JP6807226B2 - 基材上に平坦化膜又はマイクロレンズを形成するために用いられるエネルギー感受性組成物、硬化体の製造方法、硬化体、マイクロレンズの製造方法、及びcmosイメージセンサ - Google Patents
基材上に平坦化膜又はマイクロレンズを形成するために用いられるエネルギー感受性組成物、硬化体の製造方法、硬化体、マイクロレンズの製造方法、及びcmosイメージセンサ Download PDFInfo
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- JP6807226B2 JP6807226B2 JP2016239761A JP2016239761A JP6807226B2 JP 6807226 B2 JP6807226 B2 JP 6807226B2 JP 2016239761 A JP2016239761 A JP 2016239761A JP 2016239761 A JP2016239761 A JP 2016239761A JP 6807226 B2 JP6807226 B2 JP 6807226B2
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Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Paints Or Removers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (3)
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JP2016239761A JP6807226B2 (ja) | 2016-12-09 | 2016-12-09 | 基材上に平坦化膜又はマイクロレンズを形成するために用いられるエネルギー感受性組成物、硬化体の製造方法、硬化体、マイクロレンズの製造方法、及びcmosイメージセンサ |
TW106134141A TWI726159B (zh) | 2016-12-09 | 2017-10-03 | 基材上形成平坦化膜或微透鏡用之能量感受性組成物、硬化體之製造方法、硬化體、微透鏡之製造方法及cmos(互補式金屬氧化物半導體)影像感測器 |
KR1020170152911A KR102396504B1 (ko) | 2016-12-09 | 2017-11-16 | 기재 상에 평탄화막 또는 마이크로 렌즈를 형성하기 위해 사용되는 에너지 감수성 조성물, 경화체의 제조 방법, 경화체, 마이크로 렌즈의 제조 방법, 및 cmos 이미지 센서 |
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JP2016239761A JP6807226B2 (ja) | 2016-12-09 | 2016-12-09 | 基材上に平坦化膜又はマイクロレンズを形成するために用いられるエネルギー感受性組成物、硬化体の製造方法、硬化体、マイクロレンズの製造方法、及びcmosイメージセンサ |
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JP2018097084A JP2018097084A (ja) | 2018-06-21 |
JP6807226B2 true JP6807226B2 (ja) | 2021-01-06 |
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KR (1) | KR102396504B1 (ko) |
TW (1) | TWI726159B (ko) |
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JP7373470B2 (ja) | 2019-09-19 | 2023-11-02 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法 |
JP7280560B2 (ja) * | 2019-11-15 | 2023-05-24 | 日産化学株式会社 | 現像液及びリンス液を用いた樹脂製レンズの製造方法、並びにそのリンス液 |
JP7451270B2 (ja) | 2020-04-09 | 2024-03-18 | Jsr株式会社 | 感放射線性組成物の処理方法 |
CN117677901A (zh) * | 2021-07-28 | 2024-03-08 | 日产化学株式会社 | 正型感光性树脂组合物 |
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JP4644857B2 (ja) * | 2005-07-22 | 2011-03-09 | 昭和電工株式会社 | 感光性樹脂組成物 |
JP4677871B2 (ja) * | 2005-10-03 | 2011-04-27 | Jsr株式会社 | 感放射線性樹脂組成物ならびに層間絶縁膜およびマイクロレンズの形成 |
JP4710693B2 (ja) * | 2006-04-03 | 2011-06-29 | 凸版印刷株式会社 | カラー撮像素子及びカラー撮像素子製造方法 |
JP2009059959A (ja) * | 2007-08-31 | 2009-03-19 | Tokyo Ohka Kogyo Co Ltd | 固体撮像装置のマイクロレンズ形成方法 |
JP2010117439A (ja) * | 2008-11-11 | 2010-05-27 | Jsr Corp | ポジ型感放射線性組成物、硬化パターン形成方法及び硬化パターン |
US8575248B2 (en) * | 2010-08-06 | 2013-11-05 | Promerus, Llc | Polymer composition for microelectronic assembly |
CN103180784B (zh) * | 2010-09-02 | 2016-01-20 | 东丽株式会社 | 感光性组合物、由其形成的固化膜及具有固化膜的元件 |
KR101852528B1 (ko) * | 2011-07-07 | 2018-04-27 | 닛산 가가쿠 고교 가부시키 가이샤 | 수지 조성물 |
JP2013117662A (ja) * | 2011-12-05 | 2013-06-13 | Toppan Printing Co Ltd | マイクロレンズの製造方法およびマイクロレンズ製造用フォトマスク |
JP5780246B2 (ja) * | 2013-01-16 | 2015-09-16 | 信越化学工業株式会社 | パターン形成方法 |
KR102122294B1 (ko) * | 2014-02-13 | 2020-06-12 | 닛산 가가쿠 가부시키가이샤 | 수지 조성물 |
WO2016031580A1 (ja) * | 2014-08-27 | 2016-03-03 | 東京応化工業株式会社 | 層間絶縁膜形成用感光性樹脂組成物、層間絶縁膜及び層間絶縁膜の形成方法 |
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KR102396504B1 (ko) | 2022-05-10 |
JP2018097084A (ja) | 2018-06-21 |
TWI726159B (zh) | 2021-05-01 |
KR20180066829A (ko) | 2018-06-19 |
TW201835200A (zh) | 2018-10-01 |
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