JP6803460B2 - ５族金属化合物、その製造方法、それを含む膜蒸着用前駆体組成物、及びそれを用いる膜の蒸着方法 - Google Patents

５族金属化合物、その製造方法、それを含む膜蒸着用前駆体組成物、及びそれを用いる膜の蒸着方法 Download PDF

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JP6803460B2
JP6803460B2 JP2019511918A JP2019511918A JP6803460B2 JP 6803460 B2 JP6803460 B2 JP 6803460B2 JP 2019511918 A JP2019511918 A JP 2019511918A JP 2019511918 A JP2019511918 A JP 2019511918A JP 6803460 B2 JP6803460 B2 JP 6803460B2
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pentyl
containing film
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ソク ハン，ウォン
ソク ハン，ウォン
パク，ミョン‐ホ
キム，デ‐ヨン
ファン チェ，ジュン
ファン チェ，ジュン
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ユーピー ケミカル カンパニー リミテッド
ユーピー ケミカル カンパニー リミテッド
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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JP2019511918A 2016-09-08 2017-08-23 ５族金属化合物、その製造方法、それを含む膜蒸着用前駆体組成物、及びそれを用いる膜の蒸着方法 Active JP6803460B2 (ja)

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KR10-2016-0115708 2016-09-08
KR20160115708 2016-09-08
PCT/KR2017/009188 WO2018048124A1 (ko) 2016-09-08 2017-08-23 5족 금속 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법

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KR102015276B1 (ko) 2018-02-08 2019-08-28 주식회사 메카로 유기금속화합물 및 이를 이용한 박막
EP3976852A4 (en) * 2019-06-05 2023-11-29 Versum Materials US, LLC NEW PRECURSORS OF GROUPS V AND VI TRANSITION METALS FOR THIN FILM DEPOSITION
KR102858491B1 (ko) 2019-10-08 2025-09-10 에스케이트리켐 주식회사 5족 금속 함유 박막 형성용 전구체 및 이를 이용한 5족 금속 함유 박막 형성 방법 및 상기 5족 금속 함유 박막을 포함하는 반도체 소자.
KR20220053482A (ko) * 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
KR102621779B1 (ko) * 2021-08-31 2024-01-08 주식회사 이지티엠 박막 증착을 위한 니오비움 전구체 화합물 및 이를 이용한 니오비움 함유 박막의 형성 방법
KR102682682B1 (ko) * 2021-10-05 2024-07-09 주식회사 한솔케미칼 5족 금속 화합물, 이를 포함하는 증착용 전구체 조성물 및 이를 이용하여 박막을 형성하는 방법

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WO2018048124A1 (ko) 2018-03-15
JP2019534245A (ja) 2019-11-28
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US20190202847A1 (en) 2019-07-04
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