TW201833383A - 鍍敷處理方法、鍍敷處理裝置及記憶媒體 - Google Patents
鍍敷處理方法、鍍敷處理裝置及記憶媒體 Download PDFInfo
- Publication number
- TW201833383A TW201833383A TW106134867A TW106134867A TW201833383A TW 201833383 A TW201833383 A TW 201833383A TW 106134867 A TW106134867 A TW 106134867A TW 106134867 A TW106134867 A TW 106134867A TW 201833383 A TW201833383 A TW 201833383A
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- Prior art keywords
- plating
- substrate
- material portion
- catalyst
- plateable
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 52
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/1635—Composition of the substrate
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/1601—Process or apparatus
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/163—Supporting devices for articles to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1841—Multistep pretreatment with use of metal first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1889—Multistep pretreatment with use of metal first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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Abstract
本發明係一種鍍敷處理方法，鍍敷處理裝置及記憶媒體，其課題為提供：可防止對於不可鍍敷材料部分產生有瑕疵(缺陷)情況之鍍敷處理方法，鍍敷處理裝置及記憶媒體。 {0＞[解決手段]表面にめっき不可材料部分31とめっき可能材料部分32とが形成された基板Wを準備し、基板Wに対して触媒付与処理を行うことにより、めっき可能材料部分32に対して選択的に触媒を付与する。＜}100{＞解決手段為準備加以形成有不可鍍敷材料部分(31)與可鍍敷材料部分(32)於表面之基板(W)，經由對於基板(W)而言進行觸媒賦予處理之時，對於可鍍敷材料部分32而言，選擇性地賦予觸媒。＜0}{0＞次に、基板Wに対してめっき液M1を供給することにより、めっき可能材料部分32に対して選択的にめっき層35を形成する。＜}84{＞接著，經由對於基板(W)而言供給鍍敷液(M1)之時，對於可鍍敷材料部分(32)而言，選擇性地形成鍍敷層(35)。＜0}{0＞めっき液M1は、めっき不可材料部分31にめっき層35が析出することを抑制する抑制剤を含有する。＜}73{＞鍍敷液(M1)係含有抑制鍍敷層(35)析出於不可鍍敷材料部分(31)情況之抑制劑。
Description
[0001] 本發明係有關鍍敷處理方法，鍍敷處理裝置及記憶媒體。
[0002] 近年，伴隨半導體裝置之微細化或3次元化進展之情況，要求有提升在加工半導體裝置時之經由蝕刻之加工精確度者。作為如此為了提升經由蝕刻之加工精確度的方法之一，提升形成於基板上之乾蝕刻用的硬光罩(HM)之精確度的要求則提高。 [先前技術文獻] [專利文獻] [0003] [專利文獻1] 日本特開2009-249679號公報
