JP6793025B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6793025B2 JP6793025B2 JP2016237387A JP2016237387A JP6793025B2 JP 6793025 B2 JP6793025 B2 JP 6793025B2 JP 2016237387 A JP2016237387 A JP 2016237387A JP 2016237387 A JP2016237387 A JP 2016237387A JP 6793025 B2 JP6793025 B2 JP 6793025B2
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- 239000004065 semiconductor Substances 0.000 title claims description 53
- 239000011347 resin Substances 0.000 claims description 69
- 229920005989 resin Polymers 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 8
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000009719 polyimide resin Substances 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 description 16
- 238000013508 migration Methods 0.000 description 15
- 230000005012 migration Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000003566 sealing material Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000005749 Copper compound Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009791 electrochemical migration reaction Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- -1 halogen ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Claims (10)
- 第1の電源配線から供給される電源電位と第2の電源配線から供給される基準電位とに接続され、入力信号に応じて出力端子に出力信号を出力する集積回路を有する半導体装置において、
前記集積回路が形成される半導体基板と、
前記半導体基板の上に形成される無機絶縁膜と、
前記無機絶縁膜の上に形成される有機絶縁膜と、
前記無機絶縁膜の上に形成される第1の配線と、
前記有機絶縁膜の上に形成される第2の配線と、
前記無機絶縁膜の上に、前記有機絶縁膜、前記第1の配線及び前記第2の配線を覆うように設けられた樹脂層とを有し、
前記第1の配線及び前記第2の配線はそれぞれ前記第1の電源配線、前記第2の電源配線、または前記出力端子のいずれか一つに接続され、
前記第1の配線と前記第2の配線とが互いに隣接して配置される場合、前記第1の配線と前記第2の配線との配線間隔は第1の配線間隔とされ、前記第1の配線に与えられる電位と前記第2の配線に与えられる電位とが異なるように、互いに異なる接続先に接続され、
前記第1の配線間隔は、同じ電位が与えられる前記第1の配線が互いに隣接されて配置される場合の配線間隔に等しい半導体装置。 - 請求項1において、
前記有機絶縁膜は樹脂膜である半導体装置。 - 請求項2において、
互いに隣接して配置された前記第1の配線と前記第2の配線との間には、
前記樹脂膜と前記樹脂層との間に形成され前記半導体基板と平行な界面と、
前記無機絶縁膜と前記樹脂層との界面と、
前記樹脂膜と前記樹脂層との間に形成され前記半導体基板と非平行な界面とを有する半導体装置。 - 請求項3において、
前記樹脂膜と前記樹脂層との間に形成され前記半導体基板と平行な界面の幅は、前記無機絶縁膜と前記樹脂層との界面の幅以下である半導体装置。 - 請求項2において、
複数のボンディングパッドを有し、
前記複数のボンディングパッドのそれぞれは、ボンディングパッド樹脂膜と前記ボンディングパッド樹脂膜の上に形成されるボンディングパッド導電層とを有し、
前記ボンディングパッド樹脂膜と前記樹脂膜とは同層に形成される半導体装置。 - 請求項5において、
前記複数のボンディングパッドは互いに隣接する第1のボンディングパッドと第2のボンディングパッドとを含み、
前記第1のボンディングパッドは前記無機絶縁膜の上に形成される前記第1の配線に接続され、前記第2のボンディングパッドは前記樹脂層の上に形成される前記第2の配線に接続される半導体装置。 - 請求項6において、
前記ボンディングパッド導電層と前記第1の配線及び前記第2の配線は同層に形成される半導体装置。 - 請求項7において、
前記第1のボンディングパッドと前記第2のボンディングパッドとは千鳥状に配置されている半導体装置。 - 請求項2において、
前記第1の配線及び前記第2の配線は銅または銅合金である導電層を有し、
前記樹脂膜はポリイミド系樹脂により形成され、前記樹脂層はエポキシ系樹脂により形成されている半導体装置。 - 請求項7において、
前記ボンディングパッド導電層、前記第1の配線及び前記第2の配線は、銅または銅合金である導電層及び前記導電層の上に形成される少なくともAu、Pd,Niのいずれかを含むバリヤメタルを有し、
前記樹脂膜はポリイミド系樹脂により形成され、前記樹脂層はエポキシ系樹脂により形成されている半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016237387A JP6793025B2 (ja) | 2016-12-07 | 2016-12-07 | 半導体装置 |
PCT/JP2017/038448 WO2018105258A1 (ja) | 2016-12-07 | 2017-10-25 | 半導体装置 |
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---|---|---|---|
JP2016237387A JP6793025B2 (ja) | 2016-12-07 | 2016-12-07 | 半導体装置 |
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JP2018093129A JP2018093129A (ja) | 2018-06-14 |
JP6793025B2 true JP6793025B2 (ja) | 2020-12-02 |
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WO (1) | WO2018105258A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7095615B2 (ja) * | 2019-02-12 | 2022-07-05 | 株式会社デンソー | 半導体装置 |
CN110544679B (zh) * | 2019-08-30 | 2021-05-18 | 颀中科技(苏州)有限公司 | 芯片重布线结构及其制备方法 |
WO2023135959A1 (ja) * | 2022-01-17 | 2023-07-20 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、および、半導体装置の製造方法 |
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JP3848080B2 (ja) * | 2000-12-19 | 2006-11-22 | 富士通株式会社 | 半導体装置の製造方法 |
JP2004140115A (ja) * | 2002-10-16 | 2004-05-13 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2010147282A (ja) * | 2008-12-19 | 2010-07-01 | Renesas Technology Corp | 半導体集積回路装置 |
US10083924B2 (en) * | 2014-11-13 | 2018-09-25 | Renesas Electronics Corporation | Semiconductor device and manufacturing method thereof |
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WO2018105258A1 (ja) | 2018-06-14 |
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