Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70058—Mask illumination systems
  • G03F7/7015—Details of optical elements
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
  • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
  • G03F1/24—Reflection masks; Preparation thereof
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
  • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
  • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
  • G03F1/84—Inspecting
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70216—Mask projection systems
  • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
  • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
  • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
  • G03F7/70891—Temperature
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
  • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
  • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
• • G—PHYSICS
  • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
  • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
  • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
  • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
  • G21K1/062—Devices having a multilayer structure
• • G—PHYSICS
  • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
  • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
  • G21K2201/00—Arrangements for handling radiation or particles
  • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
  • G21K2201/065—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements provided with cooling means

Definitions

• the invention relates to a reflective optical element, in particular for a microlithographic projection exposure apparatus or for a mask inspection system.
• Microlithography is used to fabricate microstructured devices such as integrated circuits or LCDs.
• the microlithography process is carried out in a so-called projection exposure apparatus which has an illumination device and a projection objective.
• Mask inspection equipment is used to inspect reticles for microlithographic projection exposure equipment.
• refractive optical elements are used as optical components for the imaging process, due to the lack of availability of suitable translucent refractive materials.
• a problem that arises in practice is that these reflective optical elements designed for operation in the EUV experience, in particular as a result of the absorption of the radiation emitted by the EUV light source, a heating and a concomitant thermal expansion or deformation, which in turn impairs the imaging properties of the optical system can result. This is particularly the case when illumination settings with comparatively small illumination poles (for example in dipole or quadrupole illumination settings) are used, in which the element heating or deformation varies greatly across the optical effective area of the reflective optical element.
• a transfer of solutions known for VUV lithography systems (with a working wavelength of, for example, about 200 nm or about 160 nm) for overcoming the above-described problem of element heating on EUV systems is partly difficult, in part, as the number of for an active deformation compensation available optical effective surfaces due to the (to avoid excessive light losses due to the necessary reflections) relatively smaller number of optical elements or mirrors is relatively limited.
• the invention relates to a reflective optical element, in particular for a microlithographic projection exposure apparatus or a mask inspection system, wherein the reflective optical element has an optical active surface, with
• At least one porous Ausgas slaughter which releases at least temporarily in the Ausgas slaughter adsorbed particles upon irradiation of the optical active surface with electromagnetic radiation.
• the invention includes the concept of, in operation, limiting the heating of the reflective optical element in the vicinity of the optical active surface or in the region of the reflective layer system in that the Heat induced by the electromagnetic radiation (ie, during a light pulse) in the reflective optical element is used, in part, to cause particles absorbed in a porous outgassing layer specially provided for this purpose.
• the Heat induced by the electromagnetic radiation (ie, during a light pulse) in the reflective optical element is used, in part, to cause particles absorbed in a porous outgassing layer specially provided for this purpose.
• the adsorbed particles may be, for example, merely incorporated water molecules, the radiation-induced heat then being utilized in accordance with the evaporation of the water.
• Other embodiments may also be embedded noble gases (e.g., argon (Ar)).
• this outgassing layer is arranged on the side of the reflective layer system facing the substrate.
• the reflective optical element has a first porous outgassing layer and a second porous outgassing layer, wherein the second outgassing layer is designed such that upon irradiation of the optical active layer surface with electromagnetic radiation from the first Ausgas Mrs released particles in the second Ausgas scaffold be adsorbed at least temporarily.
• the reflective optical element has at least one heat-radiating layer, which upon irradiation of the optical active surface with electromagnetic radiation increases radiation of heat induced by the electromagnetic radiation in the reflective optical element in comparison with an analog structure without the heat-radiating layer.
• a reflective optical element according to the invention in particular for a microlithographic projection exposure apparatus or for a mask inspection system, wherein the reflective optical element has an optical active surface, comprises: a substrate; a reflective layer system; and
• At least one heat-radiating layer which upon irradiation of the optical active surface with electromagnetic radiation, increases radiation of heat induced by the electromagnetic radiation in the reflective optical element in comparison with an analogous structure without the heat-radiating layer.
• the invention is based in particular on the concept of at least reducing an undesired thermally induced deformation of a reflective optical element as a result of the electromagnetic radiation impinging during operation in that the most effective possible removal of
• Infrared (IR) radiation is provided via a heat radiation layer.
• the invention makes use in particular of the fact that, for example, in an EUV mirror, the substrate or the substrate materials typically used for IR radiation are at least partially transparent, with the result that the heat removal according to the invention via the heat radiation layer through the substrate can be done through.