[發明欲解決之課題] [0004] 但一般而言，對於硬光罩之材料係存在有：具有與基板或抗蝕劑之高密著性者，具有對於熱處理或蝕刻處理而言之高耐性者，除去容易者等種種限制。因此，以往，作為硬光罩的材料係僅使用SiN(氮化矽)或TiN(氮化鈦)等所限制之材料。 [0005] 對此，本發明者們係檢討：於基板上，使SiO(氧化矽)等的膜與SiN(氮化矽)等的膜混入存在，再經由賦予Pd等之觸媒於此基板上之時，選擇性地賦予觸媒於SiN的膜上，使用此觸媒而僅於SiN的膜形成鍍敷層之情況。此情況，因可將形成於SiN的膜之鍍敷層，作為硬光罩而使用之故，作為鍍敷層而可選擇種種之材料者。 [0006] 另一方面，對於基板上之SiO的膜係有存在有微小之晶格缺陷或不純物等之情況。此情況，Pd等之觸媒則附著於晶格缺陷或不純物等，再進行鍍敷處理之後，亦對於本來無須鍍敷層之形成的SiO的膜生成有鍍敷層，而有成為瑕疵(缺陷)之虞。 [0007] 本發明係考慮如此的點而作為之構成，而提供：可防止對於不可鍍敷材料部份產生有瑕疵(缺陷)情況之鍍敷處理方法，鍍敷處理裝置及記憶媒體。 [為了解決課題之手段] [0008] 經由本發明之一實施形態的鍍敷處理方法，其特徵為具備：準備形成有不可鍍敷材料部分與可鍍敷材料部分於表面之基板的工程，和經由對於前述基板而言，進行觸媒賦予處理之時，對於前述可鍍敷材料部分而言，選擇性地賦予觸媒之工程，和經由對於前述基板而言，供給鍍敷液之時，對於前述可鍍敷材料部分而言，選擇性地形成鍍敷層之工程；前述鍍敷液係含有抑制鍍敷層析出於前述不可鍍敷材料部分之抑制劑者。 [0009] 經由本發明之一實施形態的鍍敷處理裝置，其特徵為具備：保持形成有不可鍍敷材料部分與可鍍敷材料部分於表面之基板的基板保持部，和經由對於前述基板而言，進行觸媒賦予處理之時，對於前述可鍍敷材料部分而言，選擇性地賦予觸媒之觸媒賦予部，和經由對於前述基板而言，供給鍍敷液之時，對於前述可鍍敷材料部分而言，選擇性地形成鍍敷層之鍍敷液供給部；前述鍍敷液係含有抑制鍍敷層析出於前述不可鍍敷材料部分之抑制劑者。 發明效果 [0010] 如根據本發明之上述實施形態，可防止對於不可鍍敷材料部分，產生有瑕疵(缺陷)之情況者。
[0012] 以下，參照圖面，對於本發明之一實施形態加以說明。 [0013] ＜鍍敷處理裝置之構成＞ 參照圖1，說明有關本發明之一實施形態的鍍敷處理裝置之構成。圖1係顯示有關本發明之一實施形態之鍍敷處理裝置的構成之概略圖。 [0014] 如圖1所示，有關本發明之一實施形態的鍍敷處理裝置1係具備：鍍敷處理單元2，和控制鍍敷處理單元2之動作的控制部3。 [0015] 鍍敷處理單元2係進行對於基板而言之各種處理。對於鍍敷處理單元2所進行之各種處理係後述之。 [0016] 控制部3係例如為電腦，而具備動作控制部與記憶部。動作控制部係例如由CPU(Central Processing Unit)而加以構成，而經由讀出記憶於記憶部之程式而執行之時，控制鍍敷處理單元2之動作。記憶部係例如由RAM(Random Access Memory)、ROM(Read Only Memory)、硬碟等之記憶裝置而加以構成，而記憶控制在鍍敷處理單元2所執行之各種處理的程式。然而，程式係亦可記錄於經由電腦而可讀取之記憶媒體者，而從其記憶媒體加以建立於記憶部者亦可。作為經由電腦而可讀取之記憶媒體，係例如有著硬碟(HD)、可撓性磁碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。對於記錄媒體係例如，在經由為了控制鍍敷處理裝置1之動作的電腦而加以執行時，電腦則控制鍍敷處理裝置1而加以記錄使後述之鍍敷處理方法執行之程式。 [0017] ＜鍍敷處理單元之構成＞ 參照圖1而說明鍍敷處理單元2之構成。圖1係顯示電鍍處理單元2之構成的概略平面圖。 [0018] 鍍敷處理單元2係具備：搬出入台21，和鄰接於搬出入台21而加以設置之處理台22。 [0019] 搬出入台21係具備：載置部211，和鄰接於載置部211而加以設置之搬送部212。 [0020] 對於載置部211係加以載置以水平狀態而收容複數片之基板W的複數之搬送容器(以下，稱為「載體C」)。 [0021] 搬送部212係具備：搬送機構213與授收部214。搬送機構213係具備：保持基板W之保持機構，呈可對於水平方向及垂直方向的移動，以及將垂直軸作為中心之旋轉地加以構成。 [0022] 處理台22係具備：鍍敷處理部5。在本實施形態中，處理台22所具有之鍍敷處理部5的數係為2以上，但亦可為1。鍍敷處理部5係加以配列於延伸存在於特定方向之搬送路徑221的兩側。 [0023] 對於搬送路徑221係加以設置有搬送機構222。搬送機構222係具備：保持基板W之保持機構，呈可對於水平方向及垂直方向的移動，以及將垂直軸作為中心之旋轉地加以構成。 [0024] 在鍍敷處理單元2中，搬出入台21之搬送機構213係在載體C與授收部214之間進行基板W的搬送。具體而言，搬送機構213係自載置於載置部211之載體C取出基板W，將取出之基板W載置於授收部214。另外，搬送機構213係經由處理台22之搬送機構222而取出載置於授收部214之基板W，再收容於載置部211之載體C。 [0025] 在鍍敷處理單元2中，處理台22之搬送機構222係在授收部214與鍍敷處理部5之間，鍍敷處理部5與授收部214之間，進行基板W之搬送。具體而言，搬送機構222係取出載置於授收部214之基板W，再將取出之基板W搬入至鍍敷處理部5。另外，搬送機構222係自鍍敷處理部5取出基板W，再將取出之基板W載置至授收部214。 [0026] ＜鍍敷處理部之構成＞ 接著，參照圖2而說明鍍敷處理部5之構成。圖2係顯示鍍敷處理部5之構成的概略剖面圖。 [0027] 鍍敷處理部5係經由對於形成有不可鍍敷材料部分31與可鍍敷材料部分32於表面之基板W而言，進行鍍敷處理之時，對於可鍍敷材料部分而言，選擇性地形成鍍敷層35之構成(參照後述之圖3乃至圖7)。鍍敷處理部5所進行之基板處理係至少包含觸媒賦予處理與無電解鍍敷處理，但亦可包含觸媒賦予處理及鍍敷處理以外之基板處理。 [0028] 鍍敷處理部5係進行含有上述之無電解鍍敷處理的基板處理者，而具備：處理室51，和加以配置於處理室51內，保持基板W之基板保持部52，和對於保持於基板保持部52之基板W而言，供給鍍敷液M1之鍍敷液供給部53。 [0029] 其中，基板保持部52係具有在處理室51內，延伸存在於垂直方向的旋轉軸521，和安裝於旋轉軸521之上端部的轉盤522，和加以設置於轉盤522之上面外周部，支持基板W之外緣部的吸著盤523，和旋轉驅動旋轉軸521之驅動部524。 [0030] 基板W係加以支持於吸著盤523，在僅自轉盤522之上面離間的狀態，水平保持於轉盤522。在本實施形態中，經由基板保持部52之基板W的保持方式係有經由可動吸著盤523而把持基板W之外緣部之所謂機械式吸著盤形式之構成，但亦可為真空吸附基板W之背面的所謂真空式吸著盤形式之構成。 [0031] 旋轉軸521之基端部係經由驅動部524而可旋轉地加以支持，而旋轉軸521之前端部係水平地支持轉盤522。當旋轉軸521旋轉時，加以安裝於旋轉軸521之上端部的轉盤522則旋轉，經由此，在加以支持於吸著盤523之狀態，保持於轉盤522之基板W則旋轉。 [0032] 鍍敷液供給部53係具備：對於保持於基板保持部52之基板W而言，吐出鍍敷液M1之噴嘴531，和供給鍍敷液M1至噴嘴531之鍍敷液供給源532。對於鍍敷液供給源532所具有之液槽，係加以儲存有鍍敷液M1，而對於噴嘴531係自鍍敷液供給源532，通過介設有閥533等之流量調整器的供給管路534而加以供給鍍敷液M1。 [0033] 鍍敷液M1係本身觸媒型(還原型)無電解鍍敷用之鍍敷液。鍍敷液M1係含有：鈷(Co)離子，鎳(Ni)離子，鎢(W)離子等之金屬離子，次亞磷酸，二甲胺基硼烷等之還原劑。然而，在本身觸媒型(還原型)無電解鍍敷中，鍍敷液M1之金屬離子則經由根據在鍍敷液M1之還原劑的氧化反應所釋放的電子而加以還原之時，作為金屬而析出，加以形成金屬膜(鍍敷膜)。鍍敷液M1係亦可含有添加劑等。