JP6786621B2 - めっき処理方法、めっき処理装置及び記憶媒体 - Google Patents
めっき処理方法、めっき処理装置及び記憶媒体 Download PDFInfo
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- JP6786621B2 JP6786621B2 JP2018547168A JP2018547168A JP6786621B2 JP 6786621 B2 JP6786621 B2 JP 6786621B2 JP 2018547168 A JP2018547168 A JP 2018547168A JP 2018547168 A JP2018547168 A JP 2018547168A JP 6786621 B2 JP6786621 B2 JP 6786621B2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
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Description
図1を参照して、本発明の一実施形態に係るめっき処理装置の構成を説明する。図1は、本発明の一実施形態に係るめっき処理装置の構成を示す概略図である。
図1を参照して、めっき処理ユニット2の構成を説明する。図1は、めっき処理ユニット2の構成を示す概略平面図である。
次に図2を参照して、めっき処理部5の構成を説明する。図2は、めっき処理部5の構成を示す概略断面図である。
次に、本実施形態によるめっき処理方法によってめっき層が形成される基板の構成について説明する。
次に、めっき処理装置1を用いためっき処理方法について説明する。めっき処理装置1によって実施されるめっき処理方法は、上述した基板Wに対するめっき処理を含む。めっき処理は、めっき処理部5により実施される。めっき処理部5の動作は、制御部3によって制御される。
Claims (6)
- 表面にめっき不可材料部分とめっき可能材料部分とが形成された基板を準備する工程と、
前記基板に対して触媒付与処理を行うことにより、前記めっき可能材料部分に対して選択的に触媒を付与する工程と、
前記基板に対してめっき液を供給することにより、前記めっき可能材料部分に対して選択的にめっき層を形成する工程とを備え、
前記めっき液は、前記めっき不可材料部分に前記触媒が付着した場合であっても、この触媒上での酸化・還元反応を抑制することにより、前記めっき不可材料部分にめっき層が析出することを抑制する抑制剤を含有することを特徴とするめっき処理方法。 - 表面にめっき不可材料部分とめっき可能材料部分とが形成された基板を準備する工程と、
前記基板に対して触媒付与処理を行うことにより、前記めっき可能材料部分に対して選択的に触媒を付与する工程と、
前記基板に対してめっき液を供給することにより、前記めっき可能材料部分に対して選択的にめっき層を形成する工程とを備え、
前記めっき液は、前記めっき不可材料部分にめっき層が析出することを抑制する抑制剤を含有し、
前記抑制剤は、ビス(3−スルホプロピル)ジスルフィド又はアミノ基を有するポリマーであることを特徴とするめっき処理方法。 - 前記基板は、前記めっき可能材料部分からなる下地材と、前記下地材上に突設され、前記めっき不可材料部分からなる芯材とを有することを特徴とする請求項1又は2記載のめっき処理方法。
- 表面にめっき不可材料部分とめっき可能材料部分とが形成された基板を保持する基板保持部と、
前記基板に対して触媒付与処理を行うことにより、前記めっき可能材料部分に対して選択的に触媒を付与する触媒付与部と、
前記基板に対してめっき液を供給することにより、前記めっき可能材料部分に対して選択的にめっき層を形成するめっき液供給部とを備え、
前記めっき液は、前記めっき不可材料部分に前記触媒が付着した場合であっても、この触媒上での酸化・還元反応を抑制することにより、前記めっき不可材料部分にめっき層が析出することを抑制する抑制剤を含有することを特徴とするめっき処理装置。 - 表面にめっき不可材料部分とめっき可能材料部分とが形成された基板を保持する基板保持部と、
前記基板に対して触媒付与処理を行うことにより、前記めっき可能材料部分に対して選択的に触媒を付与する触媒付与部と、
前記基板に対してめっき液を供給することにより、前記めっき可能材料部分に対して選択的にめっき層を形成するめっき液供給部とを備え、
前記めっき液は、前記めっき不可材料部分にめっき層が析出することを抑制する抑制剤を含有し、
前記抑制剤は、ビス(3−スルホプロピル)ジスルフィド又はアミノ基を有するポリマーであることを特徴とするめっき処理装置。 - めっき処理装置の動作を制御するためのコンピュータにより実行されたときに、前記コンピュータが前記めっき処理装置を制御して請求項1乃至3のいずれか一項記載のめっき処理方法を実行させるプログラムが記録された記憶媒体。
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