• the invention particularly takes into account the fact that thermally induced deformations on the side of the substrate on the one hand (because of the order of magnitude greater thickness compared to the reflective layer system) are particularly problematic with respect to the wave front effects occurring in the reflective optical element and, on the other hand also by the selection of special substrate materials (such as Zerodur ® or ULE ® ) are usually not completely avoidable in operation.
• zero crossing temperature in which the thermal expansion coefficient of such substrate materials in its temperature dependence has a zero crossing
• the heat radiation layer is arranged on the side of the reflective layer system facing the substrate.
• This embodiment has the advantage that when designing the heat-radiating layer, its optimization with regard to the IR radiation - in particular with respect to material and thickness of the heat-radiating layer - regardless of the emission or emission properties of the radiating layer for the on the reflective optical Element incident electromagnetic useful radiation (eg EUV radiation in the case of an EUV mirror) can take place.
• the emission in the case of an arrangement of the heat-radiating layer on the side of the reflective-layer system facing the substrate, the emission (and thus also the
• the heat radiation layer is arranged on the side of the reflective layer system facing the optical active surface.
• the heat-radiating layer is preferably designed in such a way that the absorption of the operational effect on the reflective optical element occurs.
• useful electromagnetic radiation eg EUV radiation in the case of an EUV mirror
• the reflective optical element according to the invention further comprises a heat insulating layer, which is arranged between the substrate and the reflective layer system.
• a heat insulating layer which is arranged between the substrate and the reflective layer system.
• This refinement is based on the further consideration that heat input into the reflection layer system is less problematic with regard to the wavefront effect occurring at the reflective optical element than heat input into the substrate (where a thermally induced relative expansion due to the relative to the reflection layer system several orders of magnitude higher absolute thickness of the substrate substantially grave- which affects the wavefront effect).
• the reflective optical element further comprises at least one Peltier element, which is arranged between the substrate and the reflective layer system.
• This embodiment is based on the further concept, by using a Peltier element, which can be acted upon by electric current, between the substrate and the reflective layer system in operation as required - e.g. in the case of a threatening temperature increase of the substrate - to achieve an (in particular also controllable) active cooling of the substrate, in which case corresponding to
• the invention further relates to a reflective optical element, in particular for a microlithographic projection exposure apparatus or a mask inspection system, wherein the reflective optical element has an optical active surface, with
• Peltier element which is arranged between the substrate and the reflective layer system.
• the reflective optical element according to the invention further comprises a heat buffer layer, which is arranged between the substrate and the reflective layer system.
• the heat introduced during the impingement of light pulses into the reflective optical element is passed on comparatively quickly to the heat buffer layer 890 by the reflection layer system, so that a too high temperature increase on the side of the reflection layer system is avoided and if necessary, temperature-sensitive layers or layers. Layer systems can be protected.
• the heat from the heat buffer layer can be passed to the substrate.
• the reflective optical element is designed for a working wavelength of less than 30 nm, in particular less than 15 nm.
• the invention is not limited thereto, so that in other applications the invention can also be advantageously implemented in an optical system with a working wavelength in the VUV range (eg of less than 200 nm or less than 160 nm).
• the reflective optical element according to the invention may be a mirror, in particular a mirror for a microlithographic projection exposure apparatus or a mirror for a mask inspection system.
• the reflective optical element according to the invention can also be a reticle for a microlithographic projection exposure apparatus.
• the invention further relates to an optical system of a microlithographic projection exposure apparatus, in particular an illumination device or a projection objective, an optical system of a mask inspection system, as well as a microlithographic projection exposure apparatus and a mask inspection system with at least one reflective optical element having the features described above.
• Figure 1 is a schematic illustration for explaining the construction of a reflective optical element according to a first embodiment of the invention
• Figure 2-5 are schematic representations for explaining the structure of a reflective optical element according to further embodiments of the invention.
• Figure 6 is a diagram for explaining the operation of a reflective optical element according to another embodiment of the invention.
• FIG. 7-8 are schematic representations for explaining the structure of a reflective optical element according to further embodiments of the invention.
• FIG. 9 shows a schematic illustration for explaining the possible structure of a microlithographic projection exposure apparatus designed for operation in the EUV.
• Fig. 1 shows a schematic representation for explaining the structure of a reflective optical element according to the invention in a first embodiment of the invention.
• the reflective optical element 100 comprises a substrate 105 made of any suitable (mirror) substrate material.
• suitable substrate materials include titanium dioxide (TiO2) doped quartz glass, and only by way of example (and without the invention being limited thereto) under the trade designations ULE ® (manufactured by Corning Inc.) or Zerodur ® (manufactured by Schott AG) distributed materials used are.
• the reflective optical element 100 has, in a manner known per se, a reflection layer system 110, which in the illustrated embodiment comprises, by way of example only, a molybdenum-silicon (Mo-Si) layer stack.
• a merely exemplary suitable The structure comprises about 50 layers or layer packages of a layer system of molybdenum (Mo) layers with a layer thickness of 2.7 nm each and silicon (Si) layers with a layer thickness of 3.3 nm each.
• the reflective optical element 100 may in particular be a reflective optical element or a mirror of an optical system, in particular the projection objective or the illumination device of a microlithographic projection exposure apparatus or of the inspection objective of a mask inspection system. Furthermore, the optical element or the optical system can be designed in particular for operation in the EUV.
• the action of an optical effective surface 100a of the reflective optical element 100 with electromagnetic EUV radiation (indicated by an arrow in FIG. 1) during operation of the optical system results in a volumetric expansion taking place both in the reflective layer system 110 and in the substrate 105 Depending on the intensity distribution of the incident electromagnetic radiation (in particular, in the case of a reflective optical element near the pupil, depending on the set illumination setting), this volume expansion can extend inhomogeneously over the optical effective surface 100a.
• the reflective opti see element 100 a heat-radiating layer 120 which, according to FIG. 1, is located on the side of the reflection-layer system 110 facing away from the optical active surface 100a.
• This heat radiation layer 120 is characterized by a comparatively high emissivity for infrared (IR) radiation, so that heat removal takes place via the heat radiation layer 120 through the substrate 105.
• FIG. 2 shows a further embodiment, wherein components which are analogous or substantially functionally identical to those of FIG. 1 are designated by reference numerals increased by "100.” The embodiment of FIG. 2 differs from that of FIG.
• the heat radiating layer 220 in this embodiment is preferably designed such that it has the highest possible emissivity for the IR radiation to be dissipated, but on the other hand for the Reflective optical element 200 incident electromagnetic useful radiation or EUV radiation only a low emissivity (since this is synonymous with a low absorptive capacity) is present.
• Suitable materials for the heat-radiating layers 220 and 120 are e.g. Niobium oxide (NbO), silicon nitride (SiN), zirconium oxide (ZrO) or amorphous carbon (C).
• the heat-radiating layer 220 or 120 may also include a
• Doping eg, a silicon (Si) or molybdenum (Mo) layer
• one or more of the aforementioned materials eg, a doping with 10% carbon atoms
• a comparably negligible influencing of the emission properties of the reflection layer system for the EUV radiation forming the useful light can be achieved in a desired manner with a significant increase in the emissivity for IR radiation.
• typical thicknesses of the heat radiation layer 220 or 120 may be in the range from 5 nm to 100 nm, for example, the placement of the heat radiation layer 120 on the side of the reflection layer system 110 facing the substrate 105 being comparatively greater in thickness and also in FIG greater flexibility in terms of material selection (since no consideration must be given to the in this case irrelevant radiation or emission properties for EUV radiation).
• FIG. 3 shows a further embodiment of a reflective optical element 300 according to the invention, in which analogous or essentially functionally identical components with reference numbers increased by "100" are designated.
• FIG. 3 differs from that of FIG. 2 in that, according to FIG. 3, an additional heat insulation layer 330 is arranged between the reflection layer system 310 and the substrate 305. In this way, a longer retention of the radiation-induced heat in the reflective layer system 310 is achieved, with the result that a greater period of time is available for the heat removal by the IR radiation of the heat-radiating layer 320.
• a suitable material for the thermal insulation layer 330 is e.g. amorphous quartz glass (S1O2), the thickness of which with respect to the placement on the side facing away from the optical active surface 300a side of the reflective layer system 310 is relatively uncritical and may be only for example in the range of a few 10 nm or a few 100 nm.
• S1O2 amorphous quartz glass
• FIG. 4 shows a further embodiment of a reflective optical element 400 according to the invention, again referring to FIG. 3 analogously or substantially functionally identical components with reference numerals increased by "100".
• the reflective optical element 400 has a porous outgassing layer 440 which, in the exemplary embodiment, is arranged between the reflective layer system 410 and the substrate 405.
• the thickness of the porous Ausgas slaughter 440 can only be an example in the range of ⁇ ⁇ to ⁇ ⁇ .
• the outgassing layer 440 serves to temporarily store particles or molecules (eg water or a noble gas such as argon (Ar)).
• the reflective optical element 400 in the exemplary embodiment furthermore has defects 460, which allow the released or desorbed particles to escape.
• defects 460 may be provided in any suitable manner, eg in the form of carbon nanotubes, by a suitable etching process, etc.
• FIG. 5 shows a further embodiment of a reflective optical element 500 according to the invention, components which are analogous or substantially functionally identical to those in FIG. 4 and have reference numerals increased by "100".