作為經由使用鍍敷液M1之鍍敷處理而產生之金屬膜(鍍敷膜)係例如可舉出：CoB、CoP、CoWP、CoWB、CoWBP、NiWB、NiB、NiWP、NiWBP等。金屬膜(鍍敷膜)中的P係來自含有P之還原劑(例如，次亞磷酸)，而鍍敷膜中的B係來自含有B之還原劑(例如，二甲胺基硼烷)。 [0034] 在本實施形態中，鍍敷液M1係含有抑制鍍敷層35(後述)析出於基板W之不可鍍敷材料部分31情況之抑制劑。抑制劑係具有容易被氧化及還原之性質者，而具體而言，例如，可舉出：雙(3-磺丙基)二硫化物(SPS)或具有胺基之聚合物等者。另外，含於鍍敷液M1中之抑制劑的濃度係作為0.0001重量%以上0.02重量%以下亦可。 [0035] 噴嘴531係加以連結於噴嘴移動機構54。噴嘴移動機構54係驅動噴嘴531。噴嘴移動機構54係具有：柄541，和沿著柄541而可移動之驅動機構內藏型的移動體542，和使柄541旋轉及升降之旋轉升降機構543。噴嘴531係加以安裝於移動體542。噴嘴移動機構54係可使噴嘴531，在保持於基板保持部52之基板W的中心上方位置與基板W之周緣的上方位置之間移動，更且，至在平面視位於後述之杯狀物57之外側的待機位置為止進行移動者。 [0036] 對於處理室51內係加以配置對於保持於基板保持部52之基板W而言，各供給觸媒液N1，洗淨液N2，清洗液N3之觸媒液供給部(觸媒賦予部)55a，洗淨液供給部55b，及清洗液供給部55c。 [0037] 觸媒液供給部(觸媒賦予部)55a係具備：對於保持於基板保持部52之基板W而言，吐出觸媒液N1之噴嘴551a，和供給觸媒液N1至噴嘴551a之觸媒液供給源552a。對於觸媒液供給源552a所具有之液槽，係加以儲存有觸媒液N1，而對於噴嘴551a係自觸媒液供給源552a，通過介設有閥553a等之流量調整器的供給管路554a而加以供給觸媒液N1。 [0038] 洗淨液供給部55b係具備：對於保持於基板保持部52之基板W而言，吐出洗淨液N2之噴嘴551b，和供給洗淨液N2至噴嘴551b之洗淨液供給源552b。對於洗淨液供給源552b所具有之液槽，係加以儲存有洗淨液N2，而對於噴嘴551b係自洗淨液供給源552b，通過介設有閥553b等之流量調整器的供給管路554b而加以供給洗淨液N2。 [0039] 清洗液供給部55c係具備：對於保持於基板保持部52之基板W而言，吐出清洗液N3之噴嘴551c，和供給清洗液N3至噴嘴551c之清洗液供給源552c。對於清洗液供給源552c所具有之液槽，係加以儲存有清洗液N3，而對於噴嘴551c係自清洗液供給源552c，通過介設有閥553c等之流量調整器的供給管路554c而加以供給清洗液N3。 [0040] 觸媒液N1係含有對於鍍敷液M1中之還原劑的氧化反應而言具有觸媒活性的金屬離子。在無電解鍍敷處理中，對於為了開始鍍敷液M1中之金屬離子的析出，係初期皮膜表面(即，基板的被鍍敷面)則必須對於鍍敷液M1中之還原劑的氧化反應而言具有充分的觸媒活性。作為如此之觸媒係例如可舉出：鐵族元素(Fe、Co、Ni)、白金屬元素(Ru、Rh、Pd、Os、Ir、Pt)、Cu、Ag或含有Au之構成。具有觸媒活性的金屬膜之形成係經由置換反應而產生。在置換反應中，構成基板的被鍍敷面的成分則成為還原劑，而觸媒液N1中之金屬離子(例如，Pd離子)則還原析出於基板之被鍍敷面上。另外，觸媒液N1係含有奈米粒子狀之金屬觸媒亦可。具體而言，觸媒液N1係含有奈米粒子狀之金屬觸媒，分散劑，水溶液亦可。作為如此之奈米粒子狀之金屬觸媒係例如可舉出，奈米粒子狀Pd。另外，分散劑係達成容易使奈米粒子狀之金屬觸媒分散於觸媒液N1中之作用。作為如此之分散劑係例如可舉出：聚乙烯吡咯烷酮(PVP)。 [0041] 作為洗淨液N2係例如，可使用蟻酸，蘋果酸，琥珀酸，檸檬酸，丙二酸等之有機酸，加以稀釋於未使基板的被鍍敷面程度之濃度的氫氟酸(DHF)(氟化氫之水溶液)等。 [0042] 作為清洗液N3係例如，可使用純水等。 [0043] 鍍敷處理部5係具有驅動噴嘴551a~551c之噴嘴移動機構56。噴嘴移動機構56係具有：柄561，和沿著柄561而可移動之驅動機構內藏型的移動體562，和使柄561旋轉及升降之旋轉升降機構563。噴嘴551a~551c係加以安裝於移動體562。噴嘴移動機構56係可使噴嘴551a~551c，在保持於基板保持部52之基板W的中心上方位置與基板W之周緣的上方位置之間移動，更且，至在平面視位於後述之杯狀物57之外側的待機位置為止進行移動者。在本實施形態中，噴嘴551a~551c係經由共通的柄而加以保持，但各呈成為可保持於個別的柄而獨立進行動作亦可。 [0044] 對於基板保持部52之周圍係加以配置杯狀物57。杯狀物57係處理自基板W而飛散的各種處理液(例如，鍍敷液，洗淨液，清洗液等)而排出於處理室51之外方。杯狀物57係具有使杯狀物57驅動於上下方向之升降機構58。 [0045] ＜基板之構成＞ 接著，對於根據經由本實施形態之鍍敷處理方法而加以形成鍍敷層之基板的構成而加以說明。 [0046] 如圖3所示，形成有鍍敷層35之基板W係具有各形成於其表面之不可鍍敷材料部分31及可鍍敷材料部分32。不可鍍敷材料部分31及可鍍敷材料部分32係如各露出於基板W之表面側即可，而不問其具體的構成。在本實施形態中，基板W係具有可鍍敷材料部分32所成之基底材42，和加以突設於基底材42上，形成為圖案狀之不可鍍敷材料部分31所成之芯材41。 [0047] 不可鍍敷材料部分31係在加以實施經由本實施形態的鍍敷處理時，實質上未析出有鍍敷金屬，而未形成鍍敷層35之範圍。不可鍍敷材料部分31係例如，由將SiO2
作為主成分之材料所成。然而，如後述，對於不可鍍敷材料部分31係存在有微小之晶格缺陷或不純物等。 [0048] 可鍍敷材料部分32係在加以實施經由本實施形態的鍍敷處理時，選擇性析出有鍍敷金屬，經由此而形成鍍敷層35之範圍。在本實施形態中，可鍍敷材料部分32係例如，亦可自(1)含有OCHx基及NHx基之中之至少一方的材料，(2)將Si系材料作為主成分之金屬材料，(3)將觸媒金屬材料作為主成分之材料，或(4)將碳作為主成分之材料之任意所成。 [0049] (1)將可鍍敷材料部分32之材料含有OCHx基及NHx基之中之至少一方的材料作為主成分之情況，作為其材料係可舉出：含有Si-OCHx基或Si-NHx基之材料，例如SiOCH或SiN。 [0050] (2)可鍍敷材料部分32為將Si系材料作為主成分之金屬材料之情況，作為可鍍敷材料部分32之材料係可舉出：摻雜有B或P之Poly-Si、Poly-Si、Si。 [0051] (3)可鍍敷材料部分32為將觸媒金屬材料作為主成分之材料作為主成分之情況，作為可鍍敷材料部分32之材料係可舉出：例如Cu、Pt。 [0052] (4)可鍍敷材料部分32為將碳作為主成分之材料作為主成分之情況，作為可鍍敷材料部分32之材料係可舉出：例如非晶質碳。 [0053] 接著，使用圖4(a)-(e)，對於製作圖3所示之基板W之方法加以說明。製作圖3所示之基板W之情況，首先，如圖4(a)所示，準備可鍍敷材料部分32所成之基底材42。 [0054] 接著，如圖4(b)所示，於可鍍敷材料部分32所成之基底材42上之全面，例如經由CVD法或PVD法而將構成不可鍍敷材料部分31之材料31a進行成膜。材料31a係例如，由將SiO2
作為主成分之材料所成。 [0055] 接著，如圖4(c)所示，於構成不可鍍敷材料部分31之材料31a的表面全體，塗佈感光性光阻劑33a，再將此進行乾燥。接著，如圖4(d)所示，經由對於感光性光阻劑33a而言，藉由光罩而進行曝光，顯像之時，加以形成具有所期望圖案之光阻膜33。 [0056] 之後，如圖4(e)所示，將光阻膜33作為光罩而乾蝕刻材料31a。經由此，不可鍍敷材料部分31所成之芯材41則加以圖案化為與光阻膜33之圖案形狀略同樣的形狀。之後，經由除去光阻膜33之時，可得到形成有不可鍍敷材料部分31與可鍍敷材料部分32於表面之基板W。 [0057] ＜鍍敷處理方法＞ 接著，對於使用鍍敷處理裝置1之鍍敷處理方法而加以說明。經由鍍敷處理裝置1所實施之鍍敷處理方法係包含對於上述基板W而言之鍍敷處理。鍍敷處理係經由鍍敷處理部5而加以實施。鍍敷處理部5之動作係經由控制部3而加以控制。 [0058] 首先，例如，經由上述圖4(a)-(e)所示之方法，準備形成有不可鍍敷材料部分31與可鍍敷材料部分32於表面之基板W(準備工程：圖5之步驟S1)(參照圖6(a))。 [0059] 接著，如此作為所得到之基板W則加以搬入至鍍敷處理部5，加以保持於基板保持部52(參照圖2)。期間，控制部3係控制升降機構58，而使杯狀物57下降至特定位置。接著，控制部3係控制搬送機構222，載置基板W於基板保持部52。基板W係在經由吸著盤523而加以支持其外緣部之狀態，加以水平保持於轉盤522上。 [0060] 接著，加以洗淨處理保持於基板保持部52之基板W(前洗淨工程：圖5之步驟S2)。此時，控制部3係控制驅動部524，以特定速度而使保持於基板保持部52之基板W旋轉同時，控制洗淨液供給部55b，使噴嘴551b定位於基板W之上方，自噴嘴551b對於基板W而言，供給洗淨液N2。供給至基板W之洗淨液N2係經由伴隨基板W之旋轉的離心力而擴散於基板W的表面。經由此，附著於基板W之附著物等則自基板W加以除去。自基板W飛散之洗淨液N2係藉由杯狀物57而加以排出。 [0061] 接著，洗淨後之基板W則加以清洗處理(清洗工程：圖5之步驟S3)。此時，控制部3係控制驅動部524，以特定速度而使保持於基板保持部52之基板W旋轉同時，控制清洗液供給部55c，使噴嘴551c定位於基板W之上方，自噴嘴551c對於基板W而言，供給清洗液N3。供給至基板W之清洗液N3係經由伴隨基板W之旋轉的離心力而擴散於基板W的表面。經由此，殘存於基板W上之洗淨液N2則被加以沖洗。自基板W飛散之清洗液N3係藉由杯狀物57而加以排出。 [0062] 接著，對於基板W而言，進行觸媒賦予處理(觸媒賦予工程：圖5之步驟S4)。此時，控制部3係控制驅動部524，以特定速度而使保持於基板保持部52之基板W旋轉同時，控制觸媒液供給部55a，使噴嘴551a定位於基板W之上方，自噴嘴551a對於基板W而言，供給觸媒液N1。供給至基板W之觸媒液N1係經由伴隨基板W之旋轉的離心力而擴散於基板W的表面。自基板W飛散之觸媒液N1係藉由杯狀物57而加以排出。 [0063] 經由此，對於基板W之可鍍敷材料部分32而言，選擇性地加以賦予觸媒，而於可鍍敷材料部分32，加以形成具有觸媒活性之金屬膜。另一方面，基板W之中，對於將SiO2
作為主成分之不可鍍敷材料部分31係除了存在有後述之晶格缺陷或不純物等之處，實質上未賦予觸媒，而未加以形成有具有觸媒活性之金屬膜。作為具有如此之觸媒活性的金屬係例如可舉出：鐵族元素(Fe、Co、Ni)、白金屬元素(Ru、Rh、Pd、Os、Ir、Pt)、Cu、Ag或Au。上述各金屬係對於構成可鍍敷材料部分32之材料(例如，SiN)而言具有高吸著性之另一方面，對於構成不可鍍敷材料部分31之材料(例如，SiO2
)而言係不易吸附。因此，經由使用上述各金屬之時，成為對於可鍍敷材料部分32而言，可選擇性地使鍍敷金屬析出者。具體而言，觸媒液N1係含有奈米粒子狀之Pd觸媒，和聚乙烯吡咯烷酮(PVP)所成之分散劑，和水溶液亦可。然而，觸媒液N1係含有促進具有上述觸媒活性之金屬的吸著之吸著促進劑亦可。 [0064] 接著，對於基板W而言進行鍍敷處理，對於可鍍敷材料部分32而言，選擇性地加以實施鍍敷(鍍敷工程：圖5之步驟S5)。經由此，於可鍍敷材料部分32上，加以形成鍍敷層35(參照圖6(b))。鍍敷層35係加以形成於可鍍敷材料部分32之中，經由不可鍍敷材料部分31所未被覆之部分。此時，控制部3係控制驅動部524，以特定速度使保持於基板保持部52之基板W旋轉同時，或者，將保持於基板保持部52之基板W維持為停止之狀態同時，控制鍍敷液供給部53，使噴嘴531定位於基板W之上方，自噴嘴531，對於基板W而言供給鍍敷液M1。經由此，於基板W可鍍敷材料部分32(具體而言係具有形成於可鍍敷材料部分32表面之觸媒活性的金屬膜)，選擇性地析出有鍍敷金屬，而加以形成鍍敷層35。另一方面，對於基板W之不可鍍敷材料部分31係未加以形成有具有觸媒活性之金屬膜之故，實質上未析出有鍍敷金屬，而未形成有鍍敷層35。 [0065] 在本實施形態中，鍍敷液M1係含有雙(3-磺丙基)二硫化物(SPS)或具有胺基之聚合物等之抑制劑。經由此，假設為於不可鍍敷材料部分31之一部分，存在有例如晶格缺陷或不純物等，而觸媒附著於此晶格缺陷或不純物等之情況，亦在觸媒上加以抑制氧化･還原反應，而可抑制析出･吸著有構成鍍敷層35之金屬粒子情況。即，經由抑制劑之作用，加以防止金屬粒子吸著於不可鍍敷材料部分31上之觸媒情況。此結果，在鍍敷工程中，可作為呈鍍敷層35未析出於不可鍍敷材料部分31者。另一方面，在可鍍敷材料部分32中，經由鍍敷液M1中之抑制劑而構成鍍敷層35之金屬粒子係與未存在有抑制劑之情況做比較，以小的粒徑而進行成長。經由此，成為可緻密地形成在可鍍敷材料部分32成長之鍍敷層35者。 [0066] 如此作為而鍍敷處理結束之後，加以洗淨處理保持於基板保持部52之基板W(後洗淨工程：圖5之步驟S6)。此時，控制部3係控制驅動部524，以特定速度而使保持於基板保持部52之基板W旋轉同時，控制洗淨液供給部55b，使噴嘴551b定位於基板W之上方，自噴嘴551b對於基板W而言，供給洗淨液N2。供給至基板W之洗淨液N2係經由伴隨基板W之旋轉的離心力而擴散於基板W的表面。經由此，附著於基板W之異常鍍敷膜或反應副生成物等則自基板W加以除去。自基板W飛散之洗淨液N2係藉由杯狀物57而加以排出。 [0067] 接著，控制部3係控制驅動部524，以特定速度而使保持於基板保持部52之基板W旋轉同時，控制清洗液供給部55c，使噴嘴551c定位於基板W之上方，自噴嘴551c對於基板W而言，供給清洗液N3(清洗工程：圖5之步驟S7)。經由此，基板W上之鍍敷液M1，洗淨液N2及清洗液N3係經由伴隨於基板W之旋轉的離心力而自基板W飛散，藉由杯狀物57而加以排出。 [0068] 之後，形成有鍍敷層35之基板W係自鍍敷處理部5加以搬出、此時，控制部3係控制搬送機構222，自鍍敷處理部5取出基板W，將取出之基板W載置於授收部214之同時，控制搬送機構213，再取出載置於授收部214之基板W，再收容至載置部211之載體C。 [0069] 接著，將鍍敷層35作為硬光罩層而使用，蝕刻基板W。 [0070] 此情況，自鍍敷處理部5加以取出之基板W之中，選擇性除去不可鍍敷材料部分31(圖7(a))。另一方面，形成於可鍍敷材料部分32上之鍍敷層35係未被除去而殘存。 [0071] 接著，如圖7(b)所示，將鍍敷層35作為硬光罩而乾蝕刻由可鍍敷材料部分32所成之基底材42。經由此，基底材42之中，未由鍍敷層35所被覆之部分則加以蝕刻至特定的深度為止，加以形成圖案狀之凹部。 [0072] 之後，如圖7(c)所示，經由根據濕洗淨法而加以除去鍍敷層35之時，得到形成有圖案狀之凹部的基底材42。然而，鍍敷層35係因可經由濕洗淨法而除去之故，可容易地除去鍍敷層35者。作為以如此之濕洗淨法所使用之藥液係加以使用酸性溶媒者。 [0073] 如以上所說明，如根據本實施形態，對於在鍍敷處理工程所使用之鍍敷液M1係包含有抑制鍍敷層35析出於不可鍍敷材料部分31情況之抑制劑。經由此情況，假設即使觸媒附著於不可鍍敷材料部分31之情況，亦在此觸媒上加以抑制氧化･還原反應，而可抑制構成鍍敷層35之金屬粒子產生析出･吸著者。經由此，即使為於不可鍍敷材料部分31之一部分，例如存在有晶格缺陷或不純物等之情況，亦可自該晶格缺陷或附著於不純物等之觸媒而防止鍍敷層35成長者。此結果，在進行鍍敷處理之後，於本來未應形成鍍敷層之不可鍍敷材料部分31的一部分，未有形成鍍敷層者，而可防止於不可鍍敷材料部分31，生成有瑕疵(缺陷)之不良情況者。 [0074] 另外，如根據本實施形態，經由於鍍敷液M1含有抑制劑之時，在可鍍敷材料部分32中，可以細微之狀態使構成鍍敷層35之金屬粒子成長者。經由此，可緻密地形成加以形成於可鍍敷材料部分32之鍍敷層35者。 [0075] 如此可防止經由鍍敷液M1中之抑制劑而形成鍍敷層35於吸著於不可鍍敷材料部分31之不純物等的觸媒情況，係認為如以下的理由。即，如圖8所示，在賦予觸媒A於基板W之後(圖5之步驟S4之後)，對於可鍍敷材料部分32係附著有多數的觸媒A。在此，想定於不可鍍敷材料部分31之一部分，存在有微小之不純物D(或晶格缺陷)，吸著觸媒A於此不純物D之情況。此情況，在之後的鍍敷工程(圖5之步驟S5)中，鍍敷液M1中之還原劑則在觸媒A上被氧化而加以釋放電子，但抑制劑R則經由被釋放之電子而加以還原，而鍍敷液M1中之金屬離子則未被還原。此結果，加以抑制鍍敷液M1中之金屬離子M則吸著於不可鍍敷材料部分31上之觸媒A情況。另一方面，附著於可鍍敷材料部分32之一部分的觸媒A之電子亦被吸引至抑制劑R。因此，加以抑制金屬粒子M吸著於可鍍敷材料部分32上之觸媒A，而未有在可鍍敷材料部分32上，金屬粒子M則保持大的粒子而成長者，而可緻密地使鍍敷層35成長。對此，作為比較例，未含有抑制劑R於鍍敷液M1之情況，在鍍敷處理後，金屬粒子M則吸著於附著於不純物D之觸媒A，而對於此部分產生有未意圖之鍍敷層，而有成為瑕疵之虞。 [0076] 然而，本發明係並不直接限定於上述實施形態者，而在實施階段中，在未脫離其內容之範圍，可將構成要素進行變形而做具體化。另外，經由揭示於上述實施形態之複數的構成要素之適宜組合，可形成種種之發明。亦可自實施形態所示之全構成要素，刪除幾個之構成要素。更且，亦可適宜組合關於不同實施形態之構成要素。
[0077]
1‧‧‧鍍敷處理裝置
2‧‧‧鍍敷處理單元
3‧‧‧控制部
5‧‧‧鍍敷處理部
31‧‧‧不可鍍敷材料部分
32‧‧‧可鍍敷材料部分
33‧‧‧光阻膜
35‧‧‧鍍敷層
41‧‧‧芯材
42‧‧‧基底材
43‧‧‧中間層
51‧‧‧處理室
52‧‧‧基板保持部
53‧‧‧鍍敷液供給部
54‧‧‧噴嘴移動機構
55a‧‧‧觸媒液供給部
55b‧‧‧洗淨液供給部
55c‧‧‧清洗液供給部
56‧‧‧噴嘴移動機構
57‧‧‧杯狀物
58‧‧‧升降機構
[0011] 圖1係顯示鍍敷處理裝置及鍍敷處理裝置所具備之鍍敷處理單元的構成之概略平面圖。 圖2係顯示圖1所示之鍍敷處理單元所具備之鍍敷處理部的構成之概略剖面圖。 圖3係顯示根據經由本實施形態之鍍敷處理方法而加以形成鍍敷層之基板的構成之概略剖面圖。 圖4(a)-(e)係顯示根據經由本實施形態之鍍敷處理方法而加以形成鍍敷層之基板的製造方法之概略剖面圖。 圖5係顯示經由本實施形態之鍍敷處理方法的流程圖。 圖6(a)-(b)係顯示經由本實施形態之鍍敷處理方法的概略剖面圖。 圖7(a)-(c)係顯示加工根據經由本實施形態之鍍敷處理方法而加以形成鍍敷層之基板的方法之概略剖面圖。 圖8係顯示觸媒附著於基板之表面時的作用之概略圖。
Claims (6)
- 一種鍍敷處理方法，其特徵為具備：準備加以形成有不可鍍敷材料部分與可鍍敷材料部分於表面之基板的工程， 和經由對於前述基板而言進行觸媒賦予處理之時，對於前述可鍍敷材料部分而言，選擇性地賦予觸媒之工程， 和經由對於前述基板而言，供給鍍敷液之時，對於前述可鍍敷材料部分而言，選擇性地形成鍍敷層之工程； 前述鍍敷液係含有抑制鍍敷層析出於前述不可鍍敷材料部分情況之抑制劑者。
- 如申請專利範圍第1項記載之鍍敷處理方法，其中，前述抑制劑係雙(3-磺丙基)二硫化物或具有胺基之聚合物者。
- 如申請專利範圍第1項或第2項記載之鍍敷處理方法，其中，前述基板係具有：由前述可鍍敷材料部分所成之基底材，和加以突設於前述基底材上，由前述不可鍍敷材料部分所成之芯材者。
- 一種鍍敷處理裝置，其特徵為具備：保持形成有不可鍍敷材料部分與可鍍敷材料部分於表面之基板的基板保持部， 和經由對於前述基板而言，進行觸媒賦予處理之時，對於前述可鍍敷材料部分而言，選擇性地賦予觸媒之觸媒賦予部， 和經由對於前述基板而言，供給鍍敷液之時，對於前述可鍍敷材料部分而言，選擇性地形成鍍敷層之鍍敷液供給部； 前述鍍敷液係含有抑制鍍敷層析出於前述不可鍍敷材料部分情況之抑制劑者。
- 如申請專利範圍第4項記載之鍍敷處理裝置，其中，前述抑制劑係雙(3-磺丙基)二硫化物或具有胺基之聚合物者。
- 一種記憶媒體，其特徵為在經由為了控制鍍敷處理裝置的動作之電腦而加以執行時，前述電腦則控制前述鍍敷處理裝置而加以記錄執行如申請專利範圍第1項至第3項任一項記載之鍍敷處理方法之程式。
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