JP6814216B2 - 反射光学素子 - Google Patents

反射光学素子 Download PDF

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Publication number
JP6814216B2
JP6814216B2 JP2018531591A JP2018531591A JP6814216B2 JP 6814216 B2 JP6814216 B2 JP 6814216B2 JP 2018531591 A JP2018531591 A JP 2018531591A JP 2018531591 A JP2018531591 A JP 2018531591A JP 6814216 B2 JP6814216 B2 JP 6814216B2
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Japan
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layer
optical element
reflective
optical
heat
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JP2018531591A
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Japanese (ja)
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JP2019500652A (ja
JP2019500652A5 (enExample
Inventor
フーベル ペーター
フーベル ペーター
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/065—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements provided with cooling means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2018531591A 2015-12-16 2016-11-21 反射光学素子 Active JP6814216B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015225509.3A DE102015225509A1 (de) 2015-12-16 2015-12-16 Reflektives optisches Element
DE102015225509.3 2015-12-16
PCT/EP2016/078343 WO2017102256A1 (de) 2015-12-16 2016-11-21 Reflektives optisches element

Publications (3)

Publication Number Publication Date
JP2019500652A JP2019500652A (ja) 2019-01-10
JP2019500652A5 JP2019500652A5 (enExample) 2020-01-09
JP6814216B2 true JP6814216B2 (ja) 2021-01-13

Family

ID=57389426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018531591A Active JP6814216B2 (ja) 2015-12-16 2016-11-21 反射光学素子

Country Status (4)

Country Link
US (1) US10338476B2 (enExample)
JP (1) JP6814216B2 (enExample)
DE (1) DE102015225509A1 (enExample)
WO (1) WO2017102256A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112713499A (zh) * 2020-12-30 2021-04-27 武汉光谷航天三江激光产业技术研究院有限公司 光学元件散热装置及方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7424729B2 (en) * 2000-04-17 2008-09-09 Lg Electronics Inc. Differentiated PSIP table update interval technology
DE10040998A1 (de) * 2000-08-22 2002-03-14 Zeiss Carl Projektionsbelichtungsanlage
US6806006B2 (en) * 2002-07-15 2004-10-19 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
EP1624467A3 (en) * 2003-10-20 2007-05-30 ASML Netherlands BV Lithographic apparatus and device manufacturing method
DE102004060184A1 (de) * 2004-12-14 2006-07-06 Carl Zeiss Smt Ag EUV-Spiegelanordnung
US7332416B2 (en) * 2005-03-28 2008-02-19 Intel Corporation Methods to manufacture contaminant-gettering materials in the surface of EUV optics
US7736820B2 (en) * 2006-05-05 2010-06-15 Asml Netherlands B.V. Anti-reflection coating for an EUV mask
WO2009152959A1 (en) * 2008-06-17 2009-12-23 Carl Zeiss Smt Ag Projection exposure apparatus for semiconductor lithography comprising a device for the thermal manipulation of an optical element
EP2321703B1 (en) * 2008-08-06 2013-01-16 ASML Netherlands BV Optical element for a lithographic apparatus, lithographic apparatus comprising such optical element and method for making the optical element
DE102009054869B4 (de) * 2009-04-09 2022-02-17 Carl Zeiss Smt Gmbh Spiegel zur Führung eines Strahlungsbündels, Vorrichtungen mit einem derartigen Spiegel sowie Verfahren zur Herstellung mikro- oder nanostrukturierter Bauelemente
DE102009044462A1 (de) * 2009-11-06 2011-01-05 Carl Zeiss Smt Ag Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage
JP2011222958A (ja) * 2010-03-25 2011-11-04 Komatsu Ltd ミラーおよび極端紫外光生成装置
JP5941463B2 (ja) * 2010-07-30 2016-06-29 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖ露光装置
DE102010039930A1 (de) 2010-08-30 2012-03-01 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage
DE102011080052A1 (de) 2011-07-28 2013-01-31 Carl Zeiss Smt Gmbh Spiegel, optisches System mit Spiegel und Verfahren zur Herstellung eines Spiegels
DE102012212898A1 (de) * 2012-07-24 2014-01-30 Carl Zeiss Smt Gmbh Spiegelanordnung für eine EUV-Projektionsbelichtungsanlage, Verfahren zum Betreiben derselben, sowie EUV-Projektionsbelichtungsanlage
US20150219874A1 (en) * 2012-11-29 2015-08-06 Carl Zeiss Smt Gmbh Cooling system for at least one system component of an optical system for euv applications and system component of this type and optical system of this type
DE102013204427A1 (de) * 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Anordnung zur thermischen Aktuierung eines Spiegels, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102013102670A1 (de) 2013-03-15 2014-10-02 Asml Netherlands B.V. Optisches Element und optisches System für die EUV-Lithographie sowie Verfahren zur Behandlung eines solchen optischen Elements
DE102014219755A1 (de) 2013-10-30 2015-04-30 Carl Zeiss Smt Gmbh Reflektives optisches Element
DE102014204171A1 (de) * 2014-03-06 2015-09-24 Carl Zeiss Smt Gmbh Optisches Element und optische Anordnung damit
DE102014206765A1 (de) * 2014-04-08 2015-10-08 Carl Zeiss Smt Gmbh Spiegelanordnung, Projektionsobjektiv und EUV-Lithographieanlage
DE102014216240A1 (de) 2014-08-15 2016-02-18 Carl Zeiss Smt Gmbh Reflektives optisches Element
DE102014222534A1 (de) * 2014-11-05 2015-11-12 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines reflektiven optischen Elements, sowie reflektives optisches Element

Also Published As

Publication number Publication date
US20180307142A1 (en) 2018-10-25
WO2017102256A1 (de) 2017-06-22
US10338476B2 (en) 2019-07-02
DE102015225509A1 (de) 2017-06-22
JP2019500652A (ja) 2019-01-10

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