Light emitting device having stacked multiple LEDS |
JP5097057B2 (ja) | 2008-08-29 | 2012-12-12 | 株式会社沖データ | 表示装置 |
JP4555880B2 (ja) | 2008-09-04 | 2010-10-06 | 株式会社沖データ | 積層半導体発光装置及び画像形成装置 |
DE102009020127A1 (de) * | 2009-03-25 | 2010-09-30 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
DE102009031147A1 (de) * | 2009-06-30 | 2011-01-05 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
US8163581B1 (en) * | 2010-10-13 | 2012-04-24 | Monolith IC 3D | Semiconductor and optoelectronic devices |
CN102593303A (zh) * | 2011-01-05 | 2012-07-18 | 晶元光电股份有限公司 | 具有栓塞的发光元件 |
DE102011116232B4 (de) * | 2011-10-17 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
SG2014013585A (en) | 2012-07-26 | 2014-06-27 | Ev Group E Thallner Gmbh | Method for bonding of substrates |
JP2014175427A (ja) * | 2013-03-07 | 2014-09-22 | Toshiba Corp | 半導体発光素子及びその製造方法 |
CN104409465B (zh) | 2014-11-20 | 2017-02-22 | 厦门乾照光电股份有限公司 | 一种高发光效率的高压发光二极管制作方法 |
-
2016
- 2016-03-09 DE DE102016104280.3A patent/DE102016104280A1/de active Pending
-
2017
- 2017-02-10 US US16/081,402 patent/US10686099B2/en active Active
- 2017-02-10 KR KR1020187029280A patent/KR102214928B1/ko active IP Right Grant
- 2017-02-10 CN CN201780016398.XA patent/CN108780826B/zh active Active
- 2017-02-10 JP JP2018544099A patent/JP6850301B2/ja active Active
- 2017-02-10 WO PCT/EP2017/053015 patent/WO2017153123A1/de active Application Filing
- 2017-03-07 TW TW106107324A patent/TWI642208B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20180121614A (ko) | 2018-11-07 |
TW201803156A (zh) | 2018-01-16 |
KR102214928B1 (ko) | 2021-02-09 |
TWI642208B (zh) | 2018-11-21 |
CN108780826B (zh) | 2021-07-13 |
CN108780826A (zh) | 2018-11-09 |
WO2017153123A1 (de) | 2017-09-14 |
US20190097088A1 (en) | 2019-03-28 |
JP2019509636A (ja) | 2019-04-04 |
DE102016104280A1 (de) | 2017-09-14 |
US10686099B2 (en) | 2020-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6850301B2 (ja) | オプトエレクトロニクス部品およびオプトエレクトロニクス部品を製造するための方法 | |
US9082932B2 (en) | Optoelectronic semiconductor chip having n-conducting region connected from the p-type side via the single n-type contact element | |
TWI523260B (zh) | 製造複數個光電半導體晶片之方法及光電半導體晶片 | |
FR3033939A1 (fr) | Dispositif optoelectronique a diode electroluminescente | |
JP5922236B2 (ja) | 発光装置およびその製造方法 | |
TW201143141A (en) | Semiconductor light emitting device | |
KR20110030542A (ko) | 광전 소자 제조 방법 및 광전 소자 | |
EP2477244B1 (en) | Method of manufacturing a light-emitting device package on a wafer level | |
CN104396030A (zh) | 制造led或太阳能电池的结构的方法 | |
CN106062976B (zh) | 用于制造半导体器件的方法和半导体器件 | |
TW202002326A (zh) | 用於具有氫擴散障蔽層之三五族發光微像素陣列裝置之裝置及方法 | |
US20140014990A1 (en) | Light-emitting device packages and methods of manufacturing the same | |
CN104701307B (zh) | 平面高压串联led集成芯片及其制造方法 | |
US20150236194A1 (en) | Method of manufacturing microarray type nitride light emitting device | |
TW201419583A (zh) | 發光元件及其製造方法 | |
US11694977B2 (en) | Method for producing a connection between component parts | |
CN104051582A (zh) | 半导体发光元件、发光装置及制造半导体发光元件的方法 | |
CN102522400B (zh) | 一种防静电损伤的垂直发光器件及其制造方法 | |
JP2021527323A (ja) | GaN−オン−シリコン・デバイスの中の寄生容量低減 | |
CN105580145B (zh) | 光电子半导体芯片、半导体器件以及用于制造光电子半导体芯片的方法 | |
CN106716651A (zh) | 光电半导体芯片和用于制造该光电半导体芯片的方法 | |
CN202797052U (zh) | 半导体发光元件 | |
KR20100063650A (ko) | 반도체 발광소자 및 그의 제조방법 | |
KR20130128464A (ko) | 발광 반도체 소자 | |
US8335243B2 (en) | Optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181001 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181001 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181227 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20190719 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20190724 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190731 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190813 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20191112 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200109 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200331 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200617 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200928 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210209 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210305 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6850301 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |