JP6812087B2 - 半導体デバイスおよび製造方法 - Google Patents
半導体デバイスおよび製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 98
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000002019 doping agent Substances 0.000 claims description 44
- 238000002347 injection Methods 0.000 claims description 36
- 239000007924 injection Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 35
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 25
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 25
- 230000000903 blocking effect Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 238000002513 implantation Methods 0.000 claims description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000007943 implant Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 63
- 238000001802 infusion Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Description
120 半導体層
121 第1の領域
122 第2の領域
123 ソース領域
124 接合終端拡張(JTE)
125 主阻止接合
126 ソース電極
127 ドレイン電極
128 ゲート電極
129 絶縁層
130 注入マスク
131 窓領域
134 窓領域
135 領域
136 終端部分
140 注入ドーズ量
141 ベース領域
Claims (10)
- 金属酸化膜ゲートトランジスタを製造する方法であって、
炭化ケイ素を含む半導体層を設けるステップにおいて、前記半導体層が、n型のドーパントでドープされた第1の領域を備えるステップと、
単一の注入マスクおよび実質的に同様の注入ドーズ量を使用して、5keVを上回り、かつ700keVを下回る範囲にある1つまたは複数の注入エネルギーで、前記半導体層にp型のドーパントをイオン注入装置により注入し、前記半導体層中にチャネル領域を含むpウェル領域および前記金属酸化膜ゲートトランジスタの接合終端拡張(JTE)を同時に形成する1つまたは複数の注入処理サブステップを含むステップと、
前記pウェル領域と前記JTEを形成した後に、前記pウェル領域と前記JTEがp+領域を介して接続されるように前記p+領域を形成するステップと、
を含み、
注入されたドーズ量が約2×1013cm−2〜約5×1013cm−2の範囲にあり、
単一の注入マスク及び実質的に同様の注入ドーズ量を使用してウェル領域およびJTEを同時に形成することにより、前記pウェル領域のドーパント濃度は、前記JTEのドーパント濃度と実質的に同じであり、
前記単一の注入マスクが、前記半導体層の主阻止接合から前記JTEへの横方向に増大する距離の関数となる、変化する開口窓の密度を有している、方法。 - 前記単一の注入マスクが前記半導体層中に前記pウェル領域および前記JTEを画成する複数の窓領域を備え、前記窓領域が前記半導体層中に主阻止接合を画成する領域をさらに含み、前記窓領域の開口窓の密度が前記主阻止接合を画成する前記領域から横方向に遠ざかる方向に減少する、請求項1記載の方法。
- 前記主阻止接合を画成する前記領域での開口窓の密度が80パーセントより小さい、請求項2記載の方法。
- 前記窓領域の開口窓の密度が横方向に変化し、それにより実効的な注入されたドーズ量が、前記主阻止接合での約80パーセントから前記JTEの終端部分での注入されたドーズ量全体の約10パーセントの範囲で変化する、請求項2記載の方法。
- 前記窓領域の開口窓の密度が横方向に変化し、それにより実効的な注入されたドーズ量が、前記主阻止接合での約70パーセントから前記JTEの終端部分での注入されたドーズ量全体の約10パーセントの範囲で変化する、請求項2記載の方法。
- 前記半導体層にp型のドーパントを注入するステップが、20keVを上回り、かつ400keVを下回る範囲にある1つまたは複数の注入エネルギーで行われる、請求項1乃至5のいずれかに記載の方法。
- 前記単一の注入マスクを除去するステップと、
前記半導体層をドープしてn型を有するソース領域を形成するステップと、
前記ソース領域に接するソース電極を形成するステップと、
前記半導体層上に絶縁層を配置するステップと、
前記絶縁層上にゲート電極を形成するステップと、
前記半導体層が配置された表面の反対の位置にある基板の表面にドレイン電極を配置するステップと、
を含む、請求項1乃至6のいずれかに記載の方法。 - 前記JTEが互いに分離された複数の離散的な領域を備え、前記JTEにおける前記離散的な領域が、前記JTEの実効的なドーピングプロファイルが前記主阻止接合のエッジから遠ざかる方向に減少するように、前記p型のドーパントでドープされる、請求項1乃至7のいずれかに記載の方法。
- 前記金属酸化膜ゲートトランジスタが金属酸化膜半導体電界効果トランジスタ(MOSFET)である、請求項1乃至8のいずれかに記載の方法。
- 前記金属酸化膜ゲートトランジスタが絶縁ゲートバイポーラトランジスタ(IGBT)である、請求項1乃至8のいずれかに記載の方法。
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US13/933,366 US10347489B2 (en) | 2013-07-02 | 2013-07-02 | Semiconductor devices and methods of manufacture |
US13/933,366 | 2013-07-02 |
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JP2015015468A JP2015015468A (ja) | 2015-01-22 |
JP6812087B2 true JP6812087B2 (ja) | 2021-01-13 |
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US (1) | US10347489B2 (ja) |
JP (1) | JP6812087B2 (ja) |
CN (1) | CN104282537B (ja) |
BR (1) | BR102014016375A2 (ja) |
CA (1) | CA2855304C (ja) |
FR (1) | FR3008226B1 (ja) |
GB (1) | GB2517285B (ja) |
IN (1) | IN2014CH03234A (ja) |
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US10431654B2 (en) | 2015-06-25 | 2019-10-01 | International Business Machines Corporation | Extrinsic base doping for bipolar junction transistors |
JP6809330B2 (ja) * | 2017-03-28 | 2021-01-06 | 豊田合成株式会社 | 半導体装置の製造方法 |
DE102018103550B4 (de) * | 2018-02-16 | 2021-08-12 | Infineon Technologies Ag | Halbleitervorrichtung mit einem halbleiterkörper aus siliziumcarbid |
CN111584623A (zh) * | 2020-06-02 | 2020-08-25 | 吉林华微电子股份有限公司 | 一种双极结型晶体管器件及其制造方法、电子产品 |
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GB201411664D0 (en) | 2014-08-13 |
US10347489B2 (en) | 2019-07-09 |
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FR3008226A1 (fr) | 2015-01-09 |
CA2855304A1 (en) | 2015-01-02 |
GB2517285B (en) | 2017-03-29 |
GB2517285A (en) | 2015-02-18 |
CN104282537A (zh) | 2015-01-14 |
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CN104282537B (zh) | 2020-10-09 |
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