• the embodiment of FIG. 5 differs from that of FIG. 4 in that, in addition to the outgassing layer 550, a further outgassing layer 570 is provided on its side facing the substrate 505.
• the particles expelled from the outgassing layer 550 as described above can be temporarily stored, so that in this embodiment, if necessary, the defects 460 present in the reflective optical element 400 of FIG. 4 can be dispensed with.
• an active cooling can take place in each case between successive light pulses in order to correspondingly remove the heat arising with the release of absorption energy.
• FIG. 7 shows a corresponding further embodiment of a reflective optical element 700 according to the invention, in which components which are analogous or substantially functionally identical to those in Fig. 4 are designated by reference numerals increased by "100.”
• a Peltier element 780 is arranged, which is constructed from Peltier layers 781, 782 and can be acted upon by electrodes (not shown) with electric current.
• a cooling of the substrate 705 can be achieved at the expense of heating the reflective layer system 710, again utilizing the already explained fact that, depending on the specific structure of the reflective optical element, a heat input into the reflective layer system in comparison to a heat input in the substrate is relatively unproblematic.
• a Peltier element 780 can in particular also advantageously be combined with the presence of a heat radiation layer 220 or 320 eg according to FIG. 2 or FIG. 3, since in this way the Peltier element 780 additionally introduced into the reflection layer system 210 or 310 Heat can be removed effectively.
• 8 shows a further embodiment of a reflective optical element 800 according to the invention, wherein components which are analogous or substantially functionally identical to those in Fig. 7 are designated by reference numerals increased by "100.” Referring to Fig.
• the reflective optical element 800 has a heat buffer layer 890
• the heat introduced into the reflective optical element 800 during the impact of light pulses can be transmitted from the reflection layer system 810 to the heat buffer layer 890 comparatively rapidly, which can be arranged between reflection layer system 810 and substrate 805 and has a comparatively high heat capacity is so that a pronounced increase in temperature on the part of the reflective layer system 810 can be avoided (and again, for example, analogous to about 4 to 6, temperature-sensitive layers or layer systems can be protected.)
• this Ausgestal tion can be taken into account that typical substrate materials usually have a comparatively low thermal conductivity, so that a resulting heat accumulation within the reflective layer system in the case of temperature-sensitive layers can lead to damage to the layer structure.
• the heat may be transferred from the heat buffer layer 890 to the substrate 805.
• the heat buffer layer 890 may be e.g. one
• Mirror with a reflective layer system in the form of a multi-layer system or layer stack eg of molybdenum (Mo) - and silicon (Si) layers
• the invention is not limited thereto.
• a lighting device in a projection exposure apparatus 900 designed for EUV has a field facet mirror 903 and a pupil facet mirror 904.
• the light of a light source unit comprising a plasma light source 901 and a collector mirror 902 is directed.
• a first telescope mirror 905 and a second telescope mirror 906 are arranged.
• a deflection mirror 907 is arranged in the light path, which deflects the radiation impinging on it onto an object field in the object plane of a projection objective comprising six mirrors 951-956.
• a reflective structure-carrying mask 921 is arranged on a mask table 920, which is imaged with the aid of the projection lens into an image plane in which a photosensitive layer (photoresist) coated substrate 961 is located on a wafer table 960.
• mirrors 951-956 of the projection lens in particular the mirrors 951 and 952 arranged in relation to the optical beam path in the initial region of the projection lens can be configured in the manner according to the invention, since the effect achieved according to the invention results from the effects on them
• Mirrors 951, 952 due to the still comparatively small accumulated reflection losses and thus the relatively high light intensities is then particularly pronounced.
• the invention is not limited to the application to these mirrors 951, 952, so that in principle also other mirrors can be designed in the manner according to the invention.

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• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Health & Medical Sciences (AREA)
• Environmental & Geological Engineering (AREA)
• Public Health (AREA)
• Epidemiology (AREA)
• General Engineering & Computer Science (AREA)
• High Energy & Nuclear Physics (AREA)
• Spectroscopy & Molecular Physics (AREA)
• Atmospheric Sciences (AREA)
• Toxicology (AREA)
• Life Sciences & Earth Sciences (AREA)
• Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
• Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
• Optical Elements Other Than Lenses (AREA)

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• 2015
  • 2015-12-16 DE DE102015225509.3A patent/DE102015225509A1/de not_active Ceased
• 2016
  • 2016-11-21 JP JP2018531591A patent/JP6814216B2/ja active Active
  • 2016-11-21 WO PCT/EP2016/078343 patent/WO2017102256A1/de not_active Ceased
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  • 2018-06-18 US US16/011,019 patent/US10338476B2/en active Active